Electrical properties of Cd,Zn and S ion-implanted layers in GaAs

The electrical properties of cadmium, zinc, and sulfur ion-implanted layers in gallium arsenide have been measured by the van der Pauw-Hall technique. Ion implantation was performed with the substrates held at room temperature. The dependence of sheet resistivity, surface carrier concentration, and mobility on ion dose and on post-implantation anneal temperature was determined. In the case of 60 keV Cd⁺ ions implanted into n-type substrates, a measurable p-type layer resulted when samples were annealed for 10 minutes at a temperature in the range 600—900°C. After annealing at 300—900°C for 10 minutes, 100 per cent electrical activity of the Cd ions resulted for ion doses ≤ 10¹⁴/cm².

The properties of p-type layers produced by implantation of 85 keV Zn⁺ ions were similar to those of the 60 keV cadmium-implanted layers, in that no measurable p-type behavior was observed in samples annealed below a relatively high temperature. However, in samples implanted with 20 keV Zn⁺ ions a p-type layer was observed after annealing for 10 minutes at temperatures as low as 300°C.

Implantation of sulfur ions into p-type GaAs substrates at room temperature resulted in the formation of a high resistivity n-type layer, evcn before any annealing was performed. Annealing at temperatures up to 200°C or above 600°C lowered the resistivity of the layer, while annealing in the range 300—500°C eliminated the n-type layer.     

The Effects of Thermal Treatments on Microstructure Phosphorus-Doped ZnO Layers Grown by Thermal Evaporation

The ZnO films doped with 3 wt% phosphorus (P) were produced by activating phosphorus doped ZnO (ZnO:P) thin films in oxygen (O₂) ambient at 600°C for 30, 60, 90 and 120 min, respectively. As-deposited films doped with phosphorus are highly conductive and n type. All the films showed p-type conduction after annealing, in an O₂ ambient atmosphere. The activation energies of the phosphorus dopant in the p-type ZnO under O₂ ambient gases indicate that phosphorus substitution on the O site yielded a deep level in the gap. With a further increase of the annealed durations, the crystalline quality of the ZnO:P sample is degraded. The best p-type ZnO:P film deposited at 600°C for 30 min shows a resistivity of 1.85 Ω cm and a relatively high hole concentration of 5.1 × 10¹⁷cm^–3 at room temperature. The films exhibit a polycrystalline hexagonal wurtzite structure without preferred orientation. The mean grain sizes are calculated to be about 60, 72, 78, 85 and 90 nm for the p-type ZnO films prepared at 600°C for 30, 60, 90 and 120 min, respectively. Room temperature photoluminescence (PL) spectra of the ZnO film exhibit two emission bands — paramount excitonic ultraviolet (UV) emission and weak deep level visible emission. The excellent emission from the film annealed at 600°C for 30 min is attributed to the good crystalline quality of the p-type ZnO film and the low rate of formation of intrinsic defects at such short duration. The visible emission consists of two components in the green range.     

Changes in optical absorption in iron garnet films due to impurity incorporation

The incorporation of impurities in films of Bi-substituted iron garnets grown by liquid phase epitaxy has been studied by successively adding small amounts of SiO₂ and CaCO₃ to the melt before film growth. It is found that very small additions of CaCO₃ to the melt profoundly influences the optical absorption coefficient and the electrical properties. The impurity absorption ofn-type YIG doped with Si⁴⁺ and Pb²⁺ ions is investigated and its wavelength dependence compared to that ofp-type YIG. The optical transitions involved in the impurity absorption of iron garnets are discussed in terms of transition reaction, photon energy and dependence on the impurity concentration. Depending on the photon energy, one or several transitions may give rise to impurity absorption.     

