Catalyst-free synthesis and luminescence of aligned ZnO nanorods

Quasi-aligned undoped ZnO nanorods with diameter in the range 100–300 nm and length of several micrometers have been grown catalyst-free on Si(1 0 0) wafer in a one-step process by direct heating of Zn powders. All nanowires are single crystals and are aligned vertically to the substrate surface with c-axis preferred orientation. XRD, HRTEM and Raman studies revealed that the ZnO nanorods have wurtzite phase, are highly crystalline and well aligned with the lattice parameters a=0.32 nm and c=0.52 nm. The PL spectra measured at different temperatures are dominated by excitonic emission at 380 nm and less intense below band gap emission band centered at 520 nm.     

Optical studies on a coherent InGaN/GaN layer

Photoluminescence (PL), photoluminescence excitation (PLE) and selective excitation (SE-PL) studies were performed in an attempt to identify the origin of the emission bands in a pseudomorphic In_0.05Ga_0.95N/GaN film. Besides the InGaN near-band-edge PL emission centred at 3.25 eV an additional blue band centred at 2.74 eV was observed. The lower energy PL peak is characterized by an energy separation between absorption and emission–the Stokes’ shift–(500 meV) much larger than expected. A systematic PLE and selective excitation analysis has shown that the PL peak at 2.74 eV is related to an absorption band observed below the InGaN band gap. We propose the blue emission and its related absorption band are associated to defect levels, which can be formed inside either the InGaN or GaN band gap.     

Optical properties of GaN nanocrystals embedded into silica matrices

The purpose of this work was to obtain GaN nanocrystals (GaN-nc) embedded into silica-based matrix and to investigate their optical properties by photoluminescence (PL) spectroscopy. GaN-nc have been obtained both by the sol–gel chemistry and by the combustion method (CM). The GaN-nc obtained by CM have been introduced into the silica-based matrix during the formation of the film in the spin-on technique. Strong emission at 3.4 eV has been observed for the films doped by GaN-nc whereas no emission in UV has been observed for GaN-nc obtained by sol–gel chemistry.     

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Single crystal ZnO nanowires diffused with europium (Eu) from a solid source at 900 °C for 1 h or doped with Eu during growth have been characterized. The ZnO nanowires were grown by chemical vapor deposition on Si substrates employing Au as a catalyst. The diameter of the resulting nanowires was 200 nm with a length of 1 μm. Photoluminescence spectra excited by a He–Cd laser at room temperature showed the green luminescence at 515 nm in Eu-diffused nanowires. A small red shift of near-band-edge emission of ZnO nanowires was observed in the diffused wires, but sharp emission from Eu³ ions was not present. Transmission electron microscopy shows crystalline Eu₂O₃ formation on the diffused nanowire surface, which forms a coaxial heterostructure system. When Eu was incorporated during the nanowire growth, the sharp ⁵D_O–⁷F₂ transition of the Eu³⁺ ion at around 615 nm was observed.     

Triode field emitters with planar carbon-nanoparticle cathodes

We designed and fabricated three different types of triode field emitters with planar carbon-nanoparticle (CNP) cathodes such as a normal-gate structure, a double-gate structure, and a well-structure. A normal-gate structure CNP triode emitter showed good field emission properties. The field emission started at the gate-voltage of 45 V, and the anode current reached the level of 120 nA at the gate-voltage of 60 V. However, in general, normal-gate structure suffered from large gate current. Using the double-gate structure, we successfully reduced the gate current to the level less than 4% of anode currents up to the anode current of 250 nA. To simplify fabrication process while maintaining the gate current reduction effect of the double-gate structure, a triode emitter with a well-structure cathode was fabricated via reactive-ion etching of a heavily doped n-type silicon wafer. The triode emitter with a well-structure cathode and a recessed gate structure showed negligible gate current.     

