Structural characterization of the V2O5/TiO2 system obtained by the sol–gel method

The influence of the vanadium load and calcination temperature on the structural characteristics of the V₂O₅/TiO₂ system was studied by X-ray diffraction and X-ray absorption spectroscopy (XAS) techniques. Samples of the V₂O₅/TiO₂ system were prepared by the sol–gel method under acid conditions and calcined at different temperatures. The rutile phase was found to predominate in pure TiO₂ calcined at 450 °C as a result of the reduction of phase transition temperature promoted by the sol–gel method under acid conditions. The anatase phase became predominant at 450 °C as the amount of vanadium increased from 6 to 9 wt%. A structural change in the TiO₂ phase from predominantly anatase to totally rutile with increased calcination temperature was observed in 6 wt% samples. An analysis of the vanadium X-ray Absorption Near Edge Structure (XANES) spectra showed that the oxidation state of vanadium atoms in the samples containing 6 and 9 wt% of vanadium and calcined at 450 °C was predominantly V⁴⁺. However, the presence of V⁵⁺ atoms cannot be ruled out. A qualitative analysis of extended X-ray absorption fine structure (EXAFS) spectra of the samples containing 6 and 9 wt% of vanadium calcined at 450 °C showed that the local structure around vanadium atoms is comparable to that of VO₂ crystalline phase, in which vanadium atoms are fourfold coordinated in a distorted structure. For the sample after calcination at 600 °C, the EXAFS and XANES results showed that a significant portion of vanadium atoms were incorporated in the rutile lattice with a V_xTi_(1−x)O₂ solid solution formation. The conditions of sample preparation used here to prepare V₂O₅/TiO₂ samples associated with different amounts of vanadium and calcination temperatures proved to be useful to modifying the structure of the V₂O₅/TiO₂ system.     

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (1 1 1) diodes

The effect of rapid thermal annealing on the electrical and structural properties of Ni/Au Schottky contacts on n-InP have been investigated by current–voltage (I–V), capacitance–voltage (C–V), auger electron spectroscopy (AES) and X-ray diffraction (XRD) techniques. The Au/Ni/n-InP Schottky contacts are rapid thermally annealed in the temperature range of 200–500 °C for a duration of 1 min. The Schottky barrier height of as-deposited Ni/Au Schottky contact has been found to be 0.50 eV (I–V) and 0.86 eV (C–V), respectively. It has been found that the Schottky barrier height decreased with increasing annealing temperature as compared to as-deposited sample. The barrier height values obtained are 0.43 eV (I–V), 0.72 eV (C–V) for the samples annealed at 200 °C, 0.45 eV (I–V) and 0.73 eV (C–V) for those at 400 °C. Further increase in annealing temperature to 500 °C the barrier height slightly increased to 0.46 eV (I–V) and 0.78 eV (C–V) compared to the values obtained for the samples annealed at 200 °C and 400 °C. AES and XRD studies showed the formation of indium phases at the Ni/Au and InP interface and may be the reason for the increase in barrier height. The AFM results showed that there is no significant degradation in the surface morphology (rms roughness of 1.56 nm) of the contact even after annealing at 500 °C.     

Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

A thin poly(ethylmethacrylate) (PEMA) layer is deposited on n-InP as an interlayer for electronic modification of Au/n-InP Schottky structure. The electrical properties of Au/PEMA/n-InP Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at different annealing temperatures. Experimental results show that Au/PEMA/n-InP structure exhibit a good rectifying behavior. An effective barrier height as high as 0.83 eV (I–V) and 1.09 eV (C–V) is achieved for the Au/PEMA/n-InP Schottky structure after annealing at 150 °C compared to the as-deposited and annealed at 100 and 200 °C. Modified Norde's functions and Cheung method are also employed to calculate the barrier height, series resistance and ideality factors. Results show that the barrier height increases upon annealing at 150 °C and then slightly decreases after annealing at 200 °C. The PEMA layer increases the effective barrier height of the structure as this layer creates a physical barrier between the Au metal and the n-InP. Terman's method is used to determine the interface state density and it is found to be 5.141 × 10¹² and 4.660 × 10¹² cm^?2 eV^?1 for the as-deposited and 200 °C annealed Au/PEMA/n-InP Schottky diodes. Finally, it is observed that the Schottky diode parameters change with increasing annealing temperature.     

