Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold

Four kinds of Y₂O₃ stabilized ZrO₂ (YSZ) thin films with different Y₂O₃ content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y₂O₃ molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y₂O₃ content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO₂ material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points.     

Influence of Ytterbia Content on Residual Stress and Microstructure of Y2O3--ZrO2 Thin Films Prepared by EB-PVD

Y2O3 stabilized ZrO2 （YSZ） thin films with different Y2O3 molar contents （0, 3, 7, and 12 mol%） are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques： the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress increases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.     

Structure and surface characterization of ZrO2-Y2O3-Cr2O3 system

3-mol% Y₂O₃ and 0.3 to 3-mol % Cr₂O₃ co-doped ZrO₂ nanopowders were synthesized using co-precipitation technique and investigated by terms of X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Structural analysis shows no significant impact of chromium on powders structure except of presence of small amount of m-phase. Surface analysis reveals segregation of yttrium and chromium atoms to the surface along with surface enrichment by oxygen that can be attributed to residual water. Chromium surface atoms present in three oxidation states with catalytically active Cr²⁺ sites possibly controlling m-phase appearance through lattice distortion.     

Growth and characterization of Y2O3 thin films

Y₂O₃ thin films were grown on silicon (1 0 0) substrates by pulsed-laser deposition at different substrate temperatures and O₂ pressures. The structure and composition of films are studied by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Y₂O₃ thin films deposited in vacuum strongly oriented their [1 1 1] axis of the cubic structure and the film quality depended on the substrate temperature. The magnitude of O₂ pressure obviously influences the film structure and quality. Due to the silicon diffusion and interface reaction during the deposition, yttrium silicate and SiO₂ were formed. The strong relationship between composition and growth condition was discussed.     

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

The characteristics of Si-doped Sb₂Te₃ thin films were investigated using differential scanning calorimetry (DSC), four-point probe technique, X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HRTEM). It is found that the as-deposited Sb₂Te₃ film in our study is partly crystallized. Silicon doping increases the crystallization temperature and resistivity of Sb₂Te₃ film significantly. XRD and HRTEM analyses indicated that some of the doped Si atoms substitute for Sb or Te in the lattice, while others exists at the grain boundaries in the form of amorphous phase, which may be responsible for grain size reduction and high crystalline resistivity of Si-doped specimens. Compared with the conventional Ge₂Sb₂Te₅ film, Si-doped Sb₂Te₃ films exhibit lower melting temperature and higher crystalline resistivity, which is beneficial to RESET current reduction of phase-change random access memory (PRAM). These results show the feasibility of Si-doped Sb₂Te₃ films in PRAM application.     

Meter-long CeO2/YSZ/Y2O3 buffer layers for YBCO coated conductors using DC reactive sputtering

This paper reports CeO₂/YSZ/Y₂O₃ buffer layers deposited on biaxially textured NiW substrates by DC reactive sputtering in a reel-to-reel system. The effect of partial pressure of water vapor (P_H2O) on surface morphology and orientation of the Y₂O₃ films was examined. The obtained CeO₂/YSZ/Y₂O₃ buffer layers exhibit a highly biaxial texture, with in- and out-of-plane FWHM values respectively in the range of 6.0–7.0° and 4.5–5.5°. Crystallographic consistency of CeO₂/YSZ/Y₂O₃ along meter length is excellent. Atomic force microscope observation (AFM) reveals a smooth, continuous and crack-free surface with a Root-mean-square roughness (RMS) lower than 10 nm.     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

Comparative analysis of crystal field effects and energy level scheme of six-fold coordinated Cr ion in the pyrochlores, Y2B2O7 (B=Ti, Sn)

The electronic energy levels of the six-fold coordinated Cr⁴⁺ ion in the pyrochlores Y₂B₂O₇ (B=Sn⁴⁺, Ti⁴⁺), have been computed using the exchange charge model of crystal field theory. The calculated Cr⁴⁺ energy levels and their trigonal splitting are in good agreement with experimental spectra. Calculations of the crystal field parameters show that the higher crystal field strength in Y₂Sn₂O₇ (in comparison with Y₂Ti₂O₇) arises from increased orbital overlap effects between the Cr⁴⁺ ion and the nearest oxygen ions, which are located at the 48f crystallographic position of the pyrochlore lattice. The increased overlap in Y₂Sn₂O₇ occurs despite the fact that the Cr⁴⁺-O^2- bond distance in Y₂Sn₂O₇ is longer than in Y₂Ti₂O₇. This is attributed to a lack of hybridization (covalent bonding) between the filled 2p orbital of oxygen ion occupying the 48f site of the pyrochlore lattice and the filled Sn⁴⁺ 4d¹⁰ orbital. As a result, a stronger crystal field is experienced by Cr⁴⁺ ions in Y₂Sn₂O₇, even if the Cr⁴⁺-O²⁻ distances are greater in this case, when compared to those in Y₂Ti₂O₇.     

