The effect of temperature,defect and strain rate on the mechanical property of multi-layer graphene: Coarse-grained molecular dynamics study

In this work, we investigate the effect of temperature, defect, and strain rate on the mechanical properties of multi-layer graphene using coarse-grained molecular dynamics (CGMD) simulations. The simulation results reveal that the mechanical properties of multi-layer graphene tend to be less sensitive to temperature as the layer increases, but they are sensitive to the distribution and coverage of Stone-Wales (SW) defects. For the same number of defect, there is less decline in the fracture stress and Young's modulus of graphene when the defects have a regular distribution, in contrast to random distribution. In addition, Young's modulus is less influenced by temperature and defect, compared to fracture stress. Both the fracture stress and Young's modulus have little dependence on strain rate.     

低温时效处理对铁磁形状记忆合金Mn2NiGa的结构、相变和磁性能的影响

对在较低温度范围的时效处理铁磁形状记忆合金Mn₂NiGa的结构、相变和磁性进行了研究.研究发现,母相基体析出了细小的析出相,引起了晶格扭曲和畸变,导致了系统内产生了很大的内应力.在其浓度超过晶格的容忍度之后,提升了体系的马氏体相变温度,使母相在时效温度下转变成马氏体相,并在其中测量到高达900 Oe的矫顽力.由于这种马氏体相的逆相变温度大幅提高,外推获得其居里温度在530 K附近.细小析出相的粗化使内应力消失,样品又回到母相状态.观察到细小析出相粗化的两个阈值温度,分别为423 K和 关键词： 铁磁形状记忆合金 2NiGa')" href="#">Mn₂NiGa 时效处理 内应力     

温度与应变率对钽流动应力的影响

 研究了温度在-100～400 ℃、应变率在10^-5～10³ s^-1范围内温度和应变率的变化对钽的流动应力的影响。结果表明,钽的流动应力对温度和应变率的变化相当敏感。同时还就两种本构模型对钽的温度效应与应变率效应的不同处理方法作了比较,指出Zerilli-Armstrong模型能更好地描述温度与应变率对钽流动应力的影响。     

Nb_3Sn超导股线残余应力分析

Nb3Sn超导股线在900K形成,而工作环境是在4.2K,从高温到低温会在Nb3Sn超导股线内部产生残余应力与应变,Nb3Sn超导股线对应力应变十分敏感,过大的应力会使股线的性能严重退化。通过理论计算和数值模拟的方法来计算Nb3Sn超导股线的残余应力与应变。     

直流等离子体化学汽相沉积法合成的金刚石膜的内应力研究

研究了直流等离子体化学汽相沉积(CVD)法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。实验研究表明,金刚石膜的总内应力随沉积条件变化十分敏感。压缩应力是由非金刚石成份及氢等杂质引起的,而伸张应力可由膜中高密度的微空和内面积导致的晶粒间界弛豫模型来解释。     

高温高应变率下纯锆的本构模型研究

 研究了常温至1 073 K、不同应变率下（4.1×10^－4 s^－1～2.8×10³ s^-1）锆的压缩力学性能。结果表明,锆的流动应力对温度和应变率的变化比较敏感,随应变率的提高而增大,随温度的升高而降低。基于位错动力学理论,建立了锆的本构模型,并考虑塑性变形过程中孪晶演化的影响,对模型进行了修正。修正后的本构模型预测结果与实验结果吻合较好,可描述很宽应变率和温度范围内锆的塑性变形行为。     

Ageing of natural rubber under stress

We report a dynamical-mechanical study of stress relaxation at small deformation in a natural (polyisoprene) rubber well above its glass transition temperature . We find that an almost complete relaxation of stress takes place over very long relaxation periods, even though the elastic network is retained. The relaxation rate and the long-time equilibrium modulus are sensitive functions of temperature which do not follow time-temperature superposition. Many characteristic features of non-ergodic ageing response are apparent at both short and very long times. We interpret the observed behaviour in terms of the nature of rubber cross-links, capable of isomerisation under stress, and relate the results to recent models of slow glassy rheology. Received 22 November 1999 and Received in final form 18 January 2000     

Temperature dependence of mechanical properties and pressure sensitivity in metallic glasses below glass transition

An experimental investigation into the variation of the mechanical properties (yield stress, yield strain, elastic moduli, hardness) from sub-ambient temperature (77 K) to that just below the glass transition temperature, of different bulk metallic glasses was conducted. Particular emphasis was on the constraint factor, the ratio of hardness to compressive yield stress, which is taken to be the proxy for the temperature dependence of pressure sensitive plastic flow. All the mechanical properties, except the constraint factor, decrease linearly, throughout the temperature range examined, with temperature and when normalized exhibit certain universal tendencies. The constraint factor was found to increase, monotonically but not necessarily linearly, with temperature. Finite element analyses, with pressure dependent constitutive behaviour, were performed in order to extract pressure sensitivity from the indentation load-displacement curves reported by Schuh et al. in 2004. This, in turn, was used to predict the variation of constraint factor with temperature. A good correlation suggests that the increase in constraint factor with temperature is indeed associated with enhanced pressure sensitivity.     

