结合实际刻蚀数据的离子刻蚀产额优化建模方法

刻蚀表面仿真是研究等离子体刻蚀工艺过程机理的重要手段.在刻蚀表面仿真方法中,刻蚀表面演化模型和离子刻蚀产额模型直接决定了刻蚀表面演化结果.但现有的刻蚀表面演化模型不够精确,且目前离子刻蚀产额模型主要来自分子动力学仿真和物理实验,而实际加工过程十分复杂,等效的离子刻蚀产额包含很多因素.针对这些问题,首先对当前的刻蚀表面演化模型进行改进,同时重新定义了离子刻蚀产额模型的优化目标,并利用实际刻蚀加工数据来优化离子刻蚀产额模型.为缩短优化模型所用时间,采用并行方法来加速优化过程.最后,将得到的离子刻蚀产额模型参数应用于采用元胞自动机法的刻蚀工艺实际仿真过程中.实验结果表明,该优化建模方法确实提高了仿真的精确度,同时优化过程所用时间也大大减少.     

基于刻蚀速率匹配的离子刻蚀产额优化建模方法

随着微电子产业的不断发展,刻蚀特征尺度达到纳米级,等离子体刻蚀工艺过程机理研究越来越受到重视.刻蚀表面仿真是研究离子刻蚀特性的重要方法.在离子刻蚀表面仿真中,离子刻蚀产额模型是研究刻蚀机理的重要模型,也是元胞自动机等仿真方法的重要基础.为了解决利用传统方法无法得到准确刻蚀产额模型参数的问题,本文提出一种基于刻蚀速率匹配的离子刻蚀产额优化建模方法,该方法以实际刻蚀速率与模拟刻蚀速率之间的均方差为优化目标,利用基于分解的多目标进化算法来优化离子的刻蚀产额模型参数,并将得到的刻蚀产额模型参数应用到采用元胞方法的刻蚀工艺的实际仿真过程中.实验结果表明了该刻蚀产额优化建模方法的有效性.     

基于三维元胞模型的刻蚀工艺表面演化方法

为了更好地理解和认识刻蚀机理, 并为制造工艺提供优化指导, 采用三维元胞模型研究了刻蚀工艺的表面演化过程, 并着重探讨了离子对表面演化过程的影响.针对刻蚀离子入射角度的求解问题, 提出了一种降维分量拟合方法, 将一个三维曲面拟合问题转化为两个二维曲线拟合进行求解, 对入射点的表面法向量计算实现了快速求解, 与采用最小二乘多项式曲面拟合求解离子入射角度相比, 其计算精度和效率都有较大的提高; 对用于拟合计算的表面元胞的选取方法进行了改进, 提高了拟合的准确度.将这种方法应用到硅刻蚀工艺三维仿真中, 其模拟结果与相关实验结果对比, 验证了该方法对刻蚀工艺描述的有效性. 关键词： 刻蚀 三维元胞模型 表面演化算法 降维分量拟合     

模拟细观非均质材料破坏演化的物理元胞自动机理论

根据非均质材料的细观特征,从基本的能量传递定律出发,建立了一种新的描述细观非均质材料破坏演化的物理元胞自动机(PCA)理论.该理论能够对岩石、混凝土等非均质材料破坏演化进行有效模拟,突破了传统元胞自动机仅限于数学规则运算的框架,使之成为一种有效的物理力学方法.与岩石力学实验结果对比分析表明,PCA模拟结果与实验结果基本符合 关键词： 元胞自动机 细观非均质材料     

元胞方法与蒙特卡洛方法相结合的薄膜生长过程模拟

利用仿真方法从原子尺度研究薄膜生长过程是当前薄膜研究领域的热点. 目前, 仿真方法主要在纳米尺度模型实现, 时空需求很大. 针对这一问题, 本文提出元胞和蒙特卡洛相结合的模拟方法, 实现对微米尺度模型薄膜生长过程的模拟. 利用元胞方法来实现模型表示以及演化计算, 从而降低对内存空间的要求, 提高计算效率, 并使用蒙特卡洛方法计算粒子的扩散概率. 通过对氮化硅薄膜生长过程进行具体研究, 将模拟结果与实际实验结果和分子动力学演化结果进行表面形貌和成分的比较, 验证了该方法的有效性.     

