VUV spectroscopy of Ce<Superscript>3+</Superscript>-doped Na<Subscript>0.4</Subscript>Lu<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript> single crystals

The short-wave transmission spectrum of Na_0.4Lu_0.6F_2.2 with the visible/ultraviolet transmission edge of 8 eV was studied. Absorption spectra of the 4f—5d transitions of the Ce³⁺ ion in the region of 4–8 eV were studied in Ce³⁺-doped Na_0.4Lu_0.6F_2.2 single crystals. Luminescence spectra in the ultraviolet and visible spectral regions, luminescence decay kinetics and reflection and luminescence excitation spectra in the visible/ultraviolet and ultraviolet regions (4–20 eV) were investigated at helium and room temperatures.     

Luminescence and thermally stimulated recombination processes in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>:Ce<Superscript>3+</Superscript> crystals

The luminescence and thermally stimulated recombination processes in lithium borate crystals Li₆Gd(BO₃)₃ and Li₆Gd(BO₃)₃:Ce have been studied. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence), temperature dependences of the intensity of steady-state X-ray luminescence (XL), and thermally stimulated luminescence (TSL) spectra of these compounds have been investigated in the temperature range of 90–500 K. The intrinsic-luminescence 312-nm band, which is due to the ⁶ P _J → ⁸ S _7/2 transitions in Gd³⁺ matrix ions, dominates in the X-ray luminescence spectra of these crystals; in addition, there is a wide complex band at 400–420 nm, which is due to the d → f transitions in Ce³⁺ impurity ions. It is found that the steady-state XL intensity in these bands increases several times upon heating from 100 to 400 K. The possible mechanisms of the observed temperature dependence of the steady-state XL intensity and their correlation with the features of electronic-excitation energy transfer in these crystals are discussed. The main complex TSL peak at 110–160 K and a number of minor peaks, whose composition and structure depend on the crystal type, have been found in all crystals studied. The nature of the shallow traps that are responsible for TSL at temperatures below room temperature and their relation with defects in the lithium cation sublattice are discussed.     

Luminescence of excitons and antisite defects in Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce³⁺ ion) in phosphors based on Lu₃Al₅O₁₂:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the Lu _Al ³⁺ type and vacancy-type defects. The luminescence band with λ_max = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λ_max = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λ_max = 253.5 nm occurs predominantly near Lu _Al ³⁺ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λ_max = 325 nm (τ = 540 ns), which is excited in the band with λ_max = 175 nm, is due to the radiative recombination of electrons with holes localized near Lu _Al ³⁺ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce³⁺ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce³⁺ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce³⁺ ions with λ_max = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce³⁺ ions is significantly smaller due to a low concentration of these types of defects.     

Luminescence properties of phosphors based on Tb<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> (TbAG) terbium-aluminum garnet

The processes of excitation energy transfer in phosphors based on single-crystal Tb₃Al₅O₁₂:Ce (TbAG:Ce) and Tb₃Al₅O₁₂:Ce,Eu (TbAG:Ce,Eu) garnet films have been investigated. These films are considered to be promising materials for screens for X-ray images and luminescence converters of blue LED radiation. The conditions for excitation energy transfer from the matrix (Tb³⁺ cations) to Ce³⁺ and Eu³⁺ ions in TbAG:Ce and TbAG:Ce,Eu phosphors have been analyzed in detail. It is established that a cascade process of excitation energy transfer from Tb³⁺ ions to Ce³⁺ and Eu³⁺ ions and from Ce³⁺ ions to Eu³⁺ ions is implemented in TbAG:Ce,Eu via dipole-dipole interaction and through the Tb³⁺ cation sublattice.     