Optical properties of citrate-stabilized CdS nanoparticles

Citrate-stabilized CdS nanoparticles of size 4 nm are obtained by varying the sulfide:citrate ion concentration in a simple aqueous synthesis method. The optical absorption and photoluminescence properties of the nanoparticles are studied. The size of the crystallites is found to be less affected by sulfide:citrate ratio. At lower concentrations of S²⁻, trap state emission is favoured and at higher concentrations excitonic transition is predominant as shown by optical absorption and photoluminescence spectra. Effective surface capping and optimum concentration of S²⁻ leads to the quenching of surface-defect-related emission. Increase in citrate ion concentration is found to increase the intensity of photoluminescence band arising from trap state emission revealing the role of sulfide:citrate ratio on surface modification of CdS nanocrystals. The nanoparticles are hexagonal as shown by the X-ray diffraction and selected area electron diffraction pattern.     

Quantum confinement and interface structure of Si nanocrystals of sizes 3–5 nm embedded in a-SiO2

Spectroscopic ellipsometry and Monte Carlo simulations are employed to answer the fundamental question whether the energy gaps of Si nanocrystals with sizes in the range of 3–5 nm, which are embedded in amorphous silica, follow or deviate from the quantum confinement model, and to examine their interfacial structure. It is shown that the optical properties of these nanocrystals are well described by the Forouhi–Bloomer interband model. Analysis of the optical measurements over a photon-energy range of 1.5–5 eV shows that the gap of embedded nanocrystals with a mean size of 3.9 nm follows closely quantum confinement theory. A large band gap expansion (0.65 eV) compared to bulk Si is observed. The Monte Carlo simulations reveal a non-abrupt interface and a large fraction of interface oxygen bonds. This, in conjunction with the experimental observations, indicates that oxygen states and the chemical disorder at the interface have a negligible influence on the optical properties of the material in this size regime.     

Synthesis and field emission of patterned ZnO nanorods

A simple and self-catalytic method has been developed for synthesizing finely patterned ZnO nanorods on ITO-glass substrates under a low temperature of 500 °C. The patterned ZnO nanorod arrays, a unit area is of 400 × 100 μm², are synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized ZnO nanorods are characterized by means of scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The mechanism of formation of ZnO nanorods is also discussed. The measurement of field emission (FE) reveals that the as-synthesized ZnO nanorods arrays have a turn-on field of 3.3 V/μm at the current density of 0.1 μA/cm² and a low threshold field of 6.2 V/μm at the current density of 1 mA/cm². So this approach must have a potential application of fabricating micropatterned oxide thin films used in FE-based flat panel displays.     

Modification of photonic properties in porphyrin-infiltrated opal crystals

Structural, optical and magnetic properties of porphyrin-infiltrated opal hybrid structures were investigated. Bulk samples of synthetic opal were grown by sedimentation technique from colloidal solution of SiO₂ spheres of diameter 250 nm. The structure of the samples was examined by atomic force microscopy. The photonic properties of crystals were investigated by optical measurements in transmission and reflection modes. The stop band was observed in the region 510–550 nm. The photonic properties of synthetic opal crystals were modified by infiltration with aqueous basic solution of iron–porphyrin (FeTPPS) of concentration 1.0 mM. In hybrid samples the absorption bands typical of FeTPPS were observed in the vicinity of the opal stop band. Magnetic properties of FeTPPS-infiltrated opal samples have been studied at 5–300 K in magnetic fields up to 5 T. The FeTPPS-infiltrated opal crystals can be considered as the structures perspective for magnetophotonic devices.     

Quasi-distributed displacement sensor for structural monitoring using a commercial OTDR

A quasi-distributed displacement sensor for structural monitoring using an optical time domain reflectometer is demonstrated. Four displacement sensing heads are placed along a standard single mode optical fibre in several locations with different intervals. Their configurations introduce power loss through the decrease of their fibre loop radius when displacement is applied. The decrease of the light intensity with displacement variation is reported. Losses of 9 dB for a 120 mm displacement with a sensitivity of 0.027 dB/mm are reported. The quasi-distributed configuration is able to address sensors with 1 m distance resolution between them.     

