A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.     

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O₂ ambient (500 °C) and pure N₂ ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N₂ ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N₂ ambient was lower than that annealed in O₂ ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O₂ ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N₂ ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O₂ ambient so as to obtain LEDs with better performance.     

Analysis of single band and dual band graphene based patch antenna for terahertz region

A microstrip patch antenna is designed using a very thin layer of graphene as the radiating patch, which is fed by a microstrip transmission line. The graphene based patch is designed on a silicon substrate having a dielectric constant of 11.9, to radiate at a single frequency of 2.6 THz. Further, this antenna is made to resonate at dual frequencies of 2.48 THz and 3.35 THz, by changing the substrate height, which is reported for the first time. Various antenna parameters such as return loss, VSWR, gain, efficiency and bandwidth are also determined for the single and dual band operation. For the single band operation, a bandwidth of 145.4 GHz and an efficiency of 92% was achieved. For dual band operation, a maximum bandwidth of 140.5 GHz was obtained at 3.35 THz and an efficiency of 87.3% was obtained at the first resonant frequency of 2.48 THz. The absorption cross section of the antenna is also analysed for various substrate heights and has maximum peaks at the corresponding resonating frequencies. The simulation has been carried out by using a full wave electromagnetic simulator based on FDTD method.     

Organic light sources look forward to optimize the photosynthesis process

We introduce a series of organic LEDs that exploit the monomer and excimer emissions from single phosphor dopant emitters. These organic LEDs were found to be effective in the simultaneous creation of blue and red emission bands essential for plant growth. By varying the concentration of novel phosphorescent dopants selected from a series of newly synthesized platinum complexes [PtL^22–25Cl], we have manufactured the blue-biased LEDs [with the Commission Internationale de L’Eclairage (CIE) coordinates (x, y) (0.27, 0.37)] and the red-biased LEDs [CIE coordinates (0.53, 0.38)], at a high luminance of ≈500 cd/m² and with external electroluminescence (EL) quantum efficiency of 15–18% photon/electron (→ power efficiency 8–12 lm/W). The EL spectrum most suitable for the action spectrum of photosynthesis yield was that of a device incorporating 20 wt.% content of [PtL²³Cl]. This LED yielded photosynthetic photon flux (PPF) approaching 10 μmol s⁻¹ W⁻¹ of the electrical power, a value which significantly exceeds that for the professional lamps used commonly for horticultural lighting.     

Supercontinuum broadening in all-normal dispersion photonic crystal fiber by means of soliton compression in standard single-mode fiber

Using standard single-mode fiber as high-order soliton compressor for broadening supercontinuum in an 80 m long all-normal dispersion photonic crystal fiber is investigated experimentally and numerically. An analytical formula for calculating proper fiber input power to generate the broadest supercontinuum is derived. The numerical results show that the formula is more accurate in high power level corresponding to the soliton order which is larger than two. The measured supercontinuum ? 20 dB bandwidth is broadened from 84.2 nm to 277.1 nm by using a 20 m long standard single-mode fiber without enhancing fiber input power. Numerical calculations of the amplitude noise in the output spectra show that using soliton compression effect can efficiently broaden the spectral bandwidth and not generate obvious noises.     

Broadband super-collimation with low-symmetric photonic crystal

We investigate dispersive properties of two dimensional photonic crystal (PC) called star-shaped PC (STAR-PC) in order to succeed super-collimation over a broad bandwidth. Both time- and frequency-domain numerical methods are conducted. Due to introduced low-symmetry in the primitive cell, flat contours are observed at the fifth band for transverse magnetic mode. The proposed structure supports a super-collimation effect over a broad wavelength range between 1443 nm and 1701 nm with a bandwidth of Δω = 16.42%. The intrinsic characteristic of STAR-PC provides in-plane beam propagation with a limited diffraction length of 120a, where a is the lattice constant. By means of STAR-PC, one may realize super-collimation based single-mode optical devices with a low insertion loss, reduced dispersion and wide bandwidth.     

The high response organic ultraviolet photodetectors based on 2-TNATA as donor

Organic ultraviolet photodetectors (OUV-PDs) were fabricated utilizing 2-TNATA as an electron donor with Bphen and TPBi as electron acceptors. A high sensitivity of OUV-PDs to UV light was obtained in the range of 300–420 nm. The optimized OUV-PDs composed of Bphen as the acceptor offered a photocurrent density up to 336 µA/cm² at ?8 V with 365 nm UV light at a power of 1.2 mW/cm². The high response is attributed to the excellent electron transport ability of Bphen and the matched energy level between 2-TNATA and Bphen.     

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage (I–V) curves and luminescence intensity–current (L–I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of ?3.7 mV/K and the emission peak wavelength increased with a slope of +0.02 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5 °C and from 22.4 to 35.6 °C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1 °C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of ?0.15 nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs.     

