Effect of intrinsic degrees of freedom on the quantum tunneling of a collective variable

The effect of intrinsic degrees of freedom on tunneling through a potential barrier is discussed using a BKW-like approximation. In the present work intrinsic degrees of freedom are represented by a single harmonic oscillator. The theory leads to a formula for the effect of the coupling on the decay width Γ of a metastable state. When the frequency ω of the intrinsic degree of freedom is large, then Γ → Γ_ad where Γ_ad is the decay width calculated with the adiabatic barrier. An inequality Γ ≤ Γ_ad is proved for any form of the coupling hamitonian. Corrections are discussed and are shown to be of order $\text{1}\text{M}$ where M is the mass of the tunneling coordinate. An application to fission is considered. The generalization of our formula for Γ to the case of many intrinsic degrees of freedom is given explicitly.     

Persistent current with fractional period in a multichannel Wigner crystal ring

We calculate the persistent current in a multichannel semiconductor ring with strongly correlated electrons when they form a Wigner crystal (WC). Pinning this crystal with a smooth gate potential leads to the suppression of the amplitude of the Aharonov–Bohm oscillations and to the fractionalization of the period. A fractional period Φ₀/w (w = 2,3,…,6) appears because of the strong coupling between channels in the tunneling process of the WC through the pinning barrier.     

Differential Equation for the Transfer Matrix

An electron propagating through a crystal toward an interface can either reflect or transmit. The determination of its transmission and reflection probabilities represents an actual task in such fields as nanoelectronics, magnetoelectronics, or spin electronics. Within the framework of the effective mass approximation the problem can be reduced to the tunneling of the quantum particle through one-dimensional potential barrier. The tunneling process can be described by means of the transfer matrix, which contains all the information about the energetic dependence of the transmission and reflection coefficients. In the present work the differential equation for the transfer matrix of the arbitrary potential barrier is derived. The method proposed represents an alternative way of the calculation of the transfer matrix.     

Die Rotation des Elektronenspins beim ebenen Tunnelprozeß mit überlagertem homogenem Magnetfeld

Measurements of the spin polarization of field emitted electrons from various ferromagnetic (Gd, Ni, Fe) and nonferromagnetic metals (W) show a steady increase of the angle? _s between momentum and electron spin with increasing external magnetic field (spin rotation). This effect is refered to the coupling between the magnetic moment of the electron and the strong electric field in the potential barrier at the emitter surface during the tunneling process. A formal application of the equation of spin motion derived by Bargmann, Michel and Telegdi for an electron moving in homogeneous electromagnetic fields delivers a quantitative agreement with the experimental results.     

Strong coupling polaron theory and translational invariance

We develop a systematic, manifestly translation invariant, strong coupling theory for nonrelativistic Hamiltonians of the polaron type. As in earlier strong coupling theories, the position of the polarization well is a collective coordinate. The field is expanded in a set of basis functions centered about the well with three amplitudes deleted. A particle coordinate relative to the polarization center is introduced. The new coordinates are introduced using a point canonical transform leading to a Hermitian Hamiltonian, with properly normalized wavefunctions, and with a Jacobian that is evaluated in closed form. All subsequent approximations to the states are manifestly translation invariant. For the ground state the energy of the recoil terms to leading order depend on the coupling constant g as g^?4. The intrinsic part of the Hamiltonian determines the energy terms of order g⁴ and g⁰. An adiabatic canonical transformation is used to calculate all terms through order g^?4. The coefficients depend on the Green's function for the electron in a static potential well. We determine the first three terms in the inverse coupling constant expansion of the effective mass.     

Tunneling in 2-D quantum dots via quantum adiabatic switching route

We explore the phenomenon of tunneling in single carrier 2-D quantum dot by quantum adiabatic switching route. The confinement in the y-direction is kept harmonic which ensures that tunneling is allowed only along the x-direction. The harmonic confinement potential is kept fixed and a constant external magnetic field is applied along the z-direction. The growth of probability density in the classically forbidden zones and tunneling current are monitored critically which reveals how tunneling significantly depends on the barrier parameters. The efficacy of the switching function in enforcing adiabaticity of the evolution is demonstrated. The effective mass, barrier width, and height emerge as important control parameters.     