Fabrication of ZnO nanorod array-based photodetector with high sensitivity to ultraviolet

Large scale densely packed and vertically oriented ZnO nanorod arrays were grown on F-doped SnO₂ (FTO) substrates through a simple hydrothermal synthesis route. Based on the arrays of hexagonal ZnO nanorod with size of 60100 nm in diameter, and 1.5 μm in length, a prototypical photoelectrical device was fabricated for ultraviolet detection, showing good reproducibility and a large photocurrent of around 6.71 mA at the applied voltage of 0.4 V. The large photocurrent and the ohmic I–V characteristics of the ZnO nanorods under the illumination could be ascribed to the decrease of the barrier height among the ZnO nanorods and the Schottky barrier between the nanorods and the Au electrodes and, in particular, to the accumulation of conduction electrons, resulted from the neutralization between photogenerated holes and negatively charged oxygen ions. The photoresponse curve is well fitted to an exponential curve with the relaxation time constant of 9 s in rising edge and 90 s in decaying one, representing the accumulation of conduction electrons. These well-aligned ZnO nanostructures of high quality could be easily fabricated by a cost-effective chemical route and used for constructing nanoscale devices with excellent performances.     

Photoluminescence of ZnO nanostructures grown by the aqueous chemical growth technique

Zinc oxide nanostructured films were grown by the aqueous chemical growth technique using equimolar aqueous solutions of zinc nitrate and hexamethylenetetramine as precursors. Silicon(100) and glass substrates were placed in Pyrex glass bottles with polypropylene autoclavable screw caps containing the precursors described above, and heated at 95 C for several hours. X-ray diffraction 2θ/θ scans showed that the only crystallographic phase present was the hexagonal wurtzite structure. Scanning electron microscopy showed the formation of flowerlike ZnO nanostructures, consisting of hexagonal nanorods with a diameter of a few hundred nanometers. The photoluminescence spectra of the ZnO nanostructures were recorded at 18–295 K using a cw He–Cd laser (325 nm) and a pulsed laser (266 nm). The ZnO nanostructures exhibit an ultraviolet emission band centered at 3.192 eV in the vicinity of the band edge, which is attributed to the well-known excitonic transition in ZnO.     

Carbon nanotube–polymer composites for photonic devices

We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at 1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving 700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.     

Effects of annealing temperature on morphologies and optical properties of ZnO nanostructures

The effects of annealing temperature on the morphologies and optical properties of ZnO nanostructures synthesized by sol–gel method were investigated in detail. The SEM results showed that uniform ZnO nanorods formed at 900 C. The PL results showed an ultraviolet emission peak and a relatively broad visible light emission peak for all ZnO nanostructures sintered at different temperature. The increase of the crystal size and decrease of tensile stress resulted in the UV emission peak shifted from 386 to 389 nm when annealing temperature rose from 850 to 1000 C. The growth mechanism of the ZnO nanorods is discussed.     

Growth mechanism and optical property of CdS nanoparticles synthesized using amino-acid histidine as chelating agent under sonochemical process

Using amino-acid histidine as chelating agent, CdS nanoparticles have been synthesized by sonochemical method. It is found that by varying the ultrasonic irradiation time, we can tune the band gap and particle size of CdS nanoparticles. The imidazole ring of histidine captures the Cd ions from the solution, and prevents the growth of the CdS nanoparticles. The deviation in the linear relation in between cube of radius of nanoparticles and ultrasonic irradiation time confirms the growth of CdS nanoparticles occur via two process; one is the diffusion process of the reactants as well as reaction at the surface of the crystallite. CdS nanoparticles synthesized using histidine as organic chelating agent have band edge emission at 481 nm and have greater photoluminescence intensity with blue-shift to higher energy due to typical quantum confinement effect.     

