Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process

Palladium (Pd) and cobalt (Co) Schottky barrier diodes were fabricated on n-Ge (1 0 0). The Pd-Schottky contacts were deposited by resistive evaporation while the Co-contacts were deposited by resistive evaporation and electron beam deposition. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on as-deposited and annealed samples. Electrical properties of Pd and Co samples annealed between 30 and 600 °C indicate the formation of one phase of palladium germanide and two phases of cobalt germanide. No defects were observed for the resistively evaporated as-deposited Pd-and Co-Schottky contacts. A hole trap at 0.33 eV above the valence band was observed on the Pd-Schottky contacts after annealing at 300 °C. An electron trap at 0.37 eV below the conduction band and a hole trap at 0.29 eV above the valence band was observed on as-deposited Co-electron beam deposited Schottky contacts. Rutherford back scattering (RBS) technique was also used to characterise the Co-Ge, for as-deposited and annealed samples.     

Intracavity laser absorption spectroscopy of HDO between 12 145 and 13 160 cm

The high resolution absorption spectrum of monodeuterated water, HDO, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 12 145-13 160 cm⁻¹ region. The achieved sensitivity (noise equivalent absorption on the order of α_min ∼ 10⁻⁹ cm⁻¹) allowed detecting transitions with line strengths as weak as 10⁻²⁷ cm/molecule which is about 50 times lower than the weakest line intensities previously detected in the considered region.The rovibrational assignment of the 1179 lines attributed to the HDO isotopologue was based on the results of the variational calculations of Schwenke and Partridge as well as the recent calculations based on a new HDO potential energy surface refined from the fitting to the available experimental data. The overall agreement between these new calculations and the observed spectrum is very good, the rms deviation of the differences between the calculated and observed energy values being 0.05 cm⁻¹. A set of 304 new experimental HDO energy levels was obtained. In particular, band origins for the (1 2 2), (2 0 2), and (3 1 1) vibrational states, at 12 568.190, 12 644.652, and 12 919.938 cm⁻¹, respectively, and their rotational sublevels are derived for the first time. A detailed HDO database of 1337 transitions was constructed and is provided as Supplementary Material.     

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH₃ ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10¹⁰ cm⁻², 2.7 × 10¹¹ cm⁻² eV⁻¹ and 6.4 × 10⁻¹⁵ cm⁻² using charge pumping method.     

Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V_G), the capacitance-voltage C(V_G) measurements were plotted and analysed. The saturation current I_s, the serial resistance R_s and the mean ideality factor n are, respectively, equal to 2.03 × 10⁻⁵ A, 85 Ω, 1.7 under dark and to 3.97 × 10⁻⁵ A, 67 Ω, 1.59 under illumination. The analysis of I(V_G) and C(V_G) characteristics allows us to determine the mean interfacial state density N_ss and the transmission coefficient θ_n equal, respectively, to 4.33 × 10¹² eV⁻¹ cm⁻², 4.08 × 10⁻³ under dark and 3.79 × 10¹² eV⁻¹ cm⁻² and 5.65 × 10⁻³ under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C⁻²(V_G) characteristic.     

The absorption spectrum of water between 13 540 and 14 070 cm: ICLAS detection of weak lines and a complete line list

The absorption spectrum of water vapor has been investigated by Intracavity Laser Absorption Spectroscopy (ICLAS) between 13 540 and 14 070 cm⁻¹. This spectrum is dominated by relatively strong transitions of the 4δ polyad of vibrational states. The achieved sensitivity - on the order of α_min ∼ 10⁻⁹ cm⁻¹ - has allowed one to newly measure 222 very weak transitions with intensities down to 5 × 10⁻²⁸ cm/molecule at 296 K. Fifty new or corrected H₂¹⁶O energy levels belonging to a total of 13 vibrational states could be determined from the rovibrational analysis based on variational calculations by Schwenke and Partridge. The previous investigations in the region by Fourier Transform Spectroscopy were critically evaluated and used to construct the best to date set of energy levels accessed by transitions in the considered region. All the rovibrational transitions reaching these upper energy levels and having intensities larger than 4.0 × 10⁻²⁸ cm/mol were calculated. In the resulting line list, the positions at the level of experimental accuracy were augmented with variational intensities leading to the most complete line list for water in normal isotopic abundance in the 13 500-14 100 cm⁻¹ region.     

