Raman scattering and optical absorption in S2N2 and partially polymerized S2N2 films

Raman scattering and optical absorption measurements between 0.5 and 5.0 eV on crystalline films of S₂N₂ and partly polymerized S₂N₂ have been made for the first time. The Raman active molecular and librational phonons have been observed and assigned. The Raman spectra of partly polymerized S₂N₂ show the appearance of weak scattering at 635 cm⁻¹ and appreciable broadening of the librational phonon peaks. Optical absorption maxima occur at 4.0 and 4.7 eV in pure S₂N₂ at 14 K, while absorptions at 0.86, 1.1 and 4 eV evolve with increasing polymerization.     

C+注入a-SiNx：H薄膜的微结构及光发射的研究

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiN_x:H薄膜进行低能量高剂量的C⁺注入后,在800~1200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiC_xN_y转变成SiN_x和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiN_x、SiC_xN_y、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH

The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp³ s^* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε₂ (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε₂(ω) spectrum. The two components of the ε₂(ω) (i. e. ε_2xy(ω) and ε_2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.     

第一性原理研究O和S掺杂的石墨相氮化碳(g-C_3N_4)_6量子点电子结构和光吸收性质

利用密度泛函和含时密度泛函理论研究了氧(O)和硫(S)原子掺杂的石墨相氮化碳(g-C_3N_4)_6量子点的几何、电子结构和紫外-可见光吸收性质.结果表明:掺杂后(g-C_3N_4)_6量子点杂质原子周围的C-N键长发生了一定的改变,最高电子占据分子轨道-最低电子未占据分子轨道(HOMO-LUMO)能隙显著减小.形成能的计算表明O原子取代掺杂的(g-C_3N_4)_6量子点体系更稳定,且O原子更易取代N3位点,而S原子更易取代N8位点.模拟的紫外-可见电子吸收光谱表明,O和S原子的掺杂改善了(g-C_3N_4)_6量子点的光吸收,使其吸收范围覆盖了整个可见光区域,甚至扩展到了红外区.而且适当的杂质浓度使(g-C_3N_4)_6量子点光吸收在强度和范围上都得到明显改善.通过O和S掺杂的比较,发现二者在可见光区对(g-C_3N_4)_6量子点的光吸收有相似的影响,然而在长波长区域二者的影响有明显差异.总体而言,O掺杂要优于S掺杂对(g-C_3N_4)_6量子点光吸收的影响.     

柔性Pb(Zr_(0.53)Ti_(0.47))O_3薄膜的高温铁电特性

随着柔性电子产品的迅速发展,具有优异铁电和压电性的Pb(Zr_(0.53)Ti_(0.47))O_3 (PZT)薄膜在柔性的非易失性存储器、传感器和制动器等器件中有广泛的应用前景.同时,由于外部环境越来越复杂,具有高温稳定特性的材料和器件受到越来越多的关注.本文在耐高温的二维层状氟晶云母衬底上,用脉冲激光沉积技术制备出外延的PZT薄膜,并通过机械剥离的方法,得到柔性的外延PZT薄膜.研究了Pt/PZT/SRO异质结的铁电和压电性及其高温特性,发现样品表现出优越的铁电性,剩余极化强度(P_r)高达65μC/cm~2,在弯曲104次后其铁电性基本保持不变,且样品在275℃高温时仍然保持良好的铁电性.本文为柔性PZT薄膜在航空航天器件中的应用提供了实验基础.     

First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb₂Se₃ crystal. When one and two N atoms are introduced into the Sb₂Se₃ lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb₂Se₃ from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants ε1(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb₂Se₃is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.     

