N incorporation and electronic structure in N-doped TiO2(1 1 0) rutile

We describe the growth and properties of well-defined epitaxial TiO_2−xN_x rutile for the first time. A mixed beam of atomic N and O radicals was prepared in an electron cyclotron resonance plasma source and Ti was supplied from a high-temperature effusion cell or an electron beam evaporator, depending on the required flux. A very high degree of structural quality is generally observed for films grown under optimized anion-rich conditions. N substitutes for O in the lattice, but only at the ∼1 at.% level, and is present as N³⁻. Epitaxial growth of TiO₂ and TiO_2−xN_x rutile prepared under anion-rich conditions is accompanied by Ti indiffusion, leading to interstitial Ti (Ti_i), which is a shallow donor in rutile. Our data strongly suggest that Ti_i donor electrons compensate holes associated with substitutional N²⁻ (i.e., Ti(III) + N²⁻ → Ti(IV) + N³⁻), leading to highly resistive or weakly n-type, but not p-type material. Ti 2p core-level line shape analysis reveals hybridization of N and Ti, as expected for substitutional N. Ti-N hybridized states fall in the gap just above the VBM, and extend the optical absorption well into the visible.     

Epitaxial MoOx nanostructures on TiO2(1 1 0) obtained using thermal decomposition of Mo(CO)6

Stoichiometric and highly-defective TiO₂(1 1 0) surfaces (called as yellow and blue, respectively) were exposed to Mo(CO)₆ vapours in UHV and in a reactive O₂ atmosphere. In the case of yellow-TiO₂, an O₂ reactive atmosphere was necessary to obtain the Mo(CO)₆ decomposition at 450 °C with deposition of MoO_x nanostructures where, according to core level photoemission data, the Mo⁺⁴ state is predominant. In the case of blue-TiO₂ it was possible to obtain Mo deposition both in UHV and in an O₂ atmosphere. A high dose of Mo(CO)₆ in UHV on blue-TiO₂ allowed the deposition of a thick metallic Mo layer. An air treatment of this sample at 580 °C led to the elimination of Mo as MoO₃ and to the formation of a transformed layer of stoichiometry of Ti_(1−x)Mo_xO₂ (where x is close to 0.1) which, according to photoelectron diffraction data, can be described as a substitutional near-surface alloy, where Mo⁺⁴ ions are embedded into the titania lattice. This embedding procedure results in a stabilization of the Mo⁺⁴ ions, which are capable to survive to air exposure for a rather long period of time. After exposure of the blue-TiO₂(1 1 0) substrate to Mo(CO)₆ vapours at 450 °C in an O₂ atmosphere it was possible to obtain a MoO₂ epitaxial ultrathin layer, whose photoelectron diffraction data demonstrate that is pseudomorphic to the substrate.     

IR and XPS investigation of visible-light photocatalysis—Nitrogen-carbon-doped TiO2 film

To use solar irradiation or interior lighting efficiently, we sought a photocatalyst with high reactivity under visible light. Nitrogen and carbon doping TiO_2−x−yN_xC_y films were obtained by heating the TiO₂ gel in an ionized N₂ gas and then were calcined at 500 °C. The TiO_2−x−yN_xC_y films have revealed an improvement over the TiO₂ films under visible light (wavelength, 500 nm) in optical absorption and photocatalytic activity such as photodegradation of methyl orange. X-ray photoemission spectroscopy, infrared spectrum and UV-visible (UV-vis) spectroscopy were used to find the difference of two kinds of films. Nitrogen and carbon doped into substitutional sites of TiO₂ has been proven to be indispensable for band-gap narrowing and photocatalytic activity.     

Preparation of nitrogen-doped titanium dioxide with visible-light photocatalytic activity using a facile hydrothermal method

Nitrogen-doped TiO₂ (N-TiO₂) nanoparticles have been successfully prepared via a direct and simple hydrothermal reaction of a commercial Degussa P25 with triethanol amine as solvent and nitrogen source. As-prepared N-TiO₂ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV-vis) absorption spectra, electron probe microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS) techniques. The results confirm that hydrothermal reaction is an effective way to incorporate nitrogen into the TiO₂ lattice, especially nitrogen substitute for titanium. The nitrogen concentration in TiO₂ can be as high as 21% (molar ratio), which is described as Ti_1−yO_2−xN_x+y (in this paper, x=0.36, y=0.27, i.e., Ti_0.73O_1.64N_0.63). The chemical statuses of N have been assigned to N-Ti-O and O-N-O in the TiO₂ lattice as identified by XPS. Photocatalytic degradation of methyl orange has been carried out in both UV-vis (simulated solar light) and the visible region (λ>400 nm). N-TiO₂ exhibits higher activity than the Degussa P25 TiO₂ photocatalyst, particularly under visible-light irradiation. This study has developed a promising and practical pathway to new nitrogen-doped photocatalysts.     

