Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method |
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Authors: | Xun BieJianguo Lu Yuping WangLi Gong Quanbao MaZhizhen Ye |
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Institution: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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Abstract: | Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. Taguchi method was used to find the optimal deposition parameters including oxygen partial pressure, argon partial pressure, substrate temperature, and sputtering power. By employing the analysis of variance, we found that the oxygen and argon partial pressures were the most influencing parameters on the electrical properties of ZnO:Ga films. Under the optimized deposition conditions, the ZnO:Ga films showed acceptable crystal quality, lowest electrical resistivity of 2.61 × 10−4 Ω cm, and high transmittance of 90% in the visible region. |
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Keywords: | ZnO:Ga Transparent conductive films Magnetron sputtering Taguchi method |
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