Synthesis, characterization, and optical properties of In2O3 semiconductor nanowires

In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure.     

A new route to self-assembled tin dioxide nanospheres: fabrication and characterization

Nearly monodispersed self-assembled tin dioxide (SnO2) nanospheres with intense photoluminescence (PL) were synthesized using a new wet chemistry technique. Instead of coprecipitating stannous salts, bulk tin (Sn) metal was oxidized at room temperature in a solution of hydrogen peroxide and deionized water containing polyvinylpyrrolidone (PVP) and ethylenediamine (EDA). SnO2 nanocrystals were produced with diameters of approximately 3.8 nm that spontaneously self-assembled into uniform SnO2 nanospheres with diameters of approximately 30 nm. Analysis was performed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, UV-vis absorption spectroscopy, PL spectroscopy, and fluorescence lifetime measurements. The SnO2 nanospheres displayed room-temperature purple luminescence with an intense band at 394 nm (approximately 3.15 eV) and a high quantum yield of approximately 15%, likely as a result of emission from the surface states of SnO2/PVP complexes. The present study could open a new avenue to large-scale synthesis of self-assembled functional oxide nanostructures with technological applications as purple emitters, biological labels, gas sensors, lithium batteries, and dye-sensitized solar cells.     

CuS/TiO2纳米管异质结阵列的制备及光电性能

利用水热反应制备了CuS/TiO2纳米管异质结阵列,采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)和X射线衍射谱(XRD)等手段表征了异质结阵列的表面形貌和晶体结构.电流-电压曲线结果表明,CuS/TiO2纳米管异质结阵列具有明显的整流效应.根据表面光电压谱和相位谱,在376～600 nm之间,CuS/TiO2纳米管异质结阵列表现为p型半导体特征,电子在表面聚集;在300～376 nm之间表现为n型半导体特征,空穴在表面聚集;在376 nm处异质结阵列的表面光伏响应为零.CuS/TiO2和CuS/ITO之间界面电场的不同导致异质结在不同波长范围内表面电荷聚集的差异.光电化学性能测试发现,以CuS/TiO2纳米管异质结阵列为光阳极组成的光化学太阳电池,在大气质量AM 1.5G,100 mW/cm2标准光强作用下具有0.4%的光电转换能力.     

N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂,金属Ga和NH3为原料合成了GaN微纳米结构,并研究了N2流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、Xray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明,随着N2流量的增加,产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为p型;并对产物GaN的形貌转变机理进行了分析。     

Luminescence Property and Synthesis of Sulfur-doped ZnO Nanowires by Electrochemical Deposition

"Sulfur-doped zinc oxide (ZnO) nanowires were successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-ynthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are niform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron pectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescences observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge ultraviolet peaks at 378 and 392 nm and weak green emissions at 533 and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420, and 434 nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The PL spectrum shows that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires."     

N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂, 金属Ga和NH₃为原料合成了GaN微纳米结构, 并研究了N₂流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、X-ray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明, 随着N₂流量的增加, 产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为n型;并对产物GaN的形貌转变机理进行了分析。     

ZnO纳米线阵列的电沉积法制备及表征(英文)

利用直流电沉积方法在多孔氧化铝模板的孔洞中生成锌纳米线,在氧气氛围中,于800°C下氧化2h,将氧化铝中的锌氧化成氧化锌.本研究利用氧气氛围进行锌的氧化,大大提高了传统方法的氧化锌纳米线的制备效率.用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)对其形貌及成分进行表征和分析,结果表明,氧化铝模板的有序孔洞中填充了大尺寸、均匀连续的多晶态氧化锌纳米线.纳米线具有约1000:1的高纵横比,其长度等于氧化铝模板的厚度,直径约为80nm.光致发光(PL)光谱表明,氧化锌纳米线在504nm处有由于氧空位引起的较强蓝绿光发射.这为进一步研究ZnO/AAO组装体发学性质和开发新型功能器件提供了基础.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚     

Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

Spectral studies of SnO2 nanofibres prepared by electrospinning method

Tin oxide nanofibres with 100-150 nm diameter has been prepared, for the first time by calcination of poly(vinyl acetate) (PVAc)/SnO2 composite fibres prepared by electrospinning method as precursor. Scanning electron microscopic images revealed cylindrical morphology of the fibres after calcination at 600 degrees C. Both, X-ray diffraction (XRD) and Raman spectral data confirmed the presence of phase pure tetragonal rutile tin oxide after calcination process. Room temperature photoluminescence (PL) spectra of tin oxide nanofibres under excitation at 325 nm wavelength show a strong green emission at 525 nm with a band gap of 2.41 eV. FT-IR spectra confirmed the formation of pure tin oxide after calcination at 600 degrees C and complete removal of PVAc during calcination. UV-vis spectrum of the fibres showed absorption at 315 nm due to the direct electron transfer in tin oxide.     

Preparation and electrical properties of ultrafine Ga2O3 nanowires

Uniform and well-crystallized beta-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor-liquid-solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Omega.m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.     

