Highly sensitive hydrogen detection by medium energy Ne+ impact

Hydrogen atoms on solid surfaces were measured directly by elastic recoil detection analysis (ERDA) using medium energy (100–150 keV) Ne⁺ ions with an excellent sensitivity of (～ 1 × 10¹² H/cm²) without any absorber foils and time-of-flight techniques. An electrostatic toroidal analyzer acquired H⁺ ions with energy around 11 keV recoiled from Si(111)-1 × 1-H surfaces. The H⁺ fraction strongly depends upon emerging angle and takes a value more than 50% at the angle below 70° and a saturated value of 17% at the angle above 80° with respect to surface normal. We detected H atoms on the reduced TiO₂(110) exposed to water molecules at room temperature (2 L) and estimated the absolute amount of H to be ～ 2.0 × 10¹⁴ H/cm² corresponding to ～ 38% (～ 0.38 ML) of the bridging oxygen atoms.     

Compositional and structural medium energy ion scattering study of the temperature mediated diffusion determination at the Co/V interface in Co/V/MgO(100)

The impact of annealing at 300 °C on the elemental composition and the atomic structure of the Co/V interface in the 2.5 Å Co/70 Å V/MgO (100) system has been investigated by medium energy ion scattering (MEIS) using 100 keV He⁺ ions. By combining the experimental MEIS results with simulations we show that, while the Co/V interface is abrupt for the system kept at room temperature, annealing at 300 °C induces a strong interdiffusion leading to a Co_0.5V_0.5 surface bcc alloy with a high degree of disorder. Additionally, the MEIS data suggest that the surface of the annealed system is slightly rumpled by ~ 0.2 Å.     

Ultrathin Y2O3(111) films on Pt(111) substrates

The growth of ultrathin films of Y₂O₃(111) on Pt(111) has been studied using scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and low energy electron diffraction (LEED). The films were grown by physical vapor deposition of yttrium in a 10^? 6 Torr oxygen atmosphere. Continuous Y₂O₃(111) films were obtained by post-growth annealing at 700 °C. LEED and STM indicate an ordered film with a bulk-truncated Y₂O₃(111)–1 × 1 structure exposed. Furthermore, despite the lattices of the substrate and the oxide film being incommensurate, the two lattices exhibit a strict in-plane orientation relationship with the [11?0] directions of the two cubic lattices aligning parallel to each other. XPS measurements suggest hydroxyls to be easily formed at the Y₂O₃ surface at room temperature even under ultra high vacuum conditions. The hydrogen desorbs from the yttria surface above ~ 200 °C.     

Type B epitaxy of Ge on CaF2(111) surface

It was known experimentally that type B orientation, which is rotated 180° about the [111] axis, dominated the heteroepitaxial growth of Ge(111) on a CaF₂(111) substrate at an elevated temperature. We performed first principles calculations using density functional theory to determine the energetics of the Ge(111)/CaF₂(111) interface and found that the type B orientation of the Ge film is most likely a result of a direct bonding between Ge atoms and Ca²⁺ at the CaF₂ surface with the top F^? layer depleted. Our theoretical prediction is supported by our X-ray diffraction experiments on {111} < 121> biaxially textured Ge/CaF₂ samples.     

Sputter damage in Si surface by low energy Ar+ ion bombardment

The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar⁺ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar⁺ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively.     

Adsorption of O2 and CO2 on the Si(111)-7 × 7 surfaces

The interaction of O₂ and CO₂ with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O₂ and CO₂ molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO₂ has a lower O/Si ratio than that of O₂.     

Structural characterization of Pb nanoislands in SiO2/Si interface synthesized by ion implantation through MEIS analysis

Medium energy ion scattering (MEIS) measurements and transmission electron microscopy (TEM) observations are applied to characterize a buried Pb nanoparticle (NP) system synthesized by ion implantation. The NPs are located at the SiO₂/Si film interface, forming a dense two-dimensional array. Full 2D (energy and angle) experimental MEIS spectra are compared with Monte Carlo simulated ones. The results demonstrate that MEIS measurements provide microstructural information (mean NP volume of about 150 nm³ and areal density of about 4 × 10¹¹ NP/cm²), but no accurate information on the NP geometrical shape.     

