Excitonic optical absorption in wurtzite InGaN/GaN quantum wells

Within the framework of the effective-mass and envelope function theory, exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum wells (QWs) are investigated theoretically considering the built-in electric field effects. Numerical results show that the built-in electric field, well width and in composition have obvious influences on exciton states and optical properties in WZ InGaN/GaN QWs. The built-in electric field caused by polarizations leads to a remarkable reduction of the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability in WZ InGaN/GaN QWs with any well width and In composition. In particular, the integrated absorption probability is zero in WZ InGaN/GaN QWs with any In composition and well width L > 4 nm. In addition, the competition effects between quantum confinement and the built-in electric field (between quantum size and the built-in electric field) on exciton states and optical properties have also been investigated.     

Structural transition in cyclooctatetraene adsorbed on Ru(0 0 1) probed by thermal desorption and two-photon photoemission spectroscopy

The adsorption of 1,3,5,7-cyclooctatetraene (COT) on Ru(0 0 1) is studied by temperature-programmed desorption (TPD), work function measurements, as well as time- and angle-resolved two-photon photoemission (2PPE) spectroscopy. The TPD data show that COT films grow at 115 K in a metastable phase when the coverage is increased from the chemisorbed monolayer to the bulk-like molecular multilayer structure. The metastable states desorb at a temperature which is ≈9 K lower than the desorption temperature of the stable multilayer. At 165 ± 2 K, they undergo an irreversible and thermally activated transformation into the stable multilayer phase. This transition is accompanied by a pronounced increase in the total 2PPE yield by more than one order of magnitude as well as the appearance of image potential states. The image states have binding energies of −0.70 eV and −0.24 eV for the n = 1 and n = 2 states, respectively, and a lifetime of 20 ± 5 fs for both states. Their appearance is interpreted as an indication of island formation in the stable multilayer regime. 2PPE spectroscopy of the image potential states provides a sensitive probe of structural transitions in the adsorbate layers.     

Submillimeter-wave spectroscopy of HCO in the excited vibrational states

The pure rotational transitions of HCO⁺ in excited vibrational states located below 5000 cm⁻¹ over the ground state have been investigated with a high-sensitivity frequency/magnetic field double modulation submillimeter-wave spectrometer in the frequency range of 280-810 GHz. The ions were generated in an extended negative glow discharge through a gas mixture of a few millitorrs of H₂ and CO and 12 mTorr of Ar buffer gas. Throughout the experiments, the cell was maintained at liquid nitrogen temperature. In the present study, we have determined accurate molecular constants for the excited vibrational states. Our analysis suggests that there may be a higher order Coriolis interaction between the (0 3 1) and (1 2 0) states. In previous investigations, the Stark effect caused by the electric field present in the discharge plasma was cited as a reason for non-observations of low-J lines in the (02²0) and for the systematic shifts observed for low-J lines in the (01¹0), (02²0), (03¹0), and (04²0) states of HCO⁺ as well as DCO⁺. In the present investigation, some low-J lines in the (02²0) and (04²0) states have been observed in emission. Furthermore, J = 8-7, J = 9-8 lines in (03^1e1) were detected in emission. This finding indicates that missing low-J lines for the Δ sublevel obtained in the past is not due to the Stark effect but due to small population differences in those levels.     

Growth of pentacene on Ag(1 1 1) surface: A NEXAFS study

Thin films of pentacene (C₂₂H₁₄) have become widely used in the field of organic electronics. Here films of C₂₂H₁₄ of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.XAS spectra at the C K-edge were collected as a function of the direction of the electric field at the surface. The different features of the spectra were assigned to resonances related to the various molecular unoccupied states by the comparison with the absorption coefficient of the pentacene gas phase. The transitions involving antibonding π states show a pronounced angular dependence for all the measured coverages, from submonolayer to multilayer. The spectra analysis indicates a nearly planar chemisorption of the first pentacene layer with a tilt angle of 10°.     

