Wavelength Tuning Characteristics of a Vertival Cavity Surface Emitting Laser Diode with an External Short Cavity

The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r₂ of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r₂ due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.     

Wavelength tuning characteristics of a fabry-perot semiconductor laser with an external short cavity

Wavelength tuning characteristics of a Fabry-Perot semiconductor laser with an external short cavity are analyzed, in which the oscillation wavelength can be changed by slightly altering the external cavity length. Analysis is based on rate equations for an optical power and carrier density. It is shown that the wavelength tuning range is dominated by a change of carrier density through the effect of carrier-induced refractive index change in the active layer of a laser diode. This depends on effective coupling coefficients of the optical field iteratively reflected back to the laser diode by the external mirror, and on reflection coefficients of an anti-reflection coated laser facet and the external mirror which compose the external cavity. The effective coupling coefficient is also derived using the waveguide theory and Kirchhoff ’s theory. Finally, an unstable condition which may limit a stable wavelength tuning range is shown by results of a linear stability analysis of rate equations.     

Extension of the mode-hop-free tuning range of an external cavity diode laser based on a model of the mode-hop dynamics

We report on a universal method to achieve and sustain a large mode-hop-free tuning range of an external cavity diode laser based on a model of its mode-structure dynamics. Using this method, we were able to scan 73 GHz mode-hop free by using an uncoated off-the-shelf laser diode with a central wavelength of 785 nm. Our model applies to any laser system requiring synchronization of more than one optical element.     

Grating-Stabilized External Cavity Diode Lasers for Raman Spectroscopy—A Review

Abstract: Conventional Raman techniques require a continuous-wave laser with stabilized wavelength, narrow line width, and sufficient output power. Due to their miniature size and low cost, diode lasers are good choice as light sources for Raman spectroscopy, especially when compact and portable instruments are needed. However, a solitary multimode diode laser has certain drawbacks that limit its use for Raman application. To circumvent these drawbacks, an external cavity can be coupled to the active gain medium of the diode to enhance the laser performance. A grating-based external cavity allows the laser to operate in a single longitudinal mode with greatly reduced line width and stabilized wavelength. This article examines the fundamentals of semiconductor lasers to show the necessity of operating diode lasers in an external cavity for Raman applications. Two feedback grating-based external cavity diode laser (ECDL) designs, viz. Littrow and Littman-Metcalf configurations, are explained. Historic and recent progress in the development of ECDL devices is reported. An updated summary of ECDL-equipped Raman systems applied to fields such as in vivo biomedical studies and in situ process/quality control is provided. Topics on mode-hop-free continuous scanning, wavelength stabilization, and dealing with ambient conditions are discussed.     

分布反馈激光器中剩余法布里-珀罗腔模对非简并四波混频特性的影响

基于四波混频(FWM)的全光波长转换技术是未来多波长通信系统的核心技术之一。除半导体光放大器(SOA)外,半导体激光器也是进行波长变换的器件。实验研究了小频率失谐到大频率失谐下分布反馈(DFB)激光器中剩余法布里珀罗腔模对非简并四波混频(NDFWM)的影响,并对其四波混频转换效率进行了分析。结果表明:当探测光波长与法布里珀罗腔的某一谐振波长一致时,分布反馈激光器中的四波混频转换效率将得到显著的增强;当频率失谐为太赫兹时,仍可得到较高的四波混频转换效率。     

二极管泵浦无机液体激光器出光实验研究

 为探索新的高能激光体系，搭建了二极管泵浦的液体激光器。采用激光二极管作为泵浦光源，单侧泵浦掺钕离子的无机激光液体，进行了出光实验。通过测量输出光束的近场分布、脉冲波形和光谱，证实实现了激光输出，输出激光的波长为1 053 nm。输出的单脉冲激光能量达到47 mJ，光-光转换效率达到14%。其光-光转换效率高出闪光灯泵浦液体条件下2个数量级，说明该激光体系具有向高能激光体系发展的前景。     

CO2的腔增强吸收与高灵敏吸收光谱研究

腔增强吸收光谱(CEAS)是在衰荡吸收光谱的基础上发展起来的一种新型的直接吸收光谱技术.文章报道了用中心输出波长为1.573μm的窄线宽连续可调谐半导体激光器(DFB封装)作光源,用两块高反射率平凹透镜(在1.573μm附近,凹面反射率R～99.4%,曲率半径r～1 m)组成对称共焦腔作吸收池的腔增强吸收光谱系统.采用扫描腔长的方法改变谐振腔的模式,当激光器的输出频率与谐振腔的某一腔模之间满足共振匹配关系时,激光被耦合到谐振腔内,用探测器接收透过谐振腔的光信号,同时用波长计精确测量激光器的输出波长.在33.5 cm长的吸收池内测量了吸收强度为1.816×10-23cm-1·(molecule·cm-2)-1的二氧化碳分子的弱吸收谱线,探测灵敏度达到了6.78×10-7 cm-1.实验结果表明,腔增强吸收光谱具有灵敏度高,装置简单,易于操作等优点.     

