ZnO:Ga晶体对硬X射线的时间及能量响应

 介绍了ZnO:Ga晶体对重复频率快脉冲硬X 射线的时间响应,利用X射线荧光分析仪测量了ZnO:Ga晶体对10～100 keV硬X射线的能量响应。结果表明:ZnO:Ga晶体对硬X射线响应的上升时间为316 ps,半高宽为440 ps;对40 keV以上的X射线的能量响应很平坦。该晶体可以作为一种新颖的硬X射线探测元件。     

Timing performance of ZnO:Ga nanopowder composite scintillators

The implementation of nanocrystal‐based composite scintillators as a new generation of ultrafast particle detectors is explored using ZnO:Ga nanopowder. Samples are characterized with a spectral‐time resolved photon counting system and pulsed X‐rays, followed by coincidence time resolution (CTR) measurements under 511 keV gamma excitation. Results are comparable to CTR values obtained using bulk inorganic scintillators. Bringing the ZnO:Ga nanocrystal's timing performance to radiation detectors could pave the research path towards sub‐20 ps time resolution as shown in this contribution. However, an efficiency boost when placing nanopowders in a transparent host constitutes the main challenge in order to benefit from sub‐nanosecond recombination times. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Tuning the phase transition of ZnO thin films through lithography: an integrated bottom‐up and top‐down processing

An innovative approach towards the physico‐chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol–gel method and then exposed to hard X‐rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating agents in the sol allows easy‐to‐pattern films made by an organic–inorganic matrix to be deposited. The exposure to hard X‐rays strongly affects the nucleation and growth of crystalline ZnO, triggering the formation of two intermediate phases before obtaining a wurtzite‐like structure. At the same time, X‐ray lithography allows for a fast patterning of the coatings enabling microfabrication for sensing and arrays technology.     

高灵敏GaAs探测器及应用

在ICF实验研究中,我们应用新研制的经快中子辐照处理过的GaAs晶体材料做成的光导电探测器首次实验观察到各种结构的内爆靶发射的硬X光时间波形信号以及硬X光的空间角分布。这种探测器对X光有很高的灵敏度(约10~(-18)C/keV),有快的响应(约100ps),具有抗干扰能力强,灵敏度高体积小,用于ICF实验的X光诊断有独特优点。     

Radiation-induced formation of ZnO nanoparticles on the ZnSe single-crystal surface

The possible formation of ZnO nanocrystals was studied as a result of radiolysis of a ZnSe crystal surface exposed to zinc vapor and irradiated with gamma rays and in producing ZnSe-ZnO heterostructures. Under ⁶⁰Co gamma radiation in air, nanocrystals ～27 nm in size are formed from nanoscopic ZnO nuclei. Under a mixed flux of gamma rays and thermal-neutron radiation, a twin structure is formed in the host ZnSe lattice and ZnO is removed. The oxide layer is also destroyed under proton irradiation in vacuum. It is found that the growth of ZnO nanocrystallites causes a manyfold increase in the luminescence intensity in the ～600-nm band and in microhardness and also a decrease in the resistance and blocking and threshold voltages irrespective of polarity. Thus, gamma irradiation brings about the formation of light-emitting ZnSe-ZnO: Zn semiconductor structures with a p-n junction.     

一台基于串级二极管技术的高强度脉冲硬X射线源

介绍了利用串级二极管产生高强度脉冲硬X射线的方法及其辐射场参数。以“闪光二号”加速器为平台,通过适应性改造,产生快前沿电压脉冲;研制了两级阻抗1 Ω串级二极管,通过串联分压降低二极管端电压、各级二极管电子束独立打靶在空间叠加形成高强度均匀辐射场。解决了悬浮电极绝缘支撑、二极管阴极均匀发射等技术难题,实现了串级二极管的稳定工作。在总电压约700 kV、电流约310 kA条件下,X射线平均能量87 keV,500 cm2上的平均能注量36 mJ/cm2,剂量均匀性（最大值比最小值）达到2∶1。     

软X射线条纹相机静态能量响应的绝对标定

软X光扫描相机是对软X光时间特性进行研究的主要诊断工具.利用同步辐射作为光源,采用美国NIST的标准,对它的静态能谱响应进行了绝对标定,给出了X光条纹相机在100—1000eV能区的绝对谱响应,不确定度小于23%.     

