Phases of silicon at high pressure

X-ray diffraction studies are reported on silicon at pressures up to 250 kbar (25 GPa). A transition to the β-Sn structure (II) initiates at 112 ± 2 kbar and two phases (I + II) coexist to 125 ± 2 kbar. At 132 ± 2 kbar a new phase (V) initiates, and the transition is complete at 164 ± 5 kbar. This phase persists to 250 kbar. Its structure is tentatively assigned as primitive hexagonal with c/a = 0.941 ± 0.002 at 250 kbar. On release of pressure, the sequence is V → (V + II) (145 - 110 kbar) → II → (II + III) (108 - 85 kbar) → III, the last phase persisting to room pressure.     

Phase transformations in equiatomic alloy TiZr at pressure up to 70 kbar

The effect of pressure on the α ? β and ω ? β transformations in the equiatomic alloy TiZr is studied by the differential thermal analysis (DTA) and calorimetric technique. The α-β equilibrium at atmospheric pressure occurs at a temperature of 579°C, and the heat of transition ΔH is 40.9±2.0 J/g. As the pressure increases up to 28 kbar, the temperature of the α-β equilibrium linearly decreases, dT/dP=?2.2±0.3 K/kbar. In the pressure range 28–48 kbar, the β-phase undergoes a transition to the two-phase (α + ω) state upon cooling to room temperature. At pressures above the triple point with the coordinates P=49±3 kbar and T=460±30°C, the cooling of the β-phase gives rise to only the hexagonal ω-phase with the unit cell parameters a=4.843 Å, c=2.988 Å, and c/a=0.617 under normal conditions. The slope of the ω-β equilibrium boundary is positive at pressures up to 70 kbar, dT/dP≈0.46 K/kbar. The ω → α transformation at atmospheric pressure proceeds in the temperature range T=425–470°C with the enthalpy of transition ΔH=2.8 J/g.     

High pressure effect on the electrical properties of NiS2

A semiconductor-metal transition in the electrical resistance of NiS₂, which has been suggested to be a Mott transition, is observed with decreasing temperature under pressure up to 44 kbar. The transition temperature increases with pressure with a slope of $\text{dT}\text{dP}\text{= 6 ± 1 K/kbar}$. The activation energy in a semiconducting region is found to decrease with increasing pressure and to vanish at about 46 kbar. The critical pressure and temperature are predicted to be 46 ± 2 kbar and 350 ± 20 K.     

Pressure effects on the magnetic transition temperatures of NiS2

Both antiferromagnetic (T_N) and weak ferromagnetic (T_c) transition temperatures of NiS₂ have been measured under pressure up to 18.4 kbar. Values of dT_N/dP=(0.9 ± 0.1) deg/kbar and dT_c/dP=(0.4 ± 0.1) deg/kbar are obtained. The present results allow estimates of the magnetic Grüneisen constant γ_m = - d ln T_N/d ln V of (26±5) and of the entropy change of (1.4±0.5) J/mol·deg at the first order transition temperature T_c.     

Lutetium: High pressure polymorph and compression

The effect of pressure on the lattice parameters of the h.c.p. phase of Lu has been studied up to 230 kbar at 23 ± 3°C by means of X-ray diffraction employing a diamond-anvil cell. The data fitted to the Birch equation yield an isothermal bulk modulus of 460 ± 20 kbar with a pressure derivative of 2.8 ± 0.5. The axial ratio $\text{(}\text{c}\text{a}\text{)}$ decreases nonlinearly with increasing pressure, the decrease being 2.4 per cent at 230 kbar. When the pressure exceeds 230 kbar, Lu transforms reversibly from the h.c.p. phase to the Sm-type structure. The transition occurs with increasing pressure in the range of 230 ± 5 kbar. The lattice parameters of the Sm-type structure at about 231 kbar are a = 3.176 ± 0.006 Å and c = 21.77 ± 0.04 Å, and the volume change is $\text{?0.21}\text{cm}{}^3\text{mole}$ or ?1.6 per cent of the volume of the h.c.p. phase.     