Diode laser based light sources for biomedical applications

Diode lasers are by far the most efficient lasers currently available. With the ever‐continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode lasers simultaneously offer tunability, high‐power emission and compact size at fairly low cost. Therefore, diode lasers are increasingly preferred in important applications, such as photocoagulation, optical coherence tomography, diffuse optical imaging, fluorescence lifetime imaging, and terahertz imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications. 670 nm external cavity diode laser for Raman spectroscopy built on a 13 × 4 mm² microbench (Copyright FBH/Schurian.com ).     

Performance Characteristics of Power Build-Up Cavity for Raman Spectroscopic Measurement

Performance characteristics of power build-up cavity (PBC) as the light source of a Raman spectroscopy based gas sensor were studied. The key parameter to optimize stable and high intra-cavity power operation was beam diameter of the back reflected beam from external cavity to diode laser. The optimum diameter determined by an appropriate distance between the cavity and diode laser was found to be comparable with the waveguide cross section of diode laser for the effective spatial filtering, where inevitable cavity coupling loss caused by slight spatial mode mismatching existed. A PBC with a finesse of ∼10300 achieved a stable TEM₀₀ mode in excess of intra-cavity power of 80 watts pumped by a 10 milliwatts diode laser. Simultaneously, the PBC wavelength is found to be passively locked effectively at 670 +/− 0.15 nm where the center of the gain region exists. A Raman spectrum of nitrogen measurement was demonstrated.     

Stabilized diode laser pumped, idler-resonant cw optical parametric oscillator

We present a diode laser pumped continuous wave, pump-enhanced singly-resonant optical parametric oscillator (OPO). The cavity is stabilized by a Pound?CDrever?CHall scheme using direct modulation of the diode laser. The system provides stable signal powers of up to 220?mW. The wavelength can be tuned between 1.40?C1.60???m for a ring or a linear cavity design by changing the crystal temperature. The relative fluctuations of the stabilized OPO??s wavelength are less than 10^?7 for more than one hour. Using a self-heterodyne technique, we measure a linewidth of the signal wave of 3.5?MHz.     

Quasi-monolithic ring resonator for efficient frequency doubling of an external cavity diode laser

A quasi-monolithic second-harmonic-generation ring resonator assembled with miniaturized components is presented. The ring contains a 10-mm-long bulk periodically poled lithium niobate crystal for second-harmonic generation, four plane mirrors and two gradient-index lenses. All parts are mounted on a glass substrate with an overall size of 19.5 mm×8.5 mm×4 mm. As pump source a broad-area laser diode operated in an external resonator with Littrow arrangement is utilized. This external cavity diode laser provides near diffraction limited, narrow-bandwidth emission with an optical output power of 450 mW at a wavelength of 976 nm. Locking of the diode laser emission to the resonance frequency of the ring cavity was achieved by an optical self-injection locking technique. With this setup more than 126 mW of diffraction-limited blue light at 488 nm could be generated. The opto–optical conversion efficiency was 28% and a wall plug efficiency better than 5.5% could be achieved.     

Second harmonic 423-nm laser generated by BIBO crystal for calcium optical frequency standard

Calcium is one prospective element for the modern optical frequency standard.The 423-nm transition line of calcium atoms has been widely used in laser slowing and laser cooling, the precise spectrum measurement, and the magnetic optical trapping (MOT).However, there is no any available commercial diode laser working at this wavelength.We built a 423-nm laser based on extra bow-tie cavity and by using a Brewster cut uncoated BIBO (BiB3O6) crystal, which worked at room temperature, with conversion efficiency of 3.75%, and a potential up to 20%.     

Widely tunable diffraction limited 1000 mW external cavity diode laser in Littman/Metcalf configuration for cavity ring-down spectroscopy

We report on recent progress on external cavity diode lasers (ECDL) using a new concept of a Littman/Metcalf configuration. Within this concept one facet of the diode laser chip is used for coupling to a high quality Littman/Metcalf resonator whereas the other side of the diode laser chip emits the output beam. The alignment of the external resonator is independent from the alignment of the output beam and there is no need for any compromise in the alignment. This results in an improved behavior of the external resonator with the benefit of a drastic increase in power and single mode tuning.We investigated this light source for high resolution spectroscopy in the field of cw-cavity ring-down spectroscopy (CRDS). The monitoring of environmental and medical gases from vehicles or human breath requires a suitable radiation source in the mid-infrared (MIR) between 3 and 5 μm that is frequency stable and can be widely tuned. Since this wavelength cannot be reached via direct emitting room temperature semiconductor lasers, additional techniques like difference frequency generation (DFG) are essential. Tunable difference frequency generation relies on high power, small linewidth, fast tunable, robust laser diode sources with excellent beam quality.With our new compact, alignment-insensitive and robust ECDL concept, we achieved an output power of 1000 mW and an almost Gaussian shaped beam quality (M²<1.2). The coupling efficiency for optical waveguides as well as single mode fibers exceeds 70%. The wavelength is widely tunable within the tuning range of 20 nm via remote control. This laser system operates longitudinally in single mode with a mode-hop free tuning range of more than 150 GHz without current compensation and a side-mode-suppression better than 50 dB. This concept is currently realized within the wavelength regime between 750 and 1080 nm.Our high powered Littman/Metcalf laser system was part of a MIR-light source which utilizes DFG in periodically poled lithium niobate (PPLN) crystals. At the wavelength of 3.3 μm we were able to achieve a high-resolution absorption spectrum of water with four different isotoplogues of H₂O components. This application clearly demonstrates the suitability of this laser for high-precision measurements. PACS 07.57.Ty; 42.55.Px; 42.62.Fi     

