A New Fourier Iterative Algorithm for the Design of Phase－only Diffractive Optical Element Used in Laser Beam Shaping

ＡＮｅｗＦｏｕｒｉｅｒＩｔｅｒａｔｉｖｅＡｌｇｏｒｉｔｈｍｆｏｒｔｈｅＤｅｓｉｇｎｏｆＰｈａｓｅ－ｏｎｌｙＤｉｆｆｒａｃｔｉｖｅＯｐｔｉｃａｌＥｌｅｍｅｎｔＵｓｅｄｉｎＬａｓｅｒＢｅａｍＳｈａｐｉｎｇＳＡＮＧＴａｏ；ＬＩＡＯＪｉａｎｇｈｏｎｇ；ＬＵＺ...     

Geometric Arrangement with Multiplicity of Laser Beams in Target Area

ＧｅｏｍｅｔｒｉｃＡｒａｎｇｅｍｅｎｔｗｉｔｈＭｕｌｔｉｐｌｉｃｉｔｙｏｆＬａｓｅｒＢｅａｍｓｉｎＴａｒｇｅｔＡｒｅａＴＡＮＪｉｃｈｕｎＷＥＩＸｉａｏｆｅｎｇ１）ＣＨＥＮＧＺｈｅＹＵＡＮＸｉａｏｄｏｎｇ１）ＬＩＵＬｉｒｏｎｇＳＨＩＺｈｉｑｕａｎ（Ｄｅ...     

Cross-talk Noise Suppresion in Volume Holography with a Composite Reading Beam

ＣｒｏｓｔａｌｋＮｏｉｓｅＳｕｐｐｒｅｓｉｏｎｉｎＶｏｌｕｍｅＨｏｌｏｇｒａｐｈｙｗｉｔｈａＣｏｍｐｏｓｉｔｅＲｅａｄｉｎｇＢｅａｍＬＩＸｉａｏｃｈｕｎＷＵＭｉｎｘｉａｎＨＥＱｉｎｇｓｈｅｎｇＪＩＮＧｕｏｆａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＰｒｅｃｉ...     

Propagation and Beam Quality of Flattened Hermite-Gauss Beams

ＰｒｏｐａｇａｔｉｏｎａｎｄＢｅａｍＱｕａｌｉｔｙｏｆＦｌａｔｔｅｎｅｄＨｅｒｍｉｔｅ－ＧａｕｓｓＢｅａｍｓ￥ＨＵＡＲｅｎｚｈｏｎｇ；ＱＩＡＮＬｉｅｊｉａ，ＦＡＮＤｉａｎｙｕａｎ；ＤＥＮＣＸｉｍｉｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃ...     

Calculation of Momentum Coupled by a High-Power Laser Beam

ＣａｌｃｕｌａｔｉｏｎｏｆＭｏｍｅｎｔｕｍＣｏｕｐｌｅｄｂｙａＨｉｇｈＰｏｗｅｒＬａｓｅｒＢｅａｍＬＵＪｉａｎＳＨＥＮＺｈｏｎｇｈｕａＮＩＸｉａｏｗｕＨＥＡｎｚｈｉ（ＤｅｐａｒｔｍｅｎｔｏｆＡｐｐｌｉｅｄＰｈｙｓｉｃｓ，ＮａｎｊｉｎｇＵｎｉｖｅｒ...     

Frequency Calibration of MOT Experiment using Atomic Beam Apparatus

ＦｒｅｑｕｅｎｃｙＣａｌｉｂｒａｔｉｏｎｏｆＭＯＴＥｘｐｅｒｉｍｅｎｔｕｓｉｎｇＡｔｏｍｉｃＢｅａｍＡｐｐａｒａｔｕｓＬＩＵＸｕｎｍｉｎｇＬＩＮＹｕｅｍｉｎｇＺＨＯＵＳｈａｎｙｕＨＵＯＹｕｎｓｈｅｎｇＷＡＮＧＹｕｚｈｕ（ＬａｂｏｒａｔｏｒｙｆｏｒＱ...     

Optical Recording Performance of In_（47）Sb_（14）Te_（39）Phase Change Thin Films using 514．5nm Wavelength Laser Beam

ＯｐｔｉｃａｌＲｅｃｏｒｄｉｎｇＰｅｒｆｏｒｍａｎｃｅｏｆＩｎ_（４７）Ｓｂ_（１４）Ｔｅ_（３９）ＰｈａｓｅＣｈａｎｇｅＴｈｉｎＦｉｌｍｓｕｓｉｎｇ５１４．５ｎｍＷａｖｅｌｅｎｇｔｈＬａｓｅｒＢｅａｍ￥ＭＥＮＬｉｑｉｕ；ＪＩＡＮＧＦｕｓｏｎｇ；ＧＡＮ?..     