Effect of N2 ion flux on the photocatalysis of nitrogen-doped titanium oxide films by electron-beam evaporation

Nitrogen-doped titanium oxide (TiO_xN_y) films were prepared with ion-assisted electron-beam evaporation. The nitrogen (N) incorporated in the film is influenced by the N₂ flux modulated by the N₂ flow rate through an ion gun. The TiO_xN_y films have the absorption edge of TiO₂ red-shifted to 500 nm and exhibit visible light-induced photocatalytic properties in the surface hydrophilicity and the degradation of methylene blue. The structures and states of nitrogen in the films are investigated by X-ray diffraction patterns (XRD), and X-ray photoelectron spectroscopy (XPS) and related to their visible light-induced photocatalytic properties. The results indicate that the substitutional N in anatase TiO₂ can induce visible light photocatalysis. The substitutional N is readily doped by the energetic nitrogen ions from the ion gun. The best photocatalytic activity is obtained at the largest N loading about 5.6 at.%, corresponding to the most substitutional N in anatase TiO₂. The film exhibits the degradation of methylene blue with a rate-constant (k) about 0.065 h⁻¹ and retaining 7° water contact angle on the surface under visible light illumination.     

Reasons for the deactivation of Pt/TiO2 photocatalyst treated by inert gas N2

The effect of N₂ treatment on the photocatalytic activity of Pt⁰/TiO₂ was investigated. The results showed that after treatment at 500 °C in N₂, 70% of the photocatalytic activity of 1.0 wt.% Pt⁰/TiO₂ was lost by the evaluation of photocatalytic oxidation reaction of C₃H₆. Transmission electron microscopy (TEM) and Ar⁺ ion sputtering tests revealed that in the course of high-temperature N₂ treatment, the size of Pt⁰ particles on TiO₂ increases and a strong interaction between metal and support, i.e. Pt⁰ particles encapsulated by Ti_xO_y, happens, which are the reasons for the deactivation of Pt⁰/TiO₂ photocatalyst treated by high-temperature N₂.     

Aerosol-assisted flow synthesis of WxTi1−xO2 solid solution spheres with enhanced photocatalytic activity

In this paper, W_xTi_1−xO₂ solid solutions (x = 0.000, 0.005, 0.010, 0.015, and 0.020) microspheres were synthesized with an aerosol-assisted flow synthesis method. The resulting samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen sorption, UV-vis diffuse reflectance spectrum (DRS) and X-ray photoelectron spectroscopy (XPS). The photocatalytic activities of the as-prepared catalysts were measured by the degradation of rhodamine B (RhB) under visible light irradiation (λ ≥ 420 nm). All the solid solutions exhibited higher photocatalytic activities than pure TiO₂ and the W_0.015Ti_0.985O₂ solid solution possessed the highest photocatalytic activity. The degradation constant of RhB on W_0.015Ti_0.985O₂ solid solution catalyst was about 15 times of that of the pure TiO₂ and 25 times of that of Degussa P25, respectively. This study provides an effective method to prepare visible light photocatalysts on a large scale.     

Photooxidation of different organic dyes (RB, MO, TB, and BG) using Fe(III)-doped TiO2 nanophotocatalyst prepared by novel chemical method

The nano-structured Fe(III)-doped TiO₂ photocatalysts with anatase phase have been developed for the oxidation of non-biodegradable different organic dyes like methyl orange (MO), rhodamine B (RB), thymol blue (TB) and bromocresol green (BG) using UV-Hg-lamp. The different compositions of Fe_xTi_1−xO₂ (x = 0.005, 0.01, 0.05, and 0.1) nanocatalysts synthesized by chemical method (CM), have been characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectra, specific surface area (BET), transmission electronic microscopy (TEM) analysis, XPS, ESR and zeta potential. From XRD analysis, the results indicate that all the compositions of Fe(III) doped in TiO₂ catalysts gives only anatase phase not rutile phase. For complete degradation of all the solutions of the dyes (MO, RB, TB, and BG), the composition with x = 0.005 is more photoactive compared all other compositions of Fe_xTi_1−xO₂, and degussa P25. The decolorization rate of different dyes decreases as Fe(III) concentration in TiO₂ increases. The energy band gap of Fe(III)-doped TiO₂ is found to be 2.38 eV. The oxidation state of iron has been found to be 3+ from XPS and ESR show that Fe³⁺ is in low spin state.     

