共查询到20条相似文献,搜索用时 796 毫秒
1.
《Solid State Communications》2002,121(2-3):67-71
Beryllium has been implanted into both n- and p-type 6H–SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels. 相似文献
2.
Photoluminescence of multiwalled carbon nanotubes excited at different wavelengths 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper the multiwalled carbon nanotubes (MWNTs) were synthesized by a
chemical vapour deposition and the SEM graph shows that the sample has good
construction. The micro-Raman spectrum shows the characteristic line of the MWNTs
and an additional line produced by the defects on the outer surface of MWNTs. The
photoluminescence (PL) spectra observed experimentally are variable under different
excitation wavelengths and the strong excitation wavelength dependence of
luminescence indicates a distribution of emitters which include electron $\pi$ in
excited states and the Van Hove singularities. The absorption spectra confirm the
transition channels which are consistent with the PL emission. 相似文献
3.
Photoluminescence (PL) measurements on the 0.84 eV Cr-related PL line have been made on both Cr diffused and Cr doped GaAs. In the former case, no luminescence is observed below a diffusion temperature of 800°C. The form of the PL spectrum is found to be the same, independent of whether the majority donor species is group IV(Si) or group VI(Te). PL profiling experiments are used to show that the PL intensity is proportional to the concentration of chromium. Although it is possible that a group VI donor is involved, the insensitivity of the spectrum to different donor species and its linear dependence on chromium concentration suggest that the luminescent centre is a [CrGa-VAs] complex.Measurements on growth doped material are typified by the low intensity near the seed and the scatter in PL intensity in samples where the measured [Cr] is nearly constant. By comparison with the results on the diffused material, the anomalously low PL intensity near the seed end is deduced to be indicative of the high crystal stoichiometry in this region. 相似文献
4.
T. P. Sidiki A. Rü hm W. -X. Ni G. V. Hansson C. M. Sotomayor Torres 《Journal of luminescence》1998,80(1-4):503-507
We present an experimental approach to correlate optical and structural properties of Si/Si1−xGex multiple quantum wells as determined by photoluminescence (PL) and X-ray diffraction, respectively. The optical properties of the quantum wells were characterised by studying the dependence of luminescence on temperature and excitation density. An enhanced PL yield and an increased quenching temperature were observed for a sample grown at 650°C as compared to one grown at 600°C. Pronounced interdiffusion across the multiple quantum well interfaces as well as significant lattice distortions within the SiGe layers have been observed. 相似文献
5.
The temperature dependence of the optical absorption edge and integrated luminescence of CdS semiconductor doped glasses, having similar characteristics but manufactured by different manufactures like Corning 373 and Schott 1743 has been investigated. Transmission Electron Microscope (TEM) analysis is presented for these samples to understand the contribution of the inhomogeneous distribution of nanocrystal size. The energy gap shrinkage coefficient (α) and effective phonon energy (θ) have been derived from the temperature dependence of the energy gap. The activation energy of thermal photoluminescence (PL) quenching has been derived from the temperature dependence of luminescence intensity. An anomalous behaviour of the luminescence intensity and of bandwidth in the temperature range 50-10 K has been discussed using configuration co-ordinate model. The difference in the behaviour of different samples in the range 50-10 K has been suggested to arise from the inhomogeneous size distribution, which is supported by TEM analysis. 相似文献
6.
This paper reports the luminescence properties of spark-processed Si (sp-Si) prepared with different atmospheres such as air, O2, and N2 in low vacuum range (50-760 Torr). Three main luminescence bands are observed from spark-processed Si (sp-Si). In addition to the well-known two luminescence bands in the blue/violet peaking at 410 nm and green peaking at 500 nm, a novel UV luminescence band is detected for the sp-Si prepared in N2. The temperature dependence of photoluminescence (PL) characteristics of the newly detected UV luminescence band is examined. Further studies of photoluminescence excitation (PLE) have been performed and origins of luminescence are discussed based on the experimental results. 相似文献
7.