Selective growth of ZnO nanorods in aqueous solution

ZnO nanorod arrays find applications in solar energy conversion, light emission and other promising areas. One approach to generate ZnO nanorods is the cost efficient aqueous chemical growth (ACG). Usually the ACG process is based on a nucleation step followed by growth of ZnO nanorods in aqueous solution at temperatures below 95 C.We report on the fabrication of homogeneous, large scale arrays of nanorods on various substrate materials (Si, glass, polymer) by ACG. PL-measurements show surprisingly good optical quality although the rods were grown at low temperature.Even though we have developed patterning of these arrays with photolithographic techniques, a bottom up approach for lateral patterning is important concerning further applications especially for mass-production. The substrates with patterned metal layers were employed to realize selective growth of nanorods. The experiments were carried out on Ti-, Ag- and Pt-patterned substrates. Selective growth on metal structured glass substrates was developed and is described.     

Growth mechanism of ZnO nanorods from nanoparticles formed in a laser ablation plume

We have succeeded in synthesizing ZnO nanorods by pulsed-laser ablation at comparatively high gas pressures without using a catalyst. The nanorods had an average size of 300 nm and a length of about 6 m. Stimulated emission was observed from the nanorods at 388 nm by optical pumping. As a catalyst was not used in our method, nanorod growth was not controlled by the vapor-liquid-solid (VLS) mechanism. We found that nanoparticles formed by condensation of ablated particles in the laser ablation plume play an important role in nanorod growth. PACS 61.46.+w; 81.07.Bc; 78.66.Hf; 78.67.Bf; 81.16.Mk     

Nucleation, growth and morphology of Co thin films on Ag(1 1 0)

Scanning tunneling microscopy (STM) experiments reveal that Co growth on Ag(1 1 0), at coverages of Co < 1 ML and low substrate temperatures (150 K), involves a concomitant insertion of Co into the top Ag layer and exchange of Ag out onto the surface. At 300 K, coverages of Co > 1 ML gives rise to a 3D nanocluster growth on the surface, with the clusters covered by Ag. Depending slightly on coverage, the clusters have a typical diameter of 3 nm and a height of 0.4 nm. Upon annealing to 500 K, major changes are observed in the morphology of the surface. STM and AES show that there is a reduction of the number of Co islands on the surface, partly due to subsurface Co cluster migration and partly due to sintering into larger clusters.     

Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition

We have studied temperature dependent photoluminescence (PL) from ZnO Multiple Quantum Wells (MQWs) of different well layer thicknesses in the range 1–4 nm grown on (0001) sapphire by a novel in-house developed buffer assisted pulsed laser deposition. At 10 K the PL peak shifted toward blue with decreasing well layer thickness and at constant well layer thickness the PL peak shifted towards red with increasing temperature. To the best of our knowledge we have observed for the first time an efficient room temperature (RT) PL emanating from such MQWs. The red shift of the PL peak with increasing temperature has been found to be due to the band gap shrinkage in accordance with the Varshni’s empirical relation. The spectral linewidth was found to increase with increasing temperature due to the scattering of excitons with acoustic and optical phonons in different temperature regimes. Both at RT and at 10 K the PL peak shifted with respect to the well layer thickness in the range of 3.35–3.68 eV with decreasing thickness in agreement with the calculated values.     

Dynamics of the collective excitations of the quantum Hall system

Using the non linear optical technique of 3-pulse 4-wave mixing, we study the dynamics of the collective excitations of the quantum Hall system. We excite the system with 100 fs pulses propagating in directions k₁ and k₃ and then probe its time evolution with a delayed pulse k₂. We measure the non-linear optical response from the lowest Landau level along the direction k₁+k₂−k₃. As function of the time delay of pulse k₂, this signal shows striking beats for short time delays (500 fs), followed by a rise (20 ps) and then a decay (100 ps). We identify the microscopic origin of this dynamics by extending the standard theory of ultra fast nonlinear optics to include the effects of the correlations.