Ab initio study of atomic geometry and electronic states of GaSb(0 0 1) reconstructions

We have employed the pseudopotential method and the density functional scheme to study the atomic geometry and electronic states of the GaSb(0 0 1) surface such as (1 × 3), c(2 × 6) and (4 × 3) reconstructions. It is found that both of (1 × 3) and c(2 × 6) reconstructions are characterised by metallic band structures, and thus violate the so-called electron counting rule, one of the main building principles of the stability of compound semiconductor surfaces. We establish that the stability of these reconstructions results from significant elastic deformation in the top atomic layers of the surface, a process which overcomes the penality incurred by the violation of the electron counting rule. The atomic geometry and electronic states for the two reconstructions are compared and contrasted with each other. The α and β phases of the (4 × 3) reconstruction also show large atomic relaxations but are semiconducting and obey the electron counting rule.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

High resolution Fourier transform spectrum of HDO in the 7500-8200 cm region: revisited

The HDO absorption FT spectrum is recorded and analyzed in the 7500-8200 cm⁻¹ spectral region. The high accuracy ab initio calculation of Schwenke and Partridge was successfully applied for spectrum assignment that resulted in derivation of 508 precise rovibrational energy levels for the (3 0 0), (0 3 1), (1 1 1), (0 6 0), (2 2 0), and (0 0 2) states, with 295 of them being reported for the first time. In particular, eight new energy levels, including the band center at 7914.3170 cm⁻¹, were derived for the highly excited bending (0 6 0) state from transitions borrowing their intensities through local high-order resonance coupling with the (3 0 0) and (0 3 1) states.     

Measurements of positions, strengths and self-broadened widths of H2O from 2900 to 8000 cm: line strength analysis of the 2nd triad bands

High-resolution spectra of H₂O were recorded with a Fourier-transform spectrometer covering H₂O transitions from 2900 to 8000 cm⁻¹. Over 13,000 absorptions were measured to determine line positions, strengths and self-broadened half-width coefficients. The H₂ ¹⁶O line strengths of the (0 3 0)-(0 1 0), (1 1 0)-(0 1 0), (0 1 1)-(0 1 0) and (0 3 0)-(0 0 0), (1 1 0)-(0 0 0), (0 1 1)-(0 0 0) bands were fitted to a quantum mechanical model which involves the interactions between the (0 3 0), (1 1 0), and (0 1 1) vibrational states. Also fitted were experimental strengths of the hot bands; (1 2 0)-(0 1 0) and (0 2 1)-(0 1 0). The model includes 14 dipole matrix elements for B- and A-type transitions. The measured line positions were used along with hot water emission measurements (for the (0 3 0), (0 4 0), and (0 5 0) states of H₂ ¹⁶O) in an analysis to obtain high-accuracy energy level values in the (0 3 0), (1 1 0), (0 1 1), (0 4 0), (1 2 0), (0 2 1), (2 0 0), (1 0 1), (0 0 2), and (0 5 0) vibrational states of H₂ ¹⁶O and the (1 1 0) and (0 1 1) states of H₂ ¹⁷O. Also included were measurements and analysis of self-broadened half-widths for over 4700 absorptions between 4405 and 7729 cm⁻¹. The results from this investigation provide new information for the noted H₂ ¹⁷O bands and present a more accurate representation of the measured H₂ ¹⁶O bands.     

CuPc molecules adsorbed on Au(1 1 0)-(1 × 2): growth morphology and evolution of valence band states

We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.     

Ab initio calculations of surface structure and electronic properties caused by adsorption of Ca atoms on a Si(1 1 0) surface

The adsorption of Ca metals onto a Si(1 1 0) surface has been theoretically investigated by first-principle total-energy calculations. We employed a local density approximation of the density functional theory as well as a pseudopotential theory to study the atomic and electronic properties of the Ca/Si(1 1 0) structure. The (1×1) and (2×1) surface structures were considered for Ca coverages of 0.5 and 0.25 ML, respectively. It is found that the (1×1) phase is not expected to occur even for rich Ca regime. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The most stable structure of Ca/Si(1 1 0)-(2×1) surface produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. We have observed one filled and two empty surface states in the gap region. These empty surface states originated from the uppermost Si dangling bond states and the Ca 4s states. Furthermore, the Ca-Si bonds have an ionic nature with almost complete charge transfer from Ca to the surface Si atoms. The structural parameters of the ground state atomic configuration are detailed and compared with the available results of metal-adsorbed Si(1 1 0) surface, Ca/Si(0 0 1), and Ca/Si(1 1 1) structures.     