Effect of internal energy on the repulsive Coulomb barrier of polyanions

The nature of the repulsive Coulomb barrier in isolated molecular polyanions is studied by means of the photodetachment dynamics of the S(1) excited state of the fluorescein dianion which is bound solely by the repulsive Coulomb barrier. Photoelectron spectra reveal a feature at a constant electron kinetic energy, regardless of the excitation energy. This is explained by using an adiabatic tunneling picture for electron loss through successive repulsive Coulomb barriers correlating to vibrationally excited states. This physical picture is supported by time-resolved photoelectron spectra, showing that the tunneling lifetime is also invariant with excitation energy.     

Electron tunneling through thin barrier with smooth potential at GaAs/AlAs(001) heterointerfaces

The influence of actual microscopic potential on the characteristics of resonant electron tunneling from the Γ valley in GaAs through the AlAs barrier with thickness of one lattice constant has been investigated by the methods of pseudopotential and scattering matrix factorized by the irreducible representations of the symmetry group of the heterostructure. The transition regions between the potentials of components and the barrier region are treated as the components of the Ga₂Al₂As₄ superlattice spacing to provide the continuity of the crystal potential at the boundaries of the matching of wave functions. It is demonstrated that, compared to the results obtained in the abrupt-interface model, the inclusion of the actual potential in the calculation leads to changes in the number and location of the Fano resonances, an enhancement in the localization of electron density within the barrier, and a drastic increase in the tunneling time.     

InAs/InP柱型量子线中隧穿时间和逃逸问题的研究

在有效质量近似和绝热近似下,利用转移矩阵法研究了电子通过In As/In P/In As/In P/In As柱形量子线共振隧穿二极管的输运问题,分析和讨论了电子居留时间以及电子的逃逸过程.详细研究了外加电场、结构尺寸效应对居留时间和电子逃逸的影响.居留时间随电子纵向能量的演化呈现出共振现象;同时,结构的非对称性对电子居留时间有很大的影响,随着结构非对称性的增加,居留时间表现出不同的变化.利用有限差分方法研究了非对称耦合量子盘中电子的相干隧穿逃逸过程.     

Second-order corrections to correlations in muon capture

Muon capture by a nucleus with an arbitrary spin is considered. Second-order terms in 1/M in the effective weak-interaction Hamiltonian are taken into account. New terms in the Hamiltonian associated with the nucleon-nucleus potential are found. A general expression for the angular distribution of neutrinos (recoil nuclei) is derived for polarized muons and oriented target nuclei. Second-order contributions to the amplitudes M _u (k) are obtained. This allows one to calculate second-order corrections to any integral and correlation characteristics in muon capture that are expressed in terms of M _u (k).     

Control of conductance in a quasi-1D channel in the presence of spin-orbit coupling

The electron energy spectrum and conductance in a quasi-1D channel with spin-orbit coupling is calculated. The channel is divided into two parts by a potential barrier. It is shown that a change in the barrier electric potential yields additional extema of the function ?(k). This results in modification of the conductance quantization law. The quantum states and conductance are calculated for the parameters of real structures with weak both and relatively strong spin-orbit coupling.     

Elastic and inelastic tunneling of photoelectrons from the dimensional quantization band at a p +-GaAs-(Cs,O) interface into vacuum

The photoemission of electrons from a p ⁺-GaAs surface with negative electron affinity was studied experimentally at 4.2 K. A narrow peak and its phonon replicas were observed in the distribution of emitted electrons over the energies of longitudinal motion. These replicas are caused by elastic and inelastic electron tunneling from the bottom of the dimensional quantization band in the near-surface spatial-charge region through the potential barrier of the (Cs,O) activating coverage with emission of LO phonons. The measured position of the peak corresponding to elastically tunneling electrons is close to the calculated one.     

Relaxation and resonance ultrasound attenuation by Jahn-Teller centers in a GaAs:Cu crystal

The interaction of ultrasound with Cu_Ga4As in a GaAs:Cu crystal has been experimentally studied. The temperature dependences of the attenuation of all normal ultrasonic modes propagating in the ??110?? direction both in doped copper and in nominally pure gallium arsenide crystals have been measured. In the GaAs:Cu crystal, the attenuation peak has been revealed for a transverse wave polarized along the ??110?? axis whose elastic shifts correspond to the symmetry of the tetragonal mode of the Jahn-Teller effect. The temperature dependence of the attenuation of this wave indicates that two types of attenuation??relaxation and resonance??occur. The constructed temperature dependence of the relaxation time indicates that tunneling through the potential barrier between the minima of the adiabatic potential energy is the main relaxation mechanism at temperatures below 10 K. Tunneling splitting estimated from experimental data is in good agreement with the theoretical estimate.     