Chalcogen based treatment of InAs with [(NH4)2S/(NH4)2SO4]

A sulphur based chemical, ([(NH₄)₂S/(NH₄)₂SO₄]) to which S has been added not previously reported for the treatment of (111)A InAs surfaces is introduced and benchmarked against the commonly used passivants Na₂S·9H₂O and ((NH₄)₂S + S), using Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxide layer present on the InAs surface is more effectively removed when treated with ([(NH₄)₂S/(NH₄)₂SO₄] + S) than with ((NH₄)₂S + S) or Na₂S·9H₂O. AES depth profiles of the sulphurized layers revealed the formation of a thin (less than 8.5 nm) In–S surface layer for both ((NH₄)₂SO₄ + S) and ([(NH₄)₂S/(NH₄)₂SO₄] + S) treatments. No evidence for the formation of As―S bonds was found. Treatment with ([(NH₄)₂S/(NH₄)₂SO₄] + S) also affected a significant improvement compared to the more established sulphur treatments in the surface morphology of the otherwise poor as-received n-InAs (111)A surface.     

Proton transfer in water–hydroxyl mixed overlayers on Pt(1 1 1): Combined approach of laser desorption and spatially-resolved X-ray photoelectron spectroscopy

Proton transfer in water–hydroxyl mixed overlayers on a Pt(1 1 1) surface was studied by a combination of laser induced thermal desorption (LITD) method and spatially-resolved X-ray photoelectron spectroscopy (micro-XPS). The modulated pattern OH + H₂O/H₂O/OH + H₂O was initially prepared by the LITD method; vacant area with a 400 μm width was first formed in the mixed OH + H₂O overlayer by irradiation of focused laser pulses, and followed by refilling the vacant area with pure H₂O. Spatial distribution changes of OH and H₂O were measured as a function of time with the micro-XPS technique, which indicated that H₂O molecules in the central region flow into the OH + H₂O region. From quantitative analyses using a diffusion equation, we found that the proton transfer in the mixed overlayer consists of at least two pathways: direct proton transfer from H₂O to OH in the nearest site and the proton transfer to the next-nearest site via H₃O⁺ formation. The time scale of first and second path was estimated to be 5.2 ± 0.9 ns and 48 ± 12 ns at 140 K, respectively. In the presence of water capping layer, however, the rate of proton transfer is reduced by an order of magnitude, which would be explained by peripatetic behavior of proton into H₂O capping layer.     

CO and H2O adsorption and reaction on Au(310)

We have studied desorption of ¹³CO and H₂O and desorption and reaction of coadsorbed, ¹³CO and H₂O on Au(310). From the clean surface, CO desorbs mainly in, two peaks centered near 140 and 200 K. A complete analysis of desorption spectra, yields average binding energies of 21 ± 2 and 37 ± 4 kJ/mol, respectively. Additional desorption states are observed near 95 K and 110 K. Post-adsorption of H₂O displaces part of CO pre-adsorbed at step sites, but does not lead to CO oxidation or significant shifts in binding energies. However, in combination with electron irradiation, ¹³CO₂ is formed during H₂O desorption. Results suggest that electron-induced decomposition products of H₂O are sheltered by hydration from direct reaction with CO.     

Medium energy ion scattering investigation of methylthiolate-induced modification of the Au(111) surface

100 keV H⁺ scattering has been used to investigate the structure of the methylthiolate/Au(111) interface in the Au(111)(√3 × √3)R30° phase. Adsorption of the thiolate onto the clean Au(111) surface leads to a large drop in the scattered ion yield due to the lifting of the clean surface ‘herring-bone’ reconstruction, but the thiolate-covered surface shows an ion yield higher than that of an unreconstructed Au(111) surface, providing direct evidence of a significant number of Au atoms that are displaced from their bulk-terminated positions at the buried interface. Simulations for two different Au adatoms models at the interface, namely, the Au-adatom-monothiolate (AAM) and Au-adatom-dithiolate (AAD) models, show significant sensitivity to the exact values of interlayer spacings and atomic vibrational amplitudes, but the comparison with experimental results appears to favour the AAD model with 0.17 ML Au adatoms in bridging sites at the interface.     

