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1.
We demonstrate electrical control of the spin relaxation time T1 between Zeeman-split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W identical withT1(-1) by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions, and from these data we extract the spin-orbit length. We also measure the dependence of W on the magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1 T, where T1 exceeds 1 s.  相似文献   

2.
We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudospin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Single-qubit rotations and the controlled-NOT operation can be realized. We estimated the relaxation (T1) and coherence (T2) times and the (tunable) quality factor. This scheme implies important experimental advantages for single electron spin control.  相似文献   

3.
We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.  相似文献   

4.
We investigate low-frequency electron spin dynamics in a quantum Hall system with wire confinement by nuclear spin relaxation measurements. We developed a technique to measure the local nuclear spin relaxation rate T(1)(-1). T(1)(-1) is enhanced on both sides of the local filling factor ν(wire)=1, reflecting low-frequency fluctuations of electron spins associated with Skyrmions inside the wire. As the wire width is decreased, the fast nuclear spin relaxation is suppressed in a certain range of Skyrmion density. This suggests that the multi-Skyrmion state is modified and the low-frequency spin fluctuations are suppressed by the wire confinement.  相似文献   

5.
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major candidates for the realization of quantum information storage and processing devices, provided that sufficiently long coherence and relaxation times can be achieved. The results presented here indicate that this prerequisite might be realized in both electron and hole quantum dots, taking one large step towards quantum computation with spin qubits.  相似文献   

6.
We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.  相似文献   

7.
The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.  相似文献   

8.
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing readout of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on the in-plane magnetic field.  相似文献   

9.
10.
We report on a method for single-shot readout of spin states in a semiconductor quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. The method is analyzed theoretically, and compared to a previously used method. We experimentally demonstrate the method by performing readout of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.  相似文献   

11.
We study nuclear spin dynamics in a quantum dot close to the conditions of electron spin resonance. We show that at a small frequency mismatch, the nuclear field detunes the resonance. Remarkably, at larger frequency mismatch, its effect is opposite: The nuclear system is bistable, and in one of the stable states, the field accurately tunes the electron spin splitting to resonance. In this state, the nuclear field fluctuations are strongly suppressed, and nuclear spin relaxation is accelerated.  相似文献   

12.
We study the mechanism of nuclear spin relaxation in quantum dots due to the electron exchange with the 2D gas. We show that the nuclear spin relaxation rate 1/T(1) is dramatically affected by the Coulomb blockade (CB) and can be controlled by gate voltage. In the case of strong spin-orbit (SO) coupling the relaxation rate is maximal in the CB valleys, whereas for the weak SO coupling the maximum of 1/T(1) is near the CB peaks.  相似文献   

13.
Using the Majorana fermion representation of spin-1/2 local moments, we show how the dynamic spin correlation and susceptibility are obtained directly from the one-particle Majorana propagator. We illustrate our method by applying it to the spin dynamics of a nonequilibrium quantum dot, computing the voltage-dependent spin relaxation rate and showing that, at weak coupling, the fluctuation-dissipation relation for the spin of a quantum dot is voltage dependent. We confirm the voltage-dependent Curie susceptibility recently found by Parcollet and Hooley [Phys. Rev. B 66, 085315 (2002)]].  相似文献   

14.
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast with the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of phonon-mediated fluctuation in the electron spin preces-sion and subsequent spin phase diffusion. Specifically, we consider modulations in the longitudinal g factor and hyperfine interaction induced by the phonon-assisted transitions between the lowest electronic states. Prominent differences in the temperature and magnetic field dependence between the proposed mechanism and the spin-flip transitions are expected to facilitate its experimental verification. Numerical estimation demonstrates highly efficient spin relaxation in typical semiconductor quantum dots.  相似文献   

15.
Quantum computation requires a continuous supply of rapidly initialized qubits for quantum error correction. Here, we demonstrate fast spin state initialization with near unity efficiency in a singly charged quantum dot by optically cooling an electron spin. The electron spin is successfully cooled from 5 to 0.06 K at a magnetic field of 0.88 T applied in Voigt geometry. The spin cooling rate is of order 10(9) s-1, which is set by the spontaneous decay rate of the excited state.  相似文献   

16.
Hyperfine interactions with randomly oriented nuclear spins present a fundamental decoherence mechanism for electron spin in a quantum dot, that can be suppressed by polarizing the nuclear spins. Here, we analyze an all-optical scheme that uses hyperfine interactions to implement laser cooling of quantum-dot nuclear spins. The limitation imposed on spin cooling by the dark states for collective spin relaxation can be overcome by modulating the electron wave function.  相似文献   

17.
We consider a quantum dot attached to leads in the Coulomb blockade regime that has a spin 1 / 2 ground state. We show that, by applying an ESR field to the dot spin, the stationary current in the sequential tunneling regime exhibits a new resonance peak whose linewidth is determined by the single spin decoherence time T2. The Rabi oscillations of the dot spin are shown to induce coherent current oscillations from which T2 can be deduced in the time domain. We describe a spin inverter which can be used to pump current through a double dot via spin flips generated by ESR.  相似文献   

18.
We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.  相似文献   

19.
The prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and coherence in electronic materials, resolving in the process a long-standing puzzle of why spin relaxation is extremely fast in Al (compared with other simple metals). In the study of spin entanglement, we consider two electrons in a coupled GaAs double-quantum-dot structure and explore the Hilbert space of the double dot. The specific goal is to critically assess the quantitative aspects of the proposed spin-based quantum dot quantum computer architecture. Finally, we discuss our theory of spin-polarized transport across a semiconductor/metal interface. In particular, we study Andreev reflection, which enables us to quantify the degree of carrier spin polarization and the strength of interfacial scattering.  相似文献   

20.
The possibility of self-polarization of nuclear spins predicted by M.I. D’yakonov and V.I. Perel’ (JETP Lett. 16, 398 (1972)) has been investigated in the case of the electric current passing through a single quantum dot. The mechanisms of nuclear spin relaxation in the quantum dot leading to the polarization and depolarization of the nuclei are discussed. To make the nuclear polarization possible, it has been proposed to increase the nuclear polarization rate via the interaction of an electron localized in the quantum dot with electromagnetic oscillations in an electric circuit, whose proper frequency is tuned to a resonance with the Zeeman splitting of an electron level in the quantum dot.  相似文献   

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