Demonstration of ultra-high-resolution MFM images using Co90Fe10-coated CNT probes

We demonstrate ultra-high-resolution magnetic force microscopy images of perpendicular magnetic storage media using carbon nanotube probes coated by ferromagnetic Co₉₀Fe₁₀ films (20, 30, 40, and 50 nm). By optimizing ferromagnetic film thickness (effective tip diameter), we obtained best magnetic domain image with an 40 nm-Co₉₀Fe₁₀-coated tip (50 nm tip diameter) about a lateral detect density of 1200 k flux per inch on perpendicular magnetic storage medium, one of the highest resolutions in MFM imaging reported for this material system and structure. The observed dependence of tip dimension on signal contrast and image resolution was successfully explained by a theoretical analysis indicating that the signal contrast, along with the physical probe-tip dimension, should be taken into account to design magnetic probes tips for high-resolution magnetic force microscopy.     

Magnetic force microscopy signal of flux line above a semi-infinite type II-superconductor

We have examined a single flux line in the semi-infinite type-II superconductor. The stray magnetic field of the flux line has been calculated. We have found that the vertical force exerted on a magnetic force microscopy (MFM) tip from the flux line is measurable by currently existing MFM. Two types of magnetic tips were taken into consideration, solid and thin film tips. For example, with a Cobalt film of the thickness of 100 nm and 30 nm on a tip, we found a vertical force of 4*10^–10 N and 1.5*10^–10 N, respectively. The lateral force exerted on a tip by the flux line was also calculated. The lateral force must be small enough to prevent the flux line from becoming depinned.     

Micromagnetic study of effect of tip-coating microstructure on the resolution of magnetic force microscopy

The properties of a magnetic force microscopy (MFM) tip are very important for high-resolution magnetic imaging. In this work, micromagnetic models of tips are set up to study the effect of tip-coating microstructure, especially the randomness of anisotropy on tip edge and tip end, on the resolution of MFM. The effective coating height and the resolution potential of tips with various microstructures and magnetic properties have been characterized by investigating the obtained signals from high-density continuous granular thin film disk media with a bit size of 8×16 nm² and bit-patterned media with a pattern period p of 50 nm. The magnetic moment distribution at the tip end should be perpendicular to the sample to realize a ‘magnetically sharp’ tip, which explains further the improved resolution in the recent experimental reports. Tips with well-controlled grain structure and magnetic anisotropy of coating materials can be applied to both high-density thin film disk media and bit-patterned media.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Magnetic and magneto-optical studies on Zn1−xCrxTe (x=0.05) films grown on glass substrate

Zn_1−xCr_xTe (x=0.05) films were prepared by thermal evaporation onto glass substrates. X-ray diffraction (XRD) was used to determine the crystalline quality of the ZnTe:Cr film. Magnetic force microscopy (MFM) investigation has shown a non-uniform distribution of magnetic domains with an average size of 4 nm at room temperature. SQUID measurements have further shown that the non-uniform distribution of domains does not affect the room temperature ferromagnetism of this material. Electron spin resonance spectroscopy (ESR) was done to determine the Cr valence state in the ZnTe lattice. Magnetic circular dichroism (MCD) analysis was used to confirm the ZnCrTe phase contributing to the ferromagnetic behavior.     

Is MFM really useful?

The ill-posed linear inverse problems, characterised by Fredholm integral equations of the first kind, are encountered in many areas of science and technology. This type of problems present some loss of information under the inversion process. The loss of information often makes the inversion process very difficult. Magnetic force microscopy (MFM) is a technique where problems related to loss of information occur. Work is presented here to understand what can be measured by the magnetic force microscope. A simple model is constructed, where the magnetic tip is approximated by a point dipole. Given the force F() acting on the dipole tip, we attempt to determine the magnetization distributlon in a thin ferromagnetic film, M(). This calculation should be interesting due to the rapidiy growing interest in magnetic thin films and magnetic multilayers. Received 3 December 2001 and Received in final form 11 March 2002     

