基于萘[1,2-c:5,6-c]二[1,2,5]噻二唑共轭聚合物的高效光探测器

利用基于萘[1,2-c:5,6-c]二[1,2,5]噻二唑共轭聚合物(NTOD)为给体, 富勒烯衍生物PC71BM为受体, 制备本体异质结聚合物光探测器. NTOD与PC71BM 的共混薄膜吸收范围为300 ~ 830 nm. 通过 对NTOD:PC71BM活性层厚度的调控实现器件暗电流密度的显著降低,增强了探测器的二极管性能,同时保持较高的外量子转化效率. 当活性层厚度为385 nm时,聚合物光探测器在?0.1 V偏压下的暗电流为6.69 × 10–10 A cm?2. 在–0.1 V偏压下器件在440 ~ 800 nm的工作波段的比探测率均超过1013 cm Hz1/2 W?1,处于750 nm的工作波长下达到最大比探测率为1.50 × 1013 cm Hz1/2 W?1,光响应率为0.22 A W?1,这些结果表明基于NTOD:PC71BM的有机光探测器具有广阔的应用前景.     

新型给体-受体型聚合物的合成及其在本体异质结聚合物太阳能电池中的应用

设计、合成了侧链含有强吸电结构的丙二酸二丁酯受体单元与苯并[1,2-b:4,5-b′]二噻吩给体单元交替共聚物PBDTDT,研究了其热学、光学、电化学性质以及与受体PC71BM([6,6]-苯基C71丁酸甲酯)共混作为活性层制备成本体异质结聚合物有机太阳能电池的光伏性质,考察了PBDTDT与PC71BM不同比例时的光伏性能,当聚合物PBDTDT和PC71BM质量比为1∶3制备的器件,其开路电压达到了0.82 V,能量转换效率(PCE)为0.90%,短路电流为3.25 mA/cm2,填充因子FF为0.338,同时将其与同等工艺制备的poly(3-hexylthiophene)(P3HT)太阳能电池的光伏性能进行比较,相同工艺下制备的P3HT电池的开路电压仅为0.55 V,由PBDTDT制备的电池开路电压比P3HT电池的开路电压高出0.29V,同时分析了PBDTDT能量转换效率较P3HT低的原因.     

聚合物:富勒烯薄膜光伏电池的反常高温热稳定性研究

聚合物太阳能电池光电转换效率已接近商业化要求,但稳定性差却成为其实用化瓶颈因素.高温暴晒是聚合物太阳能电池实用化必须面临的环境,因此提高聚合物太阳能电池的热稳定性至关重要.本文以典型的Poly(3-hexylthiophene-2,5-diyl(P3HT):[6,6]-Phenyl-C61-butyric acid methyl ester(PC61BM)基聚合物太阳能电池为研究模型,考察其在不同加热温度下(50~110℃)持续工作时的器件效率变化行为,结果发现电池在高温下表现出一种非常规的性能衰减再回升的行为,具体表现为高温下电池首先表现指数式急速衰减(20%~25%),随后发生反常的性能快速恢复至接近初始效率,之后电池保持超长的高温稳定性.光学显微镜和激光光束诱导电流成像结果证明,顶电极覆盖可以有效抑制活性层中PC61BM的聚集结晶,因而电池的反常热诱导稳定性提升与PC61BM的大量聚集结晶无关.活性层薄膜的紫外可见吸收光谱和器件外量子效率的表征结果证明,持续高温加热没有促进PC61BM二聚体的形成,反而有利于PC61BM二聚体的解离.综合实验分析结果,推测PC61BM在光照下的快速二聚反应及其高温解离是导致电池表现出反常热稳定性提升行为的主要原因.实验结果揭示了初期制备的聚合物太阳能电池实际处于一种亚稳态,对器件进行短暂的前期热退火有利于稳定活性层结构,消除亚稳态,有效提升器件稳定性.本研究工作不仅对富勒烯基聚合物太阳能电池的热诱导反常稳定性提升机理机制给出了解释,而且提供了一种提高聚合物太阳能电池稳定性的新策略.     

