Improved optical and electrical properties of sol–gel-derived boron-doped zinc oxide thin films

Sol–gel spin-coating was used to grow zinc oxide (ZnO) thin films doped with 0–2.5 at.% B on quartz substrates. The structural, optical, and electrical properties of the thin films were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet–visible spectroscopy, and van der Pauw Hall-effect measurements. All the thin films had deposited well onto the quartz substrates and exhibited granular morphology. The average crystallite size, lattice constants, residual stress, and lengths of the bonds in the crystal lattice of the thin films were calculated from the XRD data. The PL spectra showed near-band-edge (NBE) and deep-level emissions, and B doping varied the PL properties and increased the efficiency of the NBE emission. The optical transmittance spectra for the undoped ZnO and boron-doped zinc oxide (BZO) thin films show that the optical transmittance of the BZO thin films was significantly higher than that of the undoped ZnO thin films in the visible region of the spectra and that the absorption edge of the BZO thin films was blue-shifted. In addition, doping the ZnO thin films with B significantly varied the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties such as the carrier concentration, mobility, and resistivity of the thin films.     

Structural and electrical properties of Li doped ZnO under Ar/H2 atmosphere

Thin films of ZnO were grown by the sol–gel method using spin-coating technique on (0001) sapphire substrates. The effect of doping under Ar/H₂ atmosphere on the structural and electrical properties of ZnO was investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), I–V characterization, Hall effect and micro-photoluminescence. The films that were annealed at 600 °C in Ar/H₂ (95/5) % atmosphere showed (002) a predominant orientation. The crystalline nature of 2 mol.  % of Li doped films were better when compared to 1 mol.  % of Li doped films. The incorporation of Li in ZnO lattice was confirmed by X-ray photoelectron spectroscopy, and micro-photoluminescence. Hall effect measurements and I–V characterization of the Li doped ZnO thin films exhibited a better p-type behavior.     

Effect of lithium doping on the photoluminescence of Sm:ZnO powders

ZnO co-doped with 2 at.% Sm and different Li concentration (0–7 at.%) powders were fabricated by the sol–gel method with 700 °C annealing. The effect of Li doping concentration on the structure and photoluminescence (PL) of ZnO powders doped with 2 at.% Sm was investigated. Based on the balance of structure and valence, with the help of Li doping (1, 2 at.%) into ZnO powders doped with 2 at.% Sm, Sm³⁺ ions enter ZnO crystal lattice and induce the characteristic Sm³⁺ emission peaks by the ultra-violet (UV) excitation (278 nm). Especially, when the Li doping concentration is 2 at.%, the sample has the most efficient Sm characteristic emission line. However, Li will hinder the substitution of zinc location by Sm³⁺ when the Li doping concentration is above 3 at.%, which results in the disappearance of the characteristic samarium emission lines.     

Preparation and optical–electrical properties of Al-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO thin films are highly attractive in the development of materials area. In this paper, Al-doped ZnO thin films were prepared by sol–gel dipping and drawing technology and their composition, structure and optical–electrical properties were investigated. XRD results shows that the Al-doped ZnO thin film is of polycrystalline hexagonal wurtzite structure, and the (002) face of the thin film has the strongest orientation at the annealing temperature of 550 °C. The surface resistance of Al-doped ZnO thin film firstly drops and then increases with the increase in annealing temperature. Al doping concentration is also an important factor for improving the conductivity of modified ZnO thin films, and the surface resistance has the tendency to drop at first and then to increase when the Al concentration is increasing. The surface resistance of modified ZnO thin films drops to the lowest point of 139 KΩ sq^?1 when the Al concentration is 1.6 at% and the annealing temperature is 500 °C. The light transmission measurements show that the doping concentration has little influence on light transmittance. The transmittance at the visible region of films is all over 80 %, and the highest value is up to 91 %.     

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.     

Structural and optical properties of Na doped ZnO nanocrystalline thin films synthesized using sol–gel spin coating technique

Sodium (Na) doped Zinc oxide (ZnO) thin films have been deposited on a glass substrate by the sol–gel spin coating method. Effect of doping with various percentages of Na at a particular annealing temperature of 500 °C is studied. The samples were characterized by X-ray diffraction (XRD), micro-photoluminescence, Raman and Polarized Raman spectroscopy. The X-ray diffraction and micro-Raman spectroscopy confirmed the presence of Na substitution in zinc oxide and the wurtzite structure of the lattice is retained. An enhancement of resonant Raman scattering processes as well as longitudinal optical phonon overtones up to the fifth order were observed in the micro Raman spectra. The similar values of depolarization ratios obtained from Polarized Raman studies recommend no change in the symmetry. Photoluminescence showed a strong emission peak in the near UV at 3.2 eV and negligible visible emission.     

50 keV H+ ion beam irradiation of Al doped ZnO thin films: Studies of radiation stability for device applications

Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C using DC magnetron sputtering. These films were bombarded with 50 keV H⁺ beam at several fluences. The pristine and ion beam irradiated films were analysed by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV‐Vis spectroscopy. The X‐ray diffraction analysis, Hall measurements, Raman and UV‐Vis spectroscopy confirm that the structural and transport properties of Al:ZnO films do not change substantially with beam irradiation at chosen fluences. However, in comparison to film deposited at room temperature, the Al:ZnO thin film deposited at 300°C shows increased transmittance (from 70% to approximately 90%) with ion beam irradiation at highest fluence. The studies of surface morphology by scanning electron microscopy reveal that the ion irradiation yields smoothening of the films, which also increases with ion fluences. The films deposited at elevated temperature are smoother than those deposited at room temperature. In the paper, we discuss the interaction of 50 keV H⁺ ions with Al:ZnO films in terms of radiation stability in devices.     

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.     

SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO₂) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10^?7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E _gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E _gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.     

Effect of Al-doping on the structure and optical properties of electrospun zinc oxide nanofiber films

Electrospun ZnO precursor nanofibers of average diameters 122±64 nm, 117±44 nm and 110±39 nm were fabricated by controlling the Al concentration of a polymeric solution. The resulting nanofibers were characterized by the XRD, SEM, EDS, TEM, XPS and PL. The electrospun Al-doped ZnO nanofiber films were polycrystalline and composed of densely packed grains, with crystallite size ranging from 28.7 nm, 25.7 nm, 25.4 nm to 20.4 nm corresponding to the atomic concentration of aluminum from 0, 1.6, 2.5 to 5.8 at.%. The incorporation of aluminum resulted in a decrease trend in the grain size and lattice parameter of the ZnO nanofiber films. The room temperature PL spectra of all samples show three different emissions, including UV (ultraviolet) emission with an obvious blue shift, Vis (visible) emission and NIR (near infrared) emission, the intensity of which decreases monotonically as the doping concentration is increased except for the highest doping level. The impurity content correlates with changes in the PL spectra, and the appropriate Al doping can improve the optical properties of ZnO nanofibers. The small size effect and Al-doping or the impurity incorporation should be responsible for the blue shift observation in Al-doped ZnO nanofiber films.     

A wet chemical preparation of transparent conducting thin films of Ga-doped ZnO nanoparticles

Crystalline gallium doped zinc oxide (GZO) nanopowders were synthesized using hydrothermal treatment processing. The doping concentration affected the phase structure as well as the shape of the nanopowder from nano rod-like structure to nanoparticulate one. The specific BET surface area increases with increasing the gallium doping concentration. Transparent conducting films were deposited on borosilicate glass substrate by spin coating using sols containing GZO nanoparticles dispersed in 1-propanol. The films are crystalline with a hexagonal structure. The effect of Ga doping concentration, sintering temperature and thickness of the layers has been investigated. The lowest resistivity achieved was 6.4 × 10^?2 Ω cm for a thickness of 150 nm. The films present a transmittance in the visible range as high as 90 %.     

Physical properties of suspension ZnO nanoparticles prepared by wet chemical method: Comparison study

In this work a suspension of Nano-crystalline of ZnO particle is prepared by wet chemical at different temperature and concentration. From FTIR spectral exhibit present of Zn–O bond which indicate to formation ZnO particles. While all suspension and nano films exhibit a high transmittance in visible region about 90% which falls sharply in the UV region. The particle size is measured by using effective mass approximation (EMA), which was approximation (1.7–1.96 nm), and the band gap changes from 3.95 to 4.52eV for nanoparticles in suspension, and change from 3.76 to 3.94 eV for nanoparticles in ZnO film, which is change as function of concentration, temperature and aging time. Hall Effect measurements for ZnO films exhibit n-type conductivity for films deposited with activation energy 0.742eV at high temperature and 0.178eV at low temperature which is different as prepared sample conditions. Also the nanoparticle suspension and nanoparticle film could be implemented as a filter with variable cut off (8.9 × 10¹⁴–1.28 × 10¹⁵) H_Z.     

Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure,optical, photoluminescence and electrical properties

The microstructure, optical, photoluminescence and electrical properties of ZnO based films deposited onto FTO glass substrates by ultrasonic spray pyrolysis have been investigated. For comparison and a better understanding of physical properties of indium- and aluminum-doped ZnO and undoped ZnO thin films, X-ray diffraction analysis, photoluminescence spectra, optical, SEM texture and electrical conductivity analyses were performed. The AZO and IZO films exhibit the nanofiber structure with diameters 260 and 400 nm. X-ray diffraction showed all samples to be polycrystalline with hexagonal ZnO. The optical band gaps of the films were varied by Al and In dopants. The photoluminescence spectra of the films show a weak broad in the visible range and shifted to green emission for indium doping and to the green blue emission for aluminum as dopant. The width of the PL spectra for aluminum-doped films is too large compared to those of the indium-doped ones. The electrical conductivity of the ZnO film changes with Al and In dopants. The position of donor levels changes with In and Al dopants and approaches the conduction band level with the metal dopants. The obtained results suggest that the metal doping has a clear effect upon the growth, optical, photoluminescence and electrical conductivity properties of the ZnO films.     