X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(0 0 1)

TiO₂ and TiN_xO_y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO₂[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 Å/min) of TiO₂ and (−40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ?-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.     

Visible-light photocatalytic activity of nitrogen-doped TiO2 thin film prepared by pulsed laser deposition

Nitrogen-doped titanium dioxide (TiO_2−xN_x) thin films have been prepared by pulse laser deposition on quartz glass substrates by ablated titanium dioxide (rutile) target in nitrogen atmosphere. The x value (nitrogen concentration) is 0.567 as determined by X-ray photoelectron spectroscopy measurements. UV-vis spectroscopy measurements revealed two characteristic deep levels located at 1.0 and 2.5 eV below the conduction band. The 1.0 eV level is attributable to the O vacancy state and the 2.5 eV level is introduced by N doping, which contributes to narrowing the band-gap by mixing with the O2p valence band. The enhanced degradation efficiency in a broad visible-light range was observed from the degradation of methylene blue and methylene orange by the TiO_2−xN_x film.     

Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Hf_1−xSi_xO_y is an attractive candidate material for high-k dielectrics. We report in this work the deposition of ultra-thin Hf_1−xSi_xO_y films (0.1 ≤ x ≥ 0.6) on silicon substrate at 450 °C by UV-photo-induced chemical vapour deposition (UV-CVD) using 222 nm excimer lamps. Silicon(IV) and hafnium(IV) organic compounds were used as the precursors. Films from around 5 to 40 nm in thickness with refractive indices from 1.782 to 1.870 were grown. The deposition rate was found to be of 6 nm/min at a temperature of 450 °C. The physical, interfacial and electrical properties of hafnium silicate (Hf_1−xSi_xO_y) thin films were investigated by using X-ray photoelectron spectroscopy, ellipsometry, FT-IR, C-V and I-V measurements. XRD showed that they were basically amorphous, while Fourier transform infrared spectroscopy (FT-IR), clearly revealed Hf-O-Si absorption in the photo-CVD deposited Hf_1−xSi_xO_y films. Surface and interfacial properties were analysed by TEM and XPS. It is found that carbon content in the films deposited by UV-CVD is very low and it also decreases with increasing Si/(Si + Hf) ratio, as low as about 1 at.% at the Si/(Si + Hf) ratio of 60 at.%.     

Physical properties of NxTiO2 prepared by sol–gel route

The compounds N_xTiO₂(x=0, 0.05, 0.1, 0.2) with the anatase structure have been synthesized by Sol–Gel method using Tri-ethyl Amine as nitrogen source and their optical, electrical and electrochemical properties are investigated. The electrical conductivity and thermoelectric power are measured in the temperature rang 300–600 K. The samples exhibit p-type behavior in contrast to TiO₂. The doped-samples exhibit two optical transitions (2.35≤E_h−Vis(eV)≤2.55; 1.97≤E_l−Vis (eV)≤2.06) directly allowed in the visible region, while only one transition is observed in UV region (E_UV∼3.00 eV). Pure TiO₂ shows direct band gap transition of 3.17 eV. The results confirm experimentally the calculations of Di. Valentin et al. [42]. The transitions E_h−Vis and E_l−Vis are attributed respectively to the promotion of electrons from the localized N 2p and π^? N–O bond to the conduction band. In all cases, E_UV is associated to the forbidden band energy. Though that the conductivity is generally improved by doping process, only N_0.05TiO₂ and N_0.1TiO₂ shows an enhanced mobility. The mechanism of conduction takes place by small polaron hopping. The band edge positions of N_xTiO₂ (x=0, 0.05, 0.1, 0.2) at room temperature is predicted from the obtained physical properties. This study proves experimentally the principal role of nitrogen in doping process and permits the electronic states localization associated with N-impurities in TiO₂ anatase.     

Growth and characterization of Nd:Lu3ScxGa5 − xO12 series laser crystals

A new series Nd:Lu₃Sc_xGa_5 − xO₁₂ (x = 0.5, 0.8, 1, 1.2 and 1.5) laser crystals have been successfully grown by the optical floating zone method. Their absorption and luminescence spectra were measured at room temperature and spectral parameters were systemically calculated using Judd-Ofelt (JO) theory. The fluorescence τ_f lifetimes were experimentally measured and compared with the theoretical results. Diode-pumped continuous-wave (CW) laser performance at 1.06 μm with mixed crystals was demonstrated. The influence of different x values on laser performance and spectral parameters was also discussed. All the results show that Nd:Lu₃Sc_xGa_5 − xO₁₂ series crystals should be suitable for laser application.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Structural,electronic and optical properties of CdxZn1 − xS alloys from first-principles calculations

Structural, electronic and optical properties as well as structural phase transitions of ternary alloy Cd_xZn_1 − xS have been investigated using the first-principles calculations based on the density functional theory. We found that the crystal structure of Cd_xZn_1 − xS alloys transforms from wurtzite to zinc blende as Cd content of x=0.83$x=0.83$. Effect of Cd content on electronic structures of Cd_xZn_1 − xS alloys has been studied. The bandgaps of Cd_xZn_1 − xS alloys with wurtzite and zinc blende structures decrease with the increase of Cd content. Furthermore, dielectric constant and absorption coefficient also have been discussed in detail.     