Yb:Y2O3透明陶瓷的光学性能研究

介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb：Y₂O₃多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性，并与Yb：YAG单晶进行了对比.采用紧凑型有源镜激光器(CAMIL)的抽运方式，验证了Yb：Y₂O₃透明陶瓷的激光输出性能.在35W的最大抽运功率下，得到波长1078 nm，功率10.5 W 的连续激光输出，斜率效率达到37.5%.实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象.Yb：Y₂O₃多晶陶瓷是一种理想的激光材料，不仅具有与Yb：YAG单晶同样优秀的物理化学性能和光谱特性，而且其热导率和发射带宽约为Yb：YAG单晶的两倍，非常适合于高亮度激光器和超短脉冲激光器领域的发展应用. 关键词： 2O₃陶瓷')" href="#">Yb:Y₂O₃陶瓷 陶瓷激光器 透明陶瓷     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

STUDY OF DOPING EFFECT ON THE Bi2Sr2Ca2Cu3Oy SUPERCONDUCTOR

We have systematically investigated the doping effect on the Bi₂Sr₂Ca₂Cu₃O_y superconductive material. After entering into the crystal lattice, Pb and/or Sb atoms cause not only variations of the temperature condition during the sample preparation process, but also variations of structures and superconductivity. By analyzing the experimental results, we have come to the conclusion that the Pb and/or Sb atoms enter into the Bi-O planes, preferably occupy the sites of Bi ions, regulate the crystal structures and the distribution of oxygen ions in Bi-O planes and nearby lattice sites, thus benefiting the formation of the high-T_c phase and improving the superconductivity.     

Conductivity of Fe2O3-doped YSZ

Effect of 2 mol.% Fe₂O₃ addition on conductivity of yttria stabilized zirconia ceramics (YSZ, 6–12 mol.% Y₂O₃) was established. For Fe doped material, it was shown that conductivity demonstrates maximum at 10 mol.% Y₂O₃, and its value increases by 1.4 times. Conductivity maximum corresponds with the minimal volume of crystal lattice. Discussion of results was performed in terms of the model that assumes the control effect of hydrostatic pressure on oxygen ions diffusion.     

Pressure dependence of dielectric constant,elastic constants,and lattice parameters of the Y3(Ga,Al)5O12 host

Atomistic simulations were performed to investigate the lattice parameters, dielectric constant, and elastic constants of Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures. The calculated lattice parameters and elastic constants are in good agreement with those in available experimental results. The pressure dependence of all studied quantities was investigated. In general, a change in the behavior of all studied quantities is found when the Ga concentration becomes more than that of the aluminum (Al) in Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures.     

Theoretical studies of the optical and EPR spectra for V in Y2O3 crystal

In this paper, we give an alternative suggestion that both the observed optical and electron paramagnetic resonance (EPR) spectra of Yttrium oxide (Y₂O₃):V³⁺ are attributed to V³⁺ ions at the S₆ site of Y₂O₃. This suggestion is different from the opinion in the previous paper that the optical and EPR spectra are attributed to V³⁺ ions at the C₂ and S₆ sites, respectively. From the suggestion, the optical band positions and spin-Hamiltonian parameters are calculated by diagonalizing the complete energy matrix for 3d² ions in trigonal symmetry. The results are in good agreement with the experimental values, suggesting that both the observed optical and EPR spectra in Y₂O₃:V³⁺ may be due to V³⁺ at S₆ site of Y₂O₃ crystal.     

