Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Surface phase transition and electronic structure of c(5√2 × √2)R45°-Pb/Cu(1 0 0)

The c(5√2 × √2)R45°-Pb/Cu(1 0 0) surface phase is investigated by means of angle resolved ultraviolet photoemission and low energy electron diffraction in the temperature range between 300 and 550 K. We identify and characterize a temperature-induced surface phase transition at 440 K from the room temperature c(5√2 × √2) R45° phase to a (√2 × √2)R45° structure with split superstructure spots. The phase transition is fully reversible and takes place before the two-dimensional melting of the structure at 520 K. The electronic structure of the split (√2 × √2)R45° phase is characterized by a metallic free-electron like surface band. This surface band is backfolded with c(5√2 × √2)R45° periodicity phase at room temperature, giving rise to a surface band gap at the Fermi energy. We propose that a gain in electronic energy explains in part the stability of the c(5√2 × √2)R45° phase.     

Growth of In nanocrystallite arrays on the Si(1 0 0)-c(4 × 12)-Al surface

Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(1 0 0)-c(4 × 12)-Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 °C. In comparison to the case of In deposition onto the clean Si(1 0 0) surface or Si(1 0 0)4 × 3-In reconstruction, the In growth mode is changed by the c(4 × 12)-Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer-Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed.     

Theoretical studies of electronic states and phonon modes on the TiC(0 0 1)(1 × 1) surface

We present a comprehensive picture of structural and electronic properties of the TiC(0 0 1)(1 × 1) surface. Our investigations are based on first-principles calculations within the local-density approximation of the density-functional theory. Good agreement has been observed between our calculation and experimental data for the atomic geometry of the surface. In particular, the calculated bond lengths between the first-layer C and the second-layer Ti (d_1C-2Ti = 2.188 Å) and between the first-layer Ti and the second-layer C (d_1Ti-2C = 2.031 Å) are in good agreement with the corresponding experimental values of 2.25 Å and 2.14 Å, respectively. We have also identified surface electronic states and provided clear support for previously available photoemission measurements. We have further calculated surface phonon modes at the zone centre and at the zone-edge point X using a linear response scheme based on the ab initio pseudopotential method. Our calculated surface phonon results are in excellent agreement with electron energy loss spectroscopy results.     

Optical anisotropy of the In/Si(1 1 1)(4 × 1)/(8 × 2) nanowire array

Ab initio calculations of the reflectance anisotropy of Si(1 1 1)-In surfaces are presented. A very pronounced optical anisotropy around 2 eV is found that is related to In-chain states. The distortion of the indium chains characteristic for the (4 × 1) → (8 × 2) phase transition results in a splitting of the 2 eV peak, as observed experimentally. The splitting occurs irrespective wether the phase transition occurs according to the trimer or hexamer model.     

Asymmetric adsorption-site of potassium atoms in the (3 × 2)-p2mg structure formed on Cu(0 0 1)

The adsorption of K atoms on Cu(0 0 1) has been studied by low-energy electron diffraction (LEED) at room temperature (RT) and 130 K. At RT, a (3 × 2)-p2mg LEED pattern with single-domain was observed at coverage of 0.33, whereas the orthogonal two-domain was found at 130 K. At 130 K, a c(4 × 2) pattern with orthogonal two-domain was observed at coverage 0.25. Both the (3 × 2)-p2mg and c(4 × 2) structures have been determined by a tensor LEED analysis. It is demonstrated that K atoms are adsorbed on surface fourfold hollow sites in the c(4 × 2), while in the (3 × 2) structure two K atoms in the unit cell are located at an asymmetric site with a glide-reflection-symmetry. The asymmetric site is at near the midpoint between the exact hollow site and bridge-site but slightly close to the hollow site. A rumpling of 0.07 Å in the first Cu layer was confirmed, which might stabilize K atoms at the asymmetric site. Surface structures appearing in a coverage range 0.25-0.33 are discussed in terms of the occupation of the asymmetric site with increase of coverage.     