Hard disk magnetic domain nano-spatial resolution imaging by using a near-field scanning microwave microscope with an AFM probe tip

A near-field scanning microwave microscope (NSMM) incorporating an atomic force microscope (AFM) probe tip was used for the direct imaging of magnetic domains of a hard disk under an external magnetic field. We directly imaged the magnetic domain changes by measuring the change of reflection coefficient S₁₁ of the NSMM at an operating frequency near 4.4 GHz. Comparison was made to the magnetic force microscope (MFM) image. Using the AFM probe tip coupled to the tuning fork distance control system enabled nano-spatial resolution. The NSMM incorporating an AFM tip offers a reliable means for quantitative measurement of magnetic domains with nano-scale resolution and high sensitivity.     

Effect of swift heavy ion irradiation on dilute Fe-doped Sb0.95Se0.05 magnetic semiconductor

A thin film of dilute Fe (0.008)-doped Sb_0.95Se_0.05 alloy was grown on silicon substrate using the thermal evaporation technique. This film was irradiated with swift heavy ions (SHIs) Ag⁺¹⁵ having 200?MeV energy at ion fluences of 1?×?10¹² and 5?×?10¹² ions per cm², respectively. The thickness of the thin film was ～500?nm. We study the effect of irradiation on structural, electrical, surface morphology and magnetic properties of this film using grazing angle XRD (GAXRD), DC resistivity, atomic force microscopy (AFM) and magnetic force microscopy (MFM), respectively. GAXRD suggests that no significant change is observed in this system due to SHI irradiation. The average crystallite size increases with fluence, whereas the AFM image shows the rms roughness decreases due to irradiation with respect to the un-irradiated thin film. The MFM image shows that the magnetic interaction in irradiated film decreases due to the irradiation effect. Although the un-irradiated sample shows metal to semiconducting transition, but after irradiation with fluence of 5?×?10¹² ions per cm², the sharpness of the metal to semiconducting phase transition is observed to increase dramatically at ～300?K. This characteristic of the thin film makes it a promising candidate for an electrical switching device after irradiation.     

Characterization of SnO2/Pb2CrO5 thin film/metal photovoltaic device

The photovoltaic behavior in a design of SnO₂/Pb₂CrO₅ thin film/metal (Au or Al) is described as functions of light intensity and wavelength for two different illumination directions. The Pb₂CrO₅ thin film in each device is formed over the SnO₂ coated glass substrate by an electron-beam evaporation technique. When illuminated from the metal side, the device with Au or Al shows the positive or the negative photovoltage, respectively. For the illumination from the SnO₂ side, the device with Au has the negative photovoltage at the short wavelength, and the positive one at the longer, while the device with Al has the negative photovoltage at both wavelength regions. These photovoltaic devices have two junctions at both sides of the Pb₂CrO₅ thin film. The band model of each device is also discussed.     

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy （CAFM）. This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.     

Temperature evolution of anisotropic stress induced highly ordered stripe magnetic domains in La0.7Sr0.3MnO3 thin film on (110) NdGaO3 substrate

Highly ordered ferromagnetic (FM) domain patterns with out-of-plane magnetization have been observed in La_0.7Sr_0.3MnO₃ (LSMO) thin film on (110) NdGaO₃ (NGO). Crystal structure and strain state analyses show that this remarkable domain pattern originates from the in-plane anisotropic stress induced by the substrate. Magnetic force microscope (MFM) images at different temperatures show that the FM domain contrast gradually decreases upon heating and disappears around the transition temperature. The root mean square (RMS) of the MFM images coincides with the resistivity measurement, suggesting that the change in resistivity with temperature is mainly due to carrier scattering by thermal spin fluctuation.     