ICLAS of weak transitions of water between 11 300 and 12 850 cm: Comparison with FTS databases

Very weak water vapor absorption lines have been investigated by intracavity laser absorption spectroscopy (ICLAS) in the 11 335-11 947 and 12 336-12 843 cm⁻¹ spectral regions dominated by the ν₁ + 3ν₂ + ν₃ and ν₂ + 3ν₃ bands, respectively. A detectivity on the order of α_min ∼ 10⁻⁹ cm⁻¹ was achieved with an ICLAS spectrometer based on a Ti: Sapphire laser. It allowed detecting transitions with an intensity down to 5 × 10⁻²⁸ cm/molecule which is about 10 times lower than the weakest line intensities previously detected in the considered region. A line list corresponding to 1281 transitions with intensity lower than 5 × 10⁻²⁶ cm/molecule has been generated. A detailed comparison with the line lists provided by the HITRAN database and by recent investigations by Fourier transform spectroscopy associated with very long multi pass cell is presented. The rovibrational assignment performed on the basis of the ab initio calculations of Schwenke and Partridge, has allowed for determining 176 new energy levels belonging to a total of 16 vibrational states.     

Solid-state synthesis and magnetic properties of epitaxial FePd3(0 0 1) films

The solid-state synthesis of magnetically soft phase FePd₃ in epitaxial Pd(0 0 1)/Fe(0 0 1)/MgO(0 0 1) film systems was studied experimentally. The system had a Fe to Pd ratio of 1:3. An increase to 450 °C leads to the formation of three variants of ordered L1₀-FePd crystallites. At 500 °C, the solid-state reaction of unreacted Pd with L1₀-FePd crystallites initiates the growth of an ordered epitaxial L1₂-FePd₃(0 0 1) layer. When annealing at 650 °С, a gradual disordering is observed. The magnetic anisotropy (K₁=−2.0×10³ erg/cm³) and the saturation magnetization (M_S=650 emu/cm³) of the disordered FePd₃ phase were determined.     

Intracavity Laser Absorption Spectroscopy of D2O between 12 850 and 13 380 cm

The high resolution absorption spectrum of dideuterated water, D₂O, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 12 850-13 380 cm⁻¹ spectral region which is the higher energy region reported so far for this water isotopologue. Very high deuterium enrichment was necessary to minimize the HDO absorption lines overlapping the D₂O spectrum. The achieved sensitivity (noise equivalent absorption α_min ∼ 10⁻⁹ cm⁻¹) allowed detecting transitions with line strengths on the order of 5 × 10⁻²⁸ cm/molecule. The spectrum analysis, based on recent variational calculations has provided a set of 422 new rovibrational energy levels belonging to 11 vibrational states, including rotational sublevels for four new vibrational states and one level of the (0 9 1) highly excited bending state. The very weak (1 0 4)-(0 0 0) band at 13 263.902 cm⁻¹, which is the highest D₂¹⁶O band currently observed, could be assigned despite the fact that the HDO absorption in the region is stronger by three orders of magnitude. The list of 996 D₂¹⁶O transitions is provided as Supplementary Material.     

DFT study on dissociative adsorption of SiH4 and GeH4 on SiGe(1 0 0)-2 × 1 surface