Alkali-metal(Li,Na, and K)-adsorbed MoSi2N4 monolayer: an investigation of its outstanding electronic,optical, and photocatalytic properties

Single-layer MoSi₂N₄,a high-quality two-dimensional material,has recently been fabricated by chemical vapor deposition.Motivated by this latest experimental work,herein,we apply first principles calculations to investigate the electronic,optical,and photocatalytic properties of alkali-metal(Li,Na,and K)-adsorbed MoSi₂N₄ monolayer.The electronic structure analysis shows that pristine MoSi₂N₄ monolayer exhibits an indirect bandgap(E_g=1.89 eV).By contrast,the bandgaps of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.73 eV,1.61 eV,and 1.75 eV,respectively.Moreover,the work function of MoSi₂N₄ monolayer(4.80 eV)is significantly reduced after the adsorption of alkali metal atoms.The work functions of one Li-,Na-,and K-adsorbed MoSi₂N₄ monolayer are 1.50 eV,1.43 eV,and 2.03 eV,respectively.Then,optical investigations indicate that alkali metal adsorption processes substantially increase the visible light absorption range and coefficient of MoSi₂N₄ monolayer.Furthermore,based on redox potential variations after alkali metals are adsorbed,Li-and Na-adsorbed MoSi₂N₄ monolayers are more suitable for the water splitting photocatalytic process,and the Li-adsorbed case shows the highest potential application for CO₂ reduction.In conclusion,alkali-metal-adsorbed MoSi₂N₄ monolayer exhibits promising applications as novel optoelectronic devices and photocatalytic materials due to its unique physical and chemical properties.     

INVESTIGATIONS ABOUT THE DYNAMICAL ELECTRON SCATTERING BY A HEXAGON-PRISM β-Si3N4 WHISKER

The dynamical electron scattering effects by a hexagon-prism β-Si₃N₄ whisker were investigated. The 002 dark field images of the wedges of the whisker along [110] direction showed sinusoidal fringes, in which there existed great differences in fringe period under two- and N-beam conditions. Fine structures of the corresponding diffraction spots under two-beam condition were also very different from those under many-beam condition. Such dynamical scattering effects were analyzed quantitatively.     

Chemically prepared oxides on Si(001): an XPS study

Thin oxide layers prepared on Si(001) by various chemical treatments have been investigated using X-ray photoelectron spectroscopy. The oxides are prepared by treatment with HCl, H₂SO₄ and HNO₃. The O 1s spectra consists of two peaks at 532.6 eV (low binding energy component, LBC) and 533.6 eV (high binding energy component, HBC) in all the cases. The LBC is assigned to a monatomic bridging oxygen, Si---O---Si and HBC to a monatomic non-bridging oxygen, Si---O species. Conversion of Si---O to Si---O---Si takes place on annealing the sample. The concentration of Si---O species is low in the case of HCl oxide. In in situ prepared oxide, the O 1s is predominantly due to Si---O---Si.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Analytical electron microscopy of a reaction-bonded Si3N4-based ceramic containing oxide additions

The microstructure of a silicon nitride (Si₃N₄)-based ceramic, prepared by a process combining direct nitridation and reactive liquid phase sintering of silicon/ceramic oxide powder compacts, has been characterised using analytical transmission electron microscopy. The presence of the reactive liquid phase, promoted by the addition of oxides from the CaO-Al₂O₃-SiO₂ ternary system, resulted in an as-fired microstructure containing a mixture of crystalline phases based on -Si₃N₄, β-Si₃N₄ and Si₂ N₂O, and distinct amorphous regions rich in Si, Al and Ca. X-ray microanalysis revealed the calcium to be wholly partitioned to the glassy phase, while significant concentrations of aluminium were detected in both β-Si₃N₄ and Si₂N₂O. The observed compositions of these phases, together with measured lattice parameters systematically in excess of those of the pure compounds, imply that they are in fact β- and O-sialons respectively. Semi-quantitative energy dispersive X-ray spectroscopy, using an ultra-thin window detector, is demonstrated to be capable of distinguishing clearly between these phases according to their oxygen content and of determining the aluminium content of both phases to within ± 1 equ.%, even at concentration levels of <5 equ.%.     