Study of synthetic diamonds by dynamic nuclear polarization-enhanced13C nuclear magnetic resonance spectroscopy

Four I_b-type synthetic diamond crystals were studied by dynamic nuclear polarization (DNP)-enhanced high resolution solid state¹³C nuclear magnetic resonance (NMR) spectroscopy. The home built DNP magic-angle-spinning (MAS) NMR spectrometer operates at a field strength of 1.9 T and the highest DNP enhancement factor of synthetic diamonds came near to 10³. Comparing with I_b-type natural diamonds, the¹³C NMR linewidths of synthetic diamonds in static spectra are broader. The¹³C spin-lattice relaxation time and DNP polarization time of synthetic diamond are shorter than those of I_b-type natural diamond. From the hyperfine structure of the DNP enhancement curve, four kinds of nitrogen-centred free radicals could be identified in synthetic diamond.     

Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

Electrical activity of grain boundaries (GB) in polycrystalline silicon films can stand duty as an additional factor of action on its properties. At present paper it has been studied polycrystalline silicon epitaxial films grown by CVD-method at low-resistivity n ⁺-type poly-Si substrates. A p ⁺-n junction of 0,5 m deep was formed by ion implantation of boron. The effect of thermal annealing (TA) on I-V characteristics of the p ⁺-n-n ⁺ structures was studied. It was founded that the region with negative resistivity is appeared in I-V characteristic after TA in vacuum at 800°C for 1 hour. Investigations by means of C-V and temperature characteristics of samples show that the S-image of the I-V characteristics is caused by phosphorus diffusion along GB that give rise to conduction of the charge carriers along GB. For the first time it was shown the opportunity of the creation of low-cost poly-Si S-diode by TA.     

Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide

Electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K. Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges. A density of charged surface states of about 10¹² cm⁻² and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×10¹⁷ cm⁻³. Forp-type samples with hole densities ranging from 6×10¹⁵ to 4.3×10¹⁸ cm⁻³ the estimated density of negatively charged surface states was below 2×10¹¹ cm⁻², and the band bending was not more than a few kT.     

Formation of p-type ZnMgO thin films by In-N codoping method

In-N codoped ZnMgO films have been prepared on glass substrates by direct current reactive magnetron sputtering. The p-type conduction could be obtained in ZnMgO films by adjusting the N₂O partial pressures. The lowest resistivity was found to be 4.6 Ω cm for the p-type ZnMgO film deposited under an optimized N₂O partial pressure of 2.3 mTorr, with a Hall mobility of 1.4 cm²/V s and a hole concentration of 9.6 × 10¹⁷ cm⁻³ at room temperature. The films were of good crystal quality with a high c-axis orientation of wurtzite ZnO structure. The presence of In-N bonds was identified by X-ray photoelectron spectroscopy, which may enhance the nitrogen incorporation and respond for the realization of good p-type behavior in In-N codoped ZnMgO films. Furthermore, the ZnMgO-based p-n homojunction was fabricated by deposition of an In-doped n-type ZnMgO layer on an In-N codoped p-type ZnMgO layer. The p-n homostructural diode exhibits electrical rectification behavior of a typical p-n junction.     

The nonlinear optical property and photoinduced anisotropy of?a?novel azobenzene-containing fluorinated polyimide

A novel azobenzene-containing fluorinated polyimide was synthesized. The nonlinear optical property and photoinduced birefringence of a polyimide thin film were investigated. Large third-order nonlinear refraction (n ₂=−4.49×10⁻¹¹ cm²/W) was observed in the polyimide thin film by carrying out Z-scan measurement. The polyimide thin film exhibited larger nonlinear refraction than that of a mono-azo dye doped PMMA thin film (n ₂=−1.63×10⁻¹² cm²/W). The photoinduced birefringence of the polyimide thin film (▵ n∼10⁻²) under different pump intensities was investigated; it was much larger than that of the mono-azo dye doped PMMA thin film (▵ n∼10⁻³). Moreover, the time constants for birefringence growth and relaxation processes were determined.     

Electrically active defect annealing in neutron and in ion-damaged Si

Hall effect and electrical conductivity measurements of defect annealing in 1 ohm-cm n-type and 2 ohm-cm p-type silicon were made following neutron irradiation at ～50°C. Measurements were also made following 400-keV B¹¹ ion implantation into a 100 ohm-cm n-type Si substrate. As the neutron fluence is increased the electrical effects of the damage eventually outweigh those of the chemical dopants, and further changes in the electrical properties become small. Conversely, significant electrical recovery upon annealing begins only when the electrical effects of the remaining damage become comparable to those of the chemical dopants. This condition will occur at higher anneal temperatures for higher fluence irradiations. The neutron fluence dependence of the damage and the annealing is interpreted in terms of the neutron energy per cm³. E, spent in atomic processes divided by the number/cm³, N, of electrically active dopants. When E/N ≤ 0.5 keV the electrical measurements show that the predominant defect annealing occurs below 400°C. However, when E/N > 0.5 keV electrical measurements emphasize the annealing at temperatures > 400°C. After 500°C annealing, energy levels in neutron damaged Si are observed at E_v +0.1 and E_v +0.15 eV in p-type and at E_c -0.33 eV in n-type Si. Application of the E/N criteria to room temperature implant-doped Si predicts that the electrical effects will be dominated by lattice damage even if all the implanted ions are substitutional.     

ion-implanted junctions and conducting layers in SiC

n-type conducting layers have been formed in n- and p-type hexagonal SiC and n-type cubic SiC by implanting ions from column V of the periodic table; N, P, Sb, or Bi. The implantations were made at room temperature and with energies ranging from 5 to 300 keV. The implanted layers have been evaluated by van der Pauw-Hall effect and sheet resistivity measurements and by scanning electron microscopy for anneal temperatures ranging from 1100 to 1800°C. Type conversion of the implanted layers to n-type has been observed after a 750°C anneal. Considerable lattice reordering is suggested from the observed carrier mobility values after annealing at 1600°C.

We have attempted to form p-type layers in n-type SiC by implanting Re, B, Al, Ga, and Tl. Application of anneal procedures identical to those used to form n-type layers have not resulted in measurable p-type layers.

The p-n junctions formed by the donor-implanted layers have been evaluated as a function of anneal temperature. After annealing at 1200°C there is direct evidence of a thick semi-insulating region between the n-layer and the substrate which produces a p-i-n diode characteristic. The thickness of this i-layer can be substantially reduced with additional annealing, resulting in abrupt junction behavior for the diode.

Well-annealed p-n junctions have been characterized as a function of operating temperature over the range of 23 to 400°C. The forward current-voltage behavior of these diodes is dominated by generation and recombination of the carriers in the depletion layer over most of the temperature range. There is some indication of diffusion currents at the highest temperatures. Avalanche breakdown behavior is observed for reverse bias.

The capacitance-voltage behavior of these diodes as a function of frequency and temperature indicate the presence of a deep level which can be explained in terms of the bulk properties of the material.     

Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon

This work reports the investigations on the effects of the hydrogenation process of thin film polycrystalline n⁺pp⁺ mesa silicon cells using MW-ECR plasma in a conventional PECVD system. Different operating parameters such as MW-ECR power, annealing temperature and the doping level of the emitter region were varied. The n⁺-type emitter regions were obtained by phosphorus diffusion in a conventional furnace using an oxide doping source containing phosphorus (P507 or P509 solutions, from Filmtronics Inc.). The MW hydrogenation was carried out at a sample temperature of 400°C for 60 min. Both types of emitters formed from P507 and P509 showed V _oc of 155 mV and 206 mV, which increased linearly to 305 mV and 331 mV, respectively, after hydrogenation when the MW power varied from 200 to 650 W. However, the sheet resistances of the n⁺ emitter region showed a slight increase depending upon hydrogenation power because of its etching. In a further study, hydrogenated samples were annealed in neutral or forming gas (FG) and we observed interesting results on V _oc in the presence of FG. The FG annealing temperature study revealed a strong dependence of V _oc on MW power, which affected the etching level of emitter and emitter dopant concentration, which controls the diffusion of hydrogen ions during post-hydrogenation step. The results were explained in detail by combining the effects of MW power and dopant level of the emitter.     

Excimer-laser etching on silicon

Studies have been made of poly- and single Si etching induced by excimer-laser irradiation of the silicon surfaces in halogenated gases. Etching was investigated for different conduction types, impurity concentrations and crystallographic planes. Chlorine atoms accept electrons generated in photoexcited, undoped p-type Si, thus becoming negative ions which are pulled into the Si. However, the n⁺-type Si is etched spontaneously by Cl^– as a result of the availability of conduction electrons. Fluorine atoms, with the highest electronegativity, take in electrons independent of whether the material is n- or p-type. And thus, the easy F^– ion penetration into Si causes spontaneous etching in both types. New anisotropic etching for n⁺ poly-Si is investigated because of its importance to microfabrication technology. Methyl methacrylate (MMA) gas, which reacts with Cl atoms, produces a deposition film on the n⁺ poly-Si surface. The surface, from which the film is removed by KrF (5 eV) laser irradiation, is etched by Cl atoms, while the film remains on the side wall to protect undercutting. However, with the higher photon energy for the ArF (6.4 eV) laser, the Si-OH bonds are broken and electron traps are formed. These electrontrapping centers are easily annealed out in comparison to the plasma-induced centers. Pattern transfer etching for n⁺ poly-Si has been realized using reflective optics. The problems involved in obtaining finer resolution etching are discussed.     

化学气相沉积法制备金刚石膜截面微区Raman分析

采用微区Raman散射分析方法研究化学气相沉积法制备的金刚石膜的横截面.金刚石膜从衬底面到生长面不同位置具有不同特征的Raman谱,依此对膜中的金刚石、石墨和非晶碳成分进行分析.衬底面附近区域对应金刚石膜生长过程的成核阶段,非晶碳成分含量较高,相应于1200—1600cm^-1波段较大的散射强度和存在较强的荧光背底.膜厚增大,非晶碳成分中sp³结构成分首先减少,而sp²结构成分和石墨成分的减少相对缓慢.而生长面附近区域只有比较单纯的晶体金刚石 关键词：     

Dirac's conjecture about constraints

Combining Costa's theory with our algorithm, we recalculate Cawly's counterexample which contains ⁿ -type constraints. The result shows that Dirac's conjecture holds true whether or not there are ⁿ -type constraints.     

Role of zinc and nickel impurities in high-temperature superconductors

The local changes produced in the electronic structure and their effect on the physical properties of the superconducting and normal phases when zinc and nickel are substituted for copper are examined on the basis of a multiband p-d model. It is shown that strong electronic correlations suppress the S=1 configuration of Ni²⁺ and cause the superposition of the S=1/2 and S=0 states of nickel. The change in the density of states in p-and n-type systems is studied, and the peculiarity of Zn impurity for p-type systems and Ni impurity for n-type systems is shown. The universal dependence of the T _c on the residual resistance in lightly doped superconductors and deviations from it in optimally doped systems are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 596–600 (April 1999)     

Effects of hydrogen and oxygen on the electrochemical corrosion and wear-corrosion behavior of diamond films deposited by hot filament chemical vapor deposition

A diamond film was deposited on silicon substrate using hot filament chemical vapor deposition (HFCVD), and H₂ and O₂ gases were added to the deposition process for comparison. This work evaluates how adding H₂ and O₂ affects the corrosion and wear-corrosion resistance characteristics of diamond films deposited on silicon substrate. The type of atomic bonding, structure, and surface morphologies of various diamond films were analyzed by Raman spectrometry, X-ray diffraction (XRD) and atomic force microscopy (AFM). Additionally, the mechanical characteristics of diamond films were studied using a precision nano-indentation test instrument. The corrosion and wear-corrosion resistance of diamond films were studied in 1 M H₂SO₄ + 1 M NaCl solution by electrochemical polarization. The experimental results show that the diamond film with added H₂ had a denser surface and a more obvious diamond phase with sp³ bonding than the as-deposited HFCVD diamond film, effectively increasing the hardness, improving the surface structure and thereby improving corrosion and wear-corrosion resistance properties. However, the diamond film with added O₂ had more sp² and fewer sp³ bonds than the as-deposited HFCVD diamond film, corresponding to reduced corrosion and wear-corrosion resistance.     