Tetyana V. Torchynska 《Journal of luminescence》2012,132(8):1848-1852
The paper presents the original study of photoluminescence (PL) and Raman scattering spectra of core–shell CdSe/ZnS quantum dots (QDs) covered by the amine-derivatized polyethylene glycol (PEG) with luminescence interface states. First commercially available CdSe/ZnS QDs with emission at 640 nm (1.94 eV) covered by PEG polymer have been studied in nonconjugated states. PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in a CdSe core and to the hot electron–hole recombination via high energy luminescence states. The study of high energy PL bands in QDs at different temperatures has shown that these PL bands are related to luminescence interface states at the CdSe/ZnS or ZnS/polymer interface. Then CdSe/ZnS QDs have been conjugated with biomolecules—the Osteopontin antibodies. It is revealed that the PL spectrum of bioconjugated QDs changed essentially with decreasing hot electron–hole recombination flow via luminescence interface states. It is shown that the QD bioconjugation process to Osteopontin antibodies is complex and includes the covalent and electrostatic interactions between them. The variation of PL spectra due to the bioconjugation is explained on the basis of electrostatic interaction between the QDs and biomolecule dipoles that stimulates re-charging QD interface states. The study of Raman scattering of bioconjugated CdSe/ZnS QDs has confirmed that the antibody molecules have the electric dipoles. It is shown that CdSe/ZnS QDs with luminescence interface states are promising for the study of bioconjugation effects with specific antibodies and can be a powerful technique in biology and medicine. 相似文献
8.
No known reports exist on luminescence enhancement under polarized light excitation. In this study, ZnS nanocrystals have been observed to produce brighter luminescence when excited by polarized light. ZnS:Mn bulk and nanocrystals have shown fivefold to tenfold increase in photoluminescence (PL) intensity when excited with linearly polarized light at 305 nm and 340 nm. Luminescence enhancement to a lesser degree was observed with linearly polarized light excitation for ZnS:Cu, Al and ZnS:Ag, Al nanocrystals. The observations suggest emission intensity dependence on the degree of anisotropy, which could be correlated mainly with the symmetry of the luminescence center and also to a lesser extent with nanoparticle shape asymmetry. 相似文献
9.
The photo (PL) and electro (EL) luminescence in ZnS: MnLa and ZnS: La have been studied. The enhancement and quenching of
emission bands have been observed on the simultaneous application of sinusoidal field and photons. The wave shape, voltage,
frequency and temperature dependence of EL brightness have been reported. A study of the phosphorescence and thermoluminescence
of these phosphors is also carried out and it is observed that the trap-depth changes slowly with temperature and activator
concentration. An attempt has been made to calculate the trap depth by studying temperature dependence of EL brightness. The
results are reported and discussed. 相似文献
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Optical and electronic properties of crystalline silicon (c-Si) and amorphous silicon (a-Si) nanostructures are reviewed. The photoluminescence (PL) peak energies of c-Si and a-Si nanostructures are blueshifted from those of bulk c-Si and a-Si. The temperature dependence of the PL intensity is drastically improved in c-Si and a-Si nanostructures, and efficient luminescence from c-Si and a-Si nanostructures is observed at room temperature. The quantum confinement, spatial confinement, and surface effects on luminescence properties are summarized and the PL mechanism of silicon nanostructures is discussed. 相似文献
13.
研究了水热法合成的ZnS: Cu,Tm超细X射线发光粉及其光致发光(PL)和X射线激发发光(X-ray excited luminescence,XEL)光谱特性.200 ℃水热处理12 h直接合成样品的纳米晶粒径约15 nm,尺寸分布窄,分散性好,具有纯立方相的类球形结构.氩气保护下900 ℃退火1 h后的样品存在一定的团聚,但团聚后尺寸为200—600 nm,为超细X射线发光粉,此时样品为纯六方相的类球形为主的结构.所有样品的PL和XEL光谱均为宽带谱.水热法直接合成样品的XEL强度最强时,样品的Cu/Zn,Tm/Cu比值分别为3×10-4和2.在此比值条件下,900 ℃退火1 h样品的XEL发光最强,此时其两个峰值分别位于453,525 nm.发光强度增强的同时粒径很小,对提高成像系统分辨率非常有意义.通过比较PL光谱与XEL光谱特性,讨论了PL和XEL光谱的发光机理和其不同的激发机理.
关键词:
ZnS:Cu
Tm
水热法
X射线激发发光 相似文献
14.
I. N. Ogorodnikov V. A. Pustovarov A. V. Kruzhalov L. I. Isaenko M. Kirm G. Zimmerer 《Physics of the Solid State》2000,42(3):464-472
Results are reported of a coordinated investigation of the dynamics of electronic excitations in LiB3O5 and Li2B4O7 crystals by low-temperature luminescence VUV spectroscopy performed with subnano-second resolution under synchrotron photoexcitation. Data on the photoluminescence (PL) decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra obtained at 295 and 9.6 K are reported for the first time; the PL of the borates in the 3.5-eV region caused by radiative annihilation of self-trapped excitons (STE) has been established to have an intrinsic nature; the σ and π STE luminescence bands originating from singlet and triplet radiative transitions have been isolated; the shift of the STE σ band relative to the π band has been interpreted; the LBO recombination luminescence band has been isolated; and the creation and decay channels of relaxed and unrelaxed excitons in lithium borates are discussed. 相似文献
15.