Mechanical,elastic, anisotropy,and electronic properties of monoclinic phase of m-Si_xGe_(3-x)N_4

The structural,mechanical,elastic anisotropic,and electronic properties of the monoclinic phase of m-Si_3N_4,mSi_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4are systematically investigated in this work.The calculated results of lattice parameters,elastic constants and elastic moduli of m-Si_3N_4and m-Ge_3N_4are in good agreement with previous theoretical results.Using the Voigt–Reuss–Hill method,elastic properties such as bulk modulus B and shear modulus G are investigated.The calculated ratio of B/G and Poisson’s ratio v show that only m-SiGe_2N_4should belong to a ductile material in nature.In addition,m-SiGe_2N_4possesses the largest anisotropic shear modulus,Young’s modulus,Poisson’s ratio,and percentage of elastic anisotropies for bulk modulus ABand shear modulus AG,and universal anisotropic index AUamong m-Si_xGe_(3-x)N_4(x=0,1,2,3.)The results of electronic band gap reveal that m-Si_3N_4,m-Si_2GeN_4,m-SiGe_2N_4,and m-Ge_3N_4 are all direct and wide band gap semiconducting materials.     

Transition metal anchored on C9N4 as a single-atom catalyst for CO2 hydrogenation: A first-principles study

To alleviate the greenhouse effect and maintain the sustainable development, it is of great significance to find an efficient and low-cost catalyst to reduce carbon dioxide (CO₂) and generate formic acid (FA). In this work, based on the first-principles calculation, the catalytic performance of a single transition metal (TM) (TM = Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Cd, Ir, Pt, Au, or Hg) atom anchored on C₉N₄ monolayer (TM@C₉N₄) for the hydrogenation of CO₂ to FA is calculated. The results show that single TM atom doping in C₉N₄ can form a stable TM@C₉N₄ structure, and Cu@C₉N₄ and Co@C₉N₄ show better catalytic performance in the process of CO₂ hydrogenation to FA (the corresponding maximum energy barriers are 0.41 eV and 0.43 eV, respectively). The partial density of states (PDOS), projected crystal orbital Hamilton population (pCOHP), difference charge density analysis and Bader charge analysis demonstrate that the TM atom plays an important role in the reaction. The strong interaction between the 3d orbitals of the TM atom and the non-bonding orbitals (1π_g) of CO₂ allows the reaction to proceed under mild conditions. In general, our results show that Cu@C₉N₄ and Co@C₉N₄ are a promising single-atom catalyst and can be used as the non-precious metals electrocatalyst for CO₂ hydrogenation to formic acid.     

Hf-N体系的晶体结构预测和性质的第一性原理研究

为了寻找具有优异力学性能的新型超高温陶瓷材料, 结合进化算法和第一性原理, 系统研究了Hf-N二元体系所有稳定存在的化合物及其晶体结构. 除了实验已知的岩盐结构的HfN之外, 本文还找到了Hf₆N(R-3), Hf₃N(P6₃22), Hf₃N₂(R-3m), Hf₅N₆(C2/m)和Hf₃N₄(C2/m)五种新结构, 基于准简谐近似原理计算了这些稳定结构的声子谱以验证其动力学稳定性, 常温甚至更高温度下的吉布斯自由能以验证其高温热力学稳定性. 结果表明, 这些结构是动力学稳定的, 且在1500 K以下都是热力学稳定的. 同时, 本文还列出了在搜索过程中出现的空间对称性较高、能量较低的亚稳态结构, 包括Hf₂N(P4₂/mnm), Hf₄N₃(C2/m), Hf₆N₅(C2/m), Hf₄N₅(I4/m), Hf₃N₄(I-43d)和Hf₃N₄(Pnma). 之后计算了上述所有结构的力学性质(弹性常数、体模量、 剪切模量、 杨氏模量、硬度), 随着N 所占比例的增加, 硬度呈现的整体趋势是先增大后下降, 在Hf₅N₆处取得最大值, 为21 GPa. 其中Hf₃N₂和Hf₄N₅也展现出了较高的硬度, 都为19 GPa. 最后, 计算了这些结构的电子态密度和晶体轨道汉密尔顿分布, 从电子结构的角度分析了力学性能的成因. 研究结果显示, 较强的Hf-N共价键和较低的结构空位率是Hf₅N₆具有优异力学性能的主要原因.     

