Influence of the thickness on structural,magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

We have studied the effect of thickness on the structural, magnetic and electrical properties of La_0.7Ca_0.3MnO₃ thin films prepared by pulsed laser deposition method using X-ray diffraction, electrical transport, magneto-transport and dc magnetization. X-ray diffraction pattern reflects that all films have c-axis epitaxial growth on LaAlO₃ substrate. The decrease in out-of-plane cell parameter specifies a progressive relaxation of in the plane compressive strain as the film thickness is increases. From the dc magnetization measurements, it is observed that ferromagnetic to paramagnetic transition temperature increases with increase in the film thickness. Magneto-resistance and temperature coefficient of resistance increases with film thickness and have maximum value near its metal to insulator transition temperature.     

An investigation of phase separation by magnetic force microscopy in La0.45Sr0.55MnO3-δ(δ≈0.01)

We have found phase separation in La_0.45Sr_0.55MnO_3-δ (LSMO) by means of electron spin resonance, magnetic force microscopy (MFM) and magnetic measurements. Ferromagnetic and antiferromagnetic phases can coexist at low temperatures, and ferromagnetic and paramagnetic phases coexist when the temperature lies between the Néel and Curie temperatures. The size and shape of the ferromagnetic phases (the minority phases) was first observed directly from MFM images. It is suggested that the phase separation in LSMO is not the charge segregation type, but an electroneutral type due perhaps to the nonuniform distribution of oxygen vacancies.     

Infrared spectroscopic studies of GdBaCo2O5.5

This paper reports infrared spectroscopic studies on GdBaCo₂O_5.5 layered perovskite which exhibits successive magnetic transitions from paramagnetic to ferromagnetic to antiferromagnetic states as well as high-temperature metal to insulator transition and a change in charge transport mechanism at low temperature. Infrared absorption spectra recorded at various temperatures in the range 80–350 K reveal changes in the positions of Co–O stretching and bending frequencies which provide an explanation to the magnetic and transport behaviour of this compound.     

A sonochemical-assisted synthesis and annealing temperature effect of La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> nanoparticles

This paper reports on the sonochemical-assisted synthesis of La_0.7Sr_0.3MnO₃ (LSMO) nanoparticles (NPs) which have a single-crystalline perovskite structure. The average particle size of LSMO NPs was controlled from about 40 to 120 nm by changing the annealing temperatures from 750 to 1050°C. The particle size, electrical resistivity, and ferromagnetic transition temperature of LSMO NPs were strongly dependent on the annealing temperature. A substantial decrease in resistivity and an enhancement in the insulator–metal transition temperature were found on increasing the annealing temperature. Furthermore, the enhancement in magnetization and paramagnetic–ferromagnetic (PM–FM) transition temperatures was observed as the annealing temperature increases.     

Preparation and characterization of La0.8Sr0.2MnO3 thin films by an excimer laser MOD process for a bolometer

La_0.8Sr_0.2MnO₃ (LSMO) films were prepared on LaAlO₃ substrates by excimer laser metal organic deposition (ELMOD) at 500 °C. The temperature dependence of resistance of the LSMO films was investigated by changing the laser fluence, irradiation time, and film thickness. It was found that the resistance of the LSMO films 80 nm in thickness that were irradiated by an ArF laser at a fluence of 100 mJ/cm² for 60 min showed a metallic temperature dependence, and the maximum temperature coefficient of resistance of the films (defined as 1/R×dR/dT) was 3.4% at 265 K. PACS 81.15.-z; 81.15.Fg; 81.15.Np; 73.61.-r; 71.30.+h     

Metal-insulator and magnetic phase transitions: A thermodynamic model

A thermodynamic model of magnetic insulator-to-metal transitions is presented. As the parameters are varied it shows with increasing temperatures; (a) antiferromagnetic insulator → paramagnetic insulator; or (b) antiferromagnetic insulator → metal → paramagnetic insulator; or (c) antiferromagnetic insulator → metal; or (d) metal at all temperatures. Behaviors (b) and (c) are separated by a classical critical point. The model reproduces well the behavior encounted in (V_1-xCr_x)₂O₃ and can be applied to magnetic semiconductors in general.     