Violet Band Excimer Emission of Zn_2 Excited by Relativistic Electron Beam

ＶｉｏｌｅｔＢａｎｄＥｘｃｉｍｅｒＥｍｉｓｉｏｎｏｆＺｎ２ＥｘｃｉｔｅｄｂｙＲｅｌａｔｉｖｉｓｔｉｃＥｌｅｃｔｒｏｎＢｅａｍＸＩＮＧＤａ１）ＷＡＮＧＱｉ２）ＴＡＮＳｈｉｃｉ１）Ｋｅｎ－ｉｃｈｉＵｅｄａ３）（１）ＩｎｓｔｉｔｕｔｅｏｆＬａｓｅｒＬｉｆ...     

The Design of the Black Patch

Ｔｈｅ　Ｄｅｓｉｇｎ　ｏｆ　ｔｈｅ　Ｂｌａｃｋ　ＰａｔｃｈＴｈｅＤｅｓｉｇｎｏｆｔｈｅＢｌａｃｋＰａｔｃｈ￥ＧＡＯＷａｎｒｏｎｇ；ＺＨＡＮＧＸｉｎｇｚｈｅｎ；ＰＡＮＬａｉｊｉｕ；ＷＡＮＧＪｉａｎｇａｎｇ（ＳｐａｃｅＯｐｔｉｃｓＤｅｐａｒｔｍｅｎｔ，Ｘ...     

Upconversion Fluorescence of Er_2O_3 Doped BaF_2-TeO_2 and PbF_1-TeO_2 Oxyhalide Tellurite Glasses

ＵｐｃｏｎｖｅｒｓｉｏｎＦｌｕｏｒｅｓｃｅｎｃｅｏｆＥｒ_２Ｏ_３ＤｏｐｅｄＢａＦ_２－ＴｅＯ_２ａｎｄＰｂＦ_１－ＴｅＯ_２ＯｘｙｈａｌｉｄｅＴｅｌｌｕｒｉｔｅＧｌａｓｓｅｓ￥ＨＵＬｉｎ；ＪＩＡＮＧＺｈｏｎｇｈｏｎｇ；ＨＵＷｅｎｔａｏ；ＳＯＮＧＸｉｕｙｕ...     

810-nm InGaA1As/A1GaAs double quantum well semiconductor lasers with asymmetric waveguide structures

The 810-nm InGaA1As/A1GaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.     

2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and high power conversion efficiency at continuous-wave operation mode. The threshold current density of the device is as low as 92 A/cm². The internal loss coefficient and the internal quantum efficiency are 1.0 cm^?1 and 86.1%, respectively. The 35% maximum power conversion efficiency (PCE) and narrow far-field patterned were achieved.     

High power efficiency in single layer blue phosphorescent organic light-emitting diodes

High efficiency single layer blue phosphorescent organic light-emitting diodes (PHOLEDs) without any charge transport layer were developed. A mixed host of spirobifluorene based phosphine oxide (SPPO13) and 1, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) was used as the host in the emitting layer. A high maximum external quantum efficiency of 15.8% and a quantum efficiency of 8.6% at 1000 cd/m² were achieved in the single-layer blue PHOLEDs without any charge transport layer. The maximum power efficiency and power efficiency at 1000 cd/m² were 31.4 and 16.9 lm/W, respectively.     

808nm无铝大功率量子阱激光器

报导了用低压(LP)-MOCVD方法研制出808nm无铝InGaAsP/InGaP/GaAs单量子阱分别限制异质结构大功率激光器(SCHSQW),器件外微分量子效率为65%,阈值电流密度400A/cm2,特征温度120℃,对于100μm条宽、1000μm腔长宽接触激光器,室温连续输出光功率达1瓦以上,并讨论了无铝大功率激光器的阈值、光谱等特性.     

一种基于环金属铱配合物的高效绿色聚合物电致发光器件

以2-苯基吡啶为主配体,3-乙酰基樟脑为辅助配体合成了一种新型的具有大空间位阻的环金属铱配合物Ir[(PPy)2(acam)],对它的化学结构和光物理性质进行了表征.以环金属铱配合物Ir[(PPy)2(acac)]的发光效率(0.34)为参照物,配合物在2-甲基四氢呋喃溶液中的光致发光效率为0.54,表明在配合物中引入...     