Spray pyrolised Al/ZnO: Al heterojunction: Effect of Al on junction properties

Al/ZnO: Al heterojunction was fabricated by depositing ZnO: Al film on Al substrate by spray pyrolysis technique at 220 °C substrate temperature. XRD, SEM and EDAX techniques were used to study the properties of thin films. Heterojunction properties were studied by I–V and C–V measurements. The fabricated Al/ZnO: Al junctions were rectifying in character. The room temperature ideality factors of Al/ZnO: Al junctions are found to vary from 2.56 to 5.45. The reverse saturation currents are 5.21 × 10⁻⁹, 1.35 × 10⁻⁶, 1.99 × 10⁻⁶, 9.99 × 10⁻⁷ and 1.02 × 10⁻⁷ A for Al/ZnO: Al junctions. Junction forward current depends on doping concentrations and temperature, whereas reverse saturation current remains independent for Al concentration. The built-in-potential calculated from capacitance for Al/ZnO: Al junctions are 2.74, 2.60, 2.0, 2.50 and 2.43 V corresponding to 1, 2, 3, 4 and 5 mol% of Al. X-ray diffraction study confirmed that the films are polycrystalline, orientated in (0 0 2) plane. Scanning electron microscopy study confirmed circular ring patterns with inside ribbon type structure for Al doped ZnO films.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Magnetism in nanocrystalline SiC films

Magnetism been studied in two series of nanocrystalline SiC films obtained by the method of direct deposition of ions with an energy of ~100 eV at temperatures 1150 °С and 1200 °С. There were separated the contributions of diamagnetism, paramagnetism and superparamagnetism+ferromagnetism. Magnetization value of the films correlates with the deposition temperature. In the films deposited at higher temperatures the value of magnetization was by 1.5 times lower. It was concluded that induced magnetism in nanocrystalline SiC films is caused by interaction of magnetic moments of neutral V_SiV_C divacancies in separate nanocrystals. The estimated concentration of neutral V_SiV_C divacancies in nanocrystalline SiC films is ~10²⁰ сm⁻³.     

Structural and electrochemical studies on thin film LiNi0.8Co0.2O2 by PLD for micro battery

Thin film of LiNi_0.8Co_0.2O₂ (LNCO) has been prepared by Pulsed Laser Deposition (PLD) technique at various post annealing temperatures. XRD results of LNCO thin film deposited on both Pt and Si substrates reveal relatively good crystalline nature at 500 °C which is in good agreement with the electrochemical results. ICP-AES composition analysis indicates 10 to 5% Li loss in the post annealed (400–700 °C) LNCO/Pt thin films; however the as prepared LNCO/Pt films show 17% excess of Li which are comparable with the LNCO target results. SEM analysis indicates phase separation at 600 °C and porous nature at 700–800 °C for LNCO/Pt films. Cyclic voltammetry (CV) scans of LiNi_0.8Co_0.2O₂ film post annealed at 500 °C show a pair of main cathodic and anodic peaks at 3.64 and 3.4 V, respectively with a narrow peak separation reveals good stability upon cycling. Whereas the LNCO films annealed at 600 °C and 700 °C indicate an additional anodic peak at lower potential besides a pair of major peaks which may be due to the phase separated morphology as evidenced from SEM analysis. Based on the structural and electrochemical results, a lithium-ion micro cell has been constructed with LNCO/Li_3.4V_0.6Si_0.4O₄(LVSO)/SnO configuration with the thickness of 1.535 µm and its electrochemical properties have been studied.     