Polarization control of an X‐ray free‐electron laser with a diamond phase retarder

A diamond phase retarder was applied to control the polarization states of a hard X‐ray free‐electron laser (XFEL) in the photon energy range 5–20 keV. The horizontal polarization of the XFEL beam generated from the planar undulators of the SPring‐8 Angstrom Compact Free‐Electron Laser (SACLA) was converted into vertical or circular polarization of either helicity by adjusting the angular offset of the diamond crystal from the exact Bragg condition. Using a 1.5 mm‐thick crystal, a high degree of circular polarization, 97%, was obtained for 11.56 keV monochromatic X‐rays, whereas the degree of vertical polarization was 67%, both of which agreed with the estimations including the energy bandwidth of the Si 111 beamline monochromator.     

A monolithic Fresnel bimirror for hard X‐rays and its application for coherence measurements

Experiments using a simple X‐ray interferometer to measure the degree of spatial coherence of hard X‐rays are reported. A monolithic Fresnel bimirror is used at small incidence angles to investigate synchrotron radiation in the energy interval 5–50 keV with monochromatic and white beam. The experimental set‐up was equivalent to a Young's double‐slit experiment for hard X‐rays with slit dimensions in the micrometre range. From the high‐contrast interference pattern the degree of coherence was determined.     

Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. Taguchi method was used to find the optimal deposition parameters including oxygen partial pressure, argon partial pressure, substrate temperature, and sputtering power. By employing the analysis of variance, we found that the oxygen and argon partial pressures were the most influencing parameters on the electrical properties of ZnO:Ga films. Under the optimized deposition conditions, the ZnO:Ga films showed acceptable crystal quality, lowest electrical resistivity of 2.61 × 10⁻⁴ Ω cm, and high transmittance of 90% in the visible region.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

氧化锌薄膜光电功能材料研究的关键问题

氧化锌薄膜光电功能材料是近年来新发展起来的研究课题,由于它在短波长光电信息功能材料方面具有潜在的应用前景而备受关注.为了开发ZnO结型光电器件,目前首先需要解决高质量ZnO单晶薄膜的外延及p型掺杂等关键问题.综合国内外的研究结果,结合我们的工作,叙述了利用多晶格匹配原理通过过渡层在Si衬底上异质外延高质量ZnO薄膜,介绍了用SiC作过渡层生长ZnO薄膜的有关问题.对ZnO的p型掺杂,分析了制备p型ZnO的困难和利用Ⅲ-Ⅴ族共掺杂方法生长p型ZnO的作用和优点.     

Competition between ferromagnetic and anti-ferromagnetic couplings in Co doped ZnO with vacancies and Ga co-dopants

Spin-polarized first-principles electronic structure and total energy calculations have been performed to better understand the magnetic properties of Co doped ZnO (ZnO:Co) with vacancies and Ga co-dopants. The paramagnetic state of ZnO:Co, in which Co ions lose their magnetic moments, has been found to be unstable. The total energy results show that acceptor-like Zn vacancies and donor-like Ga co-dopants render the anti-ferromagnetic (AFM) and ferromagnetic (FM) states to be more favorable, respectively. With O vacancies, ZnO:Co has been found to be in the weak FM state. These magnetic properties can be understood by the calculated O- and Zn-vacancies and Ga co-dopant induced changes of the electronic structure, which suggest that AFM and FM Co-Co couplings are mediated by O 2p-Co majority (↑)-spin 3d hybridized states in the valence band of ZnO and O-vacancy-derived p states or Ga sp states in the ZnO band gap, respectively. For ZnO:Co with Zn vacancies (Ga co-dopants) the AFM (FM) coupling outweighs the FM (AFM) coupling and results in the AFM (FM) state, while for ZnO:Co with O vacancies, both the FM and AFM couplings are enhanced by similar degrees and result in the weak FM state. This study reveals a competition between FM and AFM couplings in ZnO:Co with vacancies and Ga co-dopants, the detailed balancing between which determines the magnetic properties of these materials.     

Sapphire hard X‐ray Fabry–Perot resonators for synchrotron experiments

Hard X‐ray Fabry–Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al₂O₃, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X‐rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X‐ray cavity resonance and measurements using scanning electron microscopic and X‐ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.     