Novel aspects of charge and lattice dynamics in the hole-doped manganite La0.67Sr0.33MnO3

Previous infrared studies on the hole-doped manganite La_0.67Sr_0.33MnO₃ (LSMO) have analysed its charge dynamics in terms of one type of charge carrier despite evidence of both electron and hole Fermi surfaces. Here, we investigate the charge dynamics of an LSMO film with infrared and optical spectroscopy in order to provide a complete picture of metallic conduction. In the ferromagnetic metallic phase, the low-frequency optical conductivity is best explained by a two-carrier model comprising electrons and holes. The number densities, effective masses and relaxation response of the delocalized electrons and holes are quantified. We discover that only one-third of the doped charges are coherent and contribute to the dc transport. Metallic LSMO cannot be classified as a bad metal at low temperatures because the mean free path of the coherent, mobile charge carriers exceeds the Ioffe–Regel–Mott limit. The incoherent spectral response of the doped charges manifests itself as a broad mid-infrared feature. We also report the first observation of splitting of an infrared-active phonon due to local Jahn–Teller distortion in the vicinity of the thermally driven transition to the nonmetallic, paramagnetic phase in LSMO. This demonstrates that infrared spectroscopy is capable of detecting the presence of local lattice distortions in correlated electron systems.     

Magnetotransport characteristics of strained La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> epitaxial manganite films

The electrical and magnetic characteristics of La_0.7Sr_0.3MnO₃ (LSMO) epitaxial manganite films are investigated by different methods under conditions when the crystal structure is strongly strained as a result of mismatch between the lattice parameters of the LSMO crystal and the substrate. Substrates with lattice parameters larger and smaller than the nominal lattice parameter of the LSMO crystal are used in experiments. It is shown that the behavior of the temperature dependence of the electrical resistance for the films in the low-temperature range does not depend on the strain of the film and agrees well with the results obtained from the calculations with allowance made for the interaction of electrons with magnetic excitations in the framework of the double-exchange model for systems with strongly correlated electronic states. Investigations of the magneto- optical Kerr effect have revealed that an insignificant (0.3%) orthorhombic distortion of the cubic lattice in the plane of the NdGaO₃(110) substrate leads to uniaxial anisotropy of the magnetization of the film, with the easy-magnetization axis lying in the substrate plane. However, LSMO films on substrates (((LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7)(001)) ensuring minimum strain of the films exhibit a biaxial anisotropy typical of cubic crystals. The study of the ferromagnetic resonance lines at a frequency of 9.76 GHz confirms the results of magnetooptical investigations and indicates that the ferromagnetic phase in the LSMO films is weakly inhomogeneous.     

Spin-spin correlations in the insulating and metallic phases of the Mott system V 2 O 3

The magnetic response in V ₂ O ₃ has been investigated using polarised neutron scattering with polarisation analysis. Measurements were carried out at three temperatures corresponding to the antiferromagnetic insulating ground state, the metallic phase and the high temperature metallic phase. At the first order metal insulator transition there is a dramatic change in the magnetic response with the metallic and high temperature metallic phases being characterised by ferromagnetic spatial correlations of the paramagnetic response. The establishment of ferromagnetic correlations at the metal insulator transition accounts for the abrupt jump in the uniform susceptibility. It is proposed that the differentiation of the V-V distances across the edges of VO ₆ octahedra is of critical importance for the change in electronic conductivity but also for the establishment of the spatial correlations. The gradual high temperature evolution of the conductivity then occurs by the reduction in the vanadium d overlap brought about by thermal expansion. The first order reduction in atomic volume which occurs on the establishment of the metallic phase results from an instability of the vanadium local moment arising from the change in electronic structure. Received 7 April 1999     

Modulation of ultrafast laser-induced magnetization precession in BiFeO<Subscript>3</Subscript>-coated La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> thin films

The ultrafast laser-excited magnetization dynamics of ferromagnetic (FM) La_0.67Sr_0.33MnO₃ (LSMO) thin films with BiFeO₃ (BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique. Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect. The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films, which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.     

