High quality GaAs quantum wires grown by flow rate modulation epitaxy

Accepted: 14 October 1997     

Pulsed laser deposition of NiTi shape memory effect thin films

2 O₃(100) substrates. We also produced free-standing NiTi films by deposition on KBr substrates and subsequent substrate removal by immersion in water. The presence of the solid-solid phase transformation responsible for the shape memory effect has been demonstrated through temperature-dependent X-ray diffraction and four-probe resistance versus temperature measurements. On cooling the deposited film, the austenite-martensite transformation was measured at around 195 K; on heating the film the reverse transformation was around 250 K. Evidence of the shape-memory effect for free-standing films was obtained in a bending deformation-shape recovery experiment. Received: 31 July 1996/Accepted: 6 January 1997     

Non-thermal ablation of neural tissue with femtosecond laser pulses

2 ; for 100 fs pulses from the same laser the experimental threshold was at 1.5 J/cm². Histopathological examinations and scanning electron micrographs confirm the high quality of the excisions. No sign of significant thermal damage was observed. Received: 29 January 1997/Revised version: 14 July 1997     

Size effect in optical spectra of microcrystalline diamond powders and CVD films

Received: 24 March 1997/Accepted: 27 May 1997     

Photo-decomposition of thin palladium acetate films with 126 nm radiation

2 O₃, AlN and Si substrates produced by vacuum ultraviolet induced decomposition of palladium acetate is described. The palladium films formed and the palladium acetate layers used were characterised by using ultraviolet spectrophotometry and Fourier transform infrared (FTIR) spectroscopy. The optical transmission of the films after irradiation with pseudo-continuous 126 nm radiation generated by an excimer lamp provided information about the decomposition rate at different pressures and exposure times. The FTIR spectra recorded the chemical changes of the C=O, COO^- and CH₃ groups at different exposure times. The decomposition mechanism of the palladium acetate under these conditions appears to be quite different to that induced by pulsed laser irradiation. Received: 25 November 1996/Accepted: 1 July 1997     

Canonical dressing in the multimode two-quantum Jaynes-Cummings model

Based upon the hidden Lie SU(1,1) symmetry, we have constructed the unitary decoupling transformation which diagonalizes the multimode two-quantum Jaynes-Cummings model and provides us with an extremely convenient basis to gain a deeper understanding of the dressing processes present in the matter-field interaction. This canonical transformation approach is very simple and can be easily extended to other generalized Jaynes-Cummings models. Received: 5 July 1997 / Revised: 3 November 1997 / Accepted: 14 November 1997     

Optical studies on the deposition of carbon nitride films by laser ablation

2 radicals when the 355 and 1064 nm outputs of a Nd:YAG laser were applied. While for the 532 nm ablation, a relatively higher concentration of excited atomic carbon was obtained. Different Raman and FTIR spectral features were observed from the deposited films with different ablation wavelengths. The 532 nm laser ablation is proposed for the synthesis of high quality carbon nitride films. Received: 16 October 1996 / Accepted: 11 April 1997     

Polymer segmental alignment in polarized pulsed laser-induced periodic surface structures

Received: 14 July 1997/Accepted: 15 July 1997     

Magnetic dipole response in rare earth nuclei

Experimental observations in certain rare earth nuclei have established the presence of sizeable B(M1) strength of two peak structure lying in the 5–10 MeV region. The character of the states concerned, studied within a self-consistent Random Phase Approximation using Skyrme forces, are identified to be that of proton and neutron giant spin-flip resonances. Received: 14 July 1997 / Revised version: 20 October 1997     

Generation of subpicosecond infrared pulses tunable between 5.2 μm and 18 μm at a repetition rate of 76 MHz

2 (2 mm thick) and GaSe (1 mm thick) crystals are applied as nonlinear media. GaSe has a larger tuning range and is more efficient in the whole spectral range than AgGaS₂. The average IR power reaches up to 2.0 mW at 8.5 μm when the GaSe crystal is used, and up to 1.3 mW at the same wavelength when AgGaS₂ is applied for the frequency conversion. Received: 17 February 1997/Revised version: 14 July 1997     

Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV

For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of samples to the 10^-9 mbar UHV range within a very short time (less than 20 s) [1]. Epitaxial InP(100) films were prepared with TBP (tertiarybutylphosphine) and TMIn (trimethylindium) as precursors. In situ reflectance anisotropy spectroscopy (RAS) was carried out in the MOCVD environment. After transfer of the sample to UHV the same RAS spectrum was recovered. Auger-electron spectra (AES) confirmed the P-termination of the surface reconstructions suggested by RAS. Received: 19 October 1998 / Accepted: 21 April 1999 / Published online: 14 July 1999     

Nanoscale atomic lithography with a cesium atomic beam

2 line (852 nm) and a width of about 120 nm and covering a large area of approximately 1 mm². Received: 3 July 1997/Accepted: 7 July 1997     

On thickness dependence of electrical and optical properties of Te thin films

Received: 1 July 1997/Accepted: 6 August 1997     

Ellipsometry study of thin metallic films under constraint by the size effect

Received: 9 July 1997/Accepted: 17 October 1997     

Photoredox laser chemistry of transition metal oxides

Received: 26 May 1997/Accepted: 17 July 1997     

Wide-bandwidth frequency locking of a 1083-nm extended-cavity DBR diode laser to a high-finesse Fabry–Pérot resonator

Received: 28 July 1997/Revised version: 27 November 1997     

Matter-wave amplification and collective internal excitations in a trapped Bose gas

Received: 23 May 1997/Revised version: 29 July 1997     

Selfstarting femtosecond operation and transient dynamics of a diode-endpumped Cr:LiSGaF laser with a semiconductor saturable absorber mirror

Received: 16 July 1997/Revised version: 24 September 1997     

Synthesis, integration, and electrical properties of individual single-walled carbon nanotubes

High-quality single-walled carbon nanotubes (SWNTs) are synthesized by chemical vapor deposition (CVD) of methane on silicon-dioxide substrates at controlled locations using patterned catalytic islands. With the synthesized nanotube chips, microfabrication techniques are used to reliably contact individual SWNTs and obtain low contact resistance. The combined chemical synthesis and microfabrication approaches enable systematic characterization of electron transport properties of a large number of individual SWNTs. Results of electrical properties of representative semiconducting and metallic SWNTs are presented. The lowest two-terminal resistance for individual metallic SWNTs (≈5 μm long) is ≈16.5 kΩ measured at 4.2 K. Received: 17 May 1999 / Accepted: 18 May 1999 / Published online: 14 July 1999     

Ultrashort pulse laser ablation of silicon: an MD simulation study

Received: 30 July 1997/Accepted: 5 August 1997