等离子体刻蚀建模中的电子碰撞截面数据

半导体芯片是信息时代的基石,诸如大数据、机器学习、人工智能等新兴技术领域的快速发展离不开源自芯片层面的算力支撑.在越来越高的算力需求驱动下,芯片工艺不断追求更高的集成度与更小的器件体积.作为芯片制造工序的关键环节,刻蚀工艺因此面临巨大的挑战.基于低温等离子体处理技术的干法刻蚀工艺是高精细电路图案刻蚀的首选方案,借助等离子体仿真模拟,人们已经能够在很大程度上缩小实验探索的范围,在海量的参数中找到最优工艺条件.电子碰撞截面是等离子体刻蚀模型的关键输入参数,深刻影响着模型预测结果的可靠性.本文主要介绍了低温等离子体建模的基本理论,重点强调电子碰撞截面数据在数值模拟中的重要作用.与此同时,本文概述了获取刻蚀气体截面数据的理论与实验方法.最后总结了刻蚀相关原子分子的电子碰撞截面研究现状,并展望了未来的研究前景.     

磁性量子元胞自动机拐角结构的理论模拟和实验

磁性量子元胞自动机拐角结构是一种同时含有铁磁耦合和反铁磁耦合的电路. 理论模拟了外加时钟场作用下铸铁磁性材料拐角结构的信号传递. 采用微磁仿真给出了信号传递的磁化演化图, 结果证实了铸铁纳磁体能够实现含有两种冗长耦合结构的稳定转换. 实验制备了相应的拐角结构, 扫描电子显微图和磁力显微图结果显示了成功的电路图案和正确的两种耦合方式信号传递.     

对流作用下枝晶形貌演化的数值模拟和实验研究

合金凝固过程中存在于枝晶尖端液相区的强制对流和自然对流均能改变溶质扩散层厚度,从而会对枝晶形貌产生较大影响.在元胞自动机模型基础上,耦合液体流动方程、热传导方程和溶质对流扩散方程,建立了新的计算微观组织演化的数值模型,并利用该模型研究了强制对流和自然对流对枝晶生长的影响.三维数值模拟结果再现了强制对流作用下等轴枝晶的生长过程,揭示了强制对流对枝晶生长速率和尖端半径的影响特点.同时利用该模型模拟了NH₄Cl-H₂O溶液定向凝固过程中自然对流对柱状晶生长的影响,并采用相应的实验进行验证.模拟结果与实验结果符合良好,从而证明该模型是可靠的,可推广到实际合金系中. 关键词： 元胞自动机 对流 4Cl-H₂O溶液')" href="#">NH₄Cl-H₂O溶液 定向凝固     

基于元胞自动机方法的定向凝固枝晶竞争生长数值模拟

通过耦合温度场模型、溶质扩散方程以及枝晶生长动力学方程等重要因素,建立了一种改进的元胞自动机模型.该模型通过采用偏心算法消除网格各向异性,实现了二维尺度上任意角度枝晶生长的模拟,同时适用于模拟三维尺度上枝晶的生长过程.利用建立的模型开展了定向凝固枝晶竞争生长过程的数值模拟.为了体现本模型的有效性,模拟了透明合金的竞争生长过程,并与实验结果符合良好.镍基高温合金汇聚竞争和发散竞争的模拟结果清楚地展现了不同抽拉速度和枝晶优先生长角度下枝晶的竞争生长过程,并且模拟结果与理论模型相符合.三维枝晶生长的模拟结果表明本模型可以用来模拟三维枝晶一次臂间距的调整过程.     

纯物质枝晶凝固的元胞自动机模型

采用元胞自动机模型模拟了纯物质凝固微观组织演化行为. 与以往采用KGT模型简化考虑不同,采用界面能量守恒方程来自洽地确定液固界面的生长动力学,考察了模型的网格尺寸相关性和时间相关性,并对模型的稳定性进行了验证. 采用这个模型模拟了纯丁二腈在过冷熔体中的自由枝晶生长,并与Glicksman的等温枝晶生长实验(isothermal dendritic growth experiment,IDGE)和LM-K临界稳定性原理进行了对比. 模拟的形貌再现了实验形貌的特征,并且特征参数与理论结果及实验结果符合得很好. 关键词： 元胞自动机 界面 凝固 临界稳定性原理     

Top down nano technologies in surface modification of materials

This article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors.     

Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

A Monte-Carlo etching simulation code modelling the temporal evolution of a silicon substrate submitted to a SF₆/O₂ plasma mixture was developed to complete and improve the experimental results found in an induced coupled plasma reactor (ICP). It reproduces the different plasma-surface interaction mechanisms occurring during this kind of process, predicts the trench profile evolution, calculates the etching rates and gives the chemical composition on the sidewalls. It is also a powerful tool for scientific investigation, with the possibility to add and test new surface processes, which cannot be directly controlled or measured by experiments. The object of this article is to investigate the role of two of them: the angular dependence of the sputtering yield and the redeposition of the sputter products. The study is focused on their topographic and kinetic consequences, and reveals that these mechanisms can explain some common defects appearing like microtrenching and faceting.     

Fabrication of three-dimensional crystalline microstructures by selective ion implantation and chemical etching

We present a new fabrication technique to produce three-dimensional (3D) microstructures on crystalline substrate using selective ion implantation and chemical etching. Localized lattice-damage layers at the specified depth beneath the substrate surface are formed by selective ion implantation. After etching out the partial surface regions and the buried lattice-damage layers by chemical etching, the 3D crystalline microstructures are produced. This technique is demonstrated on LiNbO₃ crystal to produce undercutting and free-standing microstructures, including microwire, microring, and microdisk. The measurement results of micro-Raman spectra show that the used fabrication process does not affect the original crystalline structure. The features of this technique include smooth structure surface, large undercutting range, and auto-etching stop. By using multiple implantations or repeating the proposed process several times, versatile 3D crystalline microstructures can be produced.     

Modification of plasma-etched profiles by sputtering

Two-dimensional etch profiles are modeled for plasma etching. The etch rate dependence on the angle of incidence of the bombarding ions on the etched surface has a sputtering-type yield. The etch profile is advanced in time by an evolution equation for an etch rate proportional to the modified ion energy flux. Approximate analytical expressions for the etch rates are derived as a product of the etch rates in the absence of the sputtering-type yield and a weighting factor that depends on the angle the ion drift velocity makes with the normal to the wafer surface. The weighting factor is determined from experimental measurements of the angular dependence of ion beam etching by sputtering. These etch rates are valid when the ratio of the ion drift speed to the ion thermal speed is large compared to one. The etching is modeled in the ion flux-limited regime for simplicity. The modifications of the shape of etch profiles of a long rectangular trench and a waveguide structure or strip are treated     

基于复合抖动技术的三维轮廓数据压缩方法

三维扫描技术获取的三维轮廓数据体积较大,不便于三维数字博物馆数据的实时传输和显示。针对这个问题,提出了基于复合抖动技术的三维轮廓数据压缩方法。首先,利用虚拟结构光投影系统实现三维轮廓数据的图像存储。然后,对图像的不同通道使用不同的抖动技术进行处理,并将结果保存到8位灰度图中主要的3位或者3幅1位逻辑图中,实现三维轮廓数据的进一步压缩存储。实验表明,与提供的三维模型格式相比提出方法的数据压缩比高达75.9∶1,非常适合三维轮廓数据的实时传输、重建与显示。     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

Fission fragment track etching modelling for the cellular localisation of Neptunium-237 nuclei in rat tissues

Heavy ion recording in dielectric isotropic detectors has a wide range of applications in uranium cartography or dating. In this study, solid state nuclear tracks detectors (SSNTDs) have been applied to localise neptunium-237, in vivo, by means of the neutron-induced fission cartography of neptunium-237 nuclei in organ sections. At the cellular level, a precise localisation can only be achieved with a good understanding of the etch pit evolution during the chemical etching process.

A tailor-made software for modelling the etching process has been developed to simulate the profile of an etched track produced by a neutron-induced fission fragment. This software is based on a model that considers the evolution of the track etching velocity along the damage trail in order to perfectly model the shape of the track.