聚(3-己基噻吩)作为光谱增感层在有机太阳电池光谱响应增强中的应用

报道了利用聚(3-己基噻吩)(P3HT)作为前置缓冲层来弥补(4,8-双-(2-乙基己氧基)-苯并[1,2-b:4,5-b']二噻吩)-(4-氟代噻并[3,4-b]噻吩(PBDT-TT-F):[6,6]-苯基-C₆₁-丁酸甲酯(PC₆₁BM)共混体相异质结(BHJ)电池对450-600 nm处光谱响应不足的新的器件结构设计思路. 光谱带隙为1.8 eV的PBDT-TT-F 在550-700 nm处有很强的光谱吸收, 在有机太阳电池器件上有很好的应用潜能. 但其在350-550 nm处的吸收不强, 影响了器件对太阳光谱的利用效率. 与此相比, P3HT薄膜的光谱吸收主要在450-600 nm范围内, 同PBDT-TT-F 形成良好的互补关系. 新设计的器件外量子效率(EQE)研究结果表明, 利用P3HT 作为前置缓冲层可以与PBDT-TT-F:PC₆₁BM薄膜中的PC₆₁BM形成平面异质结, 从而拓展了器件在450-600 nm处的光谱响应范围,实现光谱增感作用. 优化P3HT的厚度为20 nm左右, 器件对外输出的短路光电流密度从11.42 mA·cm^-2提高到12.15 mA·cm^-2, 达到了6.3%的提升.     

添加剂和溶剂退火协同优化制备高性能厚膜有机太阳能电池

通过溶剂添加剂1-氯萘(CN)和二硫化碳(CS₂)溶剂退火(SVA)协同优化了基于窄带隙小分子受体的厚膜活性层形貌,揭示了该策略对共混膜形貌的调控机理,研究了其对活性层中的载流子动力学以及器件光伏性能的影响.结果表明,CN添加剂可以有效促进受体材料结晶聚集,CS₂溶剂退火能够进一步提升活性层材料分子堆积的有序性,同时优化给受体材料相分离尺寸,降低共混膜表面的粗糙度,实现了良好的纳米尺寸相分离形貌.基于CN+SVA处理的PM6∶Y6厚膜(300 nm)器件的电荷传输和复合性质得到改善,取得了15.23%的光电转换效率(PCE),显著高于未经处理(PCE=11.75%)和仅用CN处理(PCE=13.48%)的光伏器件.该策略具有良好的适用性,将基于PTQ10∶m-BTP-PhC6器件的光伏性能从13.22%提升至16.92%.     

喷涂法制备大面积倒置聚合物光伏器件

采用喷涂工艺制备了结构为ITO/ZnO/P3HT∶PCBM/V2O5/Ag(P3HT:聚噻吩;PCBM:6,6-苯基-C61-丁酸甲酯)的大面积倒置光伏器件,有效面积为1.0×1.1 cm2。 光谱测试结果表明,退火处理后,P3HT∶PCBM薄膜吸收显著增强,并且产生一定程度的红移。 采用ZnO和V2O5代替LiF和PEDOT∶PSS(聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸盐)作为器件修饰层,避免了PEDOT∶PSS对ITO的腐蚀和LiF潮解,采用Ag代替Al作为金属背电极避免了Al被氧化。 经过后退火处理器件的效率从1.1%提升至1.65%。 器件的稳定性相对于传统结构有了大幅提升,8周后器件效率只衰减10%。     

电极界面缓冲层对P3HT:PC61BM太阳能电池热稳定性的影响

基于溶液法加工制备的聚合物太阳能电池的高温热稳定性是决定器件能否兼容后续高温热封装工艺, 如热压封装、高温原子层沉积(ALD)等的一个关键. 本文分别利用聚(3, 4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)和MoO₃作为阳极缓冲层, 以及ZnO和LiF 作为阴极缓冲层, 制备了结构为氧化铟锡(ITO)/阳极缓冲层/3-己基取代聚噻吩:(6, 6)-苯基C₆₁-丁酸甲酯(P3HT:PC₆₁BM)/阴极缓冲层/Al 的太阳能电池, 系统地比较研究了不同界面缓冲材料对器件光电转换性能及稳定性的影响, 特别是在高温煺火条件下器件的性能稳定性差异. 结果表明, 聚合物太阳能电池的热稳定性同器件的结构以及所用的缓冲层材料有密切的相关性. 其中, 利用MoO₃及ZnO分别作为阳极与阴极界面修饰层的P3HT:PC₆₁BM器件在120-150 ℃的温度范围内能够较好地保持器件的光电转换性能. 这一结果为后续需要高温封装工艺的器件提供了有意义的结构优化指导. 此外, 研究结果还表明利用ZnO作为阴极缓冲层能够改善器件的长时间稳定性.     

