Improved absolute frequency measurement of the 115In+ 5s2 1S0-5s5p3P0 narrowline transition: Progress towards an optical frequency standard

We report on an improved absolute frequency measurement of the 5s ^{2 1} S ₀0-5s5p ³ P ₀ narrowline clock transition at 236.5 nm, for a single, trapped, and laser-cooled ¹¹⁵In ion. Using a narrowline laser as the local oscillator, a linewidth of 43 Hz for the transition is resolved. The uncertainty of the transition frequency’s centroid is 18 Hz, leading to a fractional uncertainty of 1.4 × 10⁻¹⁴. For absolute frequency measurement, we use an optical frequency comb locked to a cesium clock as the reference. The transition frequency is found to be 1267402452900967(63) Hz, averaged over 13 days of separate measurements. The accuracy is about 5.0 × 10⁻¹⁴. We discuss possibilities for further improvement. Original Text ? Astro, Ltd., 2007.     

A 729 nm laser with ultra-narrow linewidth for probing 4S1/2-3D5/2 clock transition of Ca

A Coherent Inc. Ti:sapphire laser MBR-110 is locked to a temperature-controlled high finesse Fabry-Perot cavity supported on an isolated platform. The linewidth is measured by locking the laser to another similar super-cavity at the same time and the heterodyne beatnote between two laser beams that locked to different cavities determines the linewidth. The result shows that the laser's linewidth is suppressed to be 41 Hz. The long-term drift is measured with a femtosecond comb and determined to be ~ 0.1 Hz/s. This laser is used to probe the 4S_1/2-3D_5/2 clock transition of a single ⁴⁰Ca⁺ ion. The Zeeman components of the clock transition with a linewidth of 160 Hz have been observed.     

Practical optical frequency measurement system around 1.5 μm based on an acetylene-stabilized laser-locked optical frequency comb

We have developed a practical and precise frequency measurement system at 1.5 μm telecommunication band. An electro-optic-modulator based optical frequency comb is phase-locked to a dither-free acetylene-stabilized laser to realize an optical frequency comb with frequency uncertainty of 10 kHz (5 × 10⁻¹¹) and the linewidth of 15 kHz. The present frequency comb can be also used as an optical frequency reference grid defined by ITU-T (International Telecommunication Union, Telecommunication Standardization Sector). Using the present frequency measurement system, we have demonstrated the first optical frequency measurement of ¹²C¹⁶O overtone absorption lines around 1.56 μm with the uncertainty of lower than 900 kHz.     

Laser frequency stabilization at 1.5 microns using ultranarrow inhomogeneous absorption profiles in Er:LiYF4

Single-frequency diode lasers have been frequency stabilized to 1.5 kHz Allan deviation over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min, using the frequency reference provided by an ultranarrow inhomogeneously broadened Er³⁺:⁴I_15/2→⁴I_13/2 optical absorption transition at a vacuum wavelength of 1530.40 nm in a low-strain LiYF₄ crystal. The 130 MHz full-width at half-maximum (FWHM) inhomogeneous line width of this reference transition is the narrowest reported for a solid at 1.5 μm. Strain-induced inhomogeneous broadening was reduced by using the single isotope ⁷Li and by the very similar radii of Er³⁺ and the Y³⁺ ions for which it substitutes. To show the practicability of cryogen-free cooling, this laser stability was obtained with the reference crystal at 5 K; moreover, this performance did not require vibrational isolation of either the laser or crystal frequency reference. Stabilization is feasible up to T=25 K where the Er³⁺ absorption thermally broadens to ∼500 MHz. This stabilized laser system provides a tool for interferometry, high-resolution spectroscopy, real-time optical signal processing based on spatial spectral holography and accumulated photon echoes, secondary frequency standards, and other applications such as quantum information science requiring narrow-band light sources or coherent detection.     

Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

A narrow linewidth and frequency-stable probe laser source for the <Superscript>88</Superscript>Sr<Superscript>+</Superscript> single ion optical frequency standard

In this paper, we describe in detail a narrow linewidth and frequency-stable laser source used to probe the 5s ² S _1/2–4d ² D _5/2 clock transition of the ⁸⁸Sr⁺ optical frequency standard. The performance of the laser system is investigated with studies of its frequency drift rates and with high resolution spectra of the ⁸⁸Sr⁺ clock transition. The observed short-term drift rates are typically in the range of 10 to 23 mHz/s, and the current long-term drift rate is 13.9(3) mHz/s. The laser stability, after subtraction of linear drifts, reaches 5×10⁻¹⁶ at an averaging time of 3000 s. This high level of stability is attributed for the most part to stabilization of the reference cavity at the temperature where the coefficient of linear thermal expansion crosses zero. An upper bound for the laser linewidth is given by the observation of a Fourier-transform limited resonance of 4.3 Hz (Δν/ν=1×10⁻¹⁴) on the ⁸⁸Sr⁺ clock transition. The effective averaging time during the linewidth measurements was about 100 s.     