Formation and characterization of the Cu2O overlayer on Zn-terminated ZnO(0 0 0 1)

Low-energy electron diffraction, X-ray photoelectron spectroscopy and synchrotron-radiation-excited angle-resolved photoelectron spectroscopy have been used to characterize Cu-oxide overlayers on the Zn-terminated ZnO(0 0 0 1) surface. Deposition of Cu on the ZnO(0 0 0 1)-Zn surface results in the formation of Cu clusters with (1 1 1) top terraces. Oxidation of these clusters by annealing at 650 K in O₂ atmosphere (1.3 × 10⁻⁴ Pa) leads to an ordered Cu₂O overlayer with (1 1 1) orientation. Good crystallinity of the Cu₂O(1 1 1) overlayer is proved by energy dispersion of one of Cu₂O valence bands. The Cu₂O(1 1 1) film exhibits a strong p-type semiconducting nature with the valence band maximum (VBM) of 0.1 eV below the Fermi level. The VBM of ZnO at the Cu₂O(1 1 1)/ZnO(0 0 0 1)-Zn interface is estimated to be 2.4 eV, yielding the valence-band offset of 2.3 eV.     

Density functional theory study of selenium adsorption on Fe(1 1 0)

The adsorption of atomic Se on a Fe(1 1 0) surface is examined using the density functional theory (DFT). Selenium is adsorbed in high-symmetry adsorption sites: the -short and long-bridge, and atop sites at 1/2, 1/4, and 1 monolayer (ML) coverages. The long bridge (LB) site is found to be the most stable, followed by the short bridge (SB) and top sites (T). The following overlayer structures were examined, p(2 × 2), c(2 × 2), and p(1 × 1), which correspond to 1/4 ML, 1/2 ML, and 1 ML respectively. Adsorption energy is −5.23 eV at 1/4 ML. Se adsorption results in surface reconstruction, being more extensive for adsorption in the long bridge site at 1/2 ML, with vertical displacements between +8.63 and −6.69% -with regard to the original Fe position-, affecting the 1st and 2nd neighbours. The largest displacement in x or y-directions was determined to be 0.011, 0.030, and 0.021 Å for atop and bridge sites. Comparisons between Se-adsorbed and pure Fe surfaces revealed reductions in the magnetic moments of surface-layer Fe atoms in the vicinity of the Se. At the long bridge site, the presence of Se causes a decrease in the surface Fe d-orbital density of states between 4 and 5 eV below Fermi level. The density of states present a contribution of Se states at −3.1 eV and −12.9 eV. stabilized after adsorption. The Fe-Fe overlap population decrease and a Fe-Se bond are formed at the expense of the metallic bond.     

A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces

The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investigated on the basis of first-principles surface phase diagrams, in which adsorption-desorption behavior is described by comparing the calculated adsorption energy obtained by total-energy electronic-structure calculations with vapor-phase chemical potential estimated by quantum statistical mechanics. The calculated surface phase diagram as functions of temperature and As₂ pressure demonstrates that both Ga and As atoms are adsorbed on the Ga-vacancy site of GaAs(1 1 1)A-(2×2) surface under low As-pressure conditions, resulting in the formation of (2×2) surface with an As adatom. The surface phase diagrams as functions of temperature and Si pressure also reveal that an Si atom can be adsorbed on the (2×2) surface with an As adatom for temperatures less than ∼1160 K and this Si atom can occupy one of As-lattice sites after the incorporation of another As atom, leading to p-type conductivity. In contrast, the (2×2) surface with an As trimer is found to be stabilized under high As-pressure conditions. The surface phase diagram for Si incorporation clarify that an Si atom can be adsorbed at one of Ga-lattice sites of the (2×2) surface with an As trimer for temperatures less than ∼870 K. These calculated results provide one of possible explanations for the formation of p-type and n-type GaAs on GaAs(1 1 1)A surfaces under low and high As-pressure conditions, respectively.     

Carbon monoxide adsorption on the metastable fcc-Co/Cu(1 0 0) surface

The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above E_F and is interpreted as the CO 2π^∗ level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.     

Coverage temperature phase diagram of LEED spot and arced streak intensities for Li on Cu(0 0 1) surface using lattice gas model

It has been established that the arced streaks connecting four spots observed in LEED for a Li system adsorbed on a Cu(0 0 1) surface originate from the Bragg reflection from parallel adatomic lines on a c(2 × 2) lattice site. For example, one streak at about k_y = π/a originates from the parallel atomic lines including two atoms separated at a distance of d_y = 2a, which is the second-neighbor distance in a c(2 × 2) lattice.The c(2 × 2) structure sites consist of two sublattices with y = 2na and y = (2n + 1)a. Here, the difference in the number of adatoms on the two sublattices is the cause of the intensity of the midpoint of the streak, where the differences depend on the coverage of adatoms, Θ.In this study, using a lattice gas model on the substrate lattice with Monte Carlo simulation, we obtain the coverage and temperature dependence of intensities of the spots for the c(2 × 2) structure and the streaks.We found that the intensity of the streaks increase and decrease within the coverage range 0 < Θ < 0.5. That of the spots increases monotonically in this coverage range. These theoretical findings are similar to the experimental results.On the other hand, as temperature is increased, the intensity of the streaks increases and becomes saturated. We found a similar phenomenon using analytical calculation by statistical mechanics. In addition, the intensity of the spots decreased with the second-order transition.     

