Measurement of Spin Singlet-Triplet Qubit in Quantum Dots Using Superconducting Resonator

The spin qubit in quantum dots is one of the leading platforms for quantum computation.A crucial requirement for scalable quantum information processing is the high efficient measurement.Here we analyze the measurement process of a quantum-dot spin qubit coupled to a superconducting transmission line resonator.Especially,the phase shift of the resonator is sensitive to the spin states and the gate operations.The response of the resonator can be used to measure the spin qubit efficiently,which can be extend to read out the multiple spin qubits in a scalable solid-state quantum processor.     

Simple scheme for multiqubit quantum controlled phase-flip gate with singlet-triplet spin qubits in nanowire double quantum dots

We propose an alternative scheme for one-step implementing three-qubit controlled phase-flip gate of spin qubits in spatially separated double quantum dots with a superconducting stripline resonator (SSR). Due to the switchable coupling effect between the double quantum dots and SSR, the present scheme could be easily generalized for multi-qubits. The feasibility of the present scheme is characterized by exact numerical simulations that incorporate various sources of experimental noise. Our results show the possibility to realize this proposed scheme within current experimental technologies.     

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields.A strong spin-polarized current can be obtained by changing the dc magnetic field.It is mainly due to the resonant tunnelling.But for the ferromagnetic right electrode,the electron spin resonance also plays an important role in transport.We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.     

Transport spectroscopy of an impurity spin in a carbon nanotube double quantum dot

We make use of spin selection rules to investigate the electron spin system of a carbon nanotube double quantum dot. Measurements of the electron transport as a function of the magnetic field and energy detuning between the quantum dots reveal an intricate pattern of the spin state evolution. We demonstrate that the complete set of measurements can be understood by taking into account the interplay between spin-orbit interaction and a single impurity spin coupled to the double dot. The detection and tunability of this coupling are important for quantum manipulation in carbon nanotubes.     

Electron spins in an array of tunnel-coupled quantum dots

Mechanisms of electron spin relaxation in semiconductor arrays with tunnel-coupled quantum dots are reviewed. The contribution for anisotropic exchange interaction is shown for asymmetrical quantum dots having no inversion axis relative to their plane. The configuration of vertically coupled double Ge/Si quantum dots is found where anisotropic exchange coupling does not contribute to spin decoherence. It could be a basic configuration of spin-based quantum computation schemes.     

Voltage-selective bidirectional polarization and coherent rotation of nuclear spins in quantum dots

We propose and demonstrate that the nuclear spins of the host lattice in GaAs double quantum dots can be polarized in either of two opposite directions, parallel or antiparallel to an external magnetic field. The direction is selected by adjusting the dc voltage. This nuclear polarization manifests itself by repeated controlled electron-nuclear spin scattering in the Pauli spin-blockade state. Polarized nuclei are also controlled by means of nuclear magnetic resonance. This Letter confirms that the nuclear spins in quantum dots are long-lived quantum states with a coherence time of up to 1 ms, and may be a promising resource for quantum-information processing such as quantum memories for electron spin qubits.     

Valley-based noise-resistant quantum computation using Si quantum dots

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.     

Electric field control of spin splitting in III–V semiconductor quantum dots without magnetic field

We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.     

Self-polarization and dynamical cooling of nuclear spins in double quantum dots

The spin-blockade regime of double quantum dots features coupled dynamics of electron and nuclear spins resulting from the hyperfine interaction. We explain observed nuclear self-polarization via a mechanism based on feedback of the Overhauser shift on electron energy levels, and propose to use the instability toward self-polarization as a vehicle for controlling the nuclear spin distribution. In the dynamics induced by a properly chosen time-dependent magnetic field, nuclear spin fluctuations can be suppressed significantly below the thermal level.     

Induced quantum dots and wires: electron storage and delivery

We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interacting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots store the electrons in specific locations of the nanostructure. Induced dots and wires can be useful for devices operating on the electron spin. An application for a spin readout device is proposed.     

ac-Driven double quantum dots as spin pumps and spin filters

We propose and analyze a new scheme of realizing both spin filtering and spin pumping by using ac-driven double quantum dots in the Coulomb blockade regime. By calculating the current through the system in the sequential tunneling regime, we demonstrate that the spin polarization of the current can be controlled by tuning the parameters (amplitude and frequency) of the ac field. We also discuss spin relaxation and decoherence effects in the pumped current.     