Microstructure and optical properties of Ag-doped ZrO2 thin films prepared by sol gel method

Ag doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. The effect of Ag doping on tetragonal to monoclinic phase transformation of ZrO₂ at a lower temperature (500 °C) was investigated by X-ray diffraction. It is found that the Ag doping promotes the phase transformation. The phase transformation can be attributed to the increase in the tetragonal grain size and concentration of oxygen vacancies in the presence of the Ag dopant. Accumulation of the Ag atoms at the film surface and surface morphology changes in the films were observed by AFM as a function of varying Ag concentration. X-ray photoelectron spectroscopy gave Ag 3d and O 1s spectra on Ag doped thin film. The chemical states of Ag have been identified as the monovalent state of Ag⁺ ions in ZrO₂. The Ag doped ZrO₂ thin films demonstrated the tailoring of band gap values. It is also found that the intensity of room temperature photoluminescence spectra is suppressed with Ag doping.     

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

ZnO thin films were successfully deposited on SiO₂/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.     

Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates

Silver (Ag) doped and undoped ZnO films were grown on Si (100) substrates by the sol-gel process. Photoluminescence (PL) of two kinds of samples as a function of the excitation intensity has been measured, and PL intensities have been fitted by a power law. It is found that Ag doping increases the intensity of free emission from ZnO and does not change the position and the full width at half-maximum of the free exciton emission. In PL spectra of two kinds of samples under various excitation powers, no visible emission bands related to the deep levels were observed. These results reveal that doped Ag in ZnO films only enhances emission efficiency from free exciton recombination, not giving rise to new emissions.     

Preparation and Characterization of Bismuth Doped TiO2 Thin Films

A series of Bismuth-doped titanium oxide (Bi-doped TiO₂) thin films on glass substrates have been prepared by sol-gel dip coating process. The prepared catalysts were characterized by XRD and XPS. The photocatlytic activity of the thin film catalysts was evaluated through the photodegradation of aqueous methyl orange under UV illumination. The experiments demonstrated that the Bi-doped TiO₂ prepared was anatase phase. The doped bismuth was in the 3⁺ oxidation state. The presence of Bi significantly enhanced the photocatalytic activity of TiO₂ films. At calcination temperature of 500°C, with doping concentration of 2 wt %, Bi-doped TiO₂ thin film showed the highest photocatalyic activity.     

100 keV H+ ion irradiation of as‐deposited Al‐doped ZnO thin films: An interest in tailoring surface morphology for sensor applications

We report the influence of 100 keV H⁺ ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as‐deposited Al‐doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10¹² to 3.0 × 10¹⁴ ions/cm². The virgin and ion‐irradiated films were characterized by X‐ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X‐ray diffraction spectra, 5 points Williamson‐Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root‐mean‐square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion‐matter interactions especially energy losses by the ion beam in the material.     

Sol–gel synthesis of ZnO–SiO2 thin films: impact of ZnO contents on its photonic efficiency

Highly crystalline ZnO–SiO₂ films obtained by a sol–gel method at different ZnO contents were deposited on silicon substrate (P(100)) using spin coating process. The XRD results revealed that the strong ZnO(100) peak is grown with highly c-axis oriented film and the crystallinity is progressively improved with increasing ZnO contents. SEM micrographs of the films deposited on silicon substrate show a homogeneous and uniformity structure at different ZnO content. The prepared ZnO–SiO₂ films are compared with either a film prepared from a commercial photocatalysts Hombikat UV-100 or Pilkington Glass Activ? by the determination of their photonic efficiencies for degradation of methylene blue. The photocatalytic efficiency of the 10 wt% ZnO–SiO₂ film was found to be about four times higher than film prepared from UV-100 or Pilkington Glass Activ?. The photocatalytic efficiencies of ZnO–SiO₂ films are increased with increasing ZnO content from 1 wt% to 10 wt% ZnO and then decreased at 15 wt% ZnO. The order of photocatalytic efficiencies of ZnO–SiO₂ films at different ZnO content and commercial photocatalysts after 6 h illumination were as following: 10 wt% ZnO > 15 wt% ZnO > 1 wt% ZnO > as-prepared 10 wt% ZnO–SiO₂ film > UV-100 > Pilkington Glass Activ?, which suggested that the ZnO–SiO₂ films are photoactive than commercial photocatalysts. The improved efficiency and potentially the low-cost synthesis suggest that this material might be practically useful as a photocatalyst film.     

Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film’s crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov–Johnson–Mehl–Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 × 10^?5 Torr water vapor pressure was determined to be 30.7 kJ mol^?1, which is higher than 18.9 kJ mol^?1 for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O–H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.