RAMAN SCATTERING OF α-ET3(ReO4)2 CHARGE-TRANSFER SALT

We describe the results of Haman studies on C=C stretch modes in α-ET₃(ReO₄)₂ charge-transfer salt with the incident laser beam polarised perpendicular and parallel to the large flat face of plate-like crystal. We have assigned central C=C stretch mode at 1454 cm^-1 and ring C=C stretch mode at 1470cm^-1. The change in ring C=C stretch vibration was observed at the metal-insulator transition of α-ET₃(ReO₄)₂ on warming due to the distortion of the ET molecules.     

Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors

Vanadium oxide films with temperature coefficient of resistant of −2.6% K⁻¹ have been fabricated on Si₃N₄-film-coated Si substrates by ion beam sputtering in a controlled Ar/O₂ atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VO_x film is a metastable phase of vanadium dioxide (VO₂(B)) and the VO₂(B) film can be transformed into VO₂ film by post-growth annealing at 450 °C in flowing Ar atmosphere.     

A study of atomic iodine and molecular thallium iodide by X-ray photoelectron and auger electron spectroscopy

The I3d5/2 binding energy has been measured in atomic iodine, thallium iodide and cesium iodide by high temperature gas-phase photoelectron spectrscopy using Al K (1486.6 eV) X-rays. The iodine M₅N_4,5N_4,5 (¹G₄) Auger energies for TlI and CsI have also been measured and combined with binding energies to yield extra-atomic relaxation energies of 0.5 and O.3 eV, respectively, after corrections are applied to the Auger parameter. Charges were calculated using the simple potential model, which was also used to obtain an estimate of the atomic T14f binding energy. Two other estimates of the atomic T14f7/2 binding energy have also been calculated, both based on Dirac-Fock ΔSCF binding energies. The results of the three methods suggest a value of 125.3 ± 0.2 eV for T14f7/2.     

Spectroscopic characterization of TiCx films produced by pulsed laser deposition in CH4 environments

Titanium carbide (TiC_x) thin films were grown on (1 0 0)-Si substrates by a pulsed laser deposition (PLD) method using a Ti target in methane gas. The films are characterized in situ by Auger (AES), electron energy loss (EELS) and X-ray photoelectron spectroscopies (XPS). It was found that the reaction between the ablated Ti species and CH₄ in the plasma plume influenced the C:Ti ratio. XPS numerical fitting for the C 1s transition revealed three Gaussians components. The main component, binding energy of 282.8 eV, is assigned to C making bonds with Ti, like in stoichiometric TiC. The second component, binding energy of 284.9 eV, is assigned to C---C bonds. A third component is found for films deposited at pressures higher than 25 mTorr at 286.5 eV. A post-deposition thermal treatment demonstrates that the Ti---C and C---C peaks are very stable, whereas, the third peak tends to decrease for temperatures higher than 200 °C. It is assumed that this last component is due to carbonyl complexes remnant in films. Finally, it can be concluded that the titanium carbide films processed by PLD is a chemically inhomogeneous material; mostly composed of sub-stoichiometric TiC and particulates of segregated carbon.     

Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering

Copper oxides films (Cu₂O, Cu₄O₃ and CuO) have been deposited by magnetron sputtering of a copper target in various Ar–O₂ reactive mixtures. The films are characterized by X-ray diffraction, scanning electron microscopy, four-point probe method and UV-Vis spectrometry. The three defined compounds in the Cu---O binary system can be deposited by varying the oxygen flow rate introduced into the reactor. All the films are crystallized with a mean crystal size ranging from 10 to about 35 nm. They are highly resistive and present a direct optical band gap higher than 2 eV. The application of a bias voltage during the deposition phase modifies the texture of the Cu₂O films and also induces a preferential resputtering of oxygen from the Cu₄O₃ ones. This resputtering phenomenon leads firstly to the occurrence of the cuprite phase mixed with the paramelaconite one and secondly to the amorphisation of the films. Finally, the thermal stability in air of cuprite, paramelaconite and tenorite films has been investigated. The results show that the stability of Cu₂O and Cu₄O₃ films in air is influenced by the thickness and/or the texture of the films. Tenorite films with a low optical band gap (1.71 eV) can be formed after air annealing at 350 °C of an unbiased cuprite film.