Synthesis, properties, and ambipolar organic field-effect transistor performances of symmetrically cyanated pentacene and naphthacene as air-stable acene derivatives

5,12-Dicyanonaphthacene and 6,13-dicyanopentacene have been synthesized for the first time. The LUMO and HOMO levels are deepened as predicted and fabricated organic field-effect transistors (OFETs) showed ambipolar responses with carrier mobilities of 10(-3) cm(2)/V·s.     

Vapor phase self-assembly of molecular gate dielectrics for thin film transistors

Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.     

Synthesis,characterization, and tunable semiconducting properties of aza-BODIPY derived polycyclic aromatic dyes

Azadipyrromethene derived polycyclic aromatic complexes(HBPs) containing thirteen fused rings have been synthesized,which show highly selective intense absorption in the near infrared spectrum(NIR) region with high photo-and thermo-stability.The periphery alkoxy and alkyl substituents greatly affect their molecular packing structures in thin films and their thin film transistor performances. With the simple changes of the alkyl substituents, the packing structures changed from discrete-grain with H-aggregation type absorption to lamellar packing with J-aggregation type absorption, and the semiconducting properties were modulated from p-type to interesting ambipolar-type in solution-processed organic field effect transistors(OFETs) with hole and electron mobilities reaching to 0.42 and 0.17 cm~2 V~(-1) s~(-1), respectively.     

High-performance organic field-effect transistors: molecular design, device fabrication, and physical properties

In the past decade, tremendous progress has been made in organic field-effect transistors (OFETs). Their real applications require further development of device performance. OFETs consist of organic semiconductors, dielectric layers, and electrodes. Organic semiconductors play a key role in determining the device characteristics. The properties of the organic semiconductors, such as molecular structure and packing, as well as molecular energy levels, can be properly controlled by molecular design. Therefore, we designed and synthesized a series of organic molecules. The synthesized organic semiconductors exhibit excellent field-effect properties due to strong intermolecular interactions and proper molecular energy levels. Meanwhile, the influence of the device fabrication process, organic semiconductor/dielectric layer interface, and organic layer/electrode contact on the device performance was investigated. A deep understanding of these factors is helpful to improve field-effect properties. Furthermore, single-crystal field-effect transistors are highlighted because the single-crystal-based FETs can provide an accurate conducting mechanism of organic semiconductors and higher device performance as compared with thin film FETs.     

2,6-Diarylnaphtho[1,8-bc:5,4-b'c']dithiophenes as new high-performance semiconductors for organic field-effect transistors

A series of 2,6-diaryl-substituted naphtho[1,8-bc:5,4-b'c']dithiophene derivatives 2-6, whose aryl groups include 5-hexyl-2-thienyl, 2,2'-bithiophen-5-yl, phenyl, 2-naphthyl, and 4-biphenylyl, was synthesized by the palladium-catalyzed Suzuki-Miyaura coupling and utilized as active layers of organic field-effect transistors (OFETs). All devices fabricated using vapor-deposited thin films of these compounds showed typical p-type FET characteristics. The mobilities are relatively good and widely range from 10(-4) to 10(-1) cm2 V(-1) s(-1), depending on the substituent groups. Among them, the mobilities of the devices using films of 3-5 tend to increase with the increasing temperature of the Si/SiO2 substrate during film deposition. In particular, the device based on the naphthyl derivative 5, when fabricated at 140 degrees C, marked a high mobility of 0.11 cm2 V(-1) s(-1) with an on/off ratio of 10(5), which is a top class of performance among organic thin-film transistors. Studies of X-ray diffractograms (XRDs) have revealed that the film of 4 and 5 is composed of two kinds of crystal grains with different phases, so-called "single-crystal phase" and "thin film phase", and that the proportion of the thin film phase increases with an increase of the substrate temperature. In the thin film phase the assembled molecules stand nearly upright on the substrate in such a way as to be favorable to carrier migration.     

吲哚方酸菁半导体在场效应晶体管中的应用

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质, 通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式, 并在Si/SiO₂基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件. 通过对器件性能与沟道形态的研究, 我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变, 从而使薄膜晶体管的迁移率从10^-5 cm²?V^-1?s^-1量级提高到10^-3 cm²?V^-1?s^-1量级. 顶接触结构单晶器件获得了7.8×10^-2 cm²?V^-1?s^-1的迁移率. 未封装的方酸菁晶体管在大气中也表现出较好的稳定性.     