Spin polarization in parallel double dots with spin-orbit interaction

Spin polarization in parallel double quantum dots embedded in arms of Aharonov-Bohm interferometer is investigated. The spin-orbit interaction exists in quantum dots. We find that the spin polarization is quite large even with a weak spin-orbit interaction. The direction and the strength of the spin polarization are well controllable and manipulatable by simply varying the strength of spin-orbit interaction or the energy levels in quantum dots. Moreover, electron-electron interaction strengthens the spin accumulation when the energy levels of the two quantum dots are identical. As the energy levels are unequal, electron-electron interaction cannot increase the spin accumulation. It is worth mentioning that the device is free of a magnetic field or a ferromagnetic material and it can be easily realized with present technology.     

Transport in graphene nanostructures

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene.     

Coherent spin precession of electrons and excitons in charge tunable InP quantum dots

Coherent spin precession of electrons and excitons is observed in charge tunable InP quantum dots under the transverse magnetic field by means of time-resolved Kerr rotation. In a quantum dot doped by one electron, spin precession of the doped electron in the quantum dot starts out of phase with spin precession of the doped electrons in a GaAs substrate just after a trion is formed and persists for more than 2 ns even after the trion recombines. Simultaneously spin precession of a trion (hole) starts. Observation of spin precession of both a doped electron and a trion (hole) confirms creating coherent superposition of an electron and a trion as the initialization process of spin of doped electrons in quantum dots. In a neutral quantum dot, the exciton spin precession starts out of phase with spin precession of the doped electrons in a GaAs substrate and the precession frequency does not converge to 0 at the zero field limit. It contains the electron–hole exchange interaction and corresponds to the splitting between bright and dark excitons under the transverse magnetic field.     

Direct observation of the electron spin relaxation induced by nuclei in quantum dots

We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.     

Frequency-selective single-photon detection using a double quantum dot

We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge-detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.     

Measurement of a heavy-hole hyperfine interaction in InGaAs quantum dots using resonance fluorescence

We measure the strength and the sign of hyperfine interaction of a heavy hole with nuclear spins in single self-assembled quantum dots. Our experiments utilize the locking of a quantum dot resonance to an incident laser frequency to generate nuclear spin polarization. By monitoring the resulting Overhauser shift of optical transitions that are split either by electron or exciton Zeeman energy with respect to the locked transition using resonance fluorescence, we find that the ratio of the heavy-hole and electron hyperfine interactions is -0.09 ± 0.02 in three quantum dots. Since hyperfine interactions constitute the principal decoherence source for spin qubits, we expect our results to be important for efforts aimed at using heavy-hole spins in quantum information processing.     

串型耦合双量子点处于自旋阻塞区时磁输运性质的研究

使用双杂质安德森模型的哈密顿量,从理论上研究了串型耦合双量子点系统处于自旋阻塞区时的磁输运性质,并用主方程近似方法求解了哈密顿量.结果表明,自旋轨道耦合作用导致的双量子点间的自旋反转隧穿能够解除系统的自旋阻塞.同时也研究了超精细相互作用导致的在量子点内自旋反转和双量子点之间的自旋关联对系统的磁输运性质的影响,取得了一些有价值的结果,并对相关的物理问题进行了讨论.     

Spin-polarized current through a lateral double quantum dot with spin–orbit interaction

We study the spin-polarized current through a vertical double quantum dot scheme. Both the Rashba spin–orbit (RSO) interaction inside one of the quantum dots and the strong intradot Coulomb interactions on the two dots are taken into account by using the second-quantized form of the Hamiltonian. Due to the existence of the RSO interaction, spin-up and spin-down electrons couple to the external leads with different strengths, and then a spin polarized current can be driven out of the middle lead by controlling a set of structure parameters and the external bias voltage. Moreover, by properly adjusting the dot levels and the external bias voltages, a pure spin current with no accompanying charge current can be generated in the weak coupling regime. We show that the difference between the intradot Coulomb interactions strongly influences the spin-polarized currents flowing through the middle lead and is undesirable in the generation of the net spin current. Based on the RSO interaction, the structure we propose can efficiently polarize the electron spin without the usage of any magnetic field or ferromagnetic material. This device can be used as a spin-battery and is realizable using the present available technologies.     

铯铅溴量子点的合成与发光性质

通过改进的热注射法制备了铯铅溴量子点材料。制得的量子点属于立方相结构,形貌是纳米立方体形状,尺寸均匀,边长约为10 nm,分散良好,在空气中可稳定2个月以上。铯铅溴量子点有较宽的激发光谱和强烈的绿光发射峰,荧光呈双指数过程衰减,平均寿命为纳秒量级。所得的量子点胶体可以通过滴制或旋涂的方法制成均匀的薄膜,在太阳能电池、光电探测器、LED和激光等半导体光电领域都有潜在的应用。