Theoretical investigation of the conduction and valence band offsets of GaAs1−x Nx/GaAs1−yNy heterointerfaces

Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs_1−xN_x/GaAs_1−yN_y heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs_1−xN_x over layer falls completely inside the band gap of the substrate GaAs_1−yN_y and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs_1−yN_y which is fully inside the band gap of the GaAs_1−xN_x over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs_1−xN_x/GaAs and GaAs_1−xN_x/GaAs_0.98N_0.02 heterointerfaces have been determined.     

Effect of microstructure on the conductivity of a NASICON-type lithium ion conductor

Sintering temperature is used to control the microstructure of Li_{1 + x + y}Al_xTi_2 − xSi_yP_3 − yO₁₂ (x = 0.3, y = 0.2), a NASICON-type glass-ceramic. Scanning Electron Microscope imaging, X-Ray Diffraction, and Electrochemical Impedance Spectroscopy are employed to show that increase in sintering temperature increases conductivity while generating secondary crystalline phases. Total conductivity is as high as 3.81 × 10⁻⁴ S cm⁻¹ for sintering temperatures above 1000 °C. Crystallization of dielectric phases places the optimal sintering temperature in the 900 °C to 1000 °C range. Thermal analysis of the glass precursor reveals the glass transition, and crystallization temperatures.     

Exploration of layered-type pseudo four-component Li-Ni-Co-Ti oxides

A series of layered-type pseudo four-component Li-Ni-Co-Ti oxides were prepared to explore optimal cathode materials for a lithium-ion secondary battery. The new layered-type compounds were prepared using a combinatorial material-preparation system based on electrostatic spray deposition (the “M-ist Combi” system), and combinatorial powder X-ray diffraction. The composition region of the new compounds (Li_α(Ni_xCo_yTi_z)O₂ (α∼1, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, z∼0.2, x + y + z = 1.0)) was found to be wider than the composition region previously reported (LiNi_0.8−yCo_0.2Ti_yO₂ (0 ≤ y ≤ 0.1)).     

Conductivity and sintering property of LaNi1 − xFexO3 ceramics prepared by Pechini method

Preparation of LaNi_1 − xFe_xO₃, which is one of the candidate materials of solid oxide fuel cell cathode, current collecting layer and interconnect coating was examined with Pechini method and solid state reaction method. Single phase LaNi_1 − xFe_xO₃ with large Ni content has successfully been prepared by low temperature sintering as 750 °C with Pechini method, whereas large amount of raw materials has remained with solid state reaction method by sintering at the same temperature. It can be ascribed to more homogenous cation distribution in raw powder material prior to sintering with Pechini method. It has also been revealed that LaNi_1 − xFe_xO₃ with x lower than 0.3 is thermodynamically unstable in air above 1000 °C. LaNi_0.6Fe_0.4O₃ showed superior property as cathode material with high electrical conductivity, thermodynamic stability and appropriate sintering property.     

A density functional theory study on the adsorption and dissociation of N2O on Cu2O(1 1 1) surface

Density functional theory has been employed to investigate the adsorption and the dissociation of an N₂O at different sites on perfect and defective Cu₂O(1 1 1) surfaces. The calculations are performed on periodic systems using slab model. The Lewis acid site, Cu_CUS, and Lewis base site, O_SUF are considered for adsorption. Adsorption energies and the energies of the dissociation reaction N₂O → N₂ + O(s) at different sites are calculated. The calculations show that adsorption of N₂O is more favorable on Cu_CUS adsorption site energetically. Cu_CUS site exhibits a very high activity. The Cu_CUS-N₂O reaction is exothermic with a reaction energy of 77.45 kJ mol⁻¹ and an activation energy of 88.82 kJ mol⁻¹, whereas the O_SUF-N₂O reaction is endothermic with a reaction energy of 205.21 kJ mol⁻¹ and an activation energy of 256.19 kJ mol⁻¹. The calculations for defective surface indicate that O vacancy cannot obviously improve the catalytic activity of Cu₂O.