STM study of Bi-on-Cu(1 0 0)

Scanning tunneling microscopy (STM) has been used to study the various possible structures of adsorbed Bi on the Cu(1 0 0) surface, after equilibration at a temperature of 520 K. All of the structures previously identified by X-ray diffraction (lattice gas, c(2 × 2), c(9√2 × √2)R45°, and p(10 × 10), in order of increasing Bi-coverage) were found to be present on a single sample produced by diffusing Bi onto the Cu(1 0 0) surface from a 3-d source. By investigating the possible coexistence of various pairs of phases, it was demonstrated that the c(2 × 2) phase transforms to the c(9√2 × √2)R45° phase by a first order transition, whereas the transition from c(9√2 × √2)R45° to p(10 × 10) is continuous. In addition, the structure of surface steps was studied as a function of Bi-coverage. The results showed that the presence of Bi changes the nature of the step-step interactions at the Cu(1 0 0) surface from repulsive to attractive. The attractive step-step interactions transform any small deviations from the nominal (1 0 0) orientation of the Cu substrate into (3 1 0) microfacets. When compared with the known equilibrium crystal shape (ECS) of Bi-saturated Cu, the observed microfaceting may imply that the ECS of Cu-Bi alloys is temperature dependent.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

Formamide reactions on rutile TiO2(0 1 1) surface

The reaction of formamide over the (0 1 1) faceted TiO₂(0 0 1) surface has been studied by Temperature Programmed Desorption (TPD) and X-ray Photoelectron Spectroscopy (XPS). Two main reactions were observed: dehydration to HCN and H₂O and decomposition to NH₃ and CO. The dehydration reaction was found to be three to four times larger than the decomposition at all coverages. Each of these reactions is found to occur in two temperature domains which are dependent upon surface coverage. The low temperature pathway (at about 400 K) is largely insensitive to surface coverage while the high temperature pathway (at about 500 K) shifts to lower temperatures with increasing surface coverage. These two temperature pathways may indicate two adsorption modes of formamide: molecular (via an η¹(O) mode of adsorption) and dissociative (via an η²(O,N) mode of adsorption). C1s and N1s XPS scans indicated the presence of multiple species after formamide absorption at 300 K. These occurred at ca. 288.5 eV (-CONH-) and 285 eV (sp³/sp² C) for the C1s and 400 eV-(NH₂), 398 eV (-NH) and 396 eV (N) for the N1s and result from further reaction of formamide with the surface.     

A perturbation theory study of H2 on LiF(0 0 1)

In response to recent helium atom scattering (HAS) results, Monte Carlo (MC) simulations and perturbation theory have been performed for H₂ on LiF(0 0 1). MC simulations predict that H₂ molecules form a series of structures, p(2 × 2), p(8 × 2), p(4 × 2) with coverages Θ = 0.5, 0.625 and 0.75, respectively, that are stable up to 8 K. This is in partial agreement with the HAS results that report c(2 × 2) and c(8 × 2) structures; they agree in terms of coverage and stability, but disagree in terms of symmetry. To reconcile the results of the simulations and experiments, the orientation of the adsorbed H₂ molecules was studied using perturbation theory. These calculations show that the adsorbed H₂ molecules are azimuthally delocalized and that the structures are c-type rather then p-type. The calculations also indicate that p-H₂ and helicoptering o-H₂ prefer cationic sites, while cartwheeling o-H₂ prefers anionic sites.     

Adsorption and reaction of methanethiol on the Ru(0 0 0 1)-p(2 × 2)O surface: A TPD and XPS study

Methanethiol adsorbed on Ru(0 0 0 1)-p(2 × 2)O has been studied by TPD and XPS. The dissociation of methanethiol to methylthiolate and hydrogen at 90 K is evidenced by the observation of hydroxyl and water. The saturation coverage of methylthiolate is ∼0.15 ML, measured by both XPS and TPD. A detailed analysis suggests that only the hcp-hollow sites have been occupied. Upon annealing the surface, water and hydroxyl desorb from the surface at ∼210 K. Methylthiolate decomposes to methyl radical and atomic sulphur via C-S cleavage between 350 and 450 K. Some methyl radicals (0.05 ML) have been transferred to Ru atoms before they decompose to carbon and hydrogen. The rest of methyl radicals desorb as gaseous phase. No evidence for the transfer of methyl radical to surface oxygen has been found.     