The effect of pressure on the superconducting transition temperature in TaSe3

The transition temperature of TaSe₃ is found to decrease for pressures up to 10 kbar at a rate -7.5 ± 0.3×10^-5 °K/bar. This unusually large decrease can only be explained by both a pressure induced lattice stiffening and a decrease in the Fermi level density of states.     

Radiationless 3d→1s transition in muonic atoms of 238U

The probability of the radiationless muonic transition 3d→1s in ²³⁸U has been determined. This was done by comparing the singles muonic spectrum with the one gated by the 2p→1s transition. The probability was found to be (14±5)%.     

GaP at ultrahigh pressure

An x-ray diffraction experiment has been carried out on GaP compressed in a quasi-hydrostatic pressurizing medium to 296 ± 5 kbar. The transformation pressure was found to be increased from the value of 220 kbar (22 GPa) reported in a less hydrostatic environment, since two phases of GaP (I and II) were found in coexistence at 250 ± 5 kbar. No evidence of disproportionation was found at this pressure, or 296 kbar, where sharp lines of phase II were found (body centered tetragonal). No evidence of amorphization was found on release of pressure.     

Hydrostatic pressure effect on Tc of Ba0.9K0.1Pb0.75Bi0.25O3

The superconducting transition temperature of Ba_0.9K_0.1Pb_0.75Bi_0.25O₃ has been found to be suppressed smoothly by the application of hydrostatic pressure at a rate of —(2.9 ± 0.2) × 10^?5 kbar^?1 up to 15 kbar. The implications of these results are discussed.     

Optoacoustic study of laser-induced near-critical states of thin aluminum films

The results of the optoacoustic study of aluminum states within a temperature range of 3–14 kK and a pressure range of 0.1–4 kbar were considered. These high-energy states were achieved by heating a submicron metal film confined by a transparent dielectric via nanosecond laser pulses with a fluence of up to 11 J/cm². The dynamics of the temperature, pressure, and reflectivity of aluminum was studied at a nanosecond time resolution.     

Exciton condensation in intermediate valent Sm0.90La0.10S

Sm_1−xLa_xS for x more than a few percents are metals at ambient conditions. At low temperature and high pressure they develop a small gap in the order of some meV and become semiconductors or insulators. This has been interpreted as a manifestation of the excitonic insulator. In this Letter we will concentrate on Sm_0.90La_0.10S, which is the only composition showing a first order transition. Measurements of the volume change with pressure at ambient temperature show this first order volume collapse at 5 kbar with hysteresis. The resistivity is measured in function of temperature and pressure and exhibits also at 5 kbar and ambient temperature a first order phase transition to a more metallic state. At low temperatures and in function of pressure the resistivity exhibits a peak. The optical reflectivity at 300 K has been measured at low and high pressure and transforms with pressure above 5 kbar into the golden metallic phase.     

Spectroscopy at very high pressures—XXV: The IR spectrum of ferrocene at high pressures

The IR spectrum of ferrocene has been examined up to 50kbar under approximately hydrostatic conditions in a gasketed diamond anvil cell, and also under shear stress without gaskets. The results provide evidence in support of Duecker and Lippincott's claim of a phase transition at about 11.5 ± 0.5 kbar which is sluggish except under shear stress. Thermal strain and phonon self-energy contributions to the temperature-induced frequency shifts were analysed but no general pattern emerged.     

Optical absorption edge of GaS under hydrostatic pressure

The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of ?2 ± 0.5 × 10^?6eV/bar and the indirect edge of ?ll ± 1.5× 10^?6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given.     

