具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯

石墨烯是近年发现的一种新型多功能材料.在合适的衬底上制备石墨烯成为目前材料制备的一大挑战.本文利用分子束外延(MBE)设备,在Si 衬底上生长高质量的SiC 缓冲层,然后利用直接沉积C原子的方法生长石墨烯,并通过反射式高能电子衍射(RHEED)、拉曼(Raman)光谱和近边X 射线吸收精细结构谱(NEXAFS)等实验技术对不同衬底温度(800、900、1000、1100 °C)生长的薄膜进行结构表征.实验结果表明,在以上衬底温度下都能生长出具有乱层堆垛结构的石墨烯薄膜.当衬底温度升高时,碳原子的活性增强,其成键的能力也增大,从而使形成的石墨烯结晶质量提高.衬底温度为1000 °C时结晶质量最好.其原因可能是当衬底温度较低时,碳原子活性太低不足以形成有序的六方C-sp2环.但过高的衬底温度会使SiC 缓冲层的孔洞缺陷增加,衬底的Si 原子有可能获得足够的能量穿过SiC薄膜的孔洞扩散到衬底表面,与沉积的碳原子反应生成无序的SiC,这一方面会减弱石墨烯的生长,另一方面也会使石墨烯的结晶质量变差.     

咪唑基离子液体非共价修饰的石墨烯结构与分散性

在离子液体氯化-1-烯丙基-3-甲基咪唑(AmimCl)存在的条件下,利用水合肼对氧化石墨烯进行同步还原,制备了一种可稳定分散在N,N-二甲基甲酰胺(DMF)和乙酸丁酯等有机溶剂中的离子液体改性石墨烯(IL-G)。运用红外光谱(FTIR)、紫外-可见吸收光谱(UV-Vis)、热失重分析(TGA)、原子力显微镜(AFM)、拉曼光谱(Raman)、X射线电子衍射(XRD)和X射线光电子能谱(XPS)对制备的改性石墨烯进行结构性能测试,结果表明离子液体AmimCl与石墨烯之间存在π-π和阳离子-π的相互作用,能较好的吸附在石墨烯表面。TGA测试表明IL-G中离子液体的比例约为7.20wt%。同时,AFM结果显示改性石墨烯剥离在DMF中的平均厚度是0.962 nm。由于非共价改性石墨烯可再分散于DMF和乙酸丁酯中,通过紫外可见吸收光谱测得其最大分散浓度分别是1.69 mg·mL-1和1.12 mg·mL-1。     

拉曼光谱在石墨烯结构表征中的应用

石墨烯是sp2碳原子紧密堆积形成的二维原子晶体结构,因其独特的结构与性质引起了科学家们的广泛关注.拉曼光谱是一种快速而又简洁的表征物质结构的方法.主要综述了拉曼光谱技术在石墨烯结构表征中应用的一些最新进展.首先,在系统分析石墨烯声子色散曲线的基础上介绍了石墨烯的典型拉曼特征(G'峰、G峰和D峰),讨论了G'峰、G峰和D峰在石墨烯层数的指认和石墨烯边缘与缺陷态分析中的应用;然后,通过对石墨烯拉曼G峰和G'峰的峰位、峰型以及强度的分析,讨论了石墨烯的层间堆垛方式、掺杂、基底、温度和应力等对石墨烯的电子能带结构的影响;最后,介绍了石墨烯中的二阶和频与倍频拉曼特征以及石墨烯的低频拉曼特征(剪切和层间呼吸振动模),并讨论了其对石墨烯结构的依赖性.     

细菌视紫红质多重突变体结构变化及其中间态的寿命

采用基因定点突变的方法, 构建了细菌视紫红质(Bacteriorhodopsin, BR)的3种突变体蛋白, 即单突变体BRE194Q、三突变体BRI119T/T121S/A126T和四突变体BRI119T/T121S/A126T/E194Q. 测定了突变体和野生型BR在水溶液和聚乙烯醇(PVA)膜中的紫外-可见吸收光谱和拉曼光谱, 采用显微视频录像技术记录了PVA膜中野生型和3个突变体样品的M态寿命. 与野生型BR相比较, 在水溶液中, 单突变体的可见吸收光谱的最大吸收峰发生了轻微红移, 三突变体和四突变体的最大吸收峰则分别发生了11.0和12.0 nm的明显蓝移. 在PVA膜中, 3个突变体BR的可见吸收光谱的最大吸收峰均发生蓝移, 四突变体BR的最大吸收峰为557 nm, 蓝移达15.0 nm. 四突变体BR在水溶液中的共振拉曼光谱不仅表现有与M态特征相关的1567和1573 cm-1谱带, 还有L态特征带1334 cm-1及N态特征带1200, 1328, 1530和1549 cm-1. 在PVA膜中的样品与在水溶液中的比较, 四突变体共振拉曼光谱的1334和1549 cm-1带消失, 同时1187 cm-1带的强度下降. 显微视频录像技术记录的PVA膜中样品的M态寿命表明, 野生型BR的M态寿命最短, 单突变体的M态寿命小于1.0 s, 三突变体的寿命为3.0 s, 四突变体的寿命为2.0 s.     