不同光温环境下玉米苗期叶片的高光谱特性响应分析

光温环境胁迫是影响作物优质高产的一个主要制约因素,传统的作物胁迫监测,敏锐性不足、耗时费力且多为有损检测。近年来随着信息技术的快速发展,高光谱技术能够快速无损的获取作物生理信息,并对逆境胁迫响应进行动态监测,为现代农业的精准化生产和智能化决策提供了数字化支撑,对实现传统农业向精准化、数字化的现代农业转变具有重要意义。以玉米苗期为研究对象,获取不同光温环境下叶片的高光谱数据和生理参数,探究玉米苗期叶片对不同光温环境的响应规律,进行高光谱差异性分析,并构建生理参数的高光谱反演模型。利用相关分析法筛选光谱敏感波段,采用多元散射校正(MSC)、标准正态变量变换(SNV)、Savitzky-Golaay(S-G)平滑相结合的预处理方法,分别与偏最小二乘回归法(PLS)、主成分回归法(PCR)、逐步多元线性回归法(SMLR)三种建模方法组合,以模型相关系数和均方根误差作为模型效果评价指标,探索高光谱反演叶片生理参数模型的最优方法。结果表明：不同光温环境下玉米的高光谱特性在整体上变化趋势一致,但仍存在差异,在500～700 nm波段内,光谱反射率的升高表明光强的增强;在760～900 nm波段内,光谱反射率的升高表明温度的增强;且光温胁迫环境的变化,均可反映在高光谱特性上,波段760～900 nm内光谱的反射率在高温胁迫环境下较高,在弱光胁迫环境下较低,在低温胁迫环境下反射率显著降低;所构建的SPAD和F_v/F_m的反演模型中,建模最优方法为PLS-MSC-SG,模型验证集相关系数分别为0.958和0.976,训练集相关系数分别为0.979和0.995。模型的预测性精度较高,表明利用高光谱技术,可以实现光温环境胁迫下玉米植株的定量监测,提高田间精细化管理水平,为玉米优质高产的智能化管理提供参考依据。     

硅橡胶的动态压缩实验和力学性能研究

 对一种改性硅橡胶材料进行了高应变率动态压缩的实验测试。实验结果表明,这种硅橡胶材料具有很强的应变率敏感性;在室温和高应变率下,表现出典型的聚合物粘弹性特性。实验中应用了入射波整形技术保证试样中的应力平衡及常应变率加载。利用石英晶体监测了试样两端的应力平衡,并应用石英测试技术测量了微弱的透射信号。     

Thermomechanical response of an Ni–Ti–Cr shape-memory alloy at low and high strain rates

The thermomechanical response of an Ni–Ti–Cr shape-memory alloy is investigated at various initial temperatures, over a wide range of strain rates, using an Instron hydraulic testing machine and one of the modified split-Hopkinson-bar systems at the Center of Excellence for Advanced Materials, University of California, San Diego. The transition stress for the stress-induced martensite formation is observed to be quite sensitive to the initial deformation temperature, but the yield stress of the resulting martensite is not. The linear transition stress–temperature relation with a slope of 8.5?MPa?K^?1, obtained in a quasistatic loading regime, seems to remain valid for strain rates up to 500–700?s^?1. The transition stress and the yield stress of the stress-induced martensite show strain-rate sensitivity, increasing monotonically with increasing strain rate. There exists a certain critical strain rate at which the transition stress equals the yield stress of the material. This critical strain rate determines the material's deformation behaviour; the material deforms by the formation of stress-induced martensites and their subsequent yielding, when the strain rate is less than this critical value, and through dislocation-induced plastic slip of the parent austenite, when the strain rate exceeds the critical value. It appears that the critical strain rate increases slightly with decreasing initial temperature.     

A new method to predict the metadynamic recrystallization behavior in a typical nickel-based superalloy

The metadynamic recrystallization (MDRX) behaviors of a typical nickel-based superalloy are investigated by two-pass hot compression tests and four conventional stress-based conventional approaches (offset stress method, back-extrapolation stress method, peak stress method, and mean stress method). It is found that the conventional stress-based methods are not suitable to evaluate the MDRX softening fractions for the studied superalloy. Therefore, a new approach, ‘maximum stress method,’ is proposed to evaluate the MDRX softening fraction. Based on the proposed method, the effects of deformation temperature, strain rate, initial average grain size, and interpass time on MDRX behaviors are discussed in detail. Results show that MDRX softening fraction is sensitive to deformation parameters. The MDRX softening fraction rapidly increases with the increase of deformation temperature, strain rate, and interpass time. The MDRX softening fraction in the coarse-grain material is lower than that in the fine-grain material. Moreover, the observed microstructures indicate that the initial coarse grains can be effectively refined by MDRX. Based on the experimental results, the kinetics equations are established and validated to describe the MDRX behaviors of the studied superalloy.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.     