Frequency compounded imaging with a high-frequency dual element transducer

This paper proposes a frequency compounding method to reduce speckle interferences, where a concentric annular type high-frequency dual element transducer is used to broaden the bandwidth of an imaging system. In frequency compounding methods, frequency division is carried out to obtain sub-band images containing uncorrelated speckles, which sacrifices axial resolution. Therefore, frequency compounding often deteriorates the target-detecting capability, quantified by the total signal-to-noise ratio (SNR), when the speckle’s SNR (SSNR) is not improved as much as the degraded axial resolution. However, this could be avoided if the effective bandwidth required for frequency compounding is increased. The primary goal of the proposed approach, hence, is to improve SSNR by a factor of two under the condition where axial resolution is degraded by a factor of less than two, which indicates the total SNR improvement to higher than 40% compared to that of an original image. Since the method here employs a dual element transducer operating at 20 and 40 MHz, the effective bandwidth necessary for frequency compounding becomes broadened. By dividing each spectrum of RF samples from both elements into two sub-bands, this method eventually enables four sets of the sub-band samples to contain uncorrelated speckles. This causes the axial resolution to be reduced by a factor of as low as 1.85, which means that this method would improve total SNR by at least 47%. An in vitro experiment on an excised pig eye was performed to validate the proposed approach, and the results showed that the SSNR was improved from 2.081 ± 0.365 in the original image to 4.206 ± 0.635 in the final compounding image.     

Design of an omnidirectional mirror using one dimensional photonic crystal with graded geometric layers thicknesses

We propose a flexible design for one-dimensional photonic crystals (1D-PCs) with a controllable omnidirectional band gap covering the optical telecommunication wavelengths which are 0.85 μm, 1.3 μm and 1.55 μm. We used for this design the chirped grating. Chirping is applied to geometric thicknesses of layers. It takes two forms, one is linear and the other is exponential. We exploit this technique to have the suitable omnidirectional band gap covering the maximum of optical telecommunication wavelengths. With a quarter wave structure, we can have an omnidirectional band gap generating only one of these wavelengths. With graded structure, we obtain, as is reported in this paper, an omnidirectional band gap which covers the wavelengths 1.3 μm and 1.55 μm at the same time with a large bandwidth. We also achieve an omnidirectional band gap containing the wavelength 0.85 μm and which is obviously larger than that of the quarter wave stack.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III–V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiodes and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and interface composition, while the BIRD structure allows for device fabrication without additional passivation. As a demonstration of the large area imaging capabilities of this technology, we have fabricated mid-wavelength 1024 × 1024 pixels superlattice imaging FPAs and 640 × 512 MWIR arrays based on the BIRD concept. These initial FPA have produced excellent infrared imagery.     

Broadband and low amplitude noise supercontinuum generated by using compressed pulse

In this paper, enhancement of bandwidth of supercontinuum generated in a normal dispersion-flattened microstructured fiber by using compressed pulse is demonstrated experimentally and numerically. Using high-order soliton compression effect, the standard single mode fiber is used as a pulse compressor. The experimental measured ?10 dB spectral width is broadened from 75 nm to more than 140 nm by adding a 20 m long standard single mode fiber. Numerical analysis shows that using pulse compressed by a certain length fiber can increase the spectral bandwidth without making extra amplitude noise.     

Improved flatness and tunable bandwidth of the supercontinuum generation in all-normal dispersion-flattened PCF using Littman–Metcalf optical bandpass filter

We have proved that in an all-normal dispersion-flattened photonic crystal fiber (PCF), the four-wave mixing (FWM) process dominantly affects the flatness of the generated supercontinuum (SC). The numerical results show that pulses with steepened edges can enhance the FWM conversion efficiency during the SC’s generation and the minima of the spectral oscillatory structure will be smoothed. A double-pass Littman–Metcalf optical bandpass filter is used to make the 1.60 ps hyperbolic-Secant shaped pulses obtain steepened edges. The experimental results show that the flatness of the SC generated from the 4 nm filtered pulses is improved by 0.21 dB. The SC with 10–65 nm tunable bandwidths is obtained by adjusting the filter bandwidth from 1 nm to 7 nm. Further numerical results show that the filter induced SC’s flatness improvement is more effective for pulses with 2.0–4.0 ps FWHM. The improved SC can be used for applications which require stable modulation carriers and flexible bandwidth.     