1H NMR study of [N(CH3)4]2ZnCI4 at high pressures and low temperatures

Wide-line proton NMR studies on polycrystalline tetramethylammonium tetrachlorozincate have been carried out at high hydrostatic pressures up to 15 kbar in the temperature range 77-300 K and at ambient pressure down to 4.2 K. A second-moment transition is observed to occur starting around 161 K, the temperature for the V-VI phase transition. This transition temperature is seen to have a negative pressure coefficient up to 2 kbar, beyond which it changes sign. At 77 K the second moment decreases to 4 kbar and then increases again as a function of pressure. The results are explained in terms of the dynamics of the N(CH₃)₄ groups.     

Thermal conductivity of KCl up to 19 kbar

The pressure dependency of the thermal conductivity of KCl has been measured at room temperature up to 19kbar. The high pressure tool was of the “belt” type and a solid medium was used. The specimen was cylindrical and was heated along its axis. The conductivity was found to increase linearly at a rate of (3·3 ± 0·3) per cent/kbar.     

室温下Fe62Ni27Mn11（wt%）合金的压致fcc-hcp相变

 本文采用Mao-Bell型金刚石对顶砧（DAC）及高压在位（in situ）粉末X光衍射照相方法研究了Fe₆₂Ni₂₇Mn₁₁（wt%）合金在0~43.2 GPa压力范围内的压致结构相变和等温压缩行为，实验结果表明，该合金在低压时为fcc结构，在19.4 GPa压力附近出现压致fcc→hcp结构相变，直到43.2 GPa一直保持fcc、hcp二相共存；相变过程中，二相的molar体积相同；高压hcp相得晶格参数比值c/a基本上不随压力而变，可以表示为c/a=1.630±0.006；在卸压过程中，hcp相可保持到5.8 GPa，当卸压到常压时，该合金完全恢复到fcc结构；用Murnaghan等温固体状态方程对其压缩数据进行最小二乘法拟合，得到B₀=(166±12) GPa，B₀'=5.2±0.5；本文还给出了该合金的压致fcc→hcp结构相变模型，并对存在很宽的二相共存区间问题进行了初步探讨。     

Hydrostatic pressure dependence of the KBr U-center side bands

Hydrostatic pressure measurements on the KBr U-center Stokes side bands are reported at 40.8°K for pressures up to 5 kbar. The Grüneisen constant for the phonons near the [0.6, 0.6, 0] saddle point is calculated to be 1.93 ± 0.1 from these measurements.     

Excitonic excitation spectra in ZnS: Cl crystal under pressure

The 3363 Å peak in the excitation spectrum of the S-A luminescence in the ZnS:Mn Cl cubic crystal at R.T. is ascribed to the A exciton. Its pressure coefficient is found as 6.4±0.2 meV/kbar, close to ρ = 6.3±0.2 meV/kbar reported for the gap in ZnS cubic crystal from the reflectivity measurements. This peak decreases by cooling and has not been observed at 85 K. The uv-excitation of the Mn-luminescence at R.T. is due to the energy transfer from the S-A to the Mn²⁺ centers, whereas the excitation peak at the exciton energy at 85 K comes from the excitation of the Mn²⁺ centers by the recombination energy of the Mn²⁺ bound excitons.     

流体静压力下快离子导体Rb4Cu16I7Cl13离子电导的研究

在流体静压力为0.5—11.6kbar,温度-80—80℃范围内,测量了Rb₄Cu₁₆I₇Cl₁₃多晶粉末“松散”样品和“致密”样品的离子电导。“松散”样品电导与压力的关系表明,在4.0—5.0kbar附近,电导存在极大值;“致密”样品电导随压力单调下降。在一定压力下,“致密”样品电导率随温度变化的趋势与常压结果相同,压力对Rb₄Cu₁₆I₇Cl_关键词：     

Effect of hydrostatic pressure on the phase transition of ferroelectric PbTiO3

The effect of hydrostatic pressure on the dielectric constant of the Nb-doped lead titanate ceramics was measured up to 60 kbar at room temperature. From the previously observed pressure dependence of lattice parameters and the present results, it is concluded that the tetragonality decreases linearly with a slope of ?7.6×10^?4/kbar and that the pressure dependence of the tetragonal-cubic transition temperature is ?8.4K/kbar.