Structural and electrical properties of fluorine-doped zinc tin oxide thin films prepared by radio-frequency magnetron sputtering

Transparent and conductive thin films of fluorine doped zinc tin oxide (FZTO) were deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO₂ ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF₄, and O₂ forming gas into the sputtering chamber while sputtering ZTO target. The effect of annealing temperature on the structural, electrical and optical performances of FZTO thin films has been studied. FZTO thin film annealed at 600 °C shows the decrease in resistivity 5.47 × 10⁻³ Ω cm, carrier concentration ∼10¹⁹ cm⁻³, mobility ∼20 cm² V⁻¹ s⁻¹ and an increase in optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures which is well explained by Burstein–Moss effect. The optical transmittance of FZTO films was higher than 80% in all specimens. Work function (ϕ) of the FZTO films increase from 3.80 eV to 4.10 eV through annealing and are largely dependent on the amounts of incorporated F. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.     

Prototype electrochromic device and dye sensitized solar cell using spray deposited undoped and ‘Li’ doped V2O5 thin film electrodes

Lithium (Li) (0–5 wt%) doped V₂O₅ thin films were spray deposited at 450 °C onto ITO substrates. Structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films. In addition to the V₂O₅ phase, presence of VO₂ peaks due to high deposition temperature is also evident from structural and optical characterization. The non-stoichiometric nature of the films due to loss of the terminal O atom was confirmed from Raman spectroscopy. The direct band gap, indirect bandgap, and phonon energies were also calculated from optical studies. Different charge states of vanadium ions present in the film were identified from X-ray photoelectron spectroscopy study. Results from cyclic voltammetry experiments reflected significant differences between the undoped and Li doped V₂O₅ samples. Transport properties by Hall-effect measured at room temperature indicated significant increase in conductivity, carrier concentration and mobility of V₂O₅ thin films on doping with Li. A Dye Sensitized Solar Cell (DSSC) was fabricated using mobility enhanced 5 wt% Li doped V₂O₅ film as photoanode and its efficiency was found to be 2.7%. A simple electrochromic cell is fabricated using undoped V₂O₅ thin film to demonstrate the colour change.     

The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization

HfLaO_x based Metal–oxide–semiconductor capacitors were fabricated by atomic layer deposition in this work. The material and electrical properties of the films along with the high temperature thermal treatment were investigated. It was found that samples undergoing annealing at 900 °C exhibited the best performance. The film was found to be crystallized to a cubic structure at 900 °C, and the roughness of the films was estimated to be 0.332 nm. For electrical characterization, the C–V curve of the film is in good agreement with the corresponding simulated curve, and the capacitor does not show any hysteresis. Moreover, the D_it near the center of silicon band gap exhibits lowest value, and it was calculated to be 2.28 × 10¹¹ eV^?1 cm^?2.     

Thermally evaporated CdS/CdTe thin film solar cells: Optimization of CdCl2 evaporation treatment on absorber layer

CdCl₂ treatment is crucial in the fabrication of highly efficient CdS/CdTe thin-film solar cells. This study reports a comprehensive analysis of thermal evaporated CdS/CdTe thin-film solar cells when the CdTe absorber layer is CdCl₂ annealed at temperatures from 340 to 440 °C. Samples were characterized for structural, optical, morphological and electrical properties. The films annealed at 400 °C showed better crystallinity with a cubic zinc blende structure having large grains. Higher refractive index, optical conductivity, and absorption coefficient were recorded for the CdTe films annealed at 400 °C with CdCl₂. Optimum photoactive properties for CdS/CdTe thin-film solar cells were also obtained when samples were annealed at 400 °C for 20 min with CdCl₂, and the best device exhibited V_OC of 668.4 mV, J_SC of 13.6 mA cm⁻², FF of 53.9% and an efficiency of 4.9%.     