Effect of Ag addition on the third-order nonlinearity and physicochemical property of chalcohalide glass

In this work, the 70GeS₂–20In₂S₃–10CsI glass introduced with 0–10 mol% Ag₂S were prepared by the vacuumed melt-quenching technique. The physicochemical properties, such as glass transition temperature, density, refractive index, transmittance, hardness as well as third-order nonlinearity are investigated with the increasing Ag₂S contents. It was found that the refractive index (@632.8 nm), density, and hardness of glasses increase distinctly from 2.204 to 2.270, from 3.520 to 3.675 g cm⁻³ and from 180.9 to 227.9 kg mm⁻², respectively. Meanwhile, the nonlinear refractive index increases from 3.2 × 10⁻¹⁸ to 4.6 × 10⁻¹⁸ m²/W due to the increased refractive index. Finally, the Raman spectra are performed to structurally illustrate the role of Ag addition on the changes of the physicochemical properties. With the Ag₂S contents increasing, the vibration intensity of the [InS₄] and [InS₃I] tetrahedrons increases and the heavy Ag atoms result in the increased density and refractive index, as well as the nonlinear refractive index. The Ag-containing glass, which exhibited good thermal stability, excellent infrared transparency and ultrafast nonlinear optical properties, can be find applications for the IR window material or ultrafast infrared optics.     

Magnetic properties of nanocrystalline Fe86.7Zr3.3B4Ag6 thin film

The changes of magnetic properties with annealing temperature were studied in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film. The thin films were deposited by a DC magnetron sputtering method, annealed at 300–700°C for 1 h in vacuum under a field of 1.5 kOe parallel to the film plane, and then furnace-cooled. As a result, it has been found that the Ag addition to Fe–Zr–B amorphous thin films resulted in the decrease of crystallization temperature to 400°C due to promoted crystallization ability. Also, it gave rise to formation of fine BCC α-Fe crystalline precipitates with a grain size smaller than 10 nm in the amorphous matrix near 400°C, and led to prominent enhancement in the magnetic properties of the Fe_86.7Zr_3.3B₄Ag₆ thin films. Significantly, excellent magnetic properties such as a saturation magnetization of 1.7 T, a coercive force of 1 Oe and a permeability of 7800 at 50 MHz were obtained in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film containing 7.2 nm-size BCC α-Fe, which was annealed at 400°C. Also, core loss of 1.4 W cm⁻³ (B_m=0.1 T) at 1 MHz in the thin film was obtained, and it is a much lower value than had been obtained in any existing soft magnetic materials. Such excellent properties are inferred to originate from the uniform dispersion of nano-size BCC α-Fe in the amorphous matrix.     

On the rate constants of OH + HO2 and HO2 + HO2: A comprehensive study of H2O2 thermal decomposition using multi-species laser absorption

Hydrogen peroxide (H₂O₂) and hydroperoxy (HO₂) reactions present in the H₂O₂ thermal decomposition system are important in combustion kinetics. H₂O₂ thermal decomposition has been studied behind reflected shock waves using H₂O and OH diagnostics in previous studies (Hong et al. (2009) [9] and Hong et al. (2010) [6,8]) to determine the rate constants of two major reactions: H₂O₂ + M → 2OH + M (k₁) and OH + H₂O₂ → H₂O + HO₂ (k₂). With the addition of a third diagnostic for HO₂ at 227 nm, the H₂O₂ thermal decomposition system can be comprehensively characterized for the first time. Specifically, the rate constants of two remaining major reactions in the system, OH + HO₂ → H₂O + O₂ (k₃) and HO₂ + HO₂ → H₂O₂ + O₂ (k₄) can be determined with high-fidelity.No strong temperature dependency was found between 1072 and 1283 K for the rate constant of OH + HO₂ → H₂O + O₂, which can be expressed by the combination of two Arrhenius forms: k₃ = 7.0 × 10¹² exp(550/T) + 4.5 × 10¹⁴ exp(?5500/T) [cm³ mol^?1 s^?1]. The rate constants of reaction HO₂ + HO₂ → H₂O₂ + O₂ determined agree very well with those reported by Kappel et al. (2002) [5]; the recommendation therefore remains unchanged: k₄ = 1.0 × 10¹⁴ exp(?5556/T) + 1.9 × 10¹¹⁺exp(709/T) [cm³ mol^?1 s^?1]. All the tests were performed near 1.7 atm.     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Photolysis of SF6 adsorbed on Si(111)-7 × 7 by monochromatic soft X-ray

