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1.
Comparison between the excitation spectra of luminescence (ESL) of the 0.57 eV band (typical of p or SI materials) and of the 0.62 eV band (typical of n samples) with the photoionization cross-sections σ0n(hv) and σ0p(hv) of the chronium level leads us to attribute unambiguously these luminescence transitions to the (Cr3+?Cr2+) center in chromium doped GaAs.  相似文献   

2.
He II-ultraviolet photoelectron spectra (hv = 40.8 eV) from a carbon monoxide layer adsorbed on a Cu(111) surface exhibit two peaks at 8.5 and 11.6 eV below the Fermi level and a weaker maximum centered at about 13.5 eV. The emission from the Cu d-band is markedly suppressed after adsorption. The results are discussed in terms of the recent models for assigning the UPS peaks observed after adsorption of CO on transtion metals  相似文献   

3.
Ultraviolet photoemission spectroscopy with hv < 12 eV has been used to study O2, CO, and H2 adsorption on the cleaved GaAs(110) face. It was found that O2 exposures above 105 L(1LM = 10?6 Torr sec) were required to produce changes in the energy distribution curves. At O2 exposures of 106 L on p-type and 108 L on n-type an oxide peak is observed in the EDC's located 4 eV below the valence band maximum. On p-type GaAs, O2 exposures cause the Fermi level at the surface to move up to a point 0.5 eV above the valence band maximum, while on n-type GaAs O2 exposures do not remove the Fermi level pinning caused by empty surface states on the clean GaAs. CO was found to stick to GaAs, but to desorb over a period of hours, and not to change the surface Fermi level position. H2 did not affect the EDC's, but atomic H lowered the electron affinity and raised the surface position of the Fermi level on p-type GaAs. A correlation is found in which gases which stick to the GaAs cause an upward movement of the Fermi level at the surface on p-type GaAs, while gases which stick only temporarily do not change the surface position of the Fermi level.  相似文献   

4.
C2H4在Ru(1010)表面吸附与分解的研究   总被引:2,自引:0,他引:2       下载免费PDF全文
用X射线电子能谱(XPS)、热脱附谱(TDS)和紫外光电子能谱(UPS)方法研究了乙烯(C2H4)在Ru(1010)表面的吸附,在低温下(200K以下)乙稀(C24)可以在Ru(1010)表面上以分子状态稳定吸附,在200K以上乙烯(C2H 4)则发生了脱氢分解反应.TDS结果表明乙烯(C2H4)分 解后的主要产物为乙炔(C< 关键词: 乙烯 钌(1010)表面 吸附与分解  相似文献   

5.
Exposure of a Ni(111) surface to oxygen leads at first to the formation of a chemisorbed overlayer which is characterized by a 2 × 2-superstructure and a maximum in the photoemission spectrum (hv = 40.8 eV) centered at 5.6 eV below the Fermi level EF. The emission from the Ni d-states is nearly unaffected at this stage of interaction. After high oxygen exposures the epitaxial growth of NiO can be identified from the LEED pattern. The corresponding photoelectron spectrum is strongly altered and exhibits close agreement with the transition energies as calculated by Messmer et al. for a NiO610- -cluster.  相似文献   

6.
The optical cross-section σn0(hv) and σp0(hv) associated with the (Fe3+ ? Fe2+) deep level have been measured by Deep Level Optical Spectroscopy in n-type Fe doped samples of InP. Optical transitions are interpreted as transitions from the Fe2+ ground state to the Γ and L point minima of the conduction band for σn0(hv) and from the valence band to the ground and excited state for Fe2+ for σp(hv). A theoretical model which accounts for the main features of the experimental data is proposed.  相似文献   

7.
The interaction of water vapour with clean as well as with oxygen precovered Ni(110) surfaces was studied at 150 and 273 K, using UPS, ΔΦ, TDS, and ELS. The He(I) (He(II)) excited UPS indicate a molecular adsorption of H2O on Ni(110) at 150 K, showing three water-induced peaks at 6.5, 9.5 and 12.2 eV below EF (6.8, 9.4 and 12.7 eV below EF). The dramatic decrease of the Ni d-band intensity at higher exposures, as well as the course of the work function change, demonstrates the formation of H2O multilayers (ice). The observed energy shift of all water-induced UPS peaks relative to the Fermi level (ΔEmax = 1.5 eVat 200 L) with increasing coverage is related to extra-atomic relaxation effects. The activation energies of desorption were estimated as 14.9 and 17.3 kcal/mole. From the ELS measurements we conclude a great sensitivity of H2O for electron beam induced dissociation. At 273 K water adsorbs on Ni(110) only in the presence of oxygen, with two peaks at 5.7 and 9.3 eV below EF (He(II)), being interpreted as due to hydroxyl species (OH)δ? on the surface. A kinetic model for the H2O adsorption on oxygen precovered Ni(110) surfaces is proposed, and verified by a simple Monte Carlo calculation leading to the same dependence of the maximum amount of adsorbed H2O on the oxygen precoverage as revealed by work function measurements. On heating, some of the (OH)δ? recombines and desorbs as H2O at ? 320 K, leaving behind an oxygen covered Ni surface.  相似文献   

