Work function of the adsorption system of potassium on tungsten

The work functions φ_hklof tungsten single crystal planes as functions of the surface densities N_hkl of the adsorbed potassium have been measured by means of the field emission method. Sealed-off field emission tubes with a Faraday collector and rotatable emitter were used. Another, special tube was made in order to determine the surface density of potassium. The unequilibrated adlayers on {110}, {112}, {100} and {111} tungsten single crystal planes have been investigated. For all the planes investigated the φ_hkl(N_hkl) dependence exhibited a distinct minimum. An attempt has been made to compare the experimental results with the theoretical models suggested recently.     

Atomically sharp 〈111〉 trihedral angle of a tungsten tip

The processes occuring in the course of heating of a tungsten tip in an electric field and resulting in the formation of the 〈111〉 trihedral angle at the intersection of three {011} closest packed planes in the crystal lattice of tungsten are investigated using field-emission microscopy, continuous-mode field-desorption microscopy, and high-temperature field evaporation microscopy. It is demonstrated that atomically sharp angles can be formed at temperatures above 2200 K in the absence of field evaporation. An atom forming the apex of the trihedral angle lies in the triangle of atoms arranged in the (111) plane. In the triangle, each atom is located at the intersection of the 〈111〉 close-packed atomic rows, which are the boundaries of the {011} planes forming the trihedral angle and the {112} planes forming the angle edges two rows in width.     

Surface energy anisotropy of iridium

Field-ion microscopy was used to study the faceting behavior and surface energy anisotropy of iridium in vacuum and in hydrogen. In vacuum below approximately 1300 K the order of faceting and the activation energy for growth of {111} facets agreed with previously published results of FIM studies. The unexpected faceting behavior of {210} planes was examined in terms of the geometry of field evaporated specimens. The observed anisotropy at temperatures above 1300 K was in qualitative agreement with Morse and Mie potential calculations and in nearly quantitative agreement with the pairwise bonding model using σ₂ = 0.4, σ₃ = 0.2. The observed maximum anisotropy of 8.8% for iridium at 1360 K fell within the range of extrapolated values for other metals at one-half the absolute melting temperature. Hydrogen appeared to lower the surface energy of each plane by only about 0.1%. An anisotropic effect of hydrogen on the faceting behavior, however, was observed and suggested that surface diffusion rates in {110} and {311} regions were preferentially increased in the presence of hydrogen.     

Field desorption microscopy of the 〈111〉 trihedral angle of a reconstructed tungsten tip

The surface structure near the 〈111〉 trihedral angle, which forms in an electric-field-heated tungsten tip, is studied by field electron microscopy, continuous-mode field desorption microscopy, and high-temperature field evaporation microscopy. The shape and structure of the surface depend on the temperature, field, and time. The angle is formed by three {011} planes, with the (111) plane at its vertex being retained in the form of a triangle or a hexagon with randomly arranged atomic clusters. The edges between {011} faces represent long and narrow {112} planes having longitudinal or transverse steps. In the absence of field evaporation, the edges and angle sharpen, becoming monoatomic. Field evaporation from the angle or microprotrusions on the edges extends these edges and causes transverse steps to appear on them. The explanation of the changes in the shape and structure of the surface is based on considering the competition of surface diffusion, crystal growth in an electric field, and field evaporation.     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.     

Change in the emitter surface during high-current-density field emission from the 〈111〉 trihedral angle of a reconstructed tungsten tip

Changes in the shape and emission characteristics of the atomically sharp trihedral 〈111〉 angle of a tungsten tip reconstructed in an electric field are studied by continuous-mode field desorption microscopy during high-current-density field emission. The main changes in the tip shape and the slope of the Fowler-Nordheim characteristic occur at an emission current of 1–5 μA. At a current of 50–100 μA taken from the angle, the tip shape and emission characteristics stabilize and remain unchanged in the range 0–150 μA. The new tip shape is characterized by the widening of the angle edges; the appearance of {112} and {001} plane steps in them; a decrease in the sizes of the {011} planes forming the angle faces; and the appearance of steplike transition regions between {011}, {001}, and {112} faces. These changes in the tip shape are related to the fact that the emission field is weaker than the electric field used for preliminary tip reconstruction, the weakening of the field by the space charge of emitted electrons, and a nonuniform temperature distribution in the tip.     

Bi12GeO20晶体的位错蚀斑与对称群

用化学浸蚀法系统的研究了Bi₁₂GeO₂₀晶体{100},{100},{111}等晶面独特浸蚀斑规律并用对称群理论进行分析.理论预示的蚀斑形态与实验结果符合很好.显示位错蚀斑是由{112}晶面组成,即晶体的惯态面为{112}.     