Temperature dependence and the effect of hydrogen peroxide on ITO/poly-ZnO Schottky diodes fabricated by laser evaporation

Transparent and efficient poly-ZnO ultraviolet Schottky diodes grown at different temperatures with indium-tin-oxide (ITO) as the metallic contact layer were fabricated with hydrogen peroxide (H₂O₂) applied as a surface treatment at 70 °C for 20 min. Analysis via field-emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the ZnO films underwent gradual oxidation and that H₂O₂ treatment resulted in an interfacial ZnO₂ layer that covered the ZnO surface. I–V measurements indicated that the ideality factor and the Schottky barrier height improved with increasing shunt resistance, and the trade-off between film quality and the degree of oxidation revealed that films grown at 400 °C exhibited the best diode characteristics.     

Polymorphic phase transition and thermal stability in squaric acid (H2C4O4)

Phase transformations in squaric acid (H₂C₄O₄) have been investigated by thermogravimetry and differential scanning calorimetry with different heating rates β. The mass loss in TG apparently begins at onset temperatures T_di=245±5 °C (β=5 °C min^?1), 262±5 °C (β=10 °C min^?1), and 275±5 °C (β=20 °C min^?1). A polymorphic phase transition was recognized as a weak endothermic peak in DSC around 101 °C (T_c⁺). Further heating with β=10 °C min^?1 in DSC revealed deviation of the baseline around 310 °C (T_i), and a large unusual exothermic peak around 355 °C (T_p), which are interpreted as an onset and a peak temperature of thermal decomposition, respectively. The activation energy of the thermal decomposition was obtained by employing relevant models. Thermal decomposition was recognized as a carbonization process, resulting in amorphous carbon.     

Release of a diamond-like film on a nickel surface irradiated simultaneously with carbon ions and electrons

Nickel samples at temperatures of 300–1000°C have been irradiated simultaneously with 10-to 30-keV C⁺ ions and 1-to 5-keV electrons. The release of implanted carbon atoms on the surface of a sample with the formation of a transparent carbon film with the prevailing sp ³ hybridization has been observed. The thickness of the film is several tens of nanometers. The formation of films is attributed to the acceleration of the formation of carbon structures in samples irradiated by accelerated electrons.     

Electrochromic performance of the mixed V2O5–WO3 thin films synthesized by pulsed spray pyrolysis technique

Vanadium pentoxide (V₂O₅) mixed tungsten trioxide (WO₃) thin films have been synthesized by a novel pulsed spray pyrolysis technique (PSPT) on glass and fluorine doped tin oxide (FTO) coated glass substrates at 400 °C. Aqueous solutions of equimolar vanadium chloride and ammonium tungstate were mixed in volume proportions (5%, 10% and 15%) for the deposition of V₂O₅–WO₃ thin films. The structural, morphological, optical and electrochemical properties of V₂O₅–WO₃ thin films were investigated by FT-IR, XRD, SEM, cyclic voltammetry, chronoamperometry and chronocoulometry techniques. The results showed that the electrochemical properties of V₂O₅ were altered by mixing WO₃. All the films exhibited cathodic electrochromism in lithium containing electrolyte (0.5 M LiClO₄ + propylene carbonate (PC)). Maximum coloration efficiency (CE) of about 49 cm² C⁻¹ was observed for the V₂O₅ film mixed with 15% WO₃. The electrochemical stability of the sample was examined and it was found to be stable up to 1000 cycles.     

Influence of vacuum annealing on structures and mechanical properties of Al–Ti–N films deposited by multi-arc ion plating

The Al–Ti–N films deposited by multi-arc ion plating have been annealed in vacuum within the range of 700–1100 °C. X-ray diffraction results showed that the structure of the films underwent the formation of coherent c-TiN and c-AlN for the annealing temperatures were up to 900 °C. A new phase AlTi_x (x = 0.50, 0.56, 3) was observed after annealing. The X-ray photoelectron spectroscopy results showed the intensity of Ti–Al bonds decreased as annealing temperatures increased, indicating the decomposition of (Al, Ti)N into c-TiN and c-AlN were at the expense of Ti–Al bonds. Differential scanning calorimetry experiments were used to investigate the dynamic behavior of the films during annealing process and the results showed that the N₂ formed as a consequence of the phase transformation process. The release of the N₂ resulted in the peeling of the films from the substrates. The film exhibited a maximum hardness of 39 GPa after 900 °C annealing due to the formation of coherent c-TiN and c-AlN phases. In addition, we also investigated the influence of vacuum annealing on adhesive strength.     

