The role of vacancy,impurity,impurity-vacancy complex in the kinetics of LiNH2 complex hydrides:a first-principles study

This paper studies first-principles plane-wave pseudopotential based on density functional theory of hydrogen vacancy,metal impurity,impurity-vacancy complex in LiNH 2,a promising material for hydrogen storage.It finds easy formation of H vacancy in the form of impurity-vacancy complex,and the rate-limiting step to the H diffusion.Based on the analysis of the density of states,it finds that the improvement of the dehydrogenating kinetics of LiNH 2 by Ti catalysts and Mg substitution is due to the weak bonding of N-H and the new system metal-like,which makes H atom diffuse easily.The mulliken overlap population analysis shows that H vacancy leads to the H local diffusion,whereas impurity-vacancy complexes result from H nonlocal diffusion,which plays a dominant role in the process of dehydrogenation reaction of LiNH 2.     

Orbital selection of the double [CuO2] layer compound Ca3Cu2O4Cl2

We present a first-principles investigation on the dynamics and mechanism of the oxidation reaction between water molecules and the reduced PuO_2(110) surface using ab initio molecular dynamics(AIMD) simulations in combination with density functional theory(DFT) + U calculations. We find a dominating dissociation preference of water molecules for the vacancy defect sites on the PuO_2(110) surface, irrespective of the water or vacancy coverage. Due to hybridizations between the frontier orbitals of water molecule and the electronic states of the vacancy vicinity, partial water dissociation at the vacancy sites is exothermic and barrierless. The dissociation product, an OH group, further hydrogenates the PuO_2(110) surface by occupying the vacancy site.We also observe surface vacancy diffusion induced by the interactions between the water molecules and the surface oxygen atom in the proximity of the defect sites.     

重氧空位对金红石型和锐钛矿型TiO2导电性能影响的模拟计算

基于密度泛函理论框架下的第一性原理平面波超软赝势方法,构建了未掺杂与相同重氧空位金红石型和锐钛矿型TiO_1.9375超胞模型,分别对模型进行了几何结构优化、能带结构分布和态密度分布的计算. 结果表明,氧空位后金红石型和锐钛矿型TiO₂体系体积均变大,同时,锐钛矿型TiO_1.9375超胞的稳定性、迁移率以及电导率均高于金红石型TiO_1.9375超胞. 计算结果和实验结果相一致. 关键词： 重氧空位 2')" href="#">金红石型和锐钛矿型TiO₂ 导电性能 第一性原理     

On the correlation of crystal defects and band gap properties of ZnO nanobelts

The energetics and dynamics of electromigration of the oxygen vacancy is investigated with first-principles calculations and kinetic Monte Carlo methods. To simulate the charged oxygen vacancy under external fields within the first-principles approach, we introduce a slab model with electron-accepting dopants in the surface. The analysis of the density of states confirms that the oxygen vacancies are positively charged. When the external field is applied, the total energy of the slab linearly changes with respect to the position of the charged vacancy in the field direction, which allows for probing local permittivity around the vacancy site. The activation energy of vacancy migration is lowered along the field direction in a manner that the charge state of the vacancy is maintained along the migration path. Kinetic Monte Carlo simulations based on the first-principles inputs are also carried out and it is shown that the high-temperature condition is important for the fast redistribution of charged vacancies.     

金红石型TiO2点缺陷性质的第一性原理研究

本文运用基于局域密度泛函和赝势的第一性原理方法研究了金红石相TiO2点缺陷的电子性质,结果表明氧空位缺陷使晶体的费米能量升高,在能隙中没有产生杂质能级.钛空位缺陷使晶体的费米能量降低,并在价带顶部产生了一个杂质能级,与价带顶能量相差约0.4 eV.本文还计算了金红石相TiO2在具有氧空位和钛空位点缺陷情况下的键长变化、态密度和电荷布居状况.     

Vacancy defects in delafossite СuАlO<Subscript>2</Subscript>: First-principles calculations

Electronic properties and formation energies of vacancy defects in delafossite CuAlO₂ have been investigated by using the first-principles density functional theory. The band structures and density of states of various vacancy defects have been obtained and analyzed. The results show that the V _Cu systems with different charge states influence the type of conductivity. The introduced vacancy defects enhance the hybridization between O-2p and Cu-3d states, which is good for p-type conductivity. The calculated formation energies indicate that the Cu vacancy is relatively easy to form and it trends to have positive charge.     

Defect studies in small CdTe clusters

We study Cd vacancy formation in prototype stoichiometric and non-stoichiometric CdTe clusters with and without passivation. For certain clusters like Cd₁₃Te₁₆, vacancy leads to severe distortion of the geometry due to propagation of defect. Annealing of the vacancy out of the cluster is observed in all unpassivated clusters. Passivated clusters retain their initial geometry and vacancy induced structural distortions are not seen in these clusters since the defect gets localized. Vacancy also induces intragap states. However, it was observed that the passivation of the dangling bonds created by the vacancy removes the intragap states. In an attempt to have CdTe clusters with extrinsic carriers, we substituted a Cd atom by its adjacent atoms Pd/Ag/In/Sn in these CdTe clusters. Substitutional doping of Cd by metal atoms increases the stability of unpassivated clusters. For certain clusters, metal atom doping leads to a half-metallic character. Pd/Ag-doped clusters are p-type semiconductors whereas In-doped clusters are n-type semiconductors. Sn doping in these clusters does not result in n-type semiconductors.     