8.
《Surface science》1993,281(3):L341-L346
The adsorption of ethylene oxide on Ni(110) was studied at 95 K and monolayer coverage by angle-resolved X-ray photoelectron spectroscopy. A slow radiation-induced decomposition at hv = 1486.7 eV to most likely methoxy was noted. The orientation of the adsorbed ethylene oxide was determined by measuring forward scattering enhancements in the O 1s intensity distribution. Peaks in polar (θ) as well as azimuthal (φ) scans occurred at four angular positions in 2π above the surface: (θ = 54°, φ = 36°, 144°, 216°, 324°). These positions were evaluated to yield the tilt angle of the molecule at 48°_relative to normal, and the COC bond angle of adsorbed C2H4O of about 57°. The molecule is tilted towards the [001] and [001&#x0304;] directions (two domains), with a mirror plane in the [001] azimuth.  相似文献   

9.
The density of states distribution in the valence and conduction band was determined for Cd1?xMnxF2 crystals (x = 0; 0.02 and 0.1) on the basis of the EDCs obtained for hv = 21.2 eV and hv = 40.8 eV. The smooth changes of the shape of EDCs were obtained for different alloy compositions for hv = 40.8 eV while for the hv = 21.2 eV EDCs drastic changes occur due to the structure of the final density of states. The peaks of density of states obtained for CdF2 valence band in X5, L2,1 and X5, points and conduction band in X1 and L1 points of the B.Z. changes with the increase of x in Cd1?xMnxF2 alloy.  相似文献   

10.
The temperature dependence of five edge emission lines of GaSe at high excitation levels has been investigated by using the second harmonic of a neodymium-glass laser. The following lines were indentified at 77.3K:hvB = 2.102 ± 0.002 eV, annihilation of free excitons; hvC = 2.082 ± 0.003 eV, Auger recombination of free excitons; hvD = 2.072 ± 0.003 eV and hvE = 2.055 ± 0.004 eV, annihilation of free excitons with emission of optical phonons (LO1 = 31 meVandLO2 = 45 meV, respectively); hvG = 2.036 ± 0.004 eV, radiative recombination at indirect transition with emission of LO1 phonons.  相似文献   

11.
We have used uv photoeinission (primarily at a photon energy hv = 40.8 eV) to study chemisorption and decomposition reactions of small oxygen-containing organic molecules on clean polycrystalline Pd surfaces at 120 and 300 K. These molecules include methanol (CH3OH), dimethyl ether (CH3OCH3) formaldehyde (H2CO), acetaldehyde [H(CH3)CO], and acetone [(CH3)2CO]. Chemisorption bonding of these molecules to the Pd surface occurs primarily through the lone-pair orbitais associated with the oxygen atoms, as evidenced by chemical bonding shifts of these orbitais toward larger electron binding energy relative to the other adsorbate valence orbitals. At 300 K all the molecules studied decompose on the surface, resulting in chemisorbed CO. Since chemisorbed (as well as condensed) phases of some of these molecules (CH3OH and H(CH3)CO) are observed at low temperature, the decomposition to CO is a thermally-activated reaction. The observed orbital shifts associated with chemisorption bonding are used to make rough estimates of interaction strengths and chemisorption bond energies (within the framework of Mulliken's theory of electron donor-acceptor complexes as applied to chemisorption by Grimley). The resulting heats of chemisorption are consistent with the observed surface reactions.  相似文献   

12.
The properties of silver-silicon interfaces formed by cleaving n-type silicon in ultra high vacuum (UHV) in a stream of evaporating silver atoms were studied. The barrier heights of these contacts were measured at different temperatures by using C-V techniques. All measurements were performed in UHV. The dependence of the barrier height upon temperature did not follow the temperature dependence of the Si band gap as it is usually found. The measured temperature behavior depended on the roughness of the Si surface. The temperature behavior can be explained by assuming a specific band structure of the interface states. For Ag contacts on atomically smooth n-type Si, the interface states were found to be arranged in two bands, one band 4 × 10?3 eV wide with acceptor type states 0.18 eV below the intrinsic level Ei and a density of 1017 states/cm2 eV, and the other 1 eV wide with donor type states with its upper edge 0.28 eV below Ei, and a density of 4 × 1014 states/cm2eV.  相似文献   