以C_(70)衍生物为电子受体的高效聚合物固体薄膜太阳能电池

以PC[70]BM(phenyl C71-butyric acid methyl ester)取代PC[60]BM(phenyl C61-butyric acid methyl ester)作为电子受体材料,以MEH-PPV(poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene])为电子给体材料,制成了本体异质结(bulk heterojunction,BHJ)聚合物太阳能电池.MEH-PPV/PC[70]BM器件在AM1.5G(80 mW/cm2)模拟太阳光的光照条件下得到了3.42%的能量转换效率,短路电流值达到了6.07 mA/cm2,开路电压0.85 V,填充因子为53%.通过紫外可见吸收光谱和外量子效率的研究,发现PC[70]BM作为电子受体,对扩大光谱的吸收范围和增加活性层的吸收系数有明显的作用.同时比较了不同溶剂对该体系器件性能的影响.通过原子力显微镜(AFM)、光暗导I-V曲线等研究,分析了1,2-二氯苯有利于给体相和受体相的微相分离和载流子的传输的原因.     

新型酞菁-苝分子异质结的合成及其光伏性能研究

通过酰胺键将酞菁(电子给体单元)和苝二酰亚胺(电子受体单元)偶联,合成了新型的酞菁-苝分子异质结,其在二氯甲烷、氯仿、四氢呋喃等常用溶剂中有较好的溶解度.紫外光谱分析表明其吸收光谱是酞菁和苝二酰亚胺信号的叠加,出现在300～780 nm之间.该分子摩尔消光系数高达105L mol-1 cm-1数量级,说明具有较宽的太阳光谱覆盖范围和很高的吸光系数.基于这些良好的光谱响应特性,制备了以该分子与[6,6]-苯基-C61-丁酸酸甲酯(PC61BM)为光活性层的有机太阳能电池(OSCs),该电池器件结构为ITO/聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)/酞菁-苝给受体分子:PC61BM/Ca/Al,光电转换效率(PCE)为0.009%,对应的开路电压(Voc)为0.472 V,短路电流(Jsc)为0.104 mA/cm2,填充因子(FF)为0.18.     

给受体共混质量比对P3HT∶PCBM薄膜结构和器件性能的影响

以聚3-己基噻吩(P3HT)为给体、[6,6]-苯基-C61-丁酸甲酯(PCBM)为受体的光伏体系作为研究对象,采用溶剂退火的后处理方法制备薄膜样品,利用紫外-可见(UV-Vis)吸收光谱、原子力显微镜(AFM)、X射线衍射(XRD)等测试手段分别对共混膜样品的形貌和结构进行表征,同时利用熵值统计方法对AFM形貌图像进行分析处理.并在此基础上制备太阳能电池器件,其结构为氧化铟锡导电玻璃/聚3,4-乙撑二氧噻吩∶聚苯乙烯磺酸盐/聚3-己基噻吩:[6,6]-苯基-C61-丁酸甲酯/金属铝(ITO/PEDOT∶PSS/P3HT∶PCBM/Al),研究了给受体共混比例(质量比)对活性层薄膜以及电池性能的影响.结果表明,受体PCBM含量的增加会影响P3HT给体相的有序结晶,当给受体比例为1∶1时,活性层薄膜具有较宽的紫外-可见吸收特征,且具有较好的相分离和结晶度,基于该样品制备的电池器件其光电转换效率达到三种比例的最大值(2.77％).表明退火条件下,改变给受体比例可以影响活性层的微纳米结构而最终影响电池的光电转换效率.     

