High stability white organic light-emitting diode fabricated with the deposition of solvent premixed sources

This paper presents the characteristics of high-stability white organic light-emitting diodes (WOLEDs). For the preparation of WOLEDs with a single-emission layer (EML), the source materials of MADN, BCzVB, C6, and DCJTB were solvent premixed before evaporation. The structure of the WOLEDs was ITO/NPB (50 nm)/EML (40 nm)/Bphen (30 nm)/Al (200 nm). The materials that comprised the EML for dual- and tri-wavelength WOLEDs were MADN:BCzVB:DCJTB and MADN:BCzVB:C6:DCJTB, respectively. The energy transfer between the host and the dyes influenced the luminance efficiency and chromaticity coordinates of the devices. The maximum current efficiencies were 6.34 and 6.38 cd/A for the dual- and tri-wavelength WOLEDs, respectively. The efficiency of the WOLEDs was enhanced by C6 doping, although a slight variation in the chromaticity coordinates was observed, which was resulted from variations in the applied voltage.     

Optical properties of white organic light-emitting devices fabricated with three primary-color emitters by using organic molecular-beam deposition

White organic light-emitting devices (WOLEDs) with Mg:Ag/Alq₃/Alq₃:DCJTB/Alq₃/DPVBi/α-NPD/ITO and Mg:Ag/Alq₃/DPVBi:DCJTB/Alq₃/DPVBi/α-NPD/ITO structures were fabricated with three primary-color emitters of red, green, and blue by using organic molecular-beam deposition. Electroluminescence spectra showed that the dominant white peak for the WOLEDs fabricated with host red-luminescence Alq₃ and DPVBi layers did not change regardless of variations in the current. The Commission Inernationale de l'Eclairage (CIE) chromaticity coordinates for the two WOLEDs were stable, and the WOLEDs at 40 mA/cm² with luminances of 690 and 710 cd/cm² showed an optimum white CIE chromaticity of (0.33, 0.33). While the luminance yield of the WOLED fabricated with a host red-luminescent Alq₃ emitting layer below 30 mA/cm³ was larger than that of the WOLED fabricated with a DPVBi layer, above 30 mA/cm², the luminance yield of the WOLED fabricated with the DPVBi layer was higher than that of the WOLED with the Alq₃ layer and became more stable with increasing current density. These results indicate that WOLEDs fabricated with a host red-luminescence DPVBi layer without any quenching behavior hold promise for potential applications in backlight sources in full-color displays.     

Enhanced luminance of white organic light-emitting diode with yellow nanophosphors-embedded blue polymer emitting layer

White organic light-emitting device was achieved through an incorporation of yellow YAG nanophosphors into blue polyfluorene emitting layer: electrode/YAG@polyfluorene/hole-transport/injection layers/ITO glass. The brightness of the proposed device (230 cd/m² at 30 V) was enhanced by a factor of about two in comparison with that of phosphor-free reference device. It is attributed to the increased local electric field caused by bumps of nanophophors on the emitting layer. With increase of voltage, the blue-green emission decreased whereas the yellow emission increased. It is due to the effective energy transfer from the blue-green to the yellow bands.     

Solution-processed white organic light-emitting devices based on small-molecule materials

We investigated solution-processed films of 4,4′-bis(2,2-diphenylvinyl)-1,1′-bibenyl (DPVBi) and its blends with N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4′-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m², a maximum luminance of 22500 cd/m², and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.     

Effects of different buffer layers on the electro-luminescence performances in white organic light-emitting diodes

The effects of different hole injection materials as the buffer layer on the electro-luminescence (EL) performances of white organic light-emitting diodes (WOLEDs) are investigated in detail. It is found that the EL performances and electric properties were strongly dependent on the structure of the used hole injection materials with different thicknesses, which directly affected the injection and transport properties in devices, and thus the EL efficiency and lifetime. It can be seen that a hybrid buffer layer of 5 nm aluminum fluoride (AlF₃)/15 nm 4,4′,4″-tris(3-methylphenylphenylamino) (m-MTDATA) as the hole injection buffer layer shows the best EL performances in efficiency and lifetime, showing a promising hole injection material in WOLEDs. The mechanisms behind the enhanced performance of the hybrid buffer layer in WOLEDs are discussed based on X-ray photoelectron spectroscopy (XPS) measurement.     