13.
The adsorption of N2, NH3, NO, and N2O onto clean polycrystalline dysprosium at 300 and 115 K and the changes undergone by the adsorbed species upon heating from 115 K have been investigated using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). At 115 K, N2 adsorbs dissociatively, vielding two peaks in the N 1s region at 396.2 and 398.2 eV corresponding respectively to a nitride and to chemisorbed nitrogen N(a). No peaks corresponding to molecularly adsorbed N2 (BE 400.2 eV [10]) were observed. Upon heating the sample the N(a) is converted into the nitride species, as evidenced by a decrease in the 398.2 eV peak and a corresponding increase in the 396.2 eV peak. At a warm-up temperature of 300 K, the N(a) species accounts for only ~10% of the total nitrogen on the surface. Ammonia adsorbed at 115 K shows three distinct peaks, at 401.7, 399.3 and 396.2 eV, corresponding to molecular, partly dissociated, and completely dissociated (nitride) ammonia. Upon heating multilayer ammonia to 175 K, it desorbs to leave predominantly the peak corresponding to the partly dissociated species. Upon further heating the molecular and partly dissociated ammonia is converted into the nitride species. At 400 K only nitride-type nitrogen remains on the surface. The adsorption of NO and N2O at 115 K is predominantly dissociative. NO has N 1s peaks at 403.1 and 396.3 eV corresponding possibly to molecularly adsorbed NO, and to nitride species. After N2O adsorption there is very little nitrogen on the surface. Adsorption of N2 and NO at 300 K yields only the peak at 396.2 eV, whereas NH3 yields, in addition to this peak, a small intensity (~20%) of the peak at 398.2 eV (partly dissociated ammonia).  相似文献   

14.
We determined the optical constants below the absorption edge of amorphous films of Si1?xAux (x between 0.07 and 0.30) prepared by getter sputtering in argon. In the range 0.15 to 0.5 eV we found that the absorption increased with increasing Au content and could be described by Mott's formula for a.c. conductivity σ(ω) ≈ ω2[In (I0/ω)]4 with I0 ? 4.5 eV at x = 0.11 and 3.8 eV at x = 0.29; in the range 10–100 K it changed only slightly with temperature. The absorption is interpreted as due to direct transitions involving Au atoms.  相似文献   

15.
Ultraviolet photoemission spectroscopy using hv = 21.2 eV and filtered 40.8 eV radiation as well as temperature programmed thermal desorption spectroscopy are used to investigate the chemical reaction of acetylene with Ni(100) and Ni(110) surfaces at room temperature. Striking crystallographic effects and several coexisting phases are observed and found to be coverage and temperature dependent. A methodology is described and used to predict the relative energy levels for a variety of adsorbed hydrocarbon fragments on Ni surfaces. Such levels together with the thermal desorption spectra are used to identify the observed species. In particular, CH and CCH species are isolated on Ni(100) and Ni(110) surfaces, respectively, via low temperature adsorption and subsequent pulsed sample warming experiments. The room temperature adsorption phases are deduced using these ionization levels together with those of chemisorbcd acetylene, atomic hydrogen and carbon. At room temperature on Ni(100), H, C, CH and C2H2 species form together below 2 L exposure while CH species form thereafter, up to a saturation exposure of ~10 L. On Ni(110), H and CCH species form below 1.5 L exposure followed by the formation of CH2 and likely CH species. The relative stabilities of these species at elevated temperatures is: C2H2 < CCH ? CH < CH2. A model for the bonding of acetylene and its reaction to form CCH species on Ni(110) is proposed.  相似文献   

16.
Photons and electrons are emitted when Cl2 molecules react on a Na surface prepared by UHV evaporation. The emission yield per reacting molecule is 10?7-10?6 for photons and approximately 10?5 for electrons. The dominating light emission band has a maximum at hv = 2.15 eV (width 0.6 eV). A less intense u.v. band has a maximum at about 4.7 eV. A drastic decrease in the photon and electron emission at a Cl2 exposure of about 5.10?3 torr·sec, is attributed to the formation of a continuous NaCl film on the Na surface.  相似文献   