Diketopyrrolopyrrole-based conjugated polymers as additives to optimize morphology for polymer solar cells

Novel random copolymers for optimizing the morphology of the active layer for high performance organic photovoltaic devices have been demonstrated. Three ternary random copolymers PTBDTDPPSi CN(3/7), PTBDTDPPSi CN(5/5), PTBDTDPPSi CN(7/3) were prepared by polymerization of electron-donating thienyl-substituted benzodithiophene(TBDT) with 2,5-bis[8-(1,1,3,3,5,5,5-heptamethyltrisiloxane-3-yl)octly]-pyrrolo[3,4-c]pyrrole-1,4-dione(DPPSi) and 2,5-dio[5-(5-cyano-5,5-dimethyl-pentyl)]-3,6-dithiophen-2-yl-pyrrolo[3,4-c]pyrrole-1,4-dione(DPPCN) of different ratios. The DPPCN block can well-tune the light absorption and molecular packing, while the DPPSi block is in favor of enhancing the charge mobility. And the formation of organic Si―O―Si networks is beneficial to stabilize the morphology of the active layer. These new copolymers have narrow bandgaps and broaden visible light absorption from 500 nm to 1000 nm. Careful balance of the contents of the trimethoxysilyl group and the cyano group can well-tune the surface energy and morphology of the copolymers. Incorporation of these novel copolymers as additives into the blend of poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl-C60-butyric acid methyl ester(PC_(61)BM) is found to effectively broaden the light absorption, improve the compatibility and morphology of the active layer. As a result, some devices with certain ratios of these copolymers as additives achieve the enhanced efficiency compared with the device based on pristine P3HT:PC_(61)BM.     

Effect of Device Fabrication Conditions on Photovoltaic Performance of Polymer Solar Cells Based on Poly(3‐hexylthiophene) and Indene‐C70 Bisadduct

Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly(3‐hexylthiophene) (P3HT) as donor and indene‐C₇₀ bisadduct (IC₇₀BA) as acceptor was studied systematically. The device fabrication conditions we studied include pre‐thermal annealing temperature, active layer thickness, and the P3HT:IC₇₀BA weight ratios. For devices with a 188‐nm‐thick active layer of P3HT:IC₇₀BA (1:1, w:w) blend film and pre‐thermal annealing at 150°C for 10 min, maximum power conversion efficiency (PCE) reached 5.82% with V_oc of 0.81 V, I_sc of 11.37 mA/cm², and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm².     

Effect of 1,8-Diiodooctane Content on the Performance of P3HT:PC61BM Bulk Heterojunction Photodetectors

A series of polymer photodetectors with device configuration of ITO/PEDOT:PSS/P_3 HT:PC_(61) BM/C_(60)/Al were prepared by using P_3 HT as the donor material and PC_(61) BM as the acceptor material. By regulating the content of 1,8-diiodooctane(DIO)(V/V: 1%, 3%, 5%) as a processing additive, the morphology of the active layer can be greatly improved. With C_(60) as the hole blocking layer, the dark current density of the device can be reduced by about an order of magnitude. When employing 3% DIO(V/V) in the active layer processing, the photodetetcors present the best performance, and the detectivity of the device is 1.52×10~(12) Jones at 540 nm under a bias of-0.1 V. Moreover, it also has a wider linear dynamic range of 60 dB as well as faster response speed(τ_r/τ_f=0.53/0.71 μs) than those of devices with other content of DIO additives.     

In situ current voltage measurements for optimization of a novel fullerene acceptor in bulk heterojunction photovoltaics

The evaluation of the power conversion efficiency (PCE) of new materials for organic bulk heterojunction (BHJ) photovoltaics is difficult due to the large number of processing parameters possible. An efficient procedure to determine the optimum conditions for thermal treatment of polymer‐based bulk heterojunction photovoltaic devices using in situ current‐voltage measurements is presented. The performance of a new fullerene derivative, 1,9‐dihydro‐64,65‐dihexyloxy‐1,9‐(methano[1,2] benzomethano)fullerene[60], in BHJ photovolatics with poly(3‐hexylthiophene) (P3HT) was evaluated using this methodology. The device characteristics of BHJs obtained from the in situ method were found to be in good agreement with those from BHJs annealed using a conventional process. This fullerene has similar performance to 1‐(3‐methoxycarbonyl)propyl‐1‐phenyl‐[6,6]‐methano fullerene in BHJs with P3HT after thermal annealing. For devices with thickness of 70 nm, the short circuit current was 6.24 mA/cm² with a fill factor of 0.53 and open circuit voltage of 0.65 V. The changes in the current‐voltage measurements during thermal annealing suggest that the ordering process in P3HT dominates the improvement in power conversion efficiency. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Low-bandgap poly(thiophene-phenylene-thiophene) derivatives with broaden absorption spectra for use in high-performance bulk-heterojunction polymer solar cells