SiH₄ and GeH₄ dissociative adsorptions on a buckled SiGe(1 0 0)-2 × 1 surface have been analyzed using density functional theory (DFT) at the B3LYP level. The Ge alloying in the Si(1 0 0)-2 × 1 surface affects the dimer buckling and its surface reactivity. Systematic Ge influences on the reaction energetics are found in SiH₄ and GeH₄ reactions with four dimers of Si^∗-Si, Ge^∗-Si, Ge^∗-Ge, and Si^∗-Ge (∗ denotes the protruded atom). On a half H-covered surface, the energy barriers for silane and germane adsorption are higher than those on the pristine surface. The energy barrier for silane adsorption is higher than the corresponding barrier for germane adsorption. Rate constants are also calculated using the transition-state theory. We conclude that the SiGe surface reactivity in adsorption reaction depends on the Ge presence in dimer form. If the surface Ge is present in form of Ge^∗-Ge, the surface reactivity decreases as the Ge^∗-Ge content increases. If the surface Ge prefers to be in form of Ge^∗-Si at low Ge contents, the surface reactivity increases first, then decreases at high Ge surface contents when Ge^∗-Ge prevails. The calculated rate constant ratio of GeH₄ adsorption on Si^∗-Si over Ge^∗-Ge at 650 °C is 2.1, which agrees with the experimental ratio of GeH₄ adsorption probability on Si(1 0 0) over Si(1 0 0) covered by one monolayer Ge. The experimental ratio is 1.7 measured through supersonic molecular beam techniques. This consistency between calculation and experimental results supports that one monolayer of Ge on Si(1 0 0) exists in form of Ge^∗-Ge dimer.     

Formation of Al-N co-doped p-ZnO/n-Si (1 0 0) heterojunction structure by RF co-sputtering technique

Al-N co-doped ZnO (ZnO:Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 °C the high hole concentration of ZnO:Al-N co-doped film was found to be 2.86 × 10¹⁹ cm⁻³ and a low resistivity of 1.85 × 10⁻² Ω-cm. The current-voltage characteristics of the obtained p-ZnO:Al-N/n-Si heterojunction showed good diode like rectifying behavior. Room temperature photoluminescence spectra of annealed co-doped films revealed a dominant peak at 3.24 eV.     

Growth and thermal evolution of submonolayer Pt films on Ru(0 0 0 1) studied by STM

The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage θ_Pt, growth temperature T_G and post-growth annealing temperature T_A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 × 10⁻⁴ ML/s. Two types of orientation, rotated by 180° and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer.     

Infrared reflection absorption study of carbon monoxide adsorption on Cu(1 0 0)-c(2 × 2)-Pd surfaces formed by palladium vacuum-depositions at various temperatures

Using infrared reflection absorption spectroscopy (IRRAS) and temperature programmed desorption (TPD), we investigated carbon monoxide (CO) adsorption and desorption behaviors on atomic checkerboard structures of Cu and Pd formed by Pd vacuum deposition at various temperatures of Cu(1 0 0). The 0.15-nm-thick Pd deposition onto a clean Cu(1 0 0) surface at room temperature (RT) showed a clear c(2 × 2) low-energy electron diffraction (LEED) pattern, i.e. Cu(1 0 0)-c(2 × 2)-Pd. The RT-CO exposure to the c(2 × 2) surfaces resulted in IRRAS absorption caused by CO adsorbed on the on-top sites of Pd. The LEED patterns of the Pd-deposited Cu(1 0 0) at higher substrate temperatures revealed less-contrasted c(2 × 2) patterns. The IRRAS intensities of the linearly bonded CO bands on 373-K-, 473-K-, and 673-K-deposited c(2 × 2) surfaces are, respectively, 25%, 22%, and 10% less intense than those on the RT-deposited surface, indicating that Pd coverages at the outermost c(2 × 2) surfaces decrease with increasing deposition temperature. In the initial stage of the 90-K-CO exposure to the RT surface, the band attributable to CO bonded to the Pd emerged at 2067 cm⁻¹ and shifted to higher frequencies with increasing CO exposure. At saturation coverage, the band was located at 2093 cm⁻¹. In contrast, two distinct bands around 2090 cm⁻¹ were apparent on the spectrum of the 473-K-deposited surface: the CO saturation spectrum was dominated by an apparent single absorption at 2090 cm⁻¹ for the 673-K-deposited surface. The TPD spectra of the surfaces showed peaks at around 200 and 300 K, which were ascribable respectively to Cu-CO and Pd-CO. Taking into account the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the ordered checkerboard structures.     