模拟X射线热-力学效应电子束能谱的优化研究

实验室中主要采用电子束辐照来研究材料的热-力学响应规律,并以此为依据对材料抗核爆X射线的能力进行评估,此种评估方式忽略了电子束与X射线与物质相互作用中的差异,必然造成评估偏差。利用MCNP软件和约束最小二乘法,以1keV和3keV黑体X射线为优化对象,以电子束在介质中产生与X射线相同的能量沉积剖面为优化目的,对用于辐照铝、铜和钽三种材料的电子束能谱进行了优化计算,分别得到了它们的等效电子能谱。结果表明:等效电子能谱能够获得与相应的X射线一样的能量沉积剖面,可用作评估材料抗核爆X射线能力的依据;但等效电子谱与X射线和辐照材料均相关,应用中需依据辐照材料做出相应调整。     

Three‐dimensional coherent diffractive imaging on non‐periodic specimens at the ESRF beamline ID10

The progress of tomographic coherent diffractive imaging with hard X‐rays at the ID10 beamline of the European Synchrotron Radiation Facility is presented. The performance of the instrument is demonstrated by imaging a cluster of Fe₂P magnetic nanorods at 59 nm 3D resolution by phasing a diffraction volume measured at 8 keV photon energy. The result obtained shows progress in three‐dimensional imaging of non‐crystalline samples in air with hard X‐rays.     

掺Ga对ZnO电子态密度和光学性质的影响

采用密度泛函理论下的第一性原理平面波赝势方法,研究了掺Ga对纤锌矿ZnO电子态密度和光学性质的影响.从晶体配位场理论分析了掺Ga前后ZnO的成键情况及态密度的变化.计算得到掺Ga后电子浓度为2.42×10²¹ cm^-3,ZnO的载流子浓度提高了10⁴倍.比较分析掺Ga前后ZnO的介电函数、复折射率、吸收光谱和反射光谱可得,ZnO光吸收边向高能端移动,光学带隙增大.在可见光区,ZnO光吸收系数与反射率减小,光透过率显著提高,使ZnO:Ga成为 关键词： 密度泛函理论 态密度 光学性质 ZnO:Ga     

Mechanical stress X‐ray emission from crystal sugar

We report a new phenomenon of generating X‐rays by fracturing a well‐known material, crystal sugar, in a vacuum. The generated X‐rays had a maximum energy of 250 keV and peak energy of 5 keV. The X‐ray pulses continued for 4 × 10^?3 s. Copyright © 2014 John Wiley & Sons, Ltd.     

Ferromagnetism in noncompensated (Mn,Ga)-codoped ZnO films

Mn/Ga noncompensated codoped ZnO films were prepared on c-cut sapphire substrates via pulsed laser deposition. The structural, magnetic, transport, and optical properties of the films were then investigated. Addition of the Ga donor increases the electron concentration and enhances the magnetization in these films because of the net negative charge of the special noncompensated codoping, which can adjust the carrier concentration as well as the magnetic moment. Moreover, the Fermi level moves into the conduction band because of the increase in electron concentration, which results in an increase in the optical band gap value, from 3.28 eV for the undoped ZnO film to 3.61 eV for the (Mn,Ga)-codoped ZnO film.     

First-principle study of optical properties of (N,Ga) codoped ZnO

To analyze the electronic structure and optical properties of (N, Ga) codoped ZnO, the parameters such as band structure, density of states, dielectric constant, absorption and reflection spectra of pure ZnO, N–Ga and 2N–Ga codoped ZnO were calculated by using first-principle method based on DFT (Density Functional Theory). The results demonstrated that the band gap of (N, Ga) codoped ZnO narrows, and 2N–Ga codoping can obtain a high-quality and more stable p-type ZnO. Compared with pure ZnO, the real and imaginary part of dielectric function of (N, Ga) codoped ZnO move toward a lower energy side; in ultraviolet region, the absorption spectrum reduces greatly, and the blue shift of reflectivity spectrum is observed; while in infrared region, the reflectivity spectrum of 2N–Ga codoped ZnO is twice that of pure ZnO or N–Ga codoped ZnO. The results provided certain theoretical reference for the study of ZnO-based transparent conductive thin films.