Two low-bandgap (LGB) conjugated polymers ( P1 and P2) based on thiophene-phenylene-thiophene (TPT) with adequate energy levels have been designed and synthesized for application in bulk-heterojunction polymer solar cells (PSCs). The absorption spectral, electrochemical, field effect hole mobility and photovoltaic properties of LGB TPT derivatives are investigated and compared with poly(3-hexylthiophene) (P3HT). Photophysical studies reveal bandgaps of 1.76 eV for P1 and 1.70 eV for P2, which could effectively harvest broader solar spectrum. In addition, the thin film absorption coefficients of P1 and P2 are 1.6 x 10 (5) cm (-1) (lambda approximately 520 nm) and 1.4 x 10 (5) cm (-1) (lambda approximately 590 nm), respectively. Electrochemical studies indicate desirable HOMO/LUMO levels that enable a high open circuit voltage while blending them with fullerene derivatives as electron acceptors. Furthermore, both materials show sufficient hole mobility (3.4 x 10 (-3) cm (2)/Vs for P2) allowing efficient charge extraction and a good fill-factor for PSC application. High-performance power conversion efficiency (PCE) of 4.4% is obtained under simulated solar light AM 1.5 G (100 mW/cm (2)) from PSC device with an active layer containing 25 wt% P2 and 75 wt% [6,6]-phenyl-C71-butyric acid methyl ester (PC 71BM), which is superior to that of the analogous P3HT cell (3.9%) under the same experimental condition.     

CdSe纳米晶/共轭聚合物太阳电池的制备与性能研究

采用有机金属液相法制备了平均粒径为5 nm的CdSe纳米微球(ns-CdSe), 并将其与共轭聚合物(MEH-PPV或P3HT)共混制备了太阳电池器件. 透射电镜(TEM)、紫外-可见吸收光谱(UV-Vis)及荧光光谱(PL)研究结果表明, CdSe纳米晶呈均匀的球状颗粒, 在近红外区具有良好的吸收和荧光性能; 加入CdSe纳米晶能够有效地淬灭共轭聚合物的荧光. 在AM1.5模拟太阳光(光强为100 mW/cm2)照射下, ns-CdSe/MEH-PPV共混体系太阳电池器件性能测试结果为: 短路电流ISC为1.56 mA/cm2, 开路电压VOC为0.75 V, 填充因子FF为34.5％, 光电转换效率η为0.40%; 对于ns-CdSe/P3HT共混体系, 其ISC为1.93 mA/cm2, VOC为0.65 V, FF为38.4%, η为0.48%.     

碘化铅作为空穴传输层在P3HT:PC61BM聚合物太阳能电池中的增强效果

开发了一类新型阳极界面缓冲材料PbI₂,制备了结构为ITO/PbI₂/P3HT:PC₆₁BM/Al(氧化铟锡导电玻璃/碘化铅/聚三已基噻吩:富勒烯衍生物/铝)的器件,制备工艺包括旋涂和蒸镀,考察了PbI₂在聚合物太阳能电池原型器件ITO/P3HT:PC₆₁BM/Al中的效果。不同碘化铅浓度,退火温度,退火时间,对PbI₂薄膜的质量都会有影响。很显然,高质量的PbI₂薄膜将会带来好的光电转化效率。PbI₂薄膜的透光性,结晶性,以及表面形貌可以用来描述所成薄膜的质量好坏。对能带来最好性能的碘化铅薄膜进行了紫外-可见光谱,X射线粉末衍射(XRD),原子力显微镜(AFM),扫描电子显微镜(SEM)等表征。实验发现,太阳能电池器件的效率对PbI₂浓度比较敏感,最优化的条件为,旋涂浓度为3 mg·mL^-1,100 ℃退火30 min,其电池的开路电压(V_oc)达到0.45 V,短路电流密度(J_sc)为7.9 mA·cm^-2,填充因子(FF)为0.46,与没有界面缓冲材料的器件相比,光电转换效率(PCE)由0.85%提高到1.64%。