Effects of Mn doping on BaTiO3 thin films grown on highly oriented pyrolytic graphite substrates

We report multiferroelectric properties of Mn-doped BaTiO₃ (MBTO) thin films on highly oriented pyrolytic graphite (HOPG) substrates. The MBTO thin films were grown on the HOPG substrate by pulse laser deposition. For comparison purpose, undoped BaTiO₃ (BTO) thin films were also prepared under same experimental conditions. The BTO and MBTO thin films were polycrystalline, indicating that the MBTO thin film has better crystallinity than the BTO thin film. The leakage current of the MBTO thin film was reduced due to the Mn doping substitution. In addition, the MBTO thin film exhibited better than the BTO thin film in ferroelectric and magnetic behaviors. We suggest that the Mn doping bring about the improvements of ferroelectric and ferromagnetic properties of the BTO thin films. Based on atomic force microscopy (AFM) and conducting AFM (CAFM) studies, the grain size of MBTO thin film was much larger than that of BTO thin film.     

Quantitative analysis of magnetization reversal in patterned strip wire by magnetic force microscopy

Magnetic force microscopy (MFM) was used to investigate the magnetization reversal process in a patterned strip wire of permalloy thin film. The magnitude of the phase-shift of tapping mode MFM changed with the varying interactive magnetic force between the magnetic tip and the sample. By analyzing the change in values of the phase-shift, the behaviors of magnetization reversal of different local regions in a patterned strip wire can be quantitatively analyzed. The intensity of the phase-shift in the wider end is stronger than that in the narrower one. In contrast, due to a strong anisotropic effect, the coercive force in the narrower end (9 Oe) is larger than that in the wider one (8 Oe). Therefore, the H_c in the neck section could become strongly affected by the competition of the head-to-tail magnetic configurations in the two parts of the strip wire, and this results in a small H_c in the neck section. In addition, in a simple neck shape connection in a strip NiFe wire, a single domain configuration can be easily changed to a two single domain magnetic configuration.     

Temperature dependent induced spin polarization in Cr2O3 overlayers on epitaxial CrO2 films

Spin-resolved inverse photoemission investigations show that the native Cr₂O₃ surface is antiferromagnetically coupled to the CrO₂ thin film substrate, with a temperature dependent induced polarization. The Cr₂O₃ exhibits the characteristic behavior of a rigid band/spin mixing behavior (non-Stoner) of a local moment paramagnet. The strong shifts of the conduction band edge from room temperature to low temperature suggests that the extent of the induced polarization of the Cr₂O₃ oxide surface, by the CrO₂ substrate, may be partly related to Coulomb blockade effects identified in CrO₂/Cr₂O₃/CrO₂ junctions.     

Direct observation of room temperature magnetism in (In,Mn)As thin films by magnetic force microscopy

Variable-temperature magnetic force microscopy (MFM) has been performed over the temperature range of 298-348 K on ferromagnetic (In,Mn)As thin films deposited by metal-organic vapor phase epitaxy (MOVPE). Ferromagnetic domains were observed with submicron resolution in both single and two phase (In,Mn)As films, persisting up to 328 K. Isolated cylindrical domains ranging from 100 to 350 nm in diameter with densities of 2-5 × 10⁸ cm⁻² were observed in phase pure films. Longer range magnetic order, in the form of ribbon-like domains up to 1 μm in length, are present in the regions between the cylindrical domains. Two phase (In,Mn)As films produced a well-resolved complex domain structure consisting of 180° parallel and antiparallel domains. Excellent agreement between the temperature dependence of the relative magnetization obtained by MFM and superconducting quantum interference device measurements was observed.     

Domain observation and transition from giant magnetoresistance to anisotropy magnetoresistance in Ag1−x(Ni0.8Co0.2)x granular films

A series of Ag_1−x(Ni_0.8Co_0.2)_x granular film samples were prepared using an ion-beam cosputtering technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were performed to investigate the microstructure of these samples. The results measured using a vibrating sample magnetometer (VSM) show a gradual change from superparamagnetism to ferromagnetism as x increases in these samples. Magnetoresistance was measured using a conventional four terminal method at room temperature. As x increases, a transition from giant magnetoresistance (GMR) to anisotropic magnetoresistance (AMR) has been observed. The stripe-type domains have been observed using magnetic force microscopy (MFM) in the high x samples, and the domains gradually disappear as x decreases. It suggests that the transition from GMR to AMR may result from intergranular interaction (not only dipolar) in the samples as x increases.     