Transmission electron microscopy study of pseudoperiodically twinned Zn2SnO4 nanowires

The ternary oxide functional nanomaterial Zn2SnO4 has been synthesized by the thermal evaporation method. The products in general contain numerous kinds of nanowires. In the present work, a remarkable type of Zn2SnO4 nanowires with a pseudoperiodical twinning structure has been investigated by transmission electron microscopy (TEM). These nanowires with a diameter of about 100 nm grow along the 111 direction. High-resolution TEM examinations suggest that a large fraction of the (111) twin boundaries are extended to a thickness of a few nanometers. The twining plane for the perfect case is localized on the Zn atom layer.     

Synthesis of europium-doped zinc oxide micro- and nanowires

Single crystalline Eu³⁺-doped wurtzite ZnO micro- and nanowires were synthesized by a chemical vapor deposition method (CVD). The nanostructures were grown by autocatalytic mechanism at walls of an alumina boat. The structure and properties of the doped ZnO is fully characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectrometry (EDX), scanning and transmission electron microscopy (SEM and TEM), and photoluminescence (PL) methods. The synthesis was carried out for 10 min giving vertically aligned nanowires with mean diameter of 50–400 nm and with length of up to several microns. The nanowires were grown along ±[0001] direction. The concentration of Eu³⁺ dopant in the synthesized nanowires was varied from 0.7 to 0.9 at %. The crystal structure and microstructures of the doped nanomaterials were discussed and compared with undoped ZnO. The photoluminescence spectra show that emission of doped samples were shifted towards orange-red region (2.02 eV) relative to undoped zinc oxide nanostructures (2.37 eV) due to Eu³⁺ intraionic transitions from ZnO/Eu.     

Synthesis and Photocatalytic Activity of One-dimensional ZnO-Zn2SnO4 Mixed Oxide Nanowires

Mixed oxide photocatalysts, ZnO-Zn2SnO4 (ZnO-ZTO) nanowires with different sizes were prepared by a simple thermal evaporation method. The ZnO-ZTO nanowires were characterized with a scanning electron microscope, X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive spectrometer, and X-ray photoelectron spectrThe photocatalytic activity of the ZnO-ZTO mixed nanowires were studied by observing the photodegradation behaviors of methyl orange aqueous solution. The results suggest that the ZnO-ZTO mixed oxide nanowires have a higher photocatalytic activity than pure ZnO and Zn2SnO4 nanowires. The photocatalyst concentration in the solution distinctly affects the degradation rate, and our results show that higher photodegradation efficiency can be achieved with a smaller amount of ZnO-ZTO nanowire catalyst, as compared to the pure ZnO and ZTO nanowires. Moreover, the photocatalytic activity can also be enhanced by reducing the average diameter of the nanowires. The activity of pure ZnO and ZTO nanowires are also enhanced by physically mixing them. These results can be explained by the synergism between the two semiconductors.     

Photoluminescence resulting from semiconductor-metal solid solution observed in one-dimensional semiconductor nanostructures

A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.     

A simple large-scale synthesis of very long aligned silica nanowires

A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO₂ nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of ∼50 nm. The PL spectra of the SiO₂ nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO₂ nanowires were investigated.     

Template Synthesis and Characterization of Cu2O/TiO2 Coaxial Nanocable for Photocatalysis

Coaxial nanocable consisted of p-type Cu₂O nanowires and n-type TiO₂ nanotubes arrays was prepared in the porous anodic aluminum oxide(AAO) template via the sol-gel method and subsequent electrodeposition method. X-ray diffraction analysis identified an anatase structure of the TiO₂ nanotubes and cubic structure of the Cu₂O nanowires. The obtained samples were also characterized by scanning electron microscopy(SEM), transmission electron microscopy(TEM) and energy dispersive X-ray spectroscopy(EDS). The diffrence of open circuit potential of the coaxial nanocable electrode was larger than that of the TiO₂ nanotubes electrode under ultraviolet illumination, which means doping with Cu₂O could improve the photovoltage effectively. Meanwhile, nanocable arrays exhibited a high activity for photodegrading Rhodamine B under Xe lamp irradiation and the photocatalysis degradation efficiency was up to 98.69% after degradation for 7 h. The enhanced photocatalytic activity could be attributed to the high migration efficiency of photoinduced electrons, which may suppress the charge recombination effectively.     

Synthesis and Characterization of ZnO Nanowires

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with a hexagonal wurtzite crystal structure. ZnO prepared in nanowire form may be used as a nanosized ultraviolet light-emitting source. In this study, ZnO nanowires were prepared by vapor-phase transport of Zn vapor onto gold-coated silicon substrates in a tube furnace heated to 900 ?C. Gold serves as a catalyst to capture Zn vapor during nanowire growth. Size control of ZnO nanowires has been achieved by varying the gold film thickness…     

Catalytic synthesis and photoluminescence of gallium nitride nanowires

Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50–60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.     

Synthesis and properties of delafossite CuAlO<Subscript>2</Subscript> nanowires

Ultra-long and uniform CuAlO₂ nanowires were successfully synthesized within a porous anodic aluminum oxide template by means of sol–gel method at 900 °C. The results of X-Ray diffraction indicate that the obtained CuAlO₂ nanowires have a single delafossite structure. The scanning electron microscopy and transmission electron microscopy show that the CuAlO₂ nanowires have a uniform diameter with about 50 nm and a length up to 10 μm. Room-temperature photoluminescence measurement of nanowires exhibits an ultraviolet near-band-edge emission around 350 nm (3.54 eV).