栅极电势对强光场下石墨烯场效应管中电子隧穿的影响

利用时域有限差分方法研究了强光场下石墨烯场效应管中栅极电势对电子隧穿的影响. 在强光场下由于光学stark效应,石墨烯场效应管的完美手征透射被抑制.这种抑制除了 可以利用光场来调控外,也可以通过改变栅极电势的宽度、势垒高度等来调控. 研究了非方势垒中电子的隧穿. 研究发现,当电势的倾斜较小时,电子隧穿概率变化不大.而当电势倾斜很大时,电子隧穿概率急剧改变.     

Transport properties through double-magnetic-barrier structures in graphene

We study electrons tunneling through a double-magnetic-barrier structure on the surface of monolayer graphene.The transmission probability and the conductance are calculated by using the transfer matrix method.The results show that the normal incident transmission probability is blocked by the magnetic vector potential and the Klein tunneling region depends strongly on the direction of the incidence electron.The transmission probability and the conductance can be modulated by changing structural parameters of the barrier,such as width and height,offering a possibility to control electron beams on graphene.     

Double tunneling: An overlooked quantum effect in anionic molecular clusters

Simultaneous tunneling of an electron and nuclei in hydrogen-bonded molecular clusters which support a dipole bound electron is reported. A whole class of systems including hydrogen halide and water dimer anions is predicted to exhibit this effect. A measurable signature of double tunneling is a strong reduction of the tunneling splitting compared to the neutral cluster. Quantum mechanical calculations give for the hydrogen fluoride dimer anion a ground-state tunneling splitting of 114 MHz, while for the first excited vibrational state the tunneling splitting reaches 4.20 GHz.     

Quantum dynamics of superconducting point contacts: chiral anomaly,Landau–Zener transitions,and all that

Quantum effects in the dynamics of the Josephson phase difference in Josephson junctions with large electron transparency D are studied in the adiabatic regime, when the characteristic charging energyE_C of the junction is much smaller than the superconducting energy gap Δ. In isolated junctions, quantum phase fluctuations are large and manifest themselves as Coulomb blockade of Cooper pair tunneling. The amplitude of the Coulomb blockade oscillations is calculated for single-mode junctions with arbitrary D. In particular, it is shown that the chiral anomaly completely suppresses Coulomb blockade in ballistic junctions with D =  1, and the suppression process at D →  1 can be described as the Landau–Zener transition in imaginary time. In the regime when quantum phase fluctuations are small, they lead to quantum decay of supercurrent states due to macroscopic quantum tunneling of phase through the Josephson potential barrier. The decay rate is found in the nearly-ballistic junctions.     

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In_xGa_(1−x)As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended.     

k//=0 filtering effects in ballistic electron transport through sub-surface GaAs–AlGaAs double barrier resonant tunneling structures

In ballistic electron emission microscopy on Au–GaAs double barrier resonant tunneling diodes, electrons are transferred across an interface between an area of high and low effective mass and subsequently through a low-dimensional state. Experimentally, the resonant level in the double barrier structure becomes evident as clear step in the ballistic current measured as a function of sample bias. To analyze the spectrum, an extended transfer matrix method, together with the commonly accepted Bell Kaiser model is used. In terms of this model we show that only electrons with zero wave vector parallel to the barriers can be transmitted resonantly.     

Resonant charge exchange in slow collisions involving halogens and oxygen

The coupling of electron momenta is considered for the resonant charge exchange process in slow collisions. Because the electron transfer in this process occurs at large distances between the colliding atomic particles, where ion-atom interactions are relatively weak, we can separate different types of interaction and find the character of coupling of the electron momenta in the quasi-molecule, consisting of the colliding ion and its atom, for real collision pairs. Since the real number of interaction types for colliding particles exceeds that used in the classical Hund coupling scheme, there are intermediate cases of momentum coupling outside the standard Hund scheme. This occurs for the resonant charge exchange involving halogens and oxygen where the quantum numbers of the quasi-molecule in the course of the electron transfer are the total momenta J and j of the colliding ion and atom and the projection M or M_J of the atom orbital or total momentum on the quasi-molecule axis. The ion-atom exchange interaction potential is independent of the ion fine state, and under these conditions, the resonant charge exchange process is not entangled with the rotation of electron momenta, as in case “a” of the Hund coupling. The partial cross section of the resonant charge exchange process depends on quantum numbers of the colliding particles. The average cross sections depend weakly on the coupling scheme.