Ordering of SiO<Subscript>x</Subscript>H<Subscript>y</Subscript>C<Subscript>z</Subscript> islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation

SiO _x H _y C _z nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiO _x H _y C _z nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.     

Temperature dependent electrophysical characteristics of GaAs-polymer composite varistors

A composition of GaAs-polymer tiny particles was pressed at a temperature of 130 °C and a pressure of 60 MPa and its current–voltage characteristic was studied. The result shows that the prepared disk has varistor behavior and can therefore be used to protect circuits from low overvoltage transients higher than 62 V. Temperature dependence of current-voltage characteristic and the electrical conductivity of the sample were investigated in the temperature range of 25–100 °C. It has been found that increase in temperature results in lower breakdown voltage and nonlinearity coefficient. At high temperatures, nonlinearity in the I–V characteristic of sample disappears and the conductivity becomes Ohmic in nature. The sample has hysteresis which decreases through increase in temperature. Annealing effect on leakage current and breakdown voltage was both investigated and analyzed using SEM micrographs. Finally, the electrical bandgap of the sample was measured.     

The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes

p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ type thin films were synthesized by thermal evaporation method on Mo coated glass substrates. To obtain Al/CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂/Mo Schottky diode structure for two compositions of x = 0.0 and 0.6, Al metal was evaporated on upper surface of CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ as a front contact. Al/p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂/Mo structures were annealed temperature range from 150 °C to 300 °C for 10 min under vacuum. The electrical and dielectrical properties of Al/p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ (CIGSeTe) Schottky barrier diodes (SBD) have been investigated. Capacitance–Voltage (C–V) characteristics, Conductance–Voltage (G/w–V) characteristics and interface state density were studied in order to obtain electrical and dielectrical parameters. The effects of interface state density (N_ss), series resistance (R_s), the dielectric constant (?′), dielectric loss (?″), dielectric loss tangent (tan δ), ac electrical conductivity (σ_ac) and carrier doping densities were calculated from the C–V and G/w–V measurements and plotted as a function of annealing temperature. It was observed that the values of carrier doping density N_A for annealing temperature at 150 °C decreased from 2.83 × 10⁺¹⁵ cm^?3 to 2.87 × 10⁺¹⁴ cm^?3 with increasing Te content from x = 0.0 to 0.6. The series resistance for x = 0.0 found to be between 10 and 75 Ω and between 50 and 230 Ω for x = 0.6 in the range of annealing temperature at 150–300 °C.     

Effect of nanocrystallization on the electronic conductivity of vanadate–phosphate glasses

Electronically conducting glasses of the composition xV₂O₅·(100 − x)P₂O₅ for 60 < x < 90 were prepared. The glasses of the composition corresponding to x = 90 exhibited the highest electrical conductivity and they were studied in more detail. The effects of the annealing of the samples on their electrical conductivity, structure and other characteristics were studied by impedance spectroscopy, X-ray diffractometry, DSC and SEM microscopy. It was shown that, at temperatures close to the crystallization temperature T_c (determined from DSC), these glasses turned into nanomaterials consisting of crystalline grains of V₂O₅ (average size 25–35 nm) embedded in the glassy matrix. Their electrical conductivity was higher and the temperature stability was better than those of the starting glasses. It is postulated that the major role in this conductivity enhancement is played by the interfacial regions between crystalline and amorphous phases. The annealing at temperatures exceeding T_c led to massive crystallization and to a conductivity drop. The XRD and SEM observations have shown that the material under study undergoes structural changes: from amorphous at the beginning, to partly crystalline after the annealing at 340 °C and to polycrystalline after the annealing at 530 °C.The obtained results are in agreement with those of our earlier studies on mixed electronic–ionic conducting glasses of the ternary Li₂O–V₂O₅–P₂O₅ system.