Special misorientations in localized deformation regions in Fe-3%Si alloy single crystals

Extended regions located at an angle of 20° to the rolling plane are observed inside deformation bands in a (110)[001] Fe-3%Si alloy single crystal at a high strain (～60%). These regions were interpreted earlier as shear bands. The lattice orientation in these bands is close to (110)[001], and their habit plane is parallel to the {112} planes of the deformed {111}〈112〉 matrix. The misorientations between the bands and the matrix group around special misorientations Σ9, Σ19a, Σ27a, and Σ33a, which are characterized by close angles of rotation about axis 〈110〉. During primary recrystallization, the (110)[001] grains growing from the bands retain segments of the corresponding special boundaries with the deformed matrix.     

Growth and desorption of indium epitaxial layers investigated by high field microscopy

Growth of indium single crystals on tungsten field emission tips was carried out by deposition of indium from vapour in ultra high vacuum, using substrate temperatures in the range of 293–420 K. Two different tungsten tips were used as the substrate: a perfect W single crystal in one case and a bi-crystal with a distinct grain boundary in the other. No influence of the grain boundary on the epitaxial growth was found. Two orientation relationships were observed mostly: {111}In ∥ {110}W with 〈110〉In ∥ 〈111〉W and {111}In ∥ {100}W with 〈110〉In ∥ 〈110〉W. In the first case the growth was initiated by the indium nucleus created on the ledges of the {110}W plane. A field strength of 0.9 V/Å was found for the evaporation field of indium. The field strength of the desorption of In-W interfacial layer atoms was found to be 4.4–5.2 V/Å. A mechanism of the growth of indium crystals has been proposed.     

Field electron emission changes by face specific adsorption of aluminum oxide and corresponding decomposition products on tungsten {110} and {100} planes

After deposition of aluminum oxide on a tungsten field emission microscope (FEM) tip and stepwise heating, three stages of emission changes were observed on {100}. Stages I and II cause work function decreases of 0.28 and 0.07 eV, respectively. Stage III is characterized by a large increase (Δ??+3 eV). The changes are discussed in terms of interaction of decomposition products (oxygen and aluminum) and adsorption of aluminum oxide. On {110} only a single aluminum oxide layer growth, which results in a work function decrease to ?=4.69 eV, is observed. The field electron emission from this layer was measured between 1400°K and room temperature. The experimental values were compared with those determined from Christov's unified theory of field and thermionic emission. The {110} layer values coincide with those obtained earlier from an aluminum oxide covered tungsten {112}.     

β—SiC外延层中晶体缺陷的观察

用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于<110>方向的直线。60°位错可分解为两个1/6<112>SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6<110>压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。 关键词：     

Preequilibrium thermofield microprotrusions as effective field point sources of electrons and ions

Field emission methods are employed for studying the conditions of formation, crystallographic localization, and emissive properties of preequilibrium thermofield microprotrusions for a number of refractory metals. Individual preequilibrium microprotrusions can be easily obtained using a W emitter of the ordinary 〈110〉 orientation; however, the number of such protrusions on the surface changes with time in the course of ionic emission, as well as their emission parameters (the parameters and the number of microprotrusions do not change in the case of electron emission). Trihedral angles of the rearranged tip, which are formed in the {111} regions, exhibit higher stability to ionic emission. A single trihedral angle stably emitting ions and located on the geometrical axis of the emitter can easily be obtained with the help of a W emitter with the 〈111〉 orientation. Two stable preequilibrium microprotrusions arranged symmetrically about the axis of the emitter in the {111} regions can be obtained using a Ta emitter of the conventional 〈110〉 orientation. Such microprotrusions virtually do not change the emission parameters during long-term extraction of ionic current.     

Si,GaAs和LiNbO3单晶的堵塞效应

我们利用背散射方法得到Si,GaAs和LiNbO₃单晶堵塞图,以及GaAs单晶{110},{100}和{112}面堵塞半角ψ_1/2值.并得到因离子注入受损伤Si片{110}面堵塞坑深度随注入剂量增加而变浅的结果。作为对实验装置和方法的检验,我们也得到了Si单晶堵塞图和测量了Si单晶{110},{111}和{100}晶面堵塞半角ψ_1/2值。 关键词：     

Study on titanium carbide field emitters by field-ion microscopy,field-electron emission microscopy,Auger electron spectroscopy,and atom-probe field-ion microscopy

Surface structure, composition, and some field-electron emission properties are examined for thermally annealed titanium carbide emitters. As a result of high temperature heating, low-index planes of {100} and {111} become facetted and are observed as dark areas in field-electron emission patterns. Electrons are emitted predominantly from the {110} planes. The surface composition becomes enriched with carbon when the carbon deficient titanium carbide, TiC_0.71, is heated at high temperatures in vacuum better than 10^?7 Pa. The topmost (110) layer consists of both Ti and C atoms. The instability in the electron emission current of titanium carbide is considered to be due to the local work function change caused by an interaction between vacuum residual gases and chemically active titanium atoms on the emitter surface.     