Interfacial spin interactions of ferromagnetic and antiferromagnetic manganite bilayers

A pulsed laser deposition technique was used to grow ferromagnetic La_0.7Sr_0.3MnO₃ (LSMO) films on antiferromagnetic La_0.33Ca_0.67MnO₃ (LCMO) and Pr_0.7Ca_0.3MnO₃ (PCMO) films in bilayer forms. The LSMO film on the PCMO layer had a more elongated out-of-plane lattice than that on the LCMO layer. The former had a lower ferromagnetic transition temperature (320 K) than the latter (350 K). The enhanced low-temperature magnetoresistance of the LSMO/PCMO bilayer suggests that the spin frustration is stronger at this bilayer than in the LSMO/LCMO bilayer. These differences indicate that strain state and defect concentration play important roles in governing interfacial spin interactions.     

Pressure effect on magnetic and insulator–metal transition of La0.67Pb0.33Mn0.9Co0.1O2.97 ceramic

In our paper, we study the effect of hydrostatic pressure on the magnetic and insulator–metal transitions of La_0.67Pb_0.33Co_0.1Mn_0.9O_2.97 manganite. The insulator–metal transition does not coincide with the magnetic transition in this ceramic. The compound undergoes the paramagnetic–ferromagnetic phase transition at T _C=260 K and the insulator–metal transition at T _p=184?K at ambient pressure. We have found that both characteristic temperatures T _C and T _p increase with increasing hydrostatic pressure with Δ T _C/Δ p=11.2 K/GPa and Δ T _p/Δ p=20.1 K/GPa, respectively.     

Strain relaxation in the epitaxy of La2/3Sr1/3MnO3 grown by pulsed-laser deposition on SrTiO3(001)

With a Curie point at 370?K, the half-metal (La_0.7Sr_0.3)MnO₃ (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO₃ (STO) is up to now the best substrate for the epitaxy of suitable thin films of LSMO. The pseudocubic unit cell of rhombohedral LSMO has a parameter a _LSMO such that (a _STO ? a _LSMO)/a _LSMO = +?0.83% (where a _STO is the parameter of cubic STO) and an angle of 90.26°. As strained growth is tetragonal, relaxation implies recovery of both the pseudocubic parameter and of the original angle. In the LSMO layers that we prepare by pulsed-laser deposition, we show that these two processes are quite independent. The angular distortion is partially recovered by twinning in films 25?nm thick, while recovery of the parameter never occurs in the thickness range that we explored (up to 432?nm). A relaxation, however, takes place above a thickness of 100?nm, associated with a transition from two-dimensional to three-dimensional columnar growth. It is accompanied by chemical fluctuations. Our magnetic measurements exhibit Curie temperatures and magnetic moments very close to the bulk values in those layers where the crystal parameter is strained but the angle partially relaxed.     

Strain effect on transport properties of <Emphasis Type="Bold">SrRuO</Emphasis><Subscript><Emphasis Type="Bold">3</Emphasis></Subscript> films grown by laser MBE

Transport properties of SrRuO₃ thin films were studied as a function of the epitaxial strain. SrRuO₃ films were grown on (100) SrTiO₃ substrates by the Pulsed Laser Deposition technique equipped with Reflection High Energy Electrons Diffraction (RHEED). Samples thickness has been varied from a few unit cells to above 1000 ? while monitoring RHEED intensity oscillations. In thicker films epitaxial strain was found to be progressively relaxed. SrRuO₃ relaxed films (thickness 1000 ?) show metallic behavior for the whole temperature range with a ferromagnetic ordering at about 150 K. For thinner films, ferromagnetic ordering occurs at progressively lower temperatures, until in films thinner than 400 ? it disappears. Films thinner than 80 ? show a semiconducting behavior at low temperatures. Our results provide direct evidence of the crucial role of the strain effect for conducting and magnetic properties of SrRuO₃. Received 16 July 2001 and Received in final form 22 October 2001     