D2O: ICLAS between 13 600 and 14 020 cm and normal mode labeling of the vibrational states

The high resolution absorption spectrum of dideuterated water, D₂¹⁶O, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 13 600-14 020 cm⁻¹ spectral region which is the highest energy region reported so far for this water isotopologue. Because the HD¹⁶O absorption is stronger by three orders of magnitude in the region under study, it was necessary to use high deuterium enrichment in order to minimize the HD¹⁶O absorption lines overlapping the D₂¹⁶O spectrum. With the high sensitivity achieved (noise equivalent absorption α_min ∼10⁻⁹ cm⁻¹), transitions with line strengths on the order of 5 × 10⁻²⁸ cm molecule⁻¹ could be detected. The spectrum analysis, based on recent variational calculations has provided a set of 177 new rovibrational energy levels belonging to six vibrational states.The most complete set of 53 vibrational energy levels of D₂¹⁶O, including the three newly determined band origins, was constructed from an exhaustive review of the literature data. The fitting of the parameters of the vibrational effective Hamiltonian has allowed to reproduce the whole set of vibrational energies with an rms deviation of 0.055 cm⁻¹. This simple model gave consistent vibrational labels of the D₂¹⁶O states up to 18 000 cm⁻¹. Above 15 000 cm⁻¹, Fermi and Darling-Dennison resonance interaction were found to induce strong vibrational mixings of the wave functions in the normal mode basis, leading to ambiguous vibrational labeling.     

Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 1 1)

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01 cm⁻¹ of HDXRD curve and E₂ (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a = 5.3354 ?) and H-GaN (a_epi = 3.214 ?, c_epi = 5.119 ?) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (D_screw = 7 × 10⁸ cm⁻²) and edge-type (D_edge = 2.9 × 10⁹ cm⁻²) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.     

Seedlayer interface enhanced magnetic anisotropy in CoPt (0 0 0 2)-textured films

The effects of interface roughness of Ta seedlayer on the structural and magnetic properties of Co₇₂Pt₂₈(20 nm)/Ru(30 nm)/Pt(2 nm)/Ta(5 nm)/glass were investigated. Uniaxial perpendicular magnetic anisotropy (8.6×10⁶ ergs/cc), coercivity (5.5 kOe) and nucleation field (−2.8 kOe) in the Co₇₂Pt₂₈ thin film sputter-deposited on relatively smooth surface of Ta seedlayer were achieved. The results showed that relatively smoother interface roughness of Ta seedlayer improved the CoPt/Ru (0 0 0 2) texture and magnetic properties.     

High-resolution FTIR and MMW study of the v4 = 2 (A1, E) excited state of NF3 near 985 cm: the axial ground state rotational constants derived by the “loop-method”

The two substates v₄ = 2⁰ (A₁, 983.702 cm⁻¹) and v₄ = 2^±2 (E, 986.622 cm⁻¹) of the oblate symmetric top molecule, ¹⁴NF₃, have been studied by high-resolution (2.5 × 10⁻³ cm⁻¹) infrared spectroscopy of the overtones and 2ν₄ − ν₄ hot bands. Transitions of the overtone, the hot band, and the previously measured fundamental band were combined to yield 585 ground state combination differences differing in K by ±3, with K_max = 36. Using the “loop-method,” a fit (standard deviation σ = 0.320 × 10⁻³ cm⁻¹) provided a complete set of the hitherto not experimentally known axial ground state constants. In units of cm⁻¹ these have the following values: . Upper state parameters were determined using a vibrationally isolated model. Considering l (2, 2) and l (2, −1) interactions between the v₄ = 2⁰ and v₄ = 2^±2 substates and effects accounting for the l (4, −2) interactions within the kl = −2 levels, 25 upper state parameters were obtained by fitting 2747 IR data (1842 transitions, 905 deduced energies, J_max = 42, K_max = 39) with σ_IR = 0.353 × 10⁻³ cm⁻¹. Moreover, millimeter-wave spectroscopy furnished 86 transitions (J_max = 16, K_max = 13) measured on the v₄ = 2 excited state. A merged fit, refining 24 parameters using the described model gave σ_IR = 0.365 × 10⁻³ cm⁻¹ andσ_MMW = 0.855 × 10⁻⁶ cm⁻¹ (26 kHz). The anharmonicity constants (in cm⁻¹) are x₄₄ = −0.84174 (2) and g₄₄ =  + 0.73014 (1). In addition to this model, the D, Q, and L reductions of the rovibrational Hamiltonian were tested. Standard deviations σ_IR = 0.375 × 10⁻³ cm⁻¹ and σ_MMW = 0.865 × 10⁻⁶ cm⁻¹ were obtained for both D and L reductions, and σ_IR = 0.392 × 10⁻³ cm⁻¹ and σ_MMW = 0.935 × 10⁻⁶ cm⁻¹ for Q reduction. The unitary equivalence of the majority of the 18 tested relations between the derived parameters was satisfactorily fulfilled. This confirms that the v₄ = 2 excited vibrational state can be considered in reasonable approximation to be isolated.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Kinetics of the H + NCO reaction