Grain-boundary faceting at a = 3, [110]/{112} grain boundary in a cubic zirconia bicrystal

The atomic structure of a = 3, [110]/{112} grain boundary in a yttria-stabilized cubic zirconia bicrystal has been investigated by high-resolution transmission electron microscopy (HRTEM). It was found that the grain boundary migrated to form periodic facets, although the bicrystal was initially joined so as to have the symmetric boundary plane of {112}. The faceted boundary planes were indexed as {111}/{115}. The structure of the {111}/{115} grain boundary was composed of an alternate array of two types of structure unit: {112}- and {111}-type structure units. HRTEM observations combined with lattice statics calculations verified that both crystals were relatively shifted by (α/4)[110] along the rotation axis to form a stable grain-boundary structure. A weak-beam dark-field image revealed that there was a periodic array of dislocations along the grain boundary. The grain-boundary dislocations were considered to be introduced by the slight misorientation from the perfect = 3 orientation. The fact that the periodicity of the facets corresponded to that of the grain-boundary dislocations must indicate that the introduction of the grain-boundary dislocations is closely related to the periodicity of the facets. An atomic flipping model has been proposed for the facet growth from the initial = 3, {112} grain boundary.     

The initial oxidation of molybdenum: IV. Epitaxial growth of oxide on molybdenum

The oxide which grows in low oxygen pressure and at temperatures between 700 and 1000 K on molybdenum is shown to be MoO₂. The epitaxial relationships between the oxide and the metal (100), (110) and (111) surfaces are given. The epitaxial relationships of oxide on the molybdenum (100) and (110) surfaces are geometrically equivalent. The oxide grows on the (111) molybdenum surface with no major oxide plane parallel to the substrate. It is suggested that the epitaxy of MoO₂ on the (111) surface is a consequence of growth on {211} molybdenum facets. The atomic positions in the pairs of interfacial planes found are given. There is little agreement between the positions of ions in the oxide and substrate lattice sites. Only in the postulated case of MoO₂ on {211} Mo facets is a small misfit found.     

Sessile splitting of screw dislocations in b.c.c. metals

The energies of six different sessile splittings of screw dislocation 1/2 [111], which can occur in b.c.c. metals assuming the stacking faults on {110} and {112} planes according to the hard sphere model, are compared. The regions of the values of stacking fault energies on {110} and {112} planes, in which a given splitting is favoured over the other five, are then shown.     

Crystallographic anisotropy in chemisorption: Nitrogen on tungsten single crystal planes

A molecular beam technique for the determination of sticking probabilities and surface coverages was used in earlier work to investigate the adsorption of nitrogen on tungsten {110}, {111} and {100} single crystal planes. In the present paper these studies have been extended to the {310}, {320} and {411} planes. Absolute sticking probabilities and adatom surface coverages are reported for crystal temperatures between 90 K and 960 K. Crystallographic anisotropy in this system is exemplified by zero coverage sticking probabilities with the crystal at room temperature: {110}, 1&#x0303;0^?2; {111}, 0.08; {411}, 0.4; {100}, 0.59; {310}, 0.72; {320}, 0.73. Results for planes on the [001] zone are quantitatively described by a general model developed for adsorption on stepped planes as an extension to the precursor-state order-disorder model for adsorption kinetics of King and Wells. It is shown that nitrogen dissociation only takes place at vacant pairs of {100} sites, but that subsequently the chemisorbed adatoms so formed may migrate out onto {110} terraces. The results are critically analysed in terms of the available LEED and work function data for nitrogen on tungsten single crystal planes, and the general model developed by Adams and Germer.     

Blocking-Effekte bei Transmission von α-Teilchen durch Germanium- und Siliziumkristalle

The energy loss of channeled and blocked α-particles of ThC transmitted parallel to the {111} and also the {110} planes of germanium and silicon was investigated. In the spectrum of the transmittedα-particles measured with a small-acceptance-angle detector, in addition to the random and normally channeled α-groups a separated group with a high energy loss was observed in the direction of the {111} planes, while in the direction of the {110} planes this group is not well separated from the randomα-group. A model is proposed which describes this high energy loss for observation in the direction of either plane. In agreement with this model a higher yield ofα-particles with high energy loss in the {111} planes in comparison with the {110} planes of germanium and silicon was measured.     

Thermal faceting of the rutile TiO2(001) surface

Temperature dependent faceting of rutile TiO₂ surfaces cut to the (001) plane has been reported [Tait and Kasowski, Phys. Rev. B20 (1979) 5178]. By comparing LEED data to beam positions calculated for various sets of facet planes, the facet planes have been identified. The first ordered structure observed on annealing ion bombarded surfaces is composed of {011} facets with the facet planes in a (2 × 1) reconstruction. The high temperature structure produced on annealing above 1300K is best described as {114} facets; however, there are deviations of the observed LEED pattern from that calculated for {114} facets, possibly because of the presence of related planes. LEED data have now been obtained on the behavior of (110), (100), (011), (114), and (001) surfaces in UHV. The observed stability of TiO₂ surfaces can be related to the Ti ion coordination numbers in the surface plane as derived from stoichiometric terminations of the rutile lattice.