Growth and desorption of indium epitaxial layers investigated by high field microscopy

Growth of indium single crystals on tungsten field emission tips was carried out by deposition of indium from vapour in ultra high vacuum, using substrate temperatures in the range of 293–420 K. Two different tungsten tips were used as the substrate: a perfect W single crystal in one case and a bi-crystal with a distinct grain boundary in the other. No influence of the grain boundary on the epitaxial growth was found. Two orientation relationships were observed mostly: {111}In ∥ {110}W with 〈110〉In ∥ 〈111〉W and {111}In ∥ {100}W with 〈110〉In ∥ 〈110〉W. In the first case the growth was initiated by the indium nucleus created on the ledges of the {110}W plane. A field strength of 0.9 V/Å was found for the evaporation field of indium. The field strength of the desorption of In-W interfacial layer atoms was found to be 4.4–5.2 V/Å. A mechanism of the growth of indium crystals has been proposed.     

Thermal roughening of FEM-clean Pt{110} and its vicinal areas

After heat treatment at ∼1600 K and rapid quenching, thermal roughening through kink formation could be observed on “FEM-clean” Pt{110} and on all its vicinal areas (which are made up of {110} terraces). Noticeable exceptions were the areas between {771} and {331} (including {771}), which are located on the [1̄10] zone. These areas may remain topographically unchanged, or, more likely, may form {111}-microfacets during heat treatment. Upon annealing, the high-temperature roughness on {110} started to decrease at 830 K (formation of an 1 × 2 structure) and reached a minimum at 960 ± 25 K (≡ transition temperature, T_c). Thereafter, it increased precipitously until 1030 K was reached (surface roughening/deconstruction). Surface roughening could be suppressed readily by gas phase and/or bulk impurities (surface segregation). Vapour deposited Si, P, SiO, TiO₂, Al₂O₃ and C (graphite) prevented surface roughening on Pt{110}. All investigations were carried out by FEM.     

Thermal stability of adsorbed CH3NCO on Cu{110} AND Pt{110} from vibrational and photoelectron spectroscopies

The thermal stability of CH₃NCO adsorbed on Cu{110} and Pt{110} is investigated using HREELS, TPD, and ARUPS. CH₃NCO desorbs largely without fragmentation from Cu{110}, but on Pt{110} only about 20% of the adsorbed CH₃NCO desorbs intact, with 80% decomposing on the surface at T > 200 K into CO(a), H(a), CH_x(a), N(a) and NH_y(a) fragments. The kinetics of the surface decomposition were characterised for 220 < T < 300 K by HREELS and the activation energy for CH₃NCO decomposition was found to vary strongly as a function of coverage.     

Lattice reorientation in the shear bands of {112}〈131〉 crystallites in an Fe-3%Si alloy

Subregions (0.1 μm) with the {110}〈113〉 orientation form in shear bands in grains with the {112}〈131〉 orientation in a deformed (? ≈ 50%) polycrystalline Fe-3%Si alloy sample. The relationship between the matrix and the subregions in the shear bands is described by a special misorientation close to Σ5. It is assumed that the subregions that have a {110}〈hhl〉 orientation and special misorientation Σ5 with the surrounding matrix and form in the shear bands of crystallites with orientations other than {111}〈112〉 can serve as anomalous growth nuclei during heat treatment because of a high density of special Σ5 boundaries.     

On the adsorption of oxygen on the Mo{110} surface and its vicinals

The adsorption of oxygen on a Mo{110} surface and four vicinal planes with steps parallel to 〈100〉, 〈110〉 and 〈111〉 directions, is studied by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The work has the goal to elucidate whether O adsorption on Mo{110} is really as different from O adsorption on W{110} as reported, and what is the cause of the apparent discrepancies between the various reported sticking coefficients on stepped surfaces.     

A RHEED study of the growth of antimony on clean tungsten (100)

The epitaxy of antimony, vapour deposited onto atomically clean W(100) in UHV, has been studied from submonolayer up to 60 equivalent monolayers in thickness. The resulting initial surface structures and subsequent three dimensional antimony islands were determined by in situ reflection high energy electron diffraction. For deposition rates of less than three monolayers/minute a series of submonolayer structures were followed by a (1 × 1) pseudomorphic antimony layer. Continuing deposition led to the formation of two types of three dimensional islands growing out of the pseudomorphic layer, one identical with bulk antimony, the other an abnormal fcc phase but with the same lattice constant. Both were oriented such that Sb(100)z.dfnc; W(100) and Sb 〈110〉 z.dfnc; W 〈110〉. Previously a growth sequence differing from that described above has been reported which involves an initial amorphous overlayer and subsequent spontaneous crystallisation. This type of growth could also be duplicated in our experiments for deposition under poor conditions of cleanliness (pressure exceeding 10^?8 Torr) and faster deposition rates (> 10 monolayers/minute).     