VUV 5<Emphasis Type="Italic">d</Emphasis>-4<Emphasis Type="Italic">f</Emphasis> luminescence of Gd<Superscript>3+</Superscript> and Lu<Superscript>3+</Superscript> ions in the CaF<Subscript>2</Subscript> host

The first observation and characterization of Lu³⁺ 4f ¹³5d-4f ¹⁴ luminescence from the CaF₂: Lu³⁺ crystal are reported, and the multisite structure in the spectra of Ce³⁺, Gd³⁺, and Lu³⁺ ions in the CaF₂ host is analyzed with the high-resolution VUV spectroscopy technique using synchrotron radiation. It is shown that vibronic structure in the emission and excitation spectra of interconfigurational transitions in Gd³⁺ and Lu³⁺ ions doped into CaF₂ differs from that observed for Ce³⁺ ions entering mainly at the tetragonal (C _4v ) sites. However, the exact types of sites in which the Gd³⁺ and Lu³⁺ ions reside in a CaF₂ lattice cannot be identified using only the obtained experimental spectroscopid data. The text was submitted by the authors in English.     

Nonradiative relaxation of photoexcited O<Stack><Subscript>1</Subscript><Superscript>0</Superscript></Stack> centers in glassy SiO<Subscript>2</Subscript>

The processes involved in the excited-state relaxation of hole O ₁ ⁰ centers at nonbridging oxygen atoms in glassy SiO₂ were studied using luminescence, optical absorption, and photoelectron emission spectroscopy. An additional nonradiative relaxation channel, in addition to the intracenter quenching of the 1.9-eV luminescence band, was established to become operative at temperatures above 370 K. This effect manifests itself in experiments as a negative deviation of the temperature-dependent luminescence intensity from the well-known Mott law and is identified as thermally activated external quenching with an energy barrier of 0.46 eV. Nonradiative transitions initiate, within the external quenching temperature interval, the migration of excitation energy, followed by the creation of free electrons. In the final stages, this relaxation process becomes manifest in the form of spectral sensitization of electron photoemission, which is excited in the hole O ₁ ⁰ -center absorption band.     

On the Luminescence of Ce<Superscript>3+</Superscript>, Eu<Superscript>3+</Superscript>, and Tb<Superscript>3+</Superscript> in Novel Borate LiSr<Subscript>4</Subscript>(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>

This paper reports on the photoluminescence (PL) and time-resolved properties of Ce³⁺, Eu³⁺, and Tb³⁺ in novel LiSr₄(BO₃)₃ powder phosphors. Ce³⁺ shows an emission band peaking at 420 nm under 350-nm UV excitation. Energy transfer from Ce³⁺ to Mn²⁺ takes place in the co-doped samples. Eu³⁺ shows red emission under near UV excitation. LiSr₄(BO₃)₃:Eu³⁺ phosphor could be a suitable candidate for phosphor-converted solid state lighting. The luminescence lifetime is 2.13 ms for Eu³⁺ in LiSr₄(BO₃)₃:0.001Eu³⁺. As Eu³⁺ concentration increasing, the decay curves deviate from exponential behavior. Tb³⁺ shows the strongest ⁵D₄→⁷ F₅ emission line at 540 nm. Decay curves of ⁵D₄→⁷ F₅ and ⁵D₃→⁷ F₅ emission with different Tb³⁺ concentrations were also measured. Cross-relaxation process is discussed based on the decay curves.     

Processes of the excitation energy migration and transfer in Ce-doped alkali gadolinium phosphates studied with time-resolved photoluminescence spectroscopy technique