Ab initio transition state theory (TST) based master equation simulations are used to predict the temperature and pressure dependence of the H + NCO reaction rate and product branching. The barrierless entrance channels to form singlet HNCO and NCOH are studied with variable reaction coordinate TST employing a potential energy surface obtained from multi-reference configuration interaction ab initio calculations. The remaining channels, including reactions on the triplet surface, are studied with standard TST methods employing high level electronic structure results. The energy transfer parameters for the master equation simulations arise from a fit to the experimentally observed HNCO dissociation rate. The lowest energy threshold to formation of bimolecular products, ³NH + CO, lies well below the reactants. The bottleneck for intersystem crossing, which precedes the formation of ³NH + CO from the singlet adducts, becomes the dominant bottleneck for that channel at quite low energies relative to reactants. The effect of this bottleneck is studied with model calculations designed to reproduce detailed experimental observations of photolysis branching ratios. This bottleneck greatly reduces the flux from H + NCO to ³NH + CO via the singlet adducts. As a result, stabilization and reaction on solely the triplet surface are significant components of the overall rate. The present predictions for the high pressure and collisionless limit rate coefficients are accurately reproduced over the 200-2500 K range by the expressions, 1.53 × 10⁻⁵T^−1.86exp(−399/T) + 1.07 × 10³T^−3.15exp(−15219/T) and 5.62 × 10⁻¹²T^0.493exp(148/T) cm³ molecule⁻¹ s⁻¹, respectively, where T is in K. These predictions are in reasonably satisfactory agreement with the somewhat discordant experimental rate measurements.     

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface at 25 °C have been studied by internal reflection infrared spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. Both molecules form a dative bond to the empty dangling bonds on the In-P heterodimers and the second-layer In-In dimers and vibrate symmetrically at 2319 (2315) and 2285 (2281) cm⁻¹ and asymmetrically at 2339 (2339) and 2327 (2323) cm⁻¹. A fraction of these species dissociate into adsorbed PH₂ with the hydrogen and tertiarybutyl ligands transferring to nearby phosphorus sites. The calculated energy barriers for desorption (<11 kcal/mol) of these molecules is less than that for dissociation (>17 kcal/mol) and explains their low sticking probabilities at elevated temperatures under InP growth conditions.     

An ab initio-based approach to phase diagram calculations for GaN(0 0 0 1) surfaces

Surface phase diagrams of GaN(0 0 0 1)-(2 × 2) and pseudo-(1 × 1) surfaces are systematically investigated by using our ab initio-based approach. The phase diagrams are obtained as functions of temperature T and Ga beam equivalent pressure p_Ga by comparing chemical potentials of Ga atom in the vapor phase with that on the surface. The calculated results imply that the (2 × 2) surface is stable in the temperature range of 700-1000 K at 10⁻⁸ Torr and 900-1400 K at 10⁻² Torr. This is consistent with experimental stable temperature range for the (2 × 2). On the other hand, the pseudo-(1 × 1) phase is stable in the temperature range less than 700 K at 10⁻⁸ Torr and less than 1000 K at 10⁻² Torr. Furthermore, the stable region of the pseudo-(1 × 1) phase almost coincides with that of the (2 × 2) with excess Ga adatom. This suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1 × 1) to the (2 × 2) with Ga adatom and vice versa.