利用梯度掺杂获得高量子效率的GaAs光电阴极

获得高量子效率且稳定性良好的阴极一直是近年来发展GaAs光电阴极的重要方向。对晶面为(100),掺杂Be,厚度为1μm分子束外延生长的反射式GaAs发射层,设计了一种从体内到表面掺杂浓度由高到低分布的新型梯度掺杂结构。掺杂浓度的范围从1×1019cm-3到1×1018cm-3,并利用(Cs,O)激活技术制备了GaAs光电阴极。光谱响应测试曲线显示,与传统均匀掺杂的GaAs光电阴极相比,梯度掺杂的GaAs光电阴极的量子效率在整个波段都有提高,积分灵敏度可达1580μA/lm,且具有更好的稳定性。讨论了这种新型GaAs光电阴极获得更高量子效率的内在机理。该设计结构是现实可行的,且具有很大发展潜力,它为国内发展高性能GaAs光电阴极提供了一条重要途径。     

Er3+-Yb3+共掺磷酸盐玻璃放大器的大信号增益与量子效率理论分析

研究大信号工作状态下的Er^3 -Yb^3 共掺磷酸盐玻璃波导放大器的增益与量子转换效率。从量子转换效率的定义出发，得出了增益、抽运光功率以及量子转换效率三者之间关系的解析表达式。通过数值求解大信号工作状态下的Er^3 -Yb^3 共掺系统的速率方程与光功率传输方程，讨论了Er^3 浓度、Yb^3 浓度、Yb^3 与Er^3 浓度比率、抽运光功率以及放大器长度等因素对量子转换效率的影响。结果表明提高Er^3 浓度与增加放大器长度均有助于提高量子转换效率，高Er^3 浓度掺杂需要相应的高Yb^3 浓度与之相匹配以减小由于高浓度Er^3 掺杂引起的上转换效应，Yb^3 浓度的提高将降低器件的量子转换效率，Yb^3 -Er^3 浓度之比取1～2较好。     

2018年5期 电子期刊

研究了不同Mn/Pb量比的Mn掺杂CsPbCl₃（Mn：CsPbCl₃）钙钛矿量子点的发光性质。Mn/Pb的量比增加引起的Mn²⁺发光峰的红移,被认为是来源于高浓度Mn²⁺掺杂下的Mn²⁺-Mn²⁺对。进一步研究了Mn：CsPbCl₃量子点的发光效率与Mn/Pb的量比之间的关系,发现随着量比达到5：1时,其发光效率明显下降。这种发光效率下降是由于Mn掺杂浓度引起的发光猝灭。Mn：CsPbCl₃量子点的变温发光光谱证实,随着温度的升高,Mn离子发光峰蓝移,线宽加宽,但其发光强度明显增加。     

混合量子点QLED结构性能研究

为研究基于混合量子点的QLED结构与性能,利用红光量子点以及绿光量子点两种材料制备了橙光QLED器件,并对其性能进行了表征。实验制备的器件结构为ITO/PEDOT∶PSS/poly-TPD/混合QDs/Zn O/Al,其中发光层采用了3种混合量子点的混合结构方案。方案一先旋涂红光量子点层,后旋涂绿光量子点层;方案二先旋涂绿光量子点层,后旋涂红光量子点层;方案三将红光、绿光量子点1∶1混合后制备为发光层。实验结果表明:方案一制备的器件电流密度最大,发光亮度最低,且只有红光谱;方案二制备的器件具有最小的电流密度,同时具有红、绿光谱,在8 V电压下,电流效率约为4.69 cd/A;方案三制备的器件同时具有红、绿光谱,电流密度与发光特性介于方案一与方案二之间。实测数据与理论分析是一致的,方案二制备的器件存在双能量陷阱,能够将注入的空穴以及电子同时限制在红光量子点层内。通过调节各功能层厚度使得载流子注入平衡,可进一步增大发光电流,提高器件效率。     

基于mCP与UGH2为母体的双发光层高效率蓝色磷光OLED

以9,9'-(1,3-苯基)二-9H-咔唑(m CP)和1,4-二(三苯甲硅烷基)苯(UGH2)为母体,将常用的蓝光染料二(3,5-二氟-2-(2-吡啶)苯基-(2-吡啶甲酸根))合铱(Ⅲ)(FIrpic)掺入这两种母体材料中,制得具有双发光层结构的蓝色磷光有机电致发光器件,并对整个物理机制进行了阐述。该器件较基于m CP或UGH2为母体的单发光层器件有着更高的器件效率。器件的最大电流效率、功率效率、外量子效率分别为21.13 cd/A、14.97 lm/W、10.56%。器件亮度从100 cd/m2到3 000 cd/m2时,效率滚降为34.2%。