Spectral-kinetic characteristics of Gd³⁺ and Ce³⁺ luminescence from a series of Ce³⁺-doped alkali gadolinium phosphates of MGdP₄O₁₂ type (M=Li, Na, Cs) have been studied within 4.2-300 K temperature range using time-resolved luminescence spectroscopy techniques. The processes of energy migration along the Gd³⁺ sub-lattice and energy transfer between the Gd³⁺ and Ce³⁺ ions have been investigated. Peculiarities of these processes have been compared for MGdP₄O₁₂ phosphate hosts with different alkali metal ions. A contribution of different levels from the ⁶P_j multiplet of the lowest Gd³⁺ excited state into the energy migration and transfer processes has been clarified. The phonon-assisted occupation of high-energy ⁶P_{5/2, 3/2} levels by Gd³⁺ in the excited ⁶P_j state has been revealed as a shift of Gd³⁺⁶P_j→⁸S_7/2 emission into the short-wavelength spectral range upon the temperature increase. The relaxation of excited Gd³⁺ via phonon-assisted population of Gd³⁺⁶P_5/2 level (next higher one to the lowest excited ⁶P_7/2) is supposed to be responsible for the rise in probability of energy migration within the Gd³⁺ sub-lattice initiating the Gd³⁺→Ce³⁺ energy transfer at T<150 K, whereas further intensification of Gd³⁺→Ce³⁺ energy transfer at T>150 K is explained by the increase in probability of Gd³⁺ relaxation into the highest ⁶P_3/2 level of the ⁶P_j multiplet. An efficient reversed Ce³⁺→Gd³⁺ energy transfer has been revealed for the studied phosphates at 4.2 K.     

PL Properties of Sr<Subscript>2</Subscript>CeO<Subscript>4</Subscript> With Eu<Superscript>3+</Superscript> and Dy<Superscript>3+</Superscript> for Solid State Lighting Prepared by Precipitation Method

Photoluminescence studies of pure and Dy³⁺, Eu³⁺ doped Sr₂CeO₄ compounds are presented by oxalate precipitation method for solid state lighting. The prepared samples also characterized by XRD, SEM (EDS) and FTIR spectroscopy. The pure Sr₂CeO₄ compound displays a broad band in its emission spectrum when excited with 280 nm wavelength, which peaks centered at 488 nm, which is due to the energy transfer between the molecular orbital of the ligand and charge transfer state of the Ce⁴⁺ ions. Emission spectra of Sr₂CeO₄ with different concentration of Dy³⁺ ions under near UV radiation excitation, shows that intensity of luminescence spectra is found to be affected by Dy³⁺ ions, and it increases with adding some percentages of Dy³⁺ ions. The maximum doping concentration for quenching is found to be Dy³⁺?=?0.2 mol % to Sr²⁺ions. The observed broad spectrum from 400 to 560 nm is mainly due to CT transitions in Sr₂CeO₄ matrix and some fractional contribution of transitions between ⁴F_9/2 → ⁶H_15/2 of Dy³⁺ ions. Secondly the effect of Eu³⁺ doping at the Sr²⁺ site in Sr₂CeO₄, have been studied. The results obtained by doping Eu³⁺ concentrations (0.2 mol% to 1.5 mol%), the observed excitation and emission spectra reveal excellent energy transfer between Ce⁴⁺ and Eu³⁺. The phenomena of concentration quenching are explained on the basis of electron phonon coupling and multipolar interaction. This energy transfer generates white light with a color tuning from blue to red, the tuning being dependent on the Eu³⁺ concentration. The results establish that the compound Sr₂CeO₄ with Eu³⁺?=?1 mol% is an efficient “single host lattice” for the generation of white lights under near UV-LED and blue LED irradiation. The commission internationale de I’Eclairage (CIE) coordinates were calculated by Spectrophotometric method using the spectral energy distribution of prepared phosphors.     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

Luminescence characteristics of energy transfer between Ce<Superscript>3+</Superscript> and Eu<Superscript>2+</Superscript> in NaMgPO<Subscript>4</Subscript> phosphor

Powder samples of NaMgPO₄ doped with Eu²⁺ and Ce³⁺ were prepared and their photoluminescence spectra were systemically studied. Energy transfer from Ce³⁺ to Eu²⁺ in NaMgPO₄ phosphor was observed by investigating the optical properties from photoluminescence spectra in Eu²⁺ or Ce³⁺ singly doped and Eu²⁺–Ce³⁺ codoped sodium magnesium orthophosphates, NaMgPO₄. The enhancement of UV excitation is attributed to energy transfer from Ce³⁺ to Eu²⁺, and Ce³⁺ plays a role as a sensitizer. Ce³⁺–Eu²⁺ codoped NaMgPO₄ phosphors in which Eu²⁺ can be efficiently excited by 390 nm are potential candidates for phosphor-converted LEDs.     