A model for growth directional features in silicon nanowires

Long silicon nanowires (SiNWs) grown by laser ablation or by thermal evaporation of monoxide source materials are primarily oriented in the <112> direction, and some in the <110> direction, but rarely in the <100> or <111> directions. We propose a model to explain these SiNW growth directional features. The model consists of two parts. Part one is concerned with mechanism-based criteria and part two with applying these criteria to explain the experimental results. Four criteria are considered: (i) the stability of a Si atom occupying a surface site; (ii) the Si {111} surface stability in the presence of oxygen; (iii) the stepped Si {111} surface layer lateral growth process; and (iv) the effect of dislocations in providing perpetuating {111} steps to facilitate SiNW growth. Analyses of SiNW growth in accordance with these criteria showed that <112> and <110> are the preferred SiNW growth directions, and that <111> and <100> are not. Received: 12 November 2001 / Accepted: 20 November 2001 / Published online: 23 January 2002     

Influence of low-temperature annealing on the microstructure of cryogenically deformed copper

The microstructure formation during annealing of cryogenically deformed copper was studied. It was shown that the primary recrystallization was completed already after a one-hour annealing at 150°C. It was found out that grains with the crystallographic orientation close to {112}〈111〉, {4; 4; 11}〈11; 11; 8〉, {110}〈122〉, and {130}〈132〉 had an advantage in the growth, which, apparently, was associated with a relatively low energy stored during the deformation.     

Special misorientations in localized deformation regions in Fe-3%Si alloy single crystals

Extended regions located at an angle of 20° to the rolling plane are observed inside deformation bands in a (110)[001] Fe-3%Si alloy single crystal at a high strain (～60%). These regions were interpreted earlier as shear bands. The lattice orientation in these bands is close to (110)[001], and their habit plane is parallel to the {112} planes of the deformed {111}〈112〉 matrix. The misorientations between the bands and the matrix group around special misorientations Σ9, Σ19a, Σ27a, and Σ33a, which are characterized by close angles of rotation about axis 〈110〉. During primary recrystallization, the (110)[001] grains growing from the bands retain segments of the corresponding special boundaries with the deformed matrix.     

Contact angle and surface morphology of KCl crystal-melt interface studied by the “bubble method”

The validity of the “bubble method” is discussed for the measurements of contact angles between a crystal and its own melt and for the observations of interface morphology. Experiments were done on KCl crystals pulled in various directions. Gold decoration technique was employed to observe the surface morphology. The measurement of the contact angle a is valid for the 〈100〉 axis of pulling but lacks accuracy for the other directions. The {100} interface shows two dimensional nucleation, curved growth fronts and no trace of a liquid layer. The {110}, {310}and {111} interfaces show steps and pyramids constituted by {100} facets, completely stripped of the melt, and “structureless” regions resulting from freely frozen liquid surface.     

bcc Fe中刃型位错的结构及能量学研究

基于位错理论，利用分子动力学方法建立了〈100〉{010}，〈100〉{011}，1/2〈111〉{011}和1/2〈111〉{112}刃型位错的芯结构，并计算了这四种刃型位错的形成能、位错芯能量和芯半径.计算结果表明：〈100〉{010}和〈100〉{011}刃型位错的形成能比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的要高，这表明〈100〉刃型位错比1/2〈111〉刃型位错更难形成.而〈100〉{010}和〈100〉{011}刃型位错的芯半径比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的小，这说明在1/2〈111〉刃型位错中位于奇异区的原子数多于〈100〉刃型位错，而这些原子要比完整晶体中的原子具有更大的活性.可见，1/2〈111〉刃型位错比〈100〉刃型位错更易运动，且〈100〉刃型位错在bcc Fe中难以形成. 关键词： bcc Fe 刃型位错 分子动力学模拟     

Hydrogen diffusion in the elastic fields of dislocations in iron

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10¹⁴ m^–2 in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉{110}, 〈111〉{112}, 〈100〉{100}, and 〈100〉{110} are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.     

Orientation of chemisorbed species from electron impact and dipole selection rules: The formate ion on Pt{110}

Selection rules in high resolution electron energy loss spectroscopy are shown to permit a determination of the structure of formate ions adsorbed on Pt{110} from data obtained on and off specular along three different azimuthal directions. Long-range dipole scattering indicates that the ion is adsorbed upright bonding, through the two oxygen atoms. Shorter-range impact scattering provides the further information that the ion is coplanar with the 〈110〉 direction and tilted (in the same plane) through at most 10^° from the surface normal.     

Microstructure and texture evolution of strip casting 3 wt% Si non-oriented silicon steel with columnar structure

An Fe-3 wt%Si strip with columnar structure and pronounced {0 0 1}〈0 v w〉 texture was produced using a twin-roll strip caster. Then the as-cast strip was cold-rolled and annealed. The microstructure and texture evolution along the processing steps was investigated. It is found that inhomogeneous microstructure is produced in both cold-rolled and final annealed samples due to the large initial grains. The cold rolling texture is dominated by pronounced a-fiber texture and relatively strong γ-fiber texture. The final recrystallization texture is characterized by {0 0 1}〈0 1 0〉, {0 0 1}〈2 1 0〉, {1 1 0}〈0 0 1〉 texture and a slightly shifted {1 1 1}〈1 1 2〉 component. The microstructural inhomogeneity plays an important role in the texture evolution.     