大尺寸石墨烯量子点组装体的制备及电化学发光性能

对氧化石墨烯纳米材料进行HNO₃氧化处理, 制备了水溶性好且具有强电化学发光(ECL)活性的大尺寸石墨烯量子点组装体(Large-sized graphene quantum dot assemblies, LSGQD-NAs). 利用透射电子显微镜(TEM)、 原子力显微镜(AFM)、 傅里叶变换红外光谱(FTIR)和拉曼光谱(Raman)等方法对其进行了表征, 结果表明, 石墨烯量子点组装体的平均高度为20 nm, 且富含大量的羟基和羧基. 电化学测试结果显示, 在共反应物K₂S₂O₈存在下, LSGQD-NAs在阴极产生很强的ECL(峰值约在685 nm); 并推测了其ECL反应机理, 发现LSGQD-NAs容易通过中心未氧化的石墨烯π-π作用于GC电极表面进行组装修饰. 本研究为基于石墨烯量子点ECL传感器的研究提供了新方法.     

酞菁铅在石墨烯表面吸附行为的拉曼光谱研究

利用石墨烯增强拉曼散射效应可以获得与石墨烯接触的某些分子的拉曼增强信号, 并且对于不同的分子或振动模, 其拉曼增强因子不同. 根据这一特征, 本工作利用拉曼光谱技术对石墨烯表面上酞菁铅(PbPc)分子Langmuir-Blodgett (LB)膜在退火过程中吸附构型的变化进行了跟踪研究. 发现随着退火温度的升高, 石墨烯表面上PbPc分子的拉曼信号经历了一个先增强后减弱的过程, 在升华温度点附近强度达到最大, 表明PbPc发生了由直立向平躺取向的转变; 同时, 在PbPc分子升华温度点附近, 由于对称性破坏导致散射截面低的振动模出现, 并且该振动模强度随着退火温度的进一步升高而增强, 表明非平面的PbPc分子受石墨烯π-π相互作用的影响而形变加剧, 向平面结构转变; 在更高的退火温度下, 则出现一些不属于PbPc分子的拉曼振动峰, 表明PbPc分子在石墨烯表面由Pb(II)被还原成Pb(0).     

一种有效的制备聚乙二醇修饰氧化石墨烯的方法

为提高氧化石墨烯(GO)的生物相容性从而扩展其在高性能生物材料制备中的应用,采用甲苯-2,4-二异氰酸酯作为桥联剂,制备了四臂星型聚乙二醇修饰氧化石墨烯(GO-TDI-sPEG),该产物在水中仍然可以稳定分散.采用傅里叶红外光谱(FTIR)、拉曼光谱(Raman)、X-射线衍射(XRD)、原子力显微镜(AFM)、透射电子显微镜(TEM)和热重分析(TGA)对接枝产物进行表征.产物在2861 cm-1和1093 cm-1处出现的特征红外吸收表明sPEG已接枝到GO上.产物的Raman光谱中D模与G模信号变弱,且ID/IG值变化不大,说明sPEG改性后的氧化石墨物理结构没有发生变化.XRD曲线上产物衍射峰消失,表明经聚合物修饰后氧化石墨被完全剥离.TGA数据表明原始GO在约160℃开始发生热失重,经修饰后,大约在260℃开始热失重,热稳定性增加了约100℃.由TEM图片可以观察到GO及改性石墨烯产物剥离程度较高,且片上分布有较多聚合物点.且AFM图片显示GO的平均厚度大约为0.85 nm,接上聚合物后部分厚度增加到约1.2 nm.     

GNs-MnO2复合催化剂的制备及催化氧还原性能

石墨烯由单层碳原子组成,具有大的比表面积和超高的导电性,广泛应用于催化与储能领域.本工作结合石墨烯独特的物理化学性质和结构特性,采用原位氧化还原法,以KMnO4和石墨烯(GNs)为原料合成GNs-MnO2氧还原催化剂,通过X射线衍射(XRD)、拉曼光谱(Raman)、透射电镜(TEM)、热重(TG)、BET等分析测试技术研究了纳米GNs-MnO2复合材料的微观结构特征.结果表明,合成的MnO2纳米线直接生长在石墨烯的表面,增加了MnO2的比表面积,提高了催化剂的活性位点.电化学测试表明,合成的GNs-MnO2催化剂在碱性介质中电催化氧还原电位比纯MnO2的氧还原电位正移80 mV,电流提高了1.3倍,在燃料电池氧还原电催化中有一定的应用前景.     