Photoluminescence of nanostructured Zn<Subscript>2</Subscript>SiO<Subscript>4</Subscript>:Mn<Superscript>2+</Superscript> ceramics under UV and VUV excitation

The photoluminescence of Zn₂SiO₄:Mn²⁺ ceramics with a particle size of 120 ± 10 nm, which is excited in the range of 3.5–5.8 eV and subjected to synchrotron radiation with photon energies of up to 20 eV, is investigated. Nanoscale Zn₂SiO₄:Mn²⁺ ceramics possesses intense luminescence with a maximum of 2.34 eV, the position and half-width of the band are independent of the excitation energy. It is found that the photoluminescence at 2.34 eV decays nonexponentially upon ultraviolet excitation. In the case of nanoscale ceramics is irradiated by vacuum ultraviolet, an additional photoluminescence-excitation channel is likely to occur due to interaction of band states and intrinsic vacancy-like defects of the Zn₂SiO₄ matrix.     

Study of spectroscopic characteristics of holmium-doped double sodium-yttrium fluoride crystals Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Ho<Superscript>3+</Superscript>

We have grown crystals Na_0.4Y_0.6F_2.2:Ho³⁺ (NYF:Ho³⁺) by the Bridgman-Stockbarger method. The optical spectra and luminescence kinetics of NYF:Ho³⁺ crystals have been studied. Based on the analysis of low-temperature absorption spectra, we determine the structure of the Stark splitting of holmium levels in NYF:Ho³⁺ crystals. From absorption spectra examined at T = 300 K, we calculate absorption cross-section spectra and oscillator strengths of transitions from the ground state of holmium to excited multiplets. We show that the absorption spectra of NYF:Ho³⁺ crystals consist of broad bands that lie in the UV, visible, and near-IR ranges. The most intense bands are observed in the visible range, they correspond to transitions ⁵ I ₈ → (⁵ F ₁, ⁵ G ₆) and ⁵ I ₈ → (⁵ F ₄, ⁵ S ₂), and their maximal absorption cross sections are σ_abs^max (λ = 450.3 nm) = 1.16 × 10⁻²⁰ cm² and σ_abs^max (λ = 535.1 nm) = 0.9 × 10⁻²⁰ cm². The intensity parameters Ω _t have been calculated by the Judd-Ofelt method taking into account 10, 12, and 20 transitions from the ⁵ I ₈ ground state to excited multiplets. We show that, with an increasing number of transitions taken into account in the calculation, the parameters Ω _t somewhat increase. For 20 transitions, we have obtained the following intensity parameters: Ω₂ = 0.97 × 10⁻²⁰, Ω₄ = 1.74 × 10⁻²⁰, and Ω₆ = 1.15 × 10⁻²⁰ cm². With these parameters, we have calculated the probabilities of radiative transitions, the radiative lifetimes, and the branching ratios. The rates of multiphoton nonradiative transitions have been estimated. The luminescence decay kinetics from excited holmium levels ⁵ F ₃ (⁵ F ₄, ⁵ S ₂) and ⁵ F ₅ have been studied upon selective excitation in the range of 490 nm, and the lifetimes of these levels have been experimentally determined. We find that the calculated and experimental rates of radiative and nonradiative relaxation from excited holmium levels agree well with each other. We show that, upon pumping in the range of 490 nm, the multiplet (⁵ F ₄, ⁵ S ₂) is populated as a result of the radiative and nonradiative excitation relaxation from the ⁵ F ₃ level, while the lower-lying ⁵ F ₅ level is populated due to direct radiative transitions ⁵ F _{3, 2} → ⁵ F ₅, obviating the cascade scheme ⁵ F ₃ → (⁵ F ₄, ⁵ S ₂) ↝ ⁵ F ₅. We conclude that NYF:Ho³⁺ crystals are processable; admit doping by holmium in high concentrations (up to 100%); and, with respect to all their radiative characteristics, can be considered as potential active media for solid-state continuously tunable lasers in the IR and visible ranges.     