Infrared reflection absorption study of carbon monoxide adsorption on Cu(1 0 0)-c(2 × 2)-Pd surfaces formed by palladium vacuum-depositions at various temperatures

Using infrared reflection absorption spectroscopy (IRRAS) and temperature programmed desorption (TPD), we investigated carbon monoxide (CO) adsorption and desorption behaviors on atomic checkerboard structures of Cu and Pd formed by Pd vacuum deposition at various temperatures of Cu(1 0 0). The 0.15-nm-thick Pd deposition onto a clean Cu(1 0 0) surface at room temperature (RT) showed a clear c(2 × 2) low-energy electron diffraction (LEED) pattern, i.e. Cu(1 0 0)-c(2 × 2)-Pd. The RT-CO exposure to the c(2 × 2) surfaces resulted in IRRAS absorption caused by CO adsorbed on the on-top sites of Pd. The LEED patterns of the Pd-deposited Cu(1 0 0) at higher substrate temperatures revealed less-contrasted c(2 × 2) patterns. The IRRAS intensities of the linearly bonded CO bands on 373-K-, 473-K-, and 673-K-deposited c(2 × 2) surfaces are, respectively, 25%, 22%, and 10% less intense than those on the RT-deposited surface, indicating that Pd coverages at the outermost c(2 × 2) surfaces decrease with increasing deposition temperature. In the initial stage of the 90-K-CO exposure to the RT surface, the band attributable to CO bonded to the Pd emerged at 2067 cm⁻¹ and shifted to higher frequencies with increasing CO exposure. At saturation coverage, the band was located at 2093 cm⁻¹. In contrast, two distinct bands around 2090 cm⁻¹ were apparent on the spectrum of the 473-K-deposited surface: the CO saturation spectrum was dominated by an apparent single absorption at 2090 cm⁻¹ for the 673-K-deposited surface. The TPD spectra of the surfaces showed peaks at around 200 and 300 K, which were ascribable respectively to Cu-CO and Pd-CO. Taking into account the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the ordered checkerboard structures.     

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface

In this paper, the InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ−Δ−X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.     

A valence band photoemission study of Pb adsorption on Rh(1 0 0) and Rh(1 1 0)

We have studied the adsorption of Pb on the Rh(1 0 0) and (1 1 0) surfaces by photoemission and low energy electron diffraction (LEED), and tested the chemical properties by adsorption of CO. Pb forms two distinct c(2 × 2) phases on Rh(1 0 0), according to the temperature of the substrate. The phase formed below about 570-620 K, denoted α-c(2 × 2), reduces the coverage of adsorbed CO but does not affect the valence band spectrum of the molecule. The phase formed above this temperature, denoted β-c(2 × 2), also reduces the coverage of adsorbed CO but the valence band spectrum of the adsorbed CO is strongly affected. The two phases are also characterised by a slightly different binding energy of the Pb 5d_5/2 level, 17.54 eV for the α phase and 17.70 for the β phase. The Pb/Rh(1 1 0) surface shows two ordered Pb induced phases, c(2 × 2) and p(3 × 1). CO adsorbs on the first with reduced heat of adsorption and with a valence band spectrum that is strongly altered with respect to CO adsorbed on clean Rh(1 1 0), but does not adsorb on the p(3 × 1) structure at 300 K. We compare the present results with previous results from related systems.     

First principles calculations of the adsorption and diffusion of Y on the Si(0 0 1)-c(4 × 2) surface

We have studied the adsorption and diffusion of yttrium on the Si(0 0 1)-c(4 × 2) surface in the early stages of growth. Our first principles total energy calculations are based on the density functional theory as implemented in the SIESTA code. The exchange and correlation energies are treated within the generalized gradient approximation according to the Perdew, Burke and Ernzerhof parametrization. Our results demonstrate that the most favorable adsorption site is in the trench between two silicon dimer rows, identified as valley-bridge (V). Our studies show that the diffusion of an Y adatom on Si(0 0 1)-c(4 × 2) surface presents an anisotropic behavior. We found two values for the barriers along the valley (0.54 and 1.07 eV) and one of 1.24 eV in the perpendicular direction, showing that diffusion along the valley is more probable. The analysis of the Mulliken overlap populations shows that the bonding between an Y adatom and the surface is partially covalent. Two Y atoms on the surface do not form dimers instead they are adsorbed as adatoms.