High-efficiency direct-pumped Nd:YVO4-LBO laser operating at 671 nm

The continuous-wave high-efficiency laser emission from Nd:YVO₄ at the fundamental wavelength of 1342 nm and its 671 nm second harmonic obtained by intra-cavity frequency doubling in an LBO nonlinear crystal are investigated under pumping by diode laser at 880 nm (on the ⁴F_3/2→⁴I_13/2 transition). The end-pumped Nd:YVO₄ crystal yielded a continuous-wave output power of 9.6 W at 1342 nm for 18.9 W of absorbed pump power. The slope efficiency measured with respect to the absorbed pump power is 60%. An output of 5.5 W at 671 nm was obtained by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 29%. Comparative results obtained for the pump with a diode laser at 808 nm (on the ⁴F_5/2→⁴I_13/2 transition) are given in order to prove the advantages of the 880 nm wavelength pumping.     

Frequency stabilization of a laser diode to hyperfine structure of the 4D5/2 state of Rb atoms

We observed hyperfine structures of the 4D_5/2 state of ⁸⁵Rb atoms and applied them to the frequency stabilization of a laser diode by using the double resonance optical pumping (DROP). The hyperfine structures of the 4D_5/2 states of ⁸⁵Rb atoms were highly resolved in the Rb vapor cell. We compared the DROP with the optical-optical double resonance (OODR) in the 5S_1/2-5P_3/2-4D_5/2 ladder-type system of ⁸⁵Rb atoms. When we stabilized the frequency of a laser diode to the hyperfine structure of the 5P_3/2(F″ = 4)-4D_5/2(F″ = 3) transition by using the DROP spectrum, the frequency stability was approximately 2.3 × 10^− 12 after 100 s.     

Dielectric relaxation in single crystal NH4H2PO4 in the high-temperature regime

The dispersion curves of the dielectric response in single crystal NH₄H₂PO₄ were obtained in the radio frequency range and below the high-temperature transition at T_p−160 °C. The results reveal dielectric relaxation at low frequency, which is about 10⁵ Hz at 70 °C, and it shifts to higher frequencies (∼3×10⁶ Hz) as the temperature increases. The relaxation frequency was determined from the peak obtained in the imaginary part of the permittivity as well as from the derivative of the real part of the permittivity. The activation energy E_a=0.55 eV, obtained from the relaxation frequency is very close to that derived from the dc conductivity. We suggest that this dielectric relaxation could be due to the proton jump and phosphate reorientation that cause distortion and change the local lattice polarizability inducing dipoles like      

Characteristic properties of Y2SiO5:Ce thin films grown with PLD

Three different gases (nitrogen (N₂), oxygen (O₂) and argon (Ar)) were used as background gases during the growth of pulsed laser deposition (PLD) Y₂SiO₅:Ce thin films. A Krypton fluoride laser (KrF), 248 nm was used for the PLD of the films on silicon (Si) (1 0 0) substrates. The effect of the background gases on the surface morphology, crystal growth and luminescent properties were investigated. All the experimental parameters, the gas pressure (455 mT), the substrate temperature (600 °C), the pulse frequency (8 Hz), the number of pulses (4000) and the laser fluence (1.6±0.2) J/cm² were kept constant. The only parameter that was changed during the deposition was the ambient gas species. The surface morphology and average particle sizes were monitored with scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to determine the crystal structure and composition, respectively. Cathodo- (CL) and photoluminescence (PL) were used to measure the luminescent intensities for the different phosphor thin films. The nature of the particles, ablated on the substrate, is related to the collisions between the ejected particles and the ambient gas particles. The CL and PL intensities also depend on the particle sizes. A 144 h (coulomb dose of 1.4×10⁴ C cm⁻²) electron degradation study on the thin films ablated in the Ar gas environment resulted in a decrease in the main CL intensity peak at 440 nm and to the development of a new very broad luminescent peak spectra ranging from 400 to 850 nm due to the growth of a SiO₂ layer on the surface.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

High-precision frequency measurements of the ν1 + ν3 combination band of C2H2 in the 1.5 μm region

A pair of 1.5 μm semiconductor laser frequency standards have been developed for optical telecommunications use, stabilised to transitions of ¹²C₂H₂ and ¹³C₂H₂, using cavity-enhanced Doppler-free saturation absorption spectroscopy. The absolute frequencies of 41 lines of the ν₁ + ν₃ band of ¹²C₂H₂, covering the spectral region 1520-1545 nm, have been measured by use of a passive optical frequency comb generator, referenced to ¹³C₂H₂ transitions of known frequency. The mean experimental uncertainties (coverage factor k = 1) of the frequency values are 3.0 kHz (type A) and 10 kHz (type B). Improved values of the band origin ν₀, rotational constants B′ and B″, and centrifugal distortion coefficients D′, D″, H′, and H″ are presented.     