Continuous-time photoelectron spectroscopy (PES) and photon-exposure-dependent photon-stimulated desorption (PSD) were employed to investigate the monochromatic soft X-ray-induced dissociation of SF₆ molecules adsorbed on Si(111)-7 × 7 at 30 K (SF₆ dose = 3.4 × 10¹³ molecules/cm², ～ 0.5 monolayer). The photon-induced evolution of adsorbed SF₆ was monitored at photon energies of 98 and 120 eV [near the Si(2p) edge], and sequential valence-level PES spectra made it possible to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are ～ 2.7 × 10^? 17 and ～ 3.7 × 10^?17 cm², respectively. The changes in the F^? and F⁺ PSD ion yields were also measured during irradiation of 120 eV photons. The photon-exposure dependencies of the F^? and F⁺ ion yields show the characteristics: (a) the dissociation of adsorbed SF₆ molecules is ascribable to the substrate-mediated dissociations [dissociative attachment (DA) and dipolar dissociation (DD) induced by the photoelectrons emitting from the silicon substrate]; (b) at early stages of photolysis, the F^? yield is mainly due to DA and DD of the adsorbed SF₆ molecules, while at high photon exposure the F^? formation by electron capture of the F⁺ ion is likely to be the dominant mechanism; (c) the F⁺ ion desorption is associated with the bond breaking of the surface SiF species; (d) the surface SiF is formed by reaction of the surface Si atom with the fluorine atom or F^? ion produced by scission of S–F bond of SF_n (n = 1–6) species.     

Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique

This study examined the effects of Ga content in the CIGS absorber layer on the properties of the corresponding thin films and solar cells fabricated using a co-evaporation technique. The grain size of CIGS films decreased with increasing Ga content presumably because Ga diffusion during the 2nd stage of the co-evaporation process is more difficult than In diffusion. The main XRD peaks showed a noticeable shift to higher diffraction angles with increasing Ga content, which was attributed to Ga atoms substituting for In atoms in the chalcopyrite structure. Band gap energy and the net carrier concentration of CIGS films increased with Ga/(In + Ga) ratios. Regarding the solar cell parameters, the short circuit current density (J_SC) decreased linearly with Ga/(In + Ga) ratios due to the lack of absorption in the long-wavelength portion of the spectrum, while the open circuit voltage (V_OC) increase with those. However, V_OC values at high Ga/(In + Ga) regions (>0.35) was far below than those extrapolated from the low Ga contents regions, finally resulting in an optimum Ga/(In + Ga) ratio of 0.28 where the solar cell showed the highest efficiency of 15.56% with V_OC, J_SC and FF of 0.625 V, 35.03 mA cm⁻² and 0.71, respectively.     

Growth,structure, and thermal stability of epitaxial BaTiO3 films on Pt(111)

The growth of epitaxial ultrathin BaTiO₃ films upon rf magnetron sputter deposition on a Pt(111) substrate has been studied by scanning tunnelling microscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. The BaTiO₃ films have been characterized from the initial stages of growth up to a film thickness of 4 unit cells. The deposited films develop a long-range order upon annealing at 1050 K in UHV. In the submonolayer regime a wetting layer is formed on Pt(111). Thicker films reveal a Stranski–Krastanov-like structure as observed with STM. By XPS a good agreement of the thin film stoichiometry with BaTiO₃ single crystal data is determined. Due to annealing at 1150 K BaTiO₃ forms large two-dimensional islands on the Pt(111) substrate. Different surface structures develop on the islands depending on the O₂ partial pressure during annealing.     

N2 emission-channel change in NO reduction over stepped Pd(211) by angle-resolved desorption

A sharp change in the N₂ emission channel from N₂O(a) → N₂(g) + O(a) to N(a) + N(a) → N₂(g) has been found at around 500 K in a steady-state NO + D₂ reaction over stepped Pd(211) = [(S)3(111) × (100)] by means of angle-resolved desorption. The desorbing N₂ is highly collimated at around 30° off normal toward the step-down direction below about 500 K due to the intermediate N₂O decomposition, whereas, above 500 K, the near normally directed desorption due to the recombination of N(a) is relatively enhanced. The N₂O decomposition channel is promoted when the reaction is carried out with hydrogen (deuterium) and the channel change is accelerated by quick changes of the amounts of surface hydrogen and oxygen (or NO(a)) into the opposite directions, and enhanced nitrogen removal as ammonia on the resultant hydrogen-rich surface. In the steady-state NO + CO reaction, the N₂ emission channel gradually changes above 500 K toward recombination. A model for the off-normal N₂ emission is briefly described.