Modulated room temperature magnetoresistance in manganite superlattices

In this study, the spacer-thickness-dependent room-temperature magnetoresistance (RTMR) is investigated in ferromagnetic/antiferromagnetic (FM/AFM) superlattices composed of 10 repetitions of La_0.7Sr_0.3MnO₃/Nd_0.6Ca_0.4MnO₃ [LSMO/NCMO]₁₀. A series of superlattice samples with the thickness of the LSMO layer being fixed at 5 nm while that of the NCMO layer varied from 0 to 5 nm were fabricated using pulsed laser deposition. RTMR is measured at the fields from zero to 10 kOe with two different configurations, in plane (IP) and out-of-plane (OOP). At 10 kOe, RTMR varies with increasing spacer thickness of NCMO at both IP and OOP configurations. A maximum IP MR ratio of 16% at 10 kOe is found in the sample of [LSMO(5 nm)/NCMO(0.45 nm)]₁₀, which is three times that for the pure LSMO film. Therefore, it is concluded that the inserting of the NCMO layer between LSMO layers can effectively tune the RTMR ratio, which might be related to the magnetic coupling between FM and AFM domains.     

Impacts of compressive strain on phase diagram of epitaxial Pr0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)

Series Pr_0.5Sr_0.5MnO₃ (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO₃ using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at a temperature of ∼190 K. Such a FMM-AFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain.     

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

Polycrystalline La_0.7Sr_0.3MnO₃ (LSMO) films were prepared on SiO₂/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction.     

外延生长La0.7Sr0.3MnO3薄膜厚度对缺陷影响的慢正电子分析

采用脉冲激光沉积方法在(LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7衬底上外延生长了La_0.7Sr_0.3MnO₃薄膜,并采用慢正电子束方法分析了薄膜在不同厚度和不同退火气氛下参数S的变化. 分析表明,薄膜中包含两种机制引入的氧空位,分别是薄膜生长气氛中氧压偏低造成薄膜的氧缺乏和由于薄膜应变引入空位型缺陷. 当薄膜厚度较薄时,应变造成的晶格畸变化比较大,当薄膜的厚度大于11 nm时,薄膜的应变驰豫已经比较完全. 原位退火的样品中正电子主要是被氧缺乏引起的氧空位捕获. 在氧气中退火的样品,S随厚度的变化反映了应变对薄膜微结构的影响.     

Effect of magnetic film thickness on rectifying properties of La0.8Sr0.2MnO3/TiO2 heterostructures

The La_0.8Sr_0.2MnO₃ (LSMO)/ TiO₂ heterostructures with different thicknesses of the LSMO films were successfully synthesized using the RF magnetron sputtering technique. Excellent rectifying characteristics are presented in all heterostructures in a wide temperature range. The differences of the diffusive potentials for three heterojunctions are very little at 300 K. The samples exhibit a high resistance that plays an important role on their rectifying properties. The diffusive potential decreases with increasing temperature. The result is attributed to both the reduction of the thickness of the deletion layer due to the thermal diffusion and the modulation of the interfacial electronic structure of the heterostructures. The metal-insulator (M-I) transition is observed clearly from the single LSMO layers and the LSMO/ TiO₂ p-n heterojunctions.     

La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> thin films on SrTiO<Subscript>3</Subscript> and CaTiO<Subscript>3</Subscript> buffered Si substrates: structural,static, and dynamic magnetic properties

Nearly 50-nm thick La_0.7Sr_0.3MnO₃ (LSMO) films were grown on Si substrates using molecular beam epitaxy on (001) Si substrates over-layered by a 20 nm thick SrTiO₃ (STO) or by a 20 nm thick CaTiO₃ (CTO) film. In addition, a reference LSMO film was directly deposited on a (001) STO substrate by pulsed laser deposition. For all the samples, X-ray diffraction revealed an excellent epitaxy of the LSMO film and small mosaicity around (001), with in-plane [100] and [010] cubic axes. The LSMO/CTO films are in-plane compressed while the LSMO/STO ones are in-plane extended. The temperature dependence of their static magnetic properties was studied using a SQUID, showing a Curie temperature overpassing 315 K for all the samples. Hysteresis loops performed at room temperature (294 K) with the help of a vibrating sample magnetometer (VSM) are also discussed. At 294 K Micro-strip ferromagnetic resonance (MS-FMR) was used to investigate the dynamic magnetic properties. It allows concluding to a strong anisotropy perpendicular to the films and to a weak fourfold in-plane anisotropy with easy axes along the [110] and [1[`1]0 1\bar{1}0 ] directions. Their values strongly depend on the studied sample and are presumably related to the strains suffered by the films.