金属有机化学气相沉积(MOCVD)方法制备InGaN/GaN多量子阱结构时,在GaN势垒层生长的N2载气中引入适量H2,能够有效改善阱/垒界面质量从而提升发光效率.本工作利用光致发光(PL)光谱技术,对蓝光激光器结构中的InGaN/GaN多量子阱的发光性能进行了精细的光谱学测量与表征,研究了通H2生长对量子阱界面的调控... 相似文献
16.
I. N. Ogorodnikov V. A. Pustovarov S. A. Yakovlev L. I. Isaenko S. A. Zhurkov 《Physics of the Solid State》2012,54(1):111-116
This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K2Al2B2O7 (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution
upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL)
decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K;
the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible
and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation
and decay of electronic excitations in K2Al2B2O7 crystals have been discussed. 相似文献
17.
《Superlattices and Microstructures》1994,16(4):387-390
Visible electroluminescence (EL) has been observed from a Au/native oxide/p-Si diode and has been studied in comparison with the EL from a Au/porous Si diode. Both diodes share similarities in current-voltage characteristics, EL spectra, and electrical input power dependence of integrated EL intensity. However, Au/porous Si exhibits quite strong photoluminescence (PL) while Au/native oxide/p-Si does not show any measurable PL. For the Au/native oxide/p-Si diode, when the native oxide layer was removed in 1% HF solution, no detectable EL has been observed. These experimental results indicate that the native oxide layer plays a key role in light emission from the Au/native oxide/p-Si diode, and show that the luminescence mechanism for Au/native oxide/p-Si diodes is similar to that for the Au/porous Si diode. This comparative study may aid in elucidation of the EL mechanism of porous silicon. 相似文献
18.
研究了在CdSe/ZnSe自组装量子点中CdSe量子点的发光随着激发光强度变化的特性。发现当激发强度(I)变化3个数量级的时候,量子点发光的峰位、峰形都没有发生明显的变化。通过公式L∝Ik(其中I是激发光强度,L是量子点发光强度,k是非线性系数)得到非线性系数k值。实验结果表明:在温度由21 K升高到300 K的过程中,k值随温度变化可以分为3个区域:当温度低于120 K时,k值接近于1;然后,随着温度升高,k值慢慢变小;最后,随温度进一步升高,k值由200 K时的0.946迅速减少到0.870。结合发光随温度变化的实验结果,确认在120 K以下发光主要来源于束缚激子复合。在温度由200 K升高到300 K的过程中,非线性系数的单调减小主要归因于随着温度的升高,发光部分来自于由自由电子或空穴到束缚态能级(FB)的复合。进一步通过分析量子点发光的积分强度随着温度的变化的实验结果,发现发光强度随温度升高而减弱的主要原因是材料中的缺陷或者位错等提供非辐射渠道。 相似文献
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根据X射线光电子能谱分析和选择性光致发光谱测试结果,探讨了Bi离子掺杂非晶二氧化硅薄膜的近红外发光来源。我们认为非晶二氧化硅薄膜中Bi离子的近红外发光来源于低价态Bi~+离子从轨道~3P_1层到~3P_0层的辐射复合跃迁和Bi~0从轨道~2D_(3/2)层到~4S_(3/2)层的辐射复合跃迁。此外,本文利用限制性晶化原理,通过在掺Bi二氧化硅薄膜中引入Au离子,实现了Bi离子相关的近红外发光峰位可调,荧光强度增大了300%。高分辨透射电子显微镜截面图片证实了非晶二氧化硅薄膜厚度约为90 nm以及不同尺寸、数密度Au量子点的形成。变温光致发光谱测试结果表明,部分Au离子可有效降低Bi离子掺杂非晶二氧化硅薄膜中羟基集团等非辐射复合中心密度。Bi离子掺杂非晶二氧化硅薄膜近红外发光来源的探讨以及通过Au量子点调控Bi离子近红外发光性质的讨论将有助于未来掺Bi发光材料的相关研究。 相似文献