Investigation of hydrogen interaction with the Si(1 1 1)-7 × 7 surface by STM with Bi/W tips

The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes (CH) was investigated. The reactivity of CH sites was found to be ∼2 times less than that of R and A sites. At temperatures higher than RT, hydrogen atoms rearrange among A, R, and CH sites, with increased occupation of R sites (T <  300 °C). Further temperature increase leads to hydrogen desorption, where its surface diffusion plays an active role. We discuss one of the possible desorption mechanisms, with the corner holes surrounded by a high potential barrier. Hydrogen atoms have a higher probability to overcome the desorption barrier rather than diffuse either into or out of the corner hole. The desorption temperature of hydrogen from CH, R, and A sites is about the same, equal to ∼500 °C. Also it is shown that hydrogen adsorption on the CH site causes slight electric charge redistribution over neighbouring adatoms, namely, increases the occupation of electronic states on A sites in the unfaulted halves of the Si(1 1 1)-7 × 7 unit cell. Based on these findings, the indirect method of investigation with conventional W tips was suggested for adsorbate interaction with CH sites.     

The permanent electric dipole moment of holmium monoxide, HoO

The high resolution molecular beam laser-induced fluorescence (LIF) spectrum of the (0, 0) band of the [17.6]7.5-X₁8.5 system of holmium monoxide, HoO, has been recorded field free and in the presence of a variable static electric field. The rotational constant, B₀, and magnetic hyperfine structure constant, h, for the v = 0 levels of the [17.6]7.5 and X₁8.5 states were obtained by assigning and fitting the field-free spectral features. The Stark shifts and splittings in the LIF spectra were analyzed to produce values for the magnitude of the permanent electric dipole moments, |μ|, of 3.96(6) and 4.80(5) D for [17.6]7.5, v = 0 and X₁8.5, v = 0, respectively.     

A resonant photoemission study of the Ce and Ce-oxide/Pd(1 1 1) interfaces

We have investigated the Ce 4f electronic states in the Ce/Pd(1 1 1) and Ce-oxide/Pd(1 1 1) systems, using resonant photoemission (Ce 4d → 4f transitions), and XPS to understand Pd-Ce interactions in ultra thin layers of cerium and ceria deposited on Pd(1 1 1). Cerium deposited on Pd(1 1 1) at room temperature forms surface Ce-Pd alloys with Ce rich character, while a Pd rich Ce-Pd alloy is formed by heating to 700 °C. A modification of the chemical state of Ce can also be seen after oxygen exposure. RPES provides evidence that Ce-oxide layers deposited on Pd(1 1 1) have a CeO₂ (Ce⁴⁺) character, however a net contribution of the Ce³⁺ states is also revealed. The Ce³⁺ states have surface character and are accompanied by oxygen vacancies. Heating to 600 °C causes Ce-oxide reduction. A significant shift of Pd 4d-derived states, induced by Pd 4d and Ce 4f hybridization, was observed. The resonant features in the valence band corresponding to Ce⁴⁺, Ce³⁺ and Ce⁰ states have been investigated for various Pd−Ce(CeO_x) coverages.     

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Considering the strong built-in electric field (BEF), dielectric-constant mismatch and 3D confinement of the electron and hole, the exciton states and interband optical transitions in [0 0 0 1]-oriented Ga-rich wurtzite In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated theoretically using a variational approach under the effective mass approximation. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the radiative decay time. Our calculations show that the radiative decay time of the redshifted transitions is large and increases almost exponentially when the QD height increases, which is in good agreement with the previous experimental and theoretical results.     

Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br-Si(1 0 0)-(2 × 1)

The desorption of Br adatoms from Br-saturated Si(1 0 0)-(2 × 1) was studied with scanning tunneling microscopy as a function of dopant type, dopant concentration, and temperature for 620-775 K. Analysis yields the activation energies and prefactors for desorption, and the former correspond to the energy separation between the Fermi level and Si-Br antibonding states. Thus, electron capture in long-lived states results in Br expulsion via a Franck-Condon transition. Analysis of the prefactors reveals that optical phonons provide the energy needed for the electronic excitation. These results show that desorption induced by an electronic transition can occur in closed system without external stimulus, and they indicate that thermally-excited charge carriers may play a general role in surface reactions.     

An XPS study and electrical properties of Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) structures according to the substrate temperature of the PbO buffer layer

PbO and PZT thin films were deposited on the p-type (1 0 0) Si substrate by the rf magnetron sputtering method with PbO and Pb_1.1Zr_0.53Ti_0.47O₃ targets for the application of the metal-ferroelectric-insulator-semiconductor (MFIS) structure. The MFIS structures with the PbO buffer layer show the good electric properties including a high memory window and a low leakage current density. The maximum value of the memory window is 2.0 V under the applied voltage of 9 V for the Pt/PZT (200 nm, 400 °C)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300 °C. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the substrate temperature of PbO affects the chemical states of the interface between the PbO buffer layer and Si substrate, which results in the inter-diffusion of Pb and the formation of the intermediate phases (PbSiO₃). And the existence of the undesired SiO₂ layer, which is the low dielectric layer, was confirmed at the surface region of the Si substrate by the XPS depth profile analysis.     

Searching for extremal PPT entangled states

We study extremality in various sets of states that have positive partial transposes. One of the tools we use for this purpose is the recently formulated criterion allowing to judge if a given state is extremal in the set of PPT states. First we investigate qubit-ququart states and show that the only candidates for extremal PPT entangled states (PPTES) have ranks of the state and its partial transposition (5, 5) or (5, 6) (equivalently (6, 5)). Then, examples of extremal states of (5, 5) type and the so-called edge states of type (5, 6) are provided. We also make an attempt to explore the set of PPT states with ranks (5, 6). Finally, we discuss what are the possible configurations of ranks of density matrices and their respective partial transposition in general three-qubit and four-qubit symmetric states for which there may exist extremal entangled PPT states. For instance in the first case we show that the only possibilities are (4, 4, 4) and (4, 4, 5).     

Quantum states of hydrogen (H, D, T) atoms on Cu(1 0 0) and (1 1 0) surfaces

We investigate the quantum mechanical behavior of adsorbed hydrogen (H, D, T) on Cu(1 0 0) and (1 1 0) surfaces. We construct potential energy surfaces (PESs) for the motion of the hydrogen H atom on Cu(1 0 0) and (1 1 0) surfaces within the framework of density functional theory. The potential energy takes a minimum value on the hollow site of Cu(1 0 0) and on the short bridge site of Cu(1 1 0). Moreover, we calculate the quantum states of hydrogen atom motion on these calculated PESs. The ground state wave function of the hydrogen atom motion is strongly localized around the hollow site on the Cu(1 0 0) surface. On the other hand, the ground state wave function of the hydrogen atom motion on Cu(1 1 0) is distributed from the short bridge site to two neighboring pseudo-threefold sites. We finally show isotope effects on the quantum states of the motion of hydrogen on both surfaces.     

The eight first vibrational states of the water molecule: measurements and analysis

In this work the spectrum of the water molecule has been the subject of extensive experimental and theoretical investigations. More than 1500 transitions have been assigned in a far infrared emission spectrum recorded in the 50-500 cm⁻¹ region and experimental rotational energies have been obtained for the second triad of interacting states, (0 3 0), (1 1 0), and (0 1 1), up to J=10 using flame spectroscopy. These new data along with a large data set of already published experimental rotational energies, high-resolution infrared transitions, and microwave lines, involving the eight first vibrational states, have been analyzed using the theoretical formalism developed for water in a previous paper (J. Mol. Spectrosc. 206 (2001) 83), which accounts for the anomalous centrifugal distortion as well as for the Fermi- and Coriolis-type couplings.