NEXAFS光谱分析聚合物修饰的单壁碳纳米管

利用C1s、O1s、N1s近边X射线吸收精细结构(Near Edge X-Ray Absorption Fine Structure,NEXAFS)光谱对聚合物修饰的碳纳米管进行了分析,研究了氧化及偶联聚合物对碳纳米管结构的影响。氧化碳纳米管及十八胺修饰的、聚合物/十八胺双修饰的碳纳米管的NEXAFS光谱均出现了碳/氧K边π*(C=O)和σ*(C-O)共振峰;而十八胺修饰的、聚合物/十八胺双修饰的碳纳米管则出现了氮K边π*(N-C=O)和σ*(N1s)共振峰。分析表明,NEXAFS光谱可有效表征聚合物修饰的碳纳米管。     

TiO_2薄膜晶相转换的光谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了TiO2薄膜样品,对样品在800-1100℃范围内进行退火处理,并对样品进行了拉曼光谱、透射光谱和荧光发光(PL)光谱测试.拉曼谱测试表明,随退火温度的升高,样品由锐钛矿相经锐钛矿与金红石的混相最终变为金红石相.透射谱测试表明,样品的吸收带边随着样品的相转换而发生红移.在总的趋势上,样品的折射率n随相转换而升高,厚度d和带隙Eg随相转换而降低.荧光发光光谱测试表明,在557-570nm和794-812nm范围内出现了两个发光光谱带.随着相转换,557-570nm范围内的发光光谱强度由强到无,而794-812nm范围内的发光光谱强度由弱到强.     

Low-temperature synthesis and characteristics of fractal graphene layers

Large scale fractal graphene layers are obtained by complex method of liquid phase exfoliation and self-organization. Atomic force microscopy (AFM) is used to study the surface properties of formed layers and to assess their thickness. Surface potential of graphene and potential transition between the graphene and substrate is measured by Kelvin probe method. The influence of the effect of dielectric confinement on the optical properties of graphene is discussed in this work. Raman scattering spectra were used for structural analysis and assessment of the level of defects. Current-voltage characteristics of graphene ribbons were measured and discussed for different number of layers.     

Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure

Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC (0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate. The crystal polytypes and luminescent properties of the film were characterized by reflection high energy electron diffraction (RHEED) and photoluminescence (PL), respectively. The results of RHEED indicated that the film was 6H-SiC/3C-SiC/6H-SiC with the quantum well structure. The results of PL excited by He-Gd laser at room temperature showed that there were intense emissions in the range of 480–600 nm, which could not be observed from the substrate. The fitting peaks were consistent with the results calculated from the model of quantum well structure, which showed that such intense emissions were probably from the quantum wells with different widths.     

Observation of RHEED intensity variations during ALE-Growth of CdTe-Epilayers

We present the first reflected-high-energy electron diffraction (RHEED) observations during atomic layer epitaxy (ALE) growth of CdTe on GaAs substrates. The evolution of the RHEED pattern in the initial growth stages shows that, regardless of the large lattice mismatch, growth becomes two-dimensional after the deposition of a few monolayers. We have observed intensity variations of two RHEED spots under surface resonance conditions which make the spots sensitive to either Cd- or Te-deposition. We show that this new approach is superior to the observation of the specular spot for the measurement of surface coverages and adsorption kinetics. The Cd- and Tespots have been monitored during CdTe-ALE. The observed intensity variations can be explained by simple adsorption models. From the change in the spot intensities with substrate temperature during a permanent Cd- or Teexposure of the sample we deduce a drop in the Cd- and Te-surface coverage from 1 to 0.5 at substrate temperatures higher than 315 °C.     

6H-SiC/3C-SiC/6H-SiC量子阱结构制备及其发光特性

利用固源分子束外延(SSMBE)生长技术, 在1350K的衬底温度下, 通过改变Si束流强度, 在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜, 并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征. RHEED 结果显示生长的薄膜为6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜. 室温下He-Gd激光激发的光致发光(PL)谱显示, 薄膜在480-600 nm范围内存在衬底未观察到的较强发光. 拟合得到的发光峰与依据量子阱结构模型计算出的发光位置较为一致. 由此表明, 该强发光带可能是6H-SiC/3C-SiC/6H-SiC量子阱结构的发光.     