Experimental determination of ultra-sharp stray field distribution from a magnetic vortex core structure

The fine magnetic stray field from a vortex structure of micron-sized permalloy (Ni₈₀Fe₂₀) elements has been studied by high-resolution magnetic force microscopy. By systematically studying the width of the stray field gradient distribution at different tip-to-sample distances, we show that the half-width at half-maximum (HWHM) of the signal from vortex core can be as narrow as ∼21 nm at a closest tip-to-sample distance of 23 nm, even including the convolution effect of the finite size of the magnetic tip. a weak circular reverse component is found around the center of the magnetic vortex in the measured magnetic force microscope (MFM) signals, which can be attributed to the reverse magnetization around the vortex core. Successive micromagnetic and MFM imaging simulations show good agreements with our experimental results on the width of the stray field distribution.     

The photoconductive effect in Pb2CrO5 thin films prepared by an electron-beam evaporation technique

Photoconductivity in Pb₂CrO₅ thin film prepared by an electron-beam evaporation technique is described. Crystallographically, three kinds of thin films are fabricated which depend on substrate temperature. A sample showing a similar x-ray diffraction profile to the evaporation source material gives the highest photoconductive response. Light illumination from the glass substrate onto the sample improves photoconductivity. A pair of interdigital electrodes is more effective than a pair of planar electrodes on the photoconductive measurement. A band gap energy level of Pb₂CrO₅ thin film is around 2.2–2.4 eV as a result of the spectral photoconductive response.     

Shape instability in out of equilibrium magnetic domains observed in ultrathin magnetic films with perpendicular anisotropy

The magnetic configurations induced by the growth process in a thin film with perpendicular magnetisation have been observed by magnetic force microscopy (MFM). The FePd thin film has been grown by molecular beam epitaxy. A high uniaxial chemical ordering of the alloy into the tetragonal L1₀ structure induces the development of a large perpendicular anisotropy. As the growth process is performed below the Curie temperature of the FePd alloy, domain nucleation occurs during the growth process. The magnetic configuration has been imaged in the as grown state. As the equilibrium size of the magnetic domains decreases when the thickness of the layer increases, the domains obtained from spontaneous nucleation at the beginning of the growth of the thin film are submitted to very large strains as the layer thickness increases. At low thicknesses (low strains), the domain wall instability gives rise to an undulation of the domain walls. Thereafter, it leads to the formation of well-defined magnetic fingers, thus giving birth to the coexistence of two length scale in the domain structure. A quantitative estimation of the strain leading to the fingering instability is obtained. Last, the implications of these observations on the kinetic of domain wall distortion in ultrathin layers are discussed.     

Piezoresponse force microscopy and magnetic force microscopy characterization of γ-Fe2O3-BiFeO3 nanocomposite/Bi3.25La0.75Ti3O12 multiferroic bilayers

The multiferroic behavior of epitaxial γ-Fe₂O₃-BiFeO₃ (composite)/Bi_3.25La_0.75Ti₃O₁₂ bi-layered heterostructures grown on SrRuO₃/SrTiO₃ (1 1 1) substrates has been studied using piezoresponse force microscopy, magnetic force microscopy and magnetometry. The ferroelectric domain structure is ascribed to the BiFeO₃ phase while the magnetism originates in the γ-Fe₂O₃ phase of the composite layer. Our studies demonstrate the presence and switching of magnetic and ferroelectric domains within the same area of the sample. This confirms the presence of multiferroic behavior at the nanoscale in our γ-Fe₂O₃-BiFeO₃ nanocomposite thin films.