Improvement of thermal and spectroscopic behavior of Er<Superscript>3+</Superscript>/Ce<Superscript>3+</Superscript> co-doped tellurite glass for lasing materials

Tellurite glasses (TeO₂–ZnO–Nb₂O₅) mono-doped Er³⁺ and co-doped Er³⁺/Ce³⁺ have been prepared using the melt-quenching technique. To evaluate the effect of Ce³⁺ on the structural, thermal stability of glass hosts and fluorescence properties of Er³⁺, X-ray diffraction patterns, Ftir spectra, differential scanning calorimeter curves, absorption spectra, fluorescence emission spectra, fluorescence lifetimes, up-conversion emission spectra of glass samples were measured and investigated. Using Judd–Ofelt theory, we calculated intensity parameters (Ω₂, Ω₄ and Ω₆), spontaneous emission probabilities, the radiative lifetime, luminescence branching factors and the quantum yield of luminescence for ⁴I_13/2 → ⁴I_15/2 transition. The co-doping with Ce³⁺ was effective on the suppression of up-conversion emission of Er³⁺ owing to the phonon-assisted energy transfer: Er³⁺:⁴I_11/2 + Ce³⁺:²F_5/2 → Er³⁺:⁴I_13/2 + Ce³⁺:²F_7/2 which contributed the effective enhancement of 1.53 µm fluorescence emission. The change in optical properties with the addition of Ce³⁺ ions have been discussed and compared with other glasses. Using the Mc Cumber method for the ⁴I_13/2 → ⁴I_15/2 transition, absorption cross-section, calculated emission cross-section, and gain cross-section values support that TZNEr1Ce1 glass is a potential material for developing broad-band and high-gain erbium-doped fiber amplifiers applied for 1.53 µm.     

Energy levels of rare-earth ions in Gd<Subscript>2</Subscript>O<Subscript>2</Subscript>S

The energies of the ground 4f ⁿ levels of tri- and divalent rare-earth ions with respect to the conduction and valence bands of Gd₂O₂S crystal has been determined. It is shown that the Pr³⁺, Tb³⁺, and Eu³⁺ ions can be luminescence centers in Gd₂O₂S. The levels of the Nd³⁺, Dy³⁺, Er³⁺, Tm³⁺, Sm³⁺, and Ho³⁺ ions lie in the valence band; therefore, these ions cannot play the role of activators. The ground 4f level of the Ce³⁺ ion is near the midgap, due to which Ce³⁺ effectively captures holes from the valence band and electrons from the conduction band and significantly decreases the afterglow level of the Gd₂O₂S:Pr and Gd₂O₂S:Tb phosphors.     

Quantum cutting in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript>: Eu<Superscript>3+</Superscript> by VUV excitation

The emission and excitation spectra of Gd₂SiO₅∶Eu³⁺ were investigated using the VUV beam line of the Beijing Synchrotron Radiation Facility (BSRF). The experimental results were discussed in the frame of visible quantum cutting process involved in Gd³⁺−Eu³⁺ system. Upon direct excitation into the⁶G _J states of Gd³⁺, two visible photon emissions from Eu³⁺ were observed. Cursory evaluation proved that Gd₂SiO₅∶Eu³⁺ is an efficient visible quantum cutter.     

