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1.
We demonstrate a LD end-pumped passively mode-locked Nd:YVO 4 laser using a single-walled carbon nanotubes saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric arc
discharge method on quartz substrate with absorption wavelength of 1064 nm. At the absorbed pump of 15.8 W, an output power
of 750 mW CW (continuous wave) mode-locked laser pulse was achieved with the repetition of 79.7 MHz, corresponding to optical-optical
efficiency of 4.75%. 相似文献
2.
We report on a diode end-pumped passively mode-locked Nd:GdVO 4 laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO 4 laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi. 相似文献
3.
We report on a passively mode-locked Nd:YVO 4 laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source
was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous
wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the
highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate
of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ. 相似文献
4.
Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon
nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and
790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO 4 laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps
and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump
power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking. 相似文献
5.
Using the vertical evaporation technique we fabricated saturable absorbers by transferring the double-wall carbon nanotubes
(DWCNT) onto a hydrophilic quartz substrate. The fast recovery time and the saturation intensity of the absorber were measured
to be 228 fs and 130 μJ/cm 2, respectively, at 1060 nm. The modulation depth of the absorber was about 3.7%. Passive mode-locked Nd:GdVO 4 laser was demonstrated. The continuous wave mode-locked pulses pulse duration is 5.6 ps and the largest average output power
is 1.2 W at the pump power of 9.5 W. To the best of our knowledge, this is the first demonstration of high power continuous
wave mode locking laser with DWCNT absorber. 相似文献
6.
A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO 4/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz. 相似文献
7.
By using a-cut Nd:Lu 0.15Y 0.85VO 4 mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable
absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation
depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched
pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of
6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest
pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about
275 ps. The experimental results show that Nd:Lu 0.15Y 0.85VO 4 is a promising mixed crystal for QML laser. 相似文献
8.
In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO 4 laser. The pumping sources of Ho,Tm:GdVO 4 laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating
near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion
efficiency of 35.1% at 2.05 μm has been attained. The M
2 factor was found to be 2.0 under an output power of 16.5 W. 相似文献
9.
In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO 4 laser. The pumping source of Tm, Ho:GdVO 4 laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump
power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at
2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at
2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO 4 laser were firstly compared when it worked in CW mode and Q-switched mode. 相似文献
10.
We report a red laser at 670.5 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of
a 1341 nm Nd:GdVO 4 laser under in-band diode pumping at 912 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic
generation of the laser. At an incident pump power of 8.9 W, as high as 347 mW of CW output power at 670.5 nm is achieved.
The fluctuation of the red output power was better than 3.7% in the given 30 min, and the beam quality factor M
2 is 1.65. 相似文献
11.
We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM 00 Nd:GdVO 4 laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power
of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3
ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality
factor was measured to be M
2 = 1.18, indicating a TEM 00 mode. 相似文献
12.
We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser
operation of a diode pumped Nd:GdVO 4 laser on the 4
F
3/2 → 4
I
13/2 transition at 1340 nm. An GdCa 4O(BO 3) 3 (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the
laser. At an incident pump power of 18.2 W, as high as 1.32 W of continuous wave (CW) output power at 670 nm is achieved with
15-mm-long GdCOB. The optical-to-optical conversion efficiency is up to 7.3%, and the fluctuation of the red output power
was better than 3.5% in the given 30 min. 相似文献
13.
A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO 4/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the
incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about
80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition
rate of 115 MHz, its average pulse width was estimated to be about 350 ps. 相似文献
14.
A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO 4 solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz. 相似文献
15.
We report a passive mode-locked Nd:YVO 4 laser pumped by 880 nm LD using a transmission-type multi-walled carbon nanotube saturable absorber. At the pump power of
6.1 W, the average output power of 0.8 W of continuous wave mode-locked laser with optical conversion efficiency of 13.1%
was generated. The repetition rate and pulse energy of the mode-locked pulse were 88 MHz and 9.1 nJ, respectively. 相似文献
16.
We report a diode-pumped Nd:Gd 0.64Y 0.36VO 4 laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%. 相似文献
17.
We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb 2O 6 laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode
locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With
a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency
of 23%. The experimental results show the Nd:CaNb 2O 6 crystal is a promising laser gain medium for picosecond pulse generation. 相似文献
18.
A compact high power diode-side-pumped Nd:GdVO 4 laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO 4 in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO 4 laser head. The laser characteristics of both CW and Q-switched Nd:GdVO 4 and Nd:YAG in are compared and it was found that Nd:GdVO 4 may surpass Nd:YAG for high power laser application. 相似文献
19.
We report continuous-wave (CW) and passively Q-switched Nd :GdVO4 lasers on 4F3/2 → 4I13/2 transition directly pumped by an 880 nm diode laser. A widely investigated Nd :GdVO4 laser at about 1341 nm is operated with a maximum output power of 5.23 W and a slope efficiency of about 30.6%. Using an etalon for wavelength selection, we realize laser emission at about 1344 nm, for the first time to our knowledge, in a Nd :GdVO4 laser, with a maximum output power of 4.19 W and a slope efficiency of 20.1%. Moreover, we achieve simultaneous dual-wavelength lasing at 1341 and 1344 nm with a maximum output power of 2.27 W and a slope efficiency of 13.5%, respectively. Using V3+ :YAG as a saturable absorber, stable Q switching is obtained at about 1341 nm with a maximum average output power of 1.15 W. The pulse width is 52.8 ns at a repetition rate of 279.8 kHz. 相似文献
20.
We report a red laser at 672 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of
a 1343 nm Nd:LuVO 4 laser under in-band diode pumping at 888 nm. An GdCa 4O(BO 3) 3 (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the
laser. At an incident pump power of 17.8 W, as high as 1.73 W of CW output power at 672 nm is achieved. The optical-to-optical
conversion efficiency is up to 9.7%, and the fluctuation of the red output power was better than 3.3% in the given 30 min. 相似文献
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