基于有限元的平面光波导粘接热应力分析

基于有限元理论对阵列光纤和波导芯片粘接情况进行了建模与仿真,分析了在温度变化下不同粘接区域厚度的热应力和微位移的产生和分布,结果表明粘接界面的边缘区域对温度变化最敏感.根据光弹效应定性分析了粘接区域的应力双折射,并利用光束传播法计算了由此微位移所导致的光功率损耗,结果表明若以附加损耗小于0.15 dB的标准考察,则必须要求粘胶厚度的理论值在16 μm以内.总结了温度变化和在相同条件下不同粘胶厚度对平面光波导封装性能的影响规律.     

Monolithic III-V light-emitting devices on Si substrates

The recent progress on the light-emitting devices on Si substrate is reviewed. It is shown, in GaAs on Si, that the reduction of the thermal stress is essential to improve laser lifetime and also to decrease dislocation density. Several methods of reducing the thermal stress, such as the low temperature growth, three layer structure, and the post-growth patterning, are explained. In contrast to the GaAs system, the devices made of indium-related compounds such as InGaAs and InGaAsP are less sensitive to the dislocation and, hence, have superior laser lifetime compared to GaAs devices. The material aspects regarding the light emitters on Si are discussed.     

叶绿素荧光及其在水分胁迫监测中的研究进展

水分胁迫是一种常见的植被胁迫状态,能够减小细胞水势,引起气孔关闭,破坏光合进程。叶绿素荧光是植物光合作用的探针,可以很好的反应植物生理特征,能够快速、灵敏、无损伤和深层次监测水分胁迫状态。由于叶绿素荧光的影响因素较多,使得水分胁迫与叶绿素荧光的关系比较复杂。从光合作用角度阐述了叶绿素荧光的产生原理,分析了叶绿素、叶片结构、冠层结构和环境因子等对叶绿素荧光的影响,总结了叶绿素荧光在水分胁迫监测中的应用;针对叶绿素荧光复杂的生理基础、影响因素及其在水分胁迫监测中的研究进展,提出了一些科学问题和未来的研究方向,为叶绿素荧光的进一步深入研究提供参考,为叶绿素荧光遥感的进一步应用提供理论支持,为陆地生态系统的准确评估提供借鉴。     

Molecular dynamics simulation of mechanical properties of nanocrystalline platinum: Grain-size and temperature effects

A series of molecular dynamics simulations has been carried out to study the mechanical properties of nanocrystalline platinum. The effects of average grain size and temperature on mechanical behaviors are discussed. The simulated uniaxial tensile results indicate the presence of a critical average grain size about 14.1 nm, for which there is an inversion of the conventional Hall-Petch relation at temperature of 300 K. The transition can be explained by a change of dominant deformation mechanism from dislocation motion for average grain size above 14.1 nm to grain boundary sliding for smaller grain size. The Young's modulus shows a linear relationship with the reciprocal of grain size, and the modulus of the grain boundary is about 42% of that of the grain core at 300 K. The parameters of mechanical properties, including Young's modulus, ultimate strength, yield stress and flow stress, decrease with the increase of temperature. It is noteworthy that the critical average grain size for the inversion of the Hall-Petch relation is sensitive to temperature and the Young's modulus has an approximate linear relation with the temperature. The results will accelerate its functional applications of nanocrystalline materials.     

萌发花生种子超弱发光的研究

花生种子萌发过程中超弱发光强度变化呈双峰曲线,分别对应于种子萌发早期事件的吸涨和呼吸激增;自然老化的花生种子,超弱发光明显降低,种子活力指数与超弱发光强度呈显著正相关(r²=0.824);萌发48h的花生种子经0℃低温处理20min,超弱发光强度急剧下降.以上结果表明,植物超弱发光可作为一个敏感的生物物理指标表征种子活力及逆境对植物的伤害.     

Refractive indices of K<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> crystals in an incommensurate phase under uniaxial stresses

The influence of uniaxial mechanical stresses directed along the principal crystallophysical axes on refractiveindex temperature dependences in K₂ZnCl₄ crystals was studied. It is established that the refractive indices ni are quite sensitive to uniaxial stresses. Significant baric shifts of the paraphase–incommensurate–commensurate phase transition points to different temperature regions were observed, which is due to the effect of the uniaxial stress on the K₂ZnCl₄ crystal structure. It is found that applying uniaxial pressure increases the value of the temperature hysteresis of the commensurate–incommensurate phase transition.     

Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition

Ti films with a thickness of 1.6 μm (group A) and 4.6 μm (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 °C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth profile, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 °C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate.