HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride.     

Adsorption and thermal decomposition of diethylaluminum hydride on Si(1 0 0)-2 × 1

Chemistry of organoaluminum compounds on silicon surfaces forms a foundation of chemical vapor deposition (CVD) for the formation of metal-semiconductor interconnects. We have applied multiple internal reflection Fourier-transform infrared spectroscopy and thermal desorption mass spectrometry to analyze the chemistry of one of the promising Al-CVD precursors, diethylaluminum hydride, on a Si(1 0 0)-2 × 1 surface. Diethylaluminum hydride adsorbs molecularly on this surface both at room temperature and at 100 K. Thermally induced surface reaction consumes the monolayer of adsorbed organoaluminum molecule. The only hydrocarbon product is ethylene desorbing from the silicon surface around 600 K. Despite a clean reaction that removes carbon from the surface, aluminum deposition is not significant because of the formation of alane products.     

Adsorption of glycine on a NiAl(1 1 0) alloy surface

The adsorption and desorption of glycine (NH₂CH₂COOH), vacuum deposited on a NiAl(1 1 0) surface, were investigated by means of Auger electron spectroscopy (AES), low energy electron diffraction (LEED), temperature-programmed desorption, work function (Δφ) measurements, and ultraviolet photoelectron spectroscopy (UPS). At 120 K, glycine adsorbs molecularly forming mono- and multilayers predominantly in the zwitterionic state, as evidenced by the UPS results. In contrast, the adsorption at room temperature (310 K) is mainly dissociative in the early stages of exposure, while molecular adsorption occurs only near saturation coverage. There is evidence that this molecularly adsorbed species is in the anionic form (NH₂CH₂COO⁻). Analysis of AES data reveals that upon adsorption glycine attacks the aluminium sites on the surface. On heating part of the monolayer adsorbed at 120 K is converted to the anionic form and at higher temperatures dissociates further before desorption. The temperature-induced dissociation of glycine (<400 K) leads to a series of similar reaction products irrespective of the initial adsorption step at 120 K or at 310 K, leaving finally oxygen, carbon and nitrogen at the surface. AES and LEED measurements indicate that oxygen interacts strongly with the Al component of the surface forming an “oxide”-like Al-O layer.     

Formation and hydrogenation of p(2 × 2)-N on Pt(1 1 1)

The formation of a well-ordered p(2 × 2) overlayer of atomic nitrogen on the Pt(1 1 1) surface and its reaction with hydrogen were characterized with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The p(2 × 2)-N overlayer is formed by exposure of ammonia to a surface at 85 K that is covered with 0.44 monolayer (ML) of molecular oxygen and then heating to 400 K. The reaction between ammonia and oxygen produces water, which desorbs below 400 K. The only desorption product observed above 400 K is molecular nitrogen, which has a peak desorption temperature of 453 K. The absence of oxygen after the 400 K anneal is confirmed with AES. Although atomic nitrogen can also be produced on the surface through the reaction of ammonia with an atomic, rather than molecular, oxygen overlayer at a saturation coverage of 0.25 ML, the yield of surface nitrogen is significantly less, as indicated by the N₂ TPD peak area. Atomic nitrogen readily reacts with hydrogen to produce the NH species, which is characterized with RAIRS by an intense and narrow (FWHM ∼ 4 cm⁻¹) peak at 3322 cm⁻¹. The areas of the H₂ TPD peak associated with NH dissociation and the XPS N 1s peak associated with the NH species indicate that not all of the surface N atoms can be converted to NH by the methods used here.     

In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(1 0 0) surface

The intermediates of thermal decomposition of 1,3-disilabutane (SiH₃CH₂SiH₂CH₃, DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH₄Si₂, which is the first observation on Si(1 0 0) surface, and further decomposed to CH₄Si between 150 and 900 K. CH₄Si lost hydrogen and formed SiC over 900 K.     

Core level photoemission and STM characterization of Ta/Si(1 1 1)-7 × 7 interfaces

We present the results of scanning tunneling microscopy (STM) and photoemission spectroscopy (PES) of the Ta/Si(1 1 1)-7 × 7 system after deposition of Ta at substrate temperatures from 300 to 1250 K. The coverage of Ta varied from 0.05 up to 2.5 of a monolayer (ML). STM shows that at 300 K and coverage less than 1 ML, a disordered chemisorbed phase is formed. Deposition on a hot surface (above 500 K) produces round 3D clusters randomly distributed on the surface. Cluster height and their diameter are found to change drastically with annealing temperature and the Ta coverage. Analysis of photoemission data of the Si 2p core levels shows that at room temperature and at coverage ?1 ML core level binding energy shifts and intensity variations of Si surface related components are observed, which clearly indicate that the reaction starts already at 300 K. Shifts in the binding energy, changes of the peak shapes and intensity of the Ta 4f doublet at higher temperatures can be explained by the formation of stable silicide on the surface.     

Nitrogen plasma cleaning of Ge(1 0 0) surfaces

We propose a dry method of cleaning Ge(1 0 0) surfaces based on nitrogen plasma treatment. Our in situ Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) analyses demonstrate that surface contamination remaining after wet treatment was effectively removed by nitrogen radical irradiation at low substrate temperatures. The nitrogen plasma cleaned Ge(1 0 0) surface shows a well-ordered 2 × 1 reconstruction, which indicates the formation of a contamination-free Ge(1 0 0) surface with good crystallinity. We discuss the possible reaction mechanism considering how chemisorbed carbon impurities are removed by selective C-N bond formation and subsequent thermal desorption. These findings imply the advantage of plasma nitridation of Ge surfaces for fabricating nitride gate dielectrics, in which we can expect surface pre-cleaning at the initial stage of the plasma treatment.     

Oxygen induced facet formation on Rh(2 1 0) surface

Oxygen induced nanometer-scale faceting of the atomically rough Rh(2 1 0) surface has been studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). The Rh(2 1 0) surface completely covered with nanometer-scale facets when annealed at ≥550 K in the presence of oxygen. LEED studies reveal that the pyramidal faceted surface is characterized by three-sided nanoscale pyramids exposing (7 3 1), (7 3 −1) and (1 1 0) faces. A clean faceted surface was prepared through the use of low temperature surface cleaning method using the reaction with H₂ while preserving (“freezing”) the pyramidal facet structure. The resulting clean faceted surface remains stable for T ∼ 600 K and for higher temperatures; the faceted surface irreversibly relaxes to the planar surface. STM measurements confirms the formation of nanopyramids with average pyramid size ranging from 12 to 21 nm depending upon the annealing temperature. The nanopyramidal faceted Rh surface may be used as a potential template for the growth of metallic nanoclusters and for structure sensitive reactions.     

CO oxidation over Ru(0 0 0 1) at near-atmospheric pressures: From chemisorbed oxygen to RuO2

RuO₂(1 1 0) was formed on Ru(0 0 0 1) under oxygen-rich reaction conditions at 550 K and high pressures. This phase was also synthesized using pure O₂ and high reaction temperatures. Subsequently the RuO₂ was subjected to CO oxidation reaction at stoichiometric and net reducing conditions at near-atmospheric pressures. Both in situ polarization modulation infrared reflection absorption spectroscopy (PM-IRAS) and post-reaction Auger electron spectroscopy (AES) measurements indicate that RuO₂ gradually converts to a surface oxide and then to a chemisorbed oxygen phase. Reaction kinetics shows that the chemisorbed oxygen phase has the highest reactivity due to a smaller CO binding energy to this surface. These results also show that a chemisorbed oxygen phase is the thermodynamically stable phase under stoichiometric and reducing reaction conditions. Under net oxidizing conditions, RuO₂ displays high reactivity at relatively low temperatures (?450 K). We propose that this high reactivity involves a very reactive surface oxygen species, possibly a weakly bound, atomic oxygen or an active molecular O₂ species. RuO₂ deactivates gradually under oxidizing reaction conditions. Post-reaction AES measurements reveal that this deactivation is caused by a surface carbonaceous species, most likely carbonate, that dissociates above 500 K.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.     

Competition between associative and dissociative adsorption of 1,2-dihalogenated benzenes on Si(1 0 0)2 × 1: Formation of dihalocyclohexadiene, halophenyl and phenylene adstructures

The room temperature (RT) adsorption of 1,2-difluorobenzene (1,2-DFB), 1,2-dichlorobenzene (1,2-DCB) and 1,2-dibromobenzene (1,2-DBB) on Si(1 0 0)2 × 1 have been investigated by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Both XPS and TPD data show that the relative degree of dissociative to associative adsorption of the dihalogenated benzene (DXB) appears to increase with decreasing electronegativity of the halogen atom (X). In particular, the C 1s intensity ratios for the C-H and C-Si components to the C-X component are found to be 2, 3 and 9.6 for 1,2-DFB, 1,2-DCB and 1,2-DBB, respectively. These results indicate that 1,2-DFB, like benzene, exclusively adsorbs molecularly as a difluorocyclohexadiene adspecies on Si(1 0 0)2 × 1 while 1,2-DBB adsorbs predominantly with double debromination to form 1,2-phenylene. The majority of 1,2-DCB (75%) is found to adsorb molecularly, with the rest (25%) undergone single or double dechlorination to form chlorophenyl and phenylene, respectively. All three DXB molecules appear to have similar coverage as benzene. The two molecular desorption features for 1,2-DFB and 1,2-DCE are observed with desorption maxima at 460 K and 540 K similar to those found for benzene, which suggests that the dihalocyclohexadiene adstructures involve similar bonding through the benzene ring. In accord with the XPS data, no molecular desorption feature is observed for 1,2-DBB on the 2 × 1 surface. Further decomposition of the resulting phenylene adstructures is evident from the desorption fragment, C₂H₂, found at 610 K and 740 K. Recombinative desorption of HCl and HBr above 880 K are also found for 1,2-DCB and 1,2-DBB, respectively. The observed differences between associative and dissociative adsorption for the three DXB adsorbates could be attributed not only to the large difference in the C-X bond strength but also to the relative contributions from inductively withdrawing and resonantly donating electrons exerted by the halogen (X) atoms to the benzene ring.     

Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface

The adsorption of S₂ on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S₂ at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms S_n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuS_x nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface.     

Step flow observed on top of oxidized CoAl(1 0 0) surface

Clean and oxidized surfaces of CoAl(1 0 0) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), high resolution electron energy loss spectroscopy (HREELS), and scanning tunnelling microscopy (STM). The regrowth or step flow of terraces was observed at 1150 K. The correlation between the growth of oxide and the step flow on the CoAl(1 0 0) surface is discussed in this paper.     

Growth of Ag thin films on ZnO(0 0 0 −1) investigated by AES and STM

The growth of Ag films on ZnO(0 0 0 −1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%).     

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF₂/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF₂ film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF_x complexes which desorb at these temperatures.     

Adsorption and decomposition of triethylsilane on Si(1 0 0)

The adsorption and decomposition of triethylsilane (TES) on Si(1 0 0) were studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). TPD and HREELS data indicate that carbon is thermally removed from the TES-dosed Si(1 0 0) surface via a β-hydride elimination process. At high exposures, TPD data shows the presence of physisorbed TES on the surface. These species are characterized by desorption of TES fragments at 160 K. Non-thermal decomposition of TES was studied at 100 K by irradiating the surface with 600 eV electrons. ESD of mass 27 strongly suggests that a β-hydride elimination process is a channel for non-thermal desorption of ethylene. TPD data indicated that electron irradiation of physisorbed TES species resulted in decomposition of the parent molecule and deposition of methyl groups on the surface that desorbed thermally at about 900 K. Without electron irradiation, mass 15 was not detected in the TPD spectra, indicating that the production of methyl groups in the TPD spectra was a direct result of electron irradiation. XPS data also showed that following electron irradiation of TES adsorbed on Si(1 0 0), carbon was deposited on the surface and could not be removed thermally.     

Configuration of pentacene (C22H14) films on Si(1 0 0)-2 × 1 studied by NEXAFS

Pentacene films on Si(1 0 0)-(2 × 1) surface at 300 K were investigated using near edge X-ray absorption fine structure (NEXAFS) at the carbon K-edge. NEXAFS spectra show that pentacene molecules are chemisorbed on the Si(1 0 0)-(2 × 1) surface for monolayer with flat-laying and predominantly physisorbed on the Si(1 0 0)-(2 × 1) surface for multilayer films with an upright molecular orientation. Absorption angle of pentacene molecules were measured through π^∗ transition. The angles between the double bond and the silicon surface were 35-55°, 65° and 76° at monolayer, 24 and 48 nm pentacene deposited on the Si(1 0 0) surface, respectively. We observed that the intermediate flat-laying phase is favored for monolayer coverage, while the films of molecules standing perpendicular to the Si(1 0 0) surface are favored for multilayer coverage.     

Formation of Co ultrathin films on Si(1 1 1): Growth mechanisms, electronic structure and transport

The AES, EELS, AFM and resistance measurement investigations have been performed to determine the growth mechanism, electronic structure and resistance-thickness dependence of Co layers on silicon at the thickness range from submonolayer up to several monolayer coverage. These layers were obtained under UHV high-rate deposition with using re-evaporation of Co from a Ta foil. The layer-by-layer growth of Co on Si(1 1 1) with some light segregation of Si has been found on the AES data. An enlarged and reduced concentration of valence electrons in the interface Si layer at the thickness ranges 0-1 Å and in the Co film at d = 1-2 Å has been observed. Resistance measurement of the Co film showed a fast decrease of the resistance down to some value limited by quantum-size effect in accordance with the formation of a two-dimensional Co phase at d = 1-2 Å.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

Gd adsorption on the Mo(2 1 1) surface

The adsorption of Gd thin layers on the Mo(2 1 1) face was investigated by using Auger electron spectroscopy (AES), low electron energy diffraction (LEED), scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS) and measurements of the work function changes (Δφ). It was found that at 300 K Gd does not form any dilute chain structures and from the very beginning of the adsorption process Gd forms a densely packed layer. The dilute p(4 × 1) chain structure was observed by LEED after annealing thin layers (θ < 1 ML) to temperatures above 770 K. STM images confirm the existence of the p(4 × 1) structure islands. The intermixing of the substrate and adsorbate atoms takes place.