Effects of disorder on tunnel magnetoresistance in Fe/MgO/Fe junctions

Effects of lattice distortion and oxygen vacancy on tunnel magnetoresistance in Fe/MgO/Fe junctions are theoretically investigated. By treating the distortion in MgO as the random potential and performing numerical simulations based on the Kubo–Landauer formula, it is shown that the magnetoresistance ratio decreases with increasing randomness. Moreover, first-principles calculations within the density functional theory show that the defect states in the Fe/MgO cluster containing an oxygen vacancy induce no significant shift in the Fermi level.     

The effect of defects on the hydrogenation in Mg (0 0 0 1) surface

Density-functional theory was presented to investigate the hydrogen dissociation on a pure, Pt-doped, vacancy and oxide Mg(0 0 0 1) surface. Our results show that the energy barriers are 1.05, 0.39, 0.93 and 1.33 eV for H₂ dissociation on the pure, Pt-doped, vacancy and oxide Mg surface, respectively. The calculation results imply that the initial dissociation of H₂ is enhanced significantly for the Pt-doped Mg(0 0 0 1) surface, negligible for the vacancy model and weekend for the oxide model. The density of state results shows that, following the dissociation reaction coordinate, the H–H interactions are weeker for the Pt-doped model while interactions become stronger for the oxide model. It is suggested that the dissociation process is facilitated when Pt atom acts as catalyst and oxide overlayers delay hydrogen adsorption on the Mg layer. The present study will help us understand the defect role being played for the improvement or opposition effect in absorption kinetics of H₂ on the Mg(0 0 0 1) surface.     

Theoretical prediction of ion conductivity in solid state HfO2

A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria- stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH’s is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2 , the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.     

Adsorption and dissociation of molecular hydrogen on Pt/CeO2 catalyst in the hydrogen spillover process: A quantum chemical molecular dynamics study

Ultra accelerated quantum chemical molecular dynamics method (UA-QCMD) was used to study the dynamics of the hydrogen spillover process on Pt/CeO₂ catalyst surface for the first time. The direct observation of dissociative adsorption of hydrogen on Pt/CeO₂ catalyst surface as well as the diffusion of dissociative hydrogen from the Pt/CeO₂ catalyst surface was simulated. The diffusion of the hydrogen atom in the gas phase explains the high reactivity observed in the hydrogen spillover process. Chemical changes, change of adsorption states and structural changes were investigated. It was observed that parallel adsorption of hydrogen facilitates the dissociative adsorption leading to hydrogen desorption. Impact with perpendicular adsorption of hydrogen causes the molecular adsorption on the surface, which decelerates the hydrogen spillover. The present study also indicates that the CeO₂ support has strong interaction with Pt catalyst, which may cause an increase in Pt activity as well as enhancement of the metal catalyst dispersions and hence increasing the rate of hydrogen spillover reaction.     

Electronic structures and optical properties of rutile TiO2 with different point defects from DFT + U calculations

The electronic states and formation energies of four types of lattice point defects in rutile TiO₂ are studied using the first-principles calculations. The existence of oxygen vacancy leads to a deep donor defect level in the forbidden band, while the Ti interstitial forms two local states. It is predicted that oxygen vacancy prefers to combine with Ti-interstitial to form V_O–Ti_i dimer by a partial 3d electron transfer from the Ti_i to its neighboring V_O. The charge distribution between a Ti interstitial and its neighboring Ti ions partially shields the Coulomb interactions. Lastly, optical properties of these defective lattices are discussed.     

二维缺陷GaAs电子结构和光学性质第一性原理研究

采用基于密度泛函理论的第一性原理方法计算了存在Ga空位缺陷和掺杂B原子的二维GaAs的能带结构、态密度和光学性质.计算结果表明空位缺陷二维GaAs显示出金属特性,B原子的引入使体系变为间接带隙半导体,禁带宽度为0.35 eV.态密度计算发现体系低能带主要由Ga的s态、p态、d态和As的s态、p态构成;高能带主要由Ga和As的s态、p态构成.掺杂B原子与存在空位缺陷的二维GaAs相比,静态介电常数相对较低,变为8.42,且易于吸收紫外光,在3.90～8.63 eV能量范围具有金属反射特性,反射率达到52%.     

金属原子修饰石墨烯体系催化性能的理论研究

采用基于密度泛函理论的第一性原理方法研究了单个CO和O2气体分子在金属原子修饰石墨烯表面的吸附和反应过程.结果表明:空位缺陷结构的石墨烯能够提高金属原子的稳定性,金属原子掺杂的石墨烯体系能够调控气体分子的吸附特性.通入混合的CO和O2作为反应气体,石墨烯表面容易被吸附性更强的O2分子占据,进而防止催化剂的CO中毒.此外,对比分析两种催化机理(Langmuir-Hinshelwood和Eley-Rideal)对CO氧化反应的影响.与其它金属原子相比,Al原子掺杂的石墨烯体系具有极低的反应势垒(0.4 e V),更有助于CO氧化反应的迅速进行.     