High-performance and multifunctional organic field-effect transistors

Organic field-effect transistors(OFETs) refer to field-effect transistors that use organic semiconductors as channel materials. Owing to the advantages of organic materials such as solution processability and intrinsic flexibility, OFETs are expected to be applicable in emergent technologies including wearable electronics and sensors, flexible displays, internet-of-things, neuromorphic computing, etc. Improving the electrical performance and developing multifunctionalities of OFETs are two major...     

2,7-diphenyl[1]benzoselenopheno[3,2-b][1]benzoselenophene as a stable organic semiconductor for a high-performance field-effect transistor

[1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO(2) substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 degrees C, and 100 degrees C) in a "top-contact" configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm(2) V(-1) s(-1) and current on/off ratios of approximately 10(6). This high performance was essentially maintained over 3000 continuous scans between V(g) = +20 and -100 V and reproduced even after storage under ambient laboratory conditions for at least one year.     

Progresses in organic field-effect transistors and molecular electronics

In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs). In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics. Future prospects and investigations required to improve the OFET performance are also involved. __________ Translated from Huaxue Tongbao (Chemistry), 2006, 69(6) (in Chinese)     

Optical absorption and emission properties of fluoranthene, benzo[k]fluoranthene, and their derivatives. A DFT study

Fluoranthene and benzo[k]fluoranthene-based oligoarenes are good candidates for organic light-emitting diodes (OLEDs). In this work, the electronic structure and optical properties of fluoranthene, benzo[k]fluoranthene, and their derivatives have been studied using quantum chemical methods. The ground-state structures were optimized using the density functional theory (DFT) methods. The lowest singlet excited state was optimized using time-dependent density functional theory (TD-B3LYP) and configuration interaction singles (CIS) methods. On the basis of ground- and excited-state geometries, the absorption and emission spectra have been calculated using the TD-DFT method with a variety of exchange-correlation functionals. All the calculations were carried out in chloroform medium. The results show that the absorption and emission spectra calculated using the B3LYP functional is in good agreement with the available experimental results. Unlikely, the meta hybrid functionals such as M06HF and M062X underestimate the absorption and emission spectra of all the studied molecules. The calculated absorption and emission wavelength are more or less basis set independent. It has been observed that the substitution of an aromatic ring significantly alters the absorption and emission spectra.     

1,2,5,6-Naphthalenediimide-based conjugated copolymers linked by ethynyl units

Two copolymers of P1 and P2 comprising benzothiadiazole, 1,4-bis(dodecyloxy)-benzene units were synthesized by Sonogashira coupling polymerization based on ethynyl-linked 1,2,5,6-naphthalenediimide.Their thermal, optical,electrochemical as well as charge transport properties were studied. Bottom-gate top-contact organic field-effect transistors(OFETs) measurements of P1 and P2 thin films showed different charge transport behaviors. P1 displayed pure electron transport behaviors in OFETs with electron mobility up to 10~(-3 )cm~2·V~(-1)·s~(-1), while P2 exhibited hole transport features. The molecular structure analysis revealed that the structure of P1 has the acceptor-linker-acceptor′(A-L-A′) characteristic, and P2 possesses the donor-linker-acceptor(D-L-A) structure feature. The results demonstrate that different molecular structures lead them to have distinct charge transport behaviors. In particular, the first pure electron transport copolymer in OFETs based on 1,2,5,6-naphthalenediimide is achieved.     