Spectral-kinetic characteristics of crystals and nanoceramics based on BaF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript>: Ce

Optical characteristics of BaF₂ and BaF₂: Ce single crystals and nanoceramic materials prepared from these single crystals by uniaxial hot pressing have been studied. It has been shown that the introduction of Ce₃₊ ions into BaF₂ hardly affects the ultrafast (∼0.9 ns) luminescence component. The integrated luminescence intensity of the BaF₂: Ce nanoceramics is higher than that of the corresponding single crystal and considerably higher that the intensity of the undoped BaF₂ crystal. It has been demonstrated that the slow (several hundred nanoseconds) component of the luminescence decay of BaF₂: Ce is due to the energy transfer from excitons to Ce³⁺ ions.     

Electronic excitations and defects in nanostructural Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

A time-resolved cathodo-and photoluminescence study of nanostructural modifications of Al₂O₃ (powders and ceramics) excited by heavy-current electron beams, as well as by pulsed synchrotron radiation, is reported. It was found that Al₂O₃ nanopowders probed before and after Fe⁺ ion irradiation have the same phase composition (the γ-phase/δ-phase ratio is equal to 1), an average grain size equal to ～17 nm, and practically the same set of broad cathodoluminescence (CL) bands peaking at 2.4, 3.2, and 3.8 eV. It was established that Al₂O₃ nanopowders exhibit fast photoluminescence (PL) (a band at 3.2 eV), whose decay kinetics is described by two exponential stages (τ₁ = 0.5 ns, τ₂ = 5.5 ns). Three bands, at 5.24, 6.13, and 7.44 eV, were isolated in the excitation spectrum of the fast PL. Two alternate models of PL centers were considered, according to which the 3.2-eV luminescence either originates from radiative relaxation of the P^? centers (anion-cation vacancy pairs) or is due to the formation of surface analogs of the F⁺ center (F _S ⁺ -type centers). In addition to the fast luminescence, nano-Al₂O₃ was found to produce slow luminescence in the form of a broad band peaking at 3.5 eV. The excitation spectrum of the 3.5-eV luminescence obtained at T = 13 K exhibits two doublet bands with maxima at 7.8 and 8.3 eV. An analysis of the luminescent properties of nanostructural and single-crystal Al₂O₃ suggests that the slow luminescence of nanopowders at 3.5 eV is due to radiative annihilation of excitons localized near structural defects.     

Thermally stimulated recombination processes and luminescence in Li<Subscript>6</Subscript>(Y,Gd,Eu)(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> crystals

The thermally stimulated recombination processes and luminescence in crystals of the lithium borate family Li₆(Y,Gd,Eu)(BO₃)₃ have been investigated. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence spectra), the temperature dependences of the X-ray luminescence intensity, and the glow curves for the Li₆Gd(BO₃)₃, Li₆Eu(BO₃)₃, Li₆Y_0.5Gd_0.5(BO₃)₃: Eu, and Li₆Gd(BO₃)₃: Eu compounds have been measured in the temperature range 90–500 K. In the X-ray luminescence spectra, the band at 312 nm corresponding to the ⁶ P _J → ⁸ S _7/2 transitions in the Gd³⁺ ion and the group of lines at 580–700 nm due to the ⁵ D ₀ → ⁷ F _J transitions (J = 0–4) in the Eu³⁺ ion are dominant. For undoped crystals, the X-ray luminescence intensity of these bands increases by a factor of 15 with a change in the temperature from 100 to 400 K. The possible mechanisms providing the observed temperature dependence of the intensity and their relation to the specific features of energy transfer of electronic excitations in these crystals have been discussed. It has been revealed that the glow curves for all the crystals under investigation exhibit the main complex peak with the maximum at a temperature of 110–160 K and a number of weaker peaks with the composition and structure dependent on the crystal type. The nature of shallow trapping centers responsible for the thermally stimulated luminescence in the range below room temperature and their relation to defects in the lithium cation sublattice have been analyzed.