A self-method for resolving the problem of apparent LWIR emissivity for quantitative thermography up to 130 °C

In a previous work, we succeeded in connecting normal LWIR apparent emissivity to the spectral one of an aluminum nitride ceramic plate. The key problem was the knowledge of the effective spectral bandwidth in use in the system. Hence we have developed an analyzer which permits to identify the spectral bandwidth of IR system using only its raw data. It proceeds by minimizing the dispersion from linearity of the characteristic thermosignals/integrated radiance over a temperature range of the IR system. The capacities of the analyzer are tested for five commercial cameras. Each of these systems exhibits a similar formatting process implemented during the thermogram recording. The effective spectral bandwidth shows plausible values. It varies significantly from one model to the other and the residual non-linearity is connected to the NETD of the IR system. The robustness of the apparent emissivity measurements is also tested with the aid of emissivity reference of 0.5. The overall accuracy of the method is less than 1%, depending on the specular or diffuse part of the reflected irradiation. Applied in field situation, the method is suitable to detect absolute variation of emissivity of less than 6 ⋅ 10⁻³. We use the analyzer to determine the spectral bandwidth of a commercial 320 × 240 microbolometer uncooled IRFPA camera which had already served to characterize the normal LWIR apparent emissivity of the aluminum nitride ceramic plate. By using the spectral response of the two major microbolometer sensor technologies, the general formulation of apparent emissivity matches our apparent emissivity measurements. An agreement better than 0.6% in absolute value and a less than 6 ⋅ 10⁻³%/°C dispersion are found over the entire temperature range [40–130 °C].     

A study on wavelength dependence and dynamic range of the quadratic response of commercial grade light emitting diodes

Experimental results of a study on the wavelength dependence and the dynamic range of the quadratic response of commercial grade light emitting diodes (LEDs) are reported over a broad spectral range of 680 nm to 1080 nm using ~ 100 fs duration laser pulses from cw mode locked laser oscillator. A large dynamic range of the quadratic response has been demonstrated in a reverse biased LED. The observed dynamic range compares well with that obtained using a biased photomultiplier tube with large internal gain.     

Improving the performance of a far-infrared quantum-ring-based photodetector utilizing asymmetric multi-barrier resonant tunneling

In this paper, a novel structure for quantum ring inter-subband photodetectors (QRIP) is proposed to reduce its dark current. Some additional layers including asymmetric multi-barrier resonant tunneling (AMBRT) in absorption region layers are exploited to provide near unity tunneling probability for generated photocurrents and completely reject thermally generated electrons. AMBRT structure consists of three asymmetric AlGaAs barriers and two InGaAs wells which are designed for operation wavelength of generated photocurrents by absorption of 20 μm. Simulation results show that AMBRT can considerably reduce the dark current compared to previously proposed resonant tunneling structure about three orders of magnitude. As a consequent, higher specific detectivity for AMBRT-QRIP is obtained in the order of ∼10¹¹ cm Hz^1/2/W at 100 K.     

Quadratic detection with two-photon quantum well infrared photodetectors

Two-photon quantum well infrared photodetectors (QWIPs) involving three equidistant subbands take advantage of a resonantly enhanced optical nonlinearity, which is six orders of magnitude stronger than in a bulk semiconductor. This approach results in a sensitive device to measure quadratic autocorrelation of mid-infrared optical pulses from modelocked quantum cascade lasers, nonlinear optical conversion, and free-electron lasers (FEL). We report on autocorrelation measurements at wavelengths in the mid-infrared and Terahertz regimes using ps optical pulses from the FEL at the Forschungszentrum Dresden Rossendorf. In particular, quadratic detection at wavelengths around 5.5 μm is still possible at room-temperature, which is crucial for applications in practical systems. We also report on a two-photon detector which works below the Reststrahlen band at 42 μm (7.1 THz).     

A novel tunable optical oscillator for broadband signals

A tunable optical oscillator that generates signals at the micro- to millimeter-wave band for wireless communication applications is suggested. It uses directly modulated semiconductor lasers, in which sideband modes and four-wave mixing (FWM) conjugate modes are injection locked by the simple control of the applied modulation power. The signals at 15 GHz with phase noise of below ?95 dBc/Hz at an offset frequency of 100 kHz were experimentally obtained. The frequency of the generated signal is tunable, and the maximum achievable signal frequency is limited mainly by the bandwidth of the receiver.     

A new cross-protection dual-WDM-PON architecture with carrier-reuse colorless ONUs

This paper proposes a new cross-protection colorless dual-WDM-PON architecture. The proposed protection scheme can provide 1 + 1 downstream protection and 1:1 upstream protection against both feeder fiber and distribution fiber failures by using the fiber links and AWGs of the neighboring WDM-PON. Wavelength is reused for the down- and up-stream transmissions in dual-WDM-PONs where gain-saturated reflective semi-conductor optical amplifiers (RSOAs) are employed as colorless transmitters in ONUs. The number of extra protection fibers is minimized and wavelength is much more efficiently utilized compared with other protection schemes. The feasibility and operation of the proposed dual-WDM-PON architecture are experimentally verified with 1.25 Gb/s for upstream and 2.5 Gb/s for downstream over 20 km single mode fiber transmission in both working and protection modes.