含硒杂环萘二酰亚胺衍生物的合成及其场效应性能研究

萘二酰亚胺(NDI)类化合物由于其较好的平面性和较强的接受电子能力,被广泛应用于有机场效应晶体管(OFETs)和有机太阳能电池中(OSCs)。然而,高迁移率的n型和双极性NDI类半导体材料较少。基于此,本文设计合成了核位硒杂环修饰的NDI衍生物,通过引入1,2-二硒苯和1,2-二硒萘基团,对其能级进行了有效的调控,获得了两个新型的窄带隙NDI衍生物。通过溶液旋涂法,制备了两种材料的底栅底接触场效应晶体管器件,二者在空气中都表现出n型半导体特性,退火温度为120℃时性能达到最优,分别为1×10~(-3)cm~2·V~(-1)·s~(-1)(4)和5×10~(-3)cm~2·V~(-1)·s~(-1)(5)。同时,通过原子力显微镜和X射线衍射对材料薄膜的退火过程进行了研究。     

Controlled one-dimensional nanostructures in poly(3-hexylthiophene) thin film for high-performance organic field-effect transistors

With the aim of improving the field-effect mobilities in poly(3-hexylthiophene) (P3HT) thin film transistors, we controlled the nanostructures of P3HT thin film by changing the solvent vapor pressure in a spin-coating chamber during solidification. The transistors with P3HT thin films spin-coated under a high solvent vapor pressure (56.5 KPa), showing the one-dimensional nanowire morphologies, resulted in the relatively high field-effect mobilities (0.02 cm2/(V.s)) that are typically more than 1 order of magnitude higher than those prepared under ambient conditions, showing the featureless morphologies. This can be attributed to the higher solvent vapor pressure during film formation, providing the solvent is allowed to evaporate slowly and the degree of ordering within the P3HT crystalline domains is dramatically improved.     

Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds

We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to approximately 500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X 3Si-R-SiX 3 (R = -C 6H 12- and X = Cl, OAc, NMe 2, OMe, or R = -C 2H 4-O-C 2H 4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X 3Si-R-SiX 3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures ( approximately 110 degrees C) and adhere tenaciously to a variety of FET gate contact materials such as n (+)-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10 (-7) approximately 10 (-8) A cm (-2) at 2.0 MV/cm) and tunable capacitance values (from 5 to approximately 350 nF cm (-2)). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.     

The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative

A naphthalenediimide derivative (1) was designed and synthesized as a halogen bonding (XB) donor that is capable of forming complementary XBs with 2,2-dipyridine or 2,2-bipyrimidine acceptor. The XB interactions in the complexes (1/2,2-dipyridine and 1/2,2-bipyrimidine) significantly improved their OFET performance relative to the devices based on pure 1, with the average electron mobility increased more than doubled.     

Trifluoromethyltriphenodioxazine: air-stable and high-performance n-type semiconductor

Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.     

小分子场效应晶体管

近几年来，作为新一代半导体晶体管的有机场效应晶体管(OFET)在制备技术和器件性能上都取得了很大的进步,并引起了有机半导体领域研究人员的广泛关注。本文主要介绍了常见的小分子材料在场效应晶体管中的应用，并对几种有机小分子材料的结构和场效应性能做了总结。     

Highly responsive biosensors based on organic field-effect transistors under light irradiation

High responsivity and sensitivity play essential roles in the development of organic field-effect transistors (OFETs)-based biosensors with regard to biological detections, particularly for disease diagnosis. Nonetheless, how to design a biosensor which improves these two outstanding properties while achieving low cost, easy processing, and time saving is a daunting challenge. Herein, a novel biosensor based on OFET with copolymer thin film, whose surface is illuminated with a suitable light beam is reported. This film can be used as both an organic semiconductor material and as a photoelectric active material. Due to amplification of signals as a result of the film’s strong response to light, the biosensor possesses higher responsivity and sensitivity compared to dark condition and even realizes a maximum responsivity of up to 10³ for alpha-fetoprotein (AFP) detection. The simple combination of light and transistor builds a bridge between photoelectric effect and biological system. In addition, the emergence of more excellent photoelectric active materials is expected to pave a way for ultrasensitive bio-chemical diagnostic tools.     

Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors

Poly(3-hexylthiophene)(P3 HT) thin films, obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP) before and after thermal annealing(TA), and the corresponding devices were prepared to unravel the microstructure-property relationship, which is of great importance for the development of organic electronics. When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm~2·V~(–1)·s~(–1) was achieved. This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors. The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra, grazing incident X-ray diffraction(GIXD), and atomic force microscopy(AFM). The impressive mobility was attributed to the high crystallinity and ordered molecule packing, which stem from the synergistic effects of SVASP and thermal annealing.     

Organic semiconductors for solution-processable field-effect transistors (OFETs)

The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.