Influence of Substrate-Target Distance on Structural and Optical Properties of Ga and (Al + Ga)-doped ZnO Thin Films Deposited by Radio Frequency Sputtering

Ga-doped ZnO and (Ga?+?Al) co-doped ZnO thin films were deposited on glass substrates by radio frequency magnetron sputtering for three distances d between a substrate–target. The influence of the distance between substrate–target upon structure, microstructure, vibrational properties, and optical band gap of the thin films was analyzed by X-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy, and optical transmission measurements. The diffraction patterns revealed that the ZnO film crystallites are preferentially oriented with the (002) planes parallel to the substrate surface. AFM images show a smooth and uniform surface as well as a high compact structure. The Raman results reveal that the co-doping with Al?+?Ga introduces 2B₁(low) band and leads to the increase of intensity for longitudinal-optic’s band. In the visible region, the average value of the transmittance was above 80%.     

Preparation of Graphene by Using an Intense Cavitation Field in a Pressurized Ultrasonic Reactor

A new and efficient method to produce a large quantity of high‐quality and non‐oxidized graphene flakes from powdered natural graphite by using a high‐intensity cavitation field in a pressurized ultrasonic reactor is demonstrated. TEM and selected‐area electron diffraction (SAED) confirmed the ordered graphite crystal structure of graphene. Atomic force microscopy (AFM) was used to examine the thickness of the graphene sheets. The delamination (exfoliation) of natural graphite in the liquid phase depends on the physical effects of ultrasound, which break down the 3D graphite structure into a 2D graphene structure. The prepared graphene is of high purity and without defects because no strongly oxidizing chemicals are used and no toxic products result. TEM shows that graphene nanosheets were produced with sizes in the range of tens to hundreds of square nanometers; these nanosheets were smooth and without any ripples and corrugations. High‐resolution TEM (HRTEM) and SAED analysis confirmed that the products were graphene nanosheets.     

KH-570功能化石墨烯的制备与表征

采用Hummers法对天然石墨进行氧化处理制备了氧化石墨烯,通过γ-甲基丙烯酰氧丙基三甲氧基硅烷与氧化石墨烯反应得到功能化氧化石墨烯,然后在水合肼的作用下制备了功能化石墨烯。未烘干的功能化石墨烯在超声处理下,能稳定分散在体积比为9∶1(V/V)的乙醇/水、丙酮/水或N,N-二甲基甲酰胺/水的混合溶剂中。用傅立叶变换红外光谱、原子力显微镜、X射线光电子能谱及X射线衍射对样品结构、形貌进行了分析。结果表明,KH-570上的硅氧烷与氧化石墨烯上的羟基发生了反应,经水合肼还原后,功能化石墨烯的无序度增加,层间距也比功能化氧化石墨烯的缩小了。功能化石墨烯在DMF/水中呈高度剥离状态,片层厚度为1.1～2.3 nm。     

Characterization of Thin Polymer Films on the Nanometer Scale with Confocal Raman AFM

The combination of an atomic force microscope (AFM) with a Confocal Raman Microscope (CRM) has been used to study the composition of various thin films of polymer blends. The high spatial resolution of the AFM enables the morphological characterization of the polymer blends on the nanometer scale. Furthermore, when operating the AFM in Digital Pulsed Force Mode (DPFM), topographic information and local stiffness can be simultaneously recorded. This allows the material-sensitive characterization of heterogeneous materials. Thin films where PMMA (at room temperature a glassy polymer) is blended with two different styrene-butadiene rubbers are investigated. The presence of PMMA in both phase-separated thin films allows the comparison of the mechanical properties of the two different rubber phases using DPFM-AFM. When PMMA is blended with PET due to their similar mechanical properties (both are in the glassy state at room temperature) the assignment of the two phases to the corresponding polymers by AFM is rather difficult. Here, Raman spectroscopy provides additional information on the chemical composition of materials. In combination with a confocal microscope, the spatial distribution of the various phases can be determined with a resolution down to 200 nm. Therefore, the topographically different structures observed in AFM images can be associated to the chemical composition by using the Confocal Raman Microscope (CRM).     

Fe3O4磁性纳米粒子-氧化石墨烯复合材料的可控制备及结构与性能表征

首先利用高温分解法制备了粒径为18 nm的Fe₃O₄磁性纳米粒子, 并进行羧基化修饰, 然后与聚乙烯亚胺(PEI)化学修饰的氧化石墨烯进行交联反应, 得到磁功能化的氧化石墨烯(MGO)复合材料. 研究了氧化石墨烯片上的磁性纳米粒子的可控负载及其对复合材料磁性能的影响. 利用透射电子显微镜(TEM), 原子力显微镜(AFM), X射线衍射(XRD), 傅里叶变换红外(FT-IR)光谱, 热重分析(TGA), 振荡样品磁强计(VSM)等手段对MGO复合材料的形貌, 结构和磁性能进行了表征. 结果表明, 我们发展的MGO复合材料的制备方法具有简单、可控的优点, 所制备的MGO复合材料具有较高的超顺磁性. 该类磁性氧化石墨烯复合材料有望在磁靶向药物、基因输运、磁共振造影以及磁介导的生物分离和去除环境污染物等领域获得广泛的应用.