波长可调谐超短光脉冲的简便高质的生成技术

提出了一种以处于增益开关调制状态下的法布里珀罗(Fabry-Pérot)半导体激光器作为光源,采用简单的自激注入锁定方式,以生成波长可调谐的超短光脉冲的实验系统。该实验装置中,激光器的外腔包括两个串联在一起的布拉格光纤光栅,一个掺铒光纤放大器(EDFA),一个光耦合器和两个环行器,其作用是选模,以及增强并控制反馈回激光器内腔的光强。该实验系统简单而高效,在24nm的波长调谐范围内获得了边模抑制比高于40dB的单模光脉冲输出;而在1521.8nm和1550.0nm之间28.2nm的波长调谐范围内,边模抑制比高于35dB。所得到的各个单波长激光脉冲的时域半峰全宽为140~260ps,各个脉冲的光谱半峰全宽皆为0.1nm。     

Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers

Infrared emission from 980‐nm single‐mode high power diode lasers is recorded and analyzed in the wavelength range from 0.8 to 8.0 μm. A pronounced short‐wavelength infrared (SWIR) emission band with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. The SWIR intensity is a measure of the non‐equilibrium carrier concentration in the waveguide, allowing for a non‐destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid‐wavelength infrared (MWIR) thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for an analysis of the spatial damage patterns. The figure shows a side view of a diode laser during catastrophic degradation as recorded by a thermocamera within 5 successive current pulses. The geometry of the device is given in grayscale. The position of the laser chip is indicated by the dotted line. The thermal signatures of the internal degradation of the diode laser are overlaid in color. The bi‐directional spread of the damage along the laser cavity is clearly visible.     

Frequency doubling of wavelength locked laser diOde with a transmission-type filter in a confocal optical configuratiOn

Direct frequency doubling of a wavelength locked laser diode with an optical bandpass filter in a confocal optical configuration is demonstrated. The wavelength of the laser diode was locked in single longitudinal mode oscillation and tuned to phase-matching wavelength of a quasi-phase-matched second harmonic generation device based on a LiTaO₃ Waveguide. Stable blue light of 4.2 mW was obtained for incident power of 48 mW.     

Evaluation of probe lasers employed in optical diagnostics for phase transformation of thin films during excimer laser crystallization

The stability and reliability of probe laser is an important factor affecting the inspection of the phase transformation process of Si thin films during excimer laser crystallization using in-situ time-resolved optical measurements. The changes in 2D intensity profile, peak power density, and beam wander of the commonly used helium–neon (He–Ne) and diode laser are investigated experimentally. It is found that the peak power density of He–Ne laser is higher than that of diode laser, while the total power of He–Ne laser is lower than that of diode laser. Although the instability in the peak power density of He–Ne laser will increase with increasing the operation time, the beam stability of He–Ne laser is better than that of diode laser. For long-time operation (>24 h) of optical measurements, the diode laser is a good candidate of probe laser. Conversely, the diode laser is suitable for the short-time operation (<24 h) of optical measurements because the beam-wander is higher than that of He–Ne laser.     

Efficient 1.8 μm KTiOPO4 optical parametric oscillator pumped within an Nd:YAG/SrWO4 Raman laser

A 1.8?μm optical parametric oscillator (OPO) based on a noncritically phase-matched KTiOPO4 crystal is demonstrated. OPO and stimulated Raman scattering techniques are successfully combined in an acousto-optically Q-switched Nd:YAG/SrWO4 Raman laser. The device efficiently realizes three steps of conversion: from a laser diode wavelength of 808?nm to the fundamental wavelength of 1064?nm; next, to the Stokes wavelength of 1180?nm; and finally to the OPO signal wavelength of 1810?nm. With an incident diode power of 7.2?W and a pulse repetition rate of 15?kHz, an average signal power of 485?mW is obtained with a diode-to-signal conversion efficiency of 6.75%. The beam quality factors (M2) of the signal wave in both horizontal and vertical directions are measured to be 1.7±0.2. The numerical output power results of the system, the thermal lensing, and the stability parameter of the cavity are also discussed.     

改善外腔半导体激光器调谐特性的新方法

基于原有的Littman结构外腔半导体激光器,提出采用一种新的光学方法来实现波长调谐。该方法采用了包含一个旋转楔形棱镜的“光杠杆”系统来降低调谐的机械要求,提高波长选择精度。通过选择不同的楔形棱镜顶角和光线入射角,机械要求可以降低1～2个数量级,波长选择精度也得到相同量级的提高。该方法使Littman结构外腔半导体激光器的调谐特性得到极大的改善,并大大降低了震动的敏感性。