Kinetic Phase Transition in A2 ＋ 2B2 → 2B2A Reaction System with Particle Diffusion

A lattice gas model is presented for the A2 ＋2B2 → 2B2A reaction system with particle diffusion in two dimensions. In the model, B2 dissociates in the random dimer-filling mechanism and A2 dissociates in the end-on dimer filling mechanism. A reactive window appears and the system exhibits a continuous phase transition from a reactive state to a ＂B ＋ vacancy＂ covered state with infinitely many absorbing states. When the diffusion of particle B is considered, there are only two absorbing states. It is found that the critical behavior of the continuous phase transition changes from the directed percolation （DP） class to the pair contact process with diffusion （PCPD） class.     

金属原子修饰石墨烯体系催化性能的理论研究

采用基于密度泛函理论的第一性原理方法研究了单个CO 和O2气体分子在金属原子修饰石墨烯表面的吸附和反应过程. 结果表明: 空位缺陷结构的石墨烯能够提高金属原子的稳定性, 金属原子掺杂的石墨烯体系能够调控气体分子的吸附特性. 通入混合的CO和O2作为反应气体, 石墨烯表面容易被吸附性更强的O2分子占据, 进而防止催化剂的CO 中毒. 此外, 对比分析两种催化机理(Langmuir-Hinshelwood和Eley-Rideal)对CO氧化反应的影响. 与其它金属原子相比, Al原子掺杂的石墨烯体系具有极低的反应势垒(< 0.4 eV), 更有助于CO氧化反应的迅速进行.     

Physicochemical Processes in Heavy-Metal Azides and the Dislocation Structure

The present paper gives new experimental results that allow slow decomposition of metal azides of different types (including radiolysis, photolysis, electrolysis, and thermolysis) to be analyzed in the context of the common reaction pathway. Filamentary crystals of silver and lead azides are investigated. It is demonstrated experimentally that the reaction goes on the vacancy cluster formed by an edge dislocation in the near-surface region of the crystal. The reaction produces nonequilibrium electrons and holes considered as reactants. In the bulk of the crystal, the reaction in the anionic sublattice forms an intermediate product, hypothetically, N₆. Methods of controlling the defect crystal structure of metal azides are suggested. They allow the reactivity of metal azides to be preset.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.     

Vacancies in a Si(111) thin film

We investigated the electronic structure of an ideal vacancy in the Si(111) thin film by using empirical tight binding method. The supercell model used in our calculations predicted vacancy related states in general agreement with previous works. For the vacancy near the surface, it is found that the bound state energies shift to higher energies as the vacancy moves toward the surface. At the surface, however, it was seen that the vacancy bound state mix with the dangling bond surface states. Considering energy locations in the bond gap, we propose that vacancies created in the surfaceregion may account for the peak (at about ～0.5 eV above the valence band edge) in the density of interface states observed at the interface of the Si-SiO₂ junction.     

分子空位缺陷对环三亚甲基三硝胺含能材料几何结构、电子结构及振动特性的影响

含能材料中的微观缺陷是导致“热点”形成并相继引发爆轰的重要因素. 然而, 由于目前人们对材料内部微观缺陷的认识不足, 限制了对含能材料中“热点”形成微观机理的理解, 进而阻碍了含能材料的发展和应用. 为了洞悉含能材料内部微观缺陷特性及探索缺陷引发“热点”的形成机理, 利用第一性原理方法研究了分子空位缺陷对环三亚甲基三硝胺(RDX) 含能材料的几何结构、电子结构及振动特性的影响, 探讨了微观缺陷对初始“热点”形成的基本机理. 采用周期性模型分析了分子空位缺陷对RDX几何结构、电子能带结构、电子态密度及前线分子轨道的影响. 采用团簇模型分析了分子空位缺陷对RDX振动特性的影响. 结果发现, 分子空位缺陷的存在使其附近的N–N键变长, 分子结构变得松弛; 使导带中很多简并的能级发生分离, 电子态密度减小, 并使由N-2p和O-2p轨道形成的导带底和价带顶均向费米面方向移动, 降低了能带隙值, 增加了体系活性. 前线分子轨道及红外振动光谱的计算分析表明, 分子缺陷使最高已占分子轨道电荷主要集中在缺陷附近的分子上, 且分子中C–H键和N–N键能减弱. 这些特性表明, 分子空位缺陷的存在使体系能带隙变小, 并使缺陷附近的分子结构松弛, 电荷分布增多, 反应活性增强; 在外界能量激发下, 缺陷附近分子将变得不稳定, 分子中的C–H键或N–N键较易先发生断裂, 发生化学反应释放能量, 进而成为形成“热点”的根源.