Microstructure and tribological performance of self-lubricating diamond/tetrahedral amorphous carbon composite film

In order to smooth the rough surface and further improve the wear-resistance of coarse chemical vapor deposition diamond films, diamond/tetrahedral amorphous carbon composite films were synthesized by a two-step preparation technique including hot-filament chemical vapor deposition for polycrystalline diamond (PCD) and subsequent filtered cathodic vacuum arc growth for tetrahedral amorphous carbon (ta-C). The microstructure and tribological performance of the composite films were investigated by means of various characterization techniques. The results indicated that the composite films consisted of a thick well-grained diamond base layer with a thickness up to 150 μm and a thin covering ta-C layer with a thickness of about 0.3 μm, and sp³-C fraction up to 73.93%. Deposition of a smooth ta-C film on coarse polycrystalline diamond films was proved to be an effective tool to lower the surface roughness of the polycrystalline diamond film. The wear-resistance of the diamond film was also enhanced by the self-lubricating effect of the covering ta-C film due to graphitic phase transformation. Under dry pin-on-disk wear test against Si₃N₄ ball, the friction coefficients of the composite films were much lower than that of the single PCD film. An extremely low friction coefficient (∼0.05) was achieved for the PCD/ta-C composite film. Moreover, the addition of Ti interlayer between the ta-C and the PCD layers can further reduce the surface roughness of the composite film. The main wear mechanism of the composite films was abrasive wear.     

Controlled doping of rf sputtered germanium films

Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 10¹⁵ to 2×10¹⁸/cm³ while the electron concentrations could be varied from 10¹⁵ to 5×10¹⁷/cm³ using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.     

Properties of ion implanted silicon,sulfur, and carbon in gallium arsenide

Work is described in which chromium-doped semi-insulating gallium arsenide has been successfully doped n-type with ion implanted silicon and sulfur, and p-type with ion implanted carbon. A dilute chemical etch has been employed in conjunction with differential Hall effect measurements to obtain accurate profiles of carrier concentration and mobility vs. depth in conductive implanted layers. This method has so far been applied to silicon-and sulfur-implanted layers in both Cr-doped semi-insulating GaAs and high purity vapor grown GaAs. In the case of sulfur implants, a strong diffusion enhancement has been observed during the annealing, presumably due to fast-diffusing, implantation-produced damage. Peak doping levels so far obtained are about 8 × 10¹⁷ electrons/cm³ for silicon implants and 2 × 10¹⁷ electrons/cm³ for sulfur implants. Mobility recovery has been observed to be complete except in regions near the surface which are heavily damaged by the implantation.     

AC conductivity of porous silicon: A fractal and surface transport mechanism?

Summary In this paper we report on the frequency dependence of the AC conductivity of porous silicon in the range 10 Hz-100 kHz. Two types of testing devices have been fabricated on three different series of samples formed electrochemically using as a starting materialptype,n ⁻-type andn ⁺-type silicon substrates. For frequencies less than 20-40 kHz the conductivity is found to follow a sublinear frequency dependence. This behaviour is typical of a carrier transport mechanism determined by an anomalous diffusion process. At higher frequencies we find that surface states influence the transport mechanism. This suggests a double-channel transport mechanism: one related to porous-silicon “volume” properties and the other more connected to the “surface” itself. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettiore di Luce) Torino, 12–13 October 1995.