Synthesis and laser patterning of Bi-doped Y3Fe5O12 crystals in germanosilicate glasses

New germanosilicate glasses giving the crystallization of yttrium iron garnet Y₃Fe₅O₁₂ (YIG) and Bi-doped YIG, 23Na₂O-xBi₂O₃-(12−x)Y₂O₃-25Fe₂O₃-20SiO₂-20GeO₂ (mol%), are developed, and the laser-induced crystallization technique is applied to the glasses to pattern YIG and Bi-doped YIG crystals on the glass surface. It is clarified from the Mössbauer effect measurements that iron ions in the glasses are present mainly as Fe³⁺. It is suggested from the X-ray diffraction analyses and magnetization measurements that Si⁴⁺ ions are incorporated into YIG crystals formed in the crystallization of glasses. The irradiations (laser power: 32-60 mW and laser scanning speed: 7 μm/s) of continuous wave Yb:YVO₄ fiber laser (wavelength: 1080 nm) are found to induce YIG and Bi-doped YIG crystals, indicating that Fe³⁺ ions in the glasses act as suitable transition metal ions for the laser-induced crystallization. It is suggested that YIG and Bi-doped YIG crystals in the laser irradiated part might orient. The present study will be a first step for the patterning of magnetic crystals containing iron ions in glasses.     

Raman study of BiFeO3 with different excitation wavelengths

Raman spectra of bismuth ferrite (BiFeO₃) over the frequency range of 100-1500 cm⁻¹ have been systematically investigated with different excitation wavelengths. The intensities of the two-phonon modes are enhanced obviously under the excitation of 532 nm wavelength. This is attributed to the resonant behavior when incident laser energy closes to the intrinsic bandgap of BiFeO₃. The Raman spectra of BiFeO₃ excited at 532 nm were measured over the temperature range from 77 to 678 K. Besides the abnormal changes of the peak position and the linewidth of the A₁ mode at 139 cm⁻¹, the prominent frequency shift, the line broadening and the decrease of the intensity for the two-phonon mode at 1250 cm⁻¹ were observed as the temperature increased to Néel temperature (T_N). All these results indicate the existence of strong spin-phonon coupling in BiFeO₃.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Absorption spectra of CO2 and CO2 near 1.05 μm

The absolute line intensities of the Fermi triad 2003i-00001 (i = 1, 2, 3) of ¹²C¹⁶O₂ and ¹³C¹⁶O₂ isotopic species of carbon dioxide were retrieved from Fourier-transform spectra recorded at Doppler limited resolution in the region 9200-9700 cm⁻¹. The accuracy of the line intensity determination is estimated to be better than 15% for most lines. The vibrational transition dipole moments squared and Herman-Wallis coefficients have been determined. The global fittings of the observed line intensities within the framework of the effective operators method have been performed. The fitting results reproduce the data within experimental uncertainty.     

Waveguiding and photoluminescence in Er-doped Ta2O5 planar waveguides

The optimization of erbium-doped Ta₂O₅ thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM∼50 nm) centred at 1534 nm, corresponding to ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.     

Low threshold, actively Q-switched Nd:YVO4 self-Raman laser and frequency doubled 588 nm yellow laser

We reported an actively Q-switched, intracavity Nd³⁺:YVO₄ self-Raman laser at 1176 nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5 mW, 588 nm yellow laser is achieved. The maximum Raman laser output at is 182 mW with 1.8 W incident pump power. The threshold is only 370 mW at a pulse repetition frequency of 5 kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow.     

Terahertz absorption spectrum of D2O vapor

The absorption spectrum of D₂O vapor from 0.2 to 2.0 THz (6.7-67 cm⁻¹) which is associated with rotational modes was measured at one atmosphere using terahertz time-domain spectroscopy (THz-TDS). The linewidth and collisional dephasing times were measured for 26 pure rotational transitions in the ground vibrational state (0 0 0). The temperature dependence of the linewidth (Δν) behaves as Δν ∼ T^−3/4 and the linewidth decrease with increasing temperature is attributed to the 1/r⁶ force of interaction between colliding D₂O molecules.     

X-ray diffraction, Cs and H NMR and thermal studies of CdZrCs1.5(H3O)0.5(C2O4)4·xH2O displaying Cs and water dynamic behavior

A novel mixed cadmium zirconium cesium oxalate with an open architecture has been synthesized from precipitation methods at room pressure. It crystallizes with an hexagonal symmetry, space group P3₁12 (no. 151), a=9.105(5) Å, c=23.656(5) Å, V=1698(1) Å³ and Z=3. The structure displays a [CdZr(C₂O₄)₄]²⁻ helicoidal framework built from CdO₈ and ZrO₈ square-based antiprisms connected through bichelating oxalates, which generates channels along different directions. Cesium cations, hydronium ions and water molecules are located inside the voids of the anionic framework. They exhibit a dynamic disorder which has been further investigated by ¹H and ¹³³Cs solid-state NMR. Moreover a phase transition depending both upon ambient temperature and water vapor pressure was evidenced for the title compound. The thermal decomposition has been studied in situ by temperature-dependent X-ray diffraction and thermogravimetry. The final product is a mixture of cadmium oxide, zirconium oxide and cesium carbonate.