On the crystallographic structure of small particles of platinum supported on graphite

The shape and crystallography of small metallic particles of platinum on a graphite substrate are studied by high resolution weak beam dark field and microdiffraction electron microscopy techniques. It is found that they have the fcc bulk crystal structure and their shape is a cubooctahedron bounded by {111} and {100} faces. The implications for the catalytic reaction of neopentane on Pt/C catalyst are discussed.     

Island formation during CO/H coadsorption on Pt{111} studied by IR reflection-absorption spectroscopy

The reversible formation of pure CO islands during the coadsorption of CO and H on Pt{111} has been followed by monitoring the internal stretching vibration as well as the metal-carbon stretch of the CO molecule using infrared reflection-absorption spectroscopy. Island formation occurs in the temperature range 100 < T < 180 K and for average CO coverages θ_co < 0.25. This can be inferred from the appearance of bridge-bonded CO, not normally present on Pt{111} in this coverage range, and from the frequency and lineshape behaviour of the on-top absorption band. Depending on temperature and average CO coverage islands with local coverages up to θ'_CO = 0.5 occur but they always coexist with regions of lower local coverage and/or size. There is only a very weak direct interaction between the two species on the surface.     

Preparation of non-oriented silicon steel with high magnetic induction using columnar grains

Columnar grains can lead to detrimental surface ridging and an inhomogeneous microstructure, although their {1 0 0}〈0 v w〉 texture is considered desirable due to their good magnetic properties in non-oriented silicon steel. Based on the hereditary tendency of {1 0 0}〈0 v w〉 texture, the effects of lubrication and heating rate on texture and on final magnetic properties were investigated using a cast slab containing 100% columnar grains. Hot rolling with lubrication, normalization at low heating rate, two-stage cold rolling, and final annealing at 1000 °C helped achieve high performance. As a result, a new non-oriented silicon steel with high magnetic induction (B₅₀=1.82 T) and low core loss (P_1.5=2.35 W/kg) was prepared. The possibility of further performance optimization was also discussed.     

Orientation and bonding of adsorbed CH3NCO on Pt{110} and Cu{110} from vibrational and photoelectron spectroscopies

The bonding and orientation of CH{in3}NCO on Pt{110} and Cu{110} are studied by HREELS, ARUPS, AES, and LEED. CH{in3}NCO is found to adsorb nondissociatively on both Cu{110} and Pt{110} at T = 160 K, bonding primarily through the 2π a′ orbital with the NCO group lying down on the surface and the methyl group largely unperturbed. We propose that the absence of a strong HREELS band at about 2290 cm^?1, which is the liquid phase frequency for the NCO asymmetric stretching mode, combined with the presence of strong bands between 1000 and 1450 cm^?1 provides a “finger-print” for NCO bonded to the surface in a lying-down configuration.     

The nature of the adsorption bond between graphite islands and iridium surface

To reveal the nature of adsorption bonds between two-dimensional graphite islands and iridium (111) and (100) faces, a study has been made of the adsorption of potassium and cesium atoms on the surface of these systems, using thermal desorption and Auger electron spectroscopy, as well as surface ionization and thermionic emission techniques. The graphite islands are shown to be weakly bound to the iridium substrate by Van der Waals forces. The unsaturated valence bonds at the periphery of the graphite islands are “lowered down” on to the metal. The recess between the graphite layer and the metal is filled by adsorbing particles through defects in the graphite layer. The atoms can penetrate into the recess in two ways: at T > 1000 K directly from the flux incident on the surface, and at T < 1000 K also by migration from the graphite island surface. The adsorption capacity of this state is ～ (2?3) × 10¹⁴cm^-2. Thermal destruction of the islands at T > 1900 K liberates the potassium and cesium atoms from under the graphite islands. Our study suggests that the reason for the “raised” position of the islands lies in the valence bonds of the graphite layer being saturated, the valence bonds of the metal and its crystallographic orientation being less significant. Therefore one may expect the graphite layer to be raised also above other metals as well. The filling by cesium of the recess between the graphite layer and iridium and of the adsorption phase on the graphite surface, does not change the general “graphitic” shape of the carbon Auger peak. This cesium results, however, in a pronounced splitting of the negative spike on the carbon peak (which provides information on its location relative to the graphite layer) indicating the appearance in the valence band of graphite near the Fermi level of two narrow (～ 2?3 eV) regions with an enhanced density of states originating from the presence of the alkali metal.     

Peierls-nabarro barrier and stress of a/2 〈111〉 edge dislocation in α-Fe

The Peierls-Nabarro barrier and stress of thea/2〈111〉 edge dislocation on {112} and {110} plane inα-Fe at O K is calculated within the Peierls-Nabarro model. The method proposed by Nabarro is used, however, the sine force law is replaced by more general force laws based on two central interionic potentials inα-Fe. The values of the Peierls-Nabarro stress corresponding to one of the chosen interionic potentials, 3·5×10^?4 μ and 1×10^?4 μ on {112} plane (in the twinning direction) and on {110} plane, respectively, seem to be good estimates of the stress necessary to move edge dislocations inα-Fe at O K.