17.
Surface induced local d-band states in the upper 4d band between ~ 4 and ~ 5.2 eV below EFermi have been identified for polycrystalline silver films in photoemission experiments using synchroton radiation. A thin over-coat (10 å) by an Al film leads to a depression of these surface induced local states whereas a change from s- to p-polarized excitation leads to an enhancement. Deposition of additional silver (~ 3 Å) at 120 K induces additional emission 4.2 eV below EF with a FWHM of only ~ 0.4 eV.  相似文献   

18.
Field evaporation of silver and field desorption of silver surface compounds were investigated by analysing positive ions with a mass spectrometer. In particular, the well known adsorption states of oxygen, and further the interactions of H2O, NH3, H2, CO and CH4 were measured in the field ion mass spectrometer under steady state fields of > 0.1 V/Å with a sensitivity of < 0.1 ions s?1 and at temperatures between 80 °K and 425 °K. Although oxygen is usually chemisorbed at Ag surfaces, no AgO+, AgO+2 or other Ag-O compounds could be detected as positive ions, Ag+ and O2+ are the only observed ions at best image fields in oxygen up to fields of field evaporation of Ag+(≈ 2.2 V/Å). Even after the actual adsorption of oxygen with zero-field (6 × 105 Langmuir at 10?3 Torr) at 323 °K and 473 °K and subsequent application of the desorption field at 210°K no silver-oxygen compounds were found in positive ionic form. Small quantities of AgO+ and AgO+2 were only formed — besides Ag(H2O)x+ complexes — if atomic oxygen was supplied by the field induced dissociation of water.Gases which do not adsorb on silver under zero-field conditions (H2, CO, CH4, N2) yield the ions Ag(H2)n, Ag(CO)n+, n=1, 2; AgCH4+, AgN2+. The situation with H2O and NH3 is more complicated: Molecular ions [Ag(H2O)n]+·mH2O, n=1,…, 4, m=1,…, 8 and [Ag(NH3)n]+·mNH3, n=1, 2, m=1,…, 6 are found besides Ag+.From the temperature and field dependence conclusions are drawn about the mechanisms of evaporation and formation of ionic surface complexes. The activation energies of evaporation of Ag+ are found to depend on the square root of the field strength. In general, the generation of surface compounds can be described by field induced reactions rather than usual gas adsorption.  相似文献   

19.
H2S, H2 and S adsorbed on Ru(110) have been studied by angle-integrated ultraviolet photoemission (UPS) as part of a study of the effect of adsorbed sulfur, a common catalytic poison, on this Ru surface. For low exposures of H2S at 80 K, the work function rises to a value 0.16 eV above that of clean Ru(110) while the associated UPS spectra (hν = 21.2 eV) exhibit features similar to those of H(ads) and S(ads) and different from those of molecular H2S. We conclude that H2S dissociates completely at low coverages on Ru(110) at 80 K. At intermediate exposures the work function drops and the UPS spectra show new features which are attributed to the presence of an adsorbed SH species. This appears to be the first direct observation of this surface complex. At higher exposures the work function saturates at a value 0.36 eV below the clean value; the UPS spectra change markedly and indicate the adsorption of molecular H2S. Heating adsorbed H2S leaves a stable layer of S(ads) on Ru(110). The surface with adsorbed sulfur strongly modifies the adsorption at 80 K of a number of molecules relative to the clean Ru(110) surface.  相似文献   

20.
CH3NC adsorption and thermal decomposition on a Pt(111) surface has been studied by high resolution EEL and TD spectroscopies. At 90 K, CH3NC adsorbs initially in a terminal-bonded configuration characterized by a blue-shifted iso-cyanide stretch at 2265-2240 cm?1. At higher coverages this form co-exists with a second form characterized by an imine-like stretch at 1600–1770 cm?1, increasing with coverage. This form is associated with bridge bonding to adjacent surface platinum atoms. Adsorption is irreversible and. except for multilayer desorption at 135 K, only reaction-limited H2 (Tp = 440–460 K) andHCN (Tp = 420–610 K) desorption and. at high coverages, isomerization to CH3CN (Tp = 430 K) was seen. EEL spectra recorded after heating the adsorbed layer indicated that at lower coverages, the molecular integrity of the adsorbed CH3NC was completely lost before dehydrogenation occurred. On the other hand, at saturation structural changes in the adsorbed layer corresponded firstly to the onset of dehydrogenation and then. at higher temperatures, to HCN evolution. No spectroscopic evidence for an η2-bonding configuration was found either at low temperatures or during thermal decomposition. The terminal- and bridged-bonded configurations adopted by CH3NC have been compared and contrasted with those found with the isoelectronic CO and the isomeric CH3CN by reference to the chemically important frontier orbitals of these ligand molecules.  相似文献   

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