Defect formation and water incorporation in Y2O3

The molecular statics method is used to study the formation of defects and water incorporation in Y₂O₃. The crystal structure, the isothermal compressibility, and the formation enthalpy of Y₂O₃ calculated with the chosen interaction potentials are in good agreement with the experimental data. The formation energies of intrinsic and impurity defects are evaluated. The binding energy of protons and oxygen vacancies with an acceptor impurity at different distances is calculated. Various water incorporation reactions in the oxide are examined, including the mechanisms involving oxygen interstitial sites and oxygen vacancies produced by the acceptor doping. It is shown that the water incorporation in pure Y₂O₃ is energetically less favorable than in the acceptor doped oxide.     

Static and dynamic disordered states in VO2+-doped BaCl2·2H2O crystals

From the EPR investigation, two different crystalline states were found in the VO²⁺ ion-doped BaCl₂·H₂O crystal. One is a dynamic disordered state, where the trapped VO⁺² ion exhibits hindered rotational motion in a wide temperature region. This state is transformed to a static disordered state even at ambient temperature. The orientation of the doped ion reveals random distribution in the lattice sites. Such polymorphism does not come from phase transition of the host crystal, but from the existence of the metastable state of the VO²⁺ ion trapped in the lattice. The absence of the phase transition of pure BaCl₂·2H₂O was confirmed by the measurement of ¹³⁷Ba NQR and by differential thermal analysis.     

Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Ge-doped Sb₂Te₃ films were prepared by magnetron sputtering of Ge and Sb₂Te₃ targets on SiO₂/Si (1 0 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb₂Te₃ increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.     

石墨/Li（Ni1/3Co1/3Mn1/3）O2电池充放电过程中电极材料的XRD研究

利用XRD系统地研究了石墨/Li（Ni_1/3Co_1/3Mn_1/3）O₂ 18650型锂离子电池充放电过程中正负极活性材料的晶体结构和微结构的变化.已观测到,由于Li原子的脱嵌,使得LiMO₂点阵参数a缩小,c增大,微应变增大,衍射强度比I₁₀₄/I₁₀₁和I₀₁₂/I₁₀₁降低;此外,由于Li原子的嵌入,2H-石墨的点阵参数a和c,以及微应变ε和堆垛无序度P都增加.同时,讨论了活性材料Li（Ni_1/3Co_1/3Mn_1/3）O₂和石墨在电池充放电过程中的嵌脱锂的物理机理.在充电时,正极Li（Ni_1/3Co_1/3Mn_1/3）O₂中处于（000）位的Li原子优先脱离晶体点阵,继后才是位于（2/3 1/3 1/3）和（1/3 2/3 2/3）位的Li原子离开点阵.锂嵌入石墨,优先进入碳原子六方网格面间的间隙位置,当负极的堆垛无序度达到一定值后,3R相逐渐析出.当电池满充或过充时,在六方石墨中形成LiC₁₂和LiC₆相.放电时,与上述过程相反,但并非是完全可逆的. 关键词： 锂离子电池 微结构 X射线衍射 嵌脱锂物理机理     

A Ni/YSZ composite containing Ce0.9Ca0.1O2−δ particles as an anode for SOFCs

A composite material (hereafter referred to as NYC) containing Ni, Y₂O₃-stabilized ZrO₂ (YSZ) and Ce_0.9Ca_0.1O_2−δ (CC10) particles was prepared and used as the anode of solid oxide fuel cells (SOFCs). The performance of NYC was better than that of conventional Ni/YSZ anodes in terms of anodic overpotential and interface impedance. The additional CC10 particles improved the anode properties. XRD results suggest that a solid solution of YSZ and CC10 was produced. From impedance measurements, it is concluded that the solid solution exhibits substantial electronic conduction. Ni/YSZ/15 wt% Ce_0.9Ca_0.1O_2−δ anodes exhibited the best properties over the experimental temperature range. A SOFC with an anode of Ni/YSZ/15 wt% Ce_0.9Ca_0.1O_2−δ provided the maximum power density and current density. Addition of CC10 with an average particle size of 0.3 μm was more advantageous than that with an average size of 3 μm.     

An interpretation of the optical properties of Cr-activated pyrochlores, Y2Ti2O7 and Y2Sn2O7

A qualitative model is proposed to explain the differences between the optical properties of the six-coordinated Cr⁴⁺ ion in the pyrochlores, Y₂Sn₂O₇ and Y₂Ti₂O₇. It is shown that polarization of the electron density of the oxygen ions occupying the 48f sites of the pyrochlore lattice is responsible for the observed differences in the optical properties.