Reduction of driving voltage in organic light-emitting diodes with molybdenum trioxide in CuPc/NPB interface

A novel structure of organic light-emitting diode was fabricated by inserting a molybdenum trioxide (MoO₃) layer into the interface of hole injection layer copper phthalocyanine (CuPc) and hole transport layer N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB). It has the configuration of ITO/CuPc(10 nm)/MoO₃(3 nm)/NPB(30 nm)/ tris-(8-hydroxyquinoline) aluminum (Alq₃)(60 nm)/LiF(0.5 nm)/Al. The current density-voltage-luminance (J-V-L) performances show that this structure is beneficial to the reduction of driving voltage and the enhancement of luminance. The highest luminance increased by more than 40% compared to the device without hole injection layer. And the driving voltage was decreased obviously. The improvement is ascribed to the step barrier theory, which comes from the tunnel theory. The power efficiency was also enhanced with this novel device structure. Finally, “hole-only” devices were fabricated to verify the enhancement of hole injection and transport properties of this structure.     

Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene

Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq₃ (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm².     

Ca/Ag bilayer cathode for transparent white organic light-emitting devices

We have demonstrated that the compositional modification of the Ca/Ag films is principally responsible for a high transmittance (over 70% in the visible range) and low sheet resistance (10-12 Ω/sq). X-ray photoelectron spectroscopy (XPS) sputter depth profiling of Ca/Ag structure reveals the presence of Ca(OH)₂ and Ca metal. A chemical model of the Ca/Ag cathode is proposed. Using transparent ITO anode and Ca (10 nm)/Ag (10 nm) cathode, efficient white organic light-emitting devices (WOLEDs) emitting from both sides have been fabricated. Brightness of 3813 cd/m² and Commission Internationale de l’Eclairage (CIE) coordinates (0.36, 0.34) at 10 V through ITO anode and values of 1216 cd/m² and (0.33, 0.30) through Ca/Ag cathode are reported. A low turn-on voltage of 5.5 V is measured.     

Control of device performances of phosphorescent white organic light-emitting diodes by managing charge transport properties of host materials

Interlayer-free phosphorescent white organic light-emitting diodes (PHWOLEDs) with a mixed-host emitting structure in red emitting layer were developed and device performances were investigated according to the host composition in the red emitting layer. Device performances could be effectively managed by a simple change of host materials in the red emitting layer. A high quantum efficiency was obtained in PHWOLEDs with electron transport-type host in the red emitting layer and red emission was strong in PHWOLEDs with mixed-host in the red emitting layer. In addition, stable color performances were obtained in electron transport-type host rich devices.     

Non-doped phosphorescent white organic light-emitting devices with a quadruple-quantum-well structure

Non-doped white organic light-emitting devices (WOLEDs) with a quadruple-quantum-well structure were fabricated. An alternate layer of ultrathin blue and yellow iridium complexes was employed as the potential well layer, while potential barrier layers (PBLs) were chosen to be 2,2',2''-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) or N,N'-dicarbazolyl-3,5-benzene (mCP) combined TPBi. On adjusting the PBLs for device performance comparison, the results showed that the device with all-TPBi PBLs exhibited a yellow emission with the color coordinates of (0.50,0.47) at a luminance of 1000 cd/m², while stable white emission with the color coordinates of (0.36,0.44) was observed in the device using mCP combined TPBi as the PBLs. Meanwhile, for the WOLED, with a reduced efficiency roll-off, a maximum luminance, luminous efficiency, and external quantum efficiency of 12,610 cd/m², 10.2 cd/A, and 4.4%, respectively, were achieved. The performance improvement by the introduction of mCP PBL was ascribed to the well confined exciton and the reduced exciton quenching effect in the multiple emission regions.     

Characterization of two-emitter WOLED with no additional blocking layer

In this paper, white organic light emitting diodes (WOLEDs) utilizing two primary-color emitters with no additional blocking layer are fabricated. With a structure of ITO/2TNATA (20 nm)/NPB (20 nm)/NPB: rubrene (2%) (10 nm)/ADN (30 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm), a white light with CIE coordinates of (0.344, 0.372) is generated at a current density of 30 mA/cm² and the electroluminescence (EL) spectra consist of two broad bands around 456 nm (ADN) and 556 nm (NPB:rubrene). The device shows the low turn-on voltage and bright white emission with a power efficiency of 2.3 lm/W at a luminance of 100 cd/m². Through control of the location of the recombination zone and energy transfer, a stable white light emission is achieved. The maximum color shift is less than 0.02 units on the 1931 CIE x,y chromaticity diagram. Given the spectral power distribution of WOLED, the parameters of a light source (chromaticity coordinate, CCT, CRI, and the luminous efficacy) can be calculated. A MATLAB program for this purpose is developed in this paper. Based on this, the design of WOLED for an illumination and display system using a white emitter with color filter arrays is discussed.     

Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency based on buffer layer MoO3

Blue organic light-emitting devices based on wide bandgap host material, 2-(t-butyl)-9, 10-di-(2-naphthyl) anthracene (TBADN), blue fluorescent styrylamine dopant, p-bis(p-N,N-diphenyl-amino-styryl)benzene (DSA-Ph) have been realized by using molybdenum oxide (MoO₃) as a buffer layer and 4,7-diphenyl-1,10-phenanthroline (BPhen) as the ETL. The typical device structure used was glass substrate/ITO/MoO₃ (5 nm)/NPB (30 nm)/[TBADN: DSA-Ph (3 wt%)](35 nm)/BPhen (12 nm)/LiF (0.8 nm)/Al (100 nm). It was found that the MoO₃∥BPhen-based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.4 V and 4.7 Lm/W, respectively, which is independently reduced 46%, and improved 74% compared with those the m-MTDATA∥Alq₃ is based on, respectively. The J-V curves of ‘hole-only’ devices reveal that a small hole injection barrier between MoO₃∥NPB leads to a strong hole injection, resulting low driving voltage and high power efficiency. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.     

空穴阻挡中间层的加入对WOLEDs光谱稳定性的提高

制备了多层结构合成的白光有机电致发光器件(WOLEDs),通过在发光层中加入一层空穴阻挡层TPBi来提高器件的光谱稳定性。当TPBi厚度为2.5 nm时,在电压由8 V升高到12 V的过程中,CIE色坐标的变化量为(0.031,0.006)。器件的电流效率为24.7 cd/A,外部量子效率最大为8.2%。相对于没有加入中间层的器件,8 V电压下的色坐标由(0.435,0.472)变为(0.333,0.439)。实验结果表明,在发光层中添加中间层可以改变器件发光的色坐标并提升光谱的稳定性。     

High power efficiency in single layer blue phosphorescent organic light-emitting diodes

High efficiency single layer blue phosphorescent organic light-emitting diodes (PHOLEDs) without any charge transport layer were developed. A mixed host of spirobifluorene based phosphine oxide (SPPO13) and 1, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) was used as the host in the emitting layer. A high maximum external quantum efficiency of 15.8% and a quantum efficiency of 8.6% at 1000 cd/m² were achieved in the single-layer blue PHOLEDs without any charge transport layer. The maximum power efficiency and power efficiency at 1000 cd/m² were 31.4 and 16.9 lm/W, respectively.     

Improved performances of red organic light-emitting devices by co-doping a rubrene derivative and DCJTB into tris-(8-hydroxyquinoline) aluminum host

Performances of red organic light-emitting device were improved by co-doping 2-formyl-5,6,11,12-tetraphenylnaphthacene (2FRb) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl)-4H-pyran (DCJTB) in tris-(8-hydroxyquinoline) aluminum (Alq₃) host as the emitting layer. The device with 1 wt% DCJTB and 2.4 w% 2FRb in Alq₃ host gave a saturated red emission with CIE chromaticity coordinates of (0.65, 0.35) and a maximum current efficiency as high as 6.45 cd/A, which are 2 and 2.4 fold larger than that of the device with 1 wt% DCJTB (3.28 cd/A) in Alq₃ host and the device with 2.4 wt% 2FRb (2.72 cd/A) in Alq₃ host at the current density of 20 mA/cm², respectively. The improvement could be attributed to the effective utilization of host energy by both energy transfer and trapping in the electroluminescence process and the depression of concentration quenching between the dopants molecules.     

High performance polymer light-emitting diodes doped with a novel phosphorescent iridium complex

High performance polymer light-emitting diodes (PLEDs) based on a phosphor of noble metal complex bis(1,2-dipheny1-1H-benzoimidazole) iridium (acetylacetonate) [(pbi)₂Ir(acac)] doped in poly(N-vinylcarbazole) (PVK) host with various concentration were demonstrated. The photoluminescence (PL) and electroluminescence (EL) spectra of the PLEDs exhibited an emission intensity decrease of PVK and a gradually enhanced feature of (pbi)₂Ir(acac) with increased doping concentration. The device with a 5 wt% (pbi)₂Ir(acac) doped PVK system showed a high power efficiency of 3.84 lm/W and a luminance of 26,006 cd/m². The results indicated that both energy transfer and charge trapping have a significant influence on the performance of PLEDs. The devices have a broadened EL spectrum of full-width at half-maximum (FWHM) more than 100 nm, which can be realized for WOLEDs.     

基于自动跟踪LED驱动电压控制电路的创新设计

LED发光二极管在发光时约有80%以上的功率转化成了热能,导致LED发光二极管的PN结温度过高,这是影响LED发光二极管的发光效率与照明功能的主要因素。本文针对上述问题,结合现实情况,设计了一种自动跟踪LED驱动电压的控制电路,从串联稳流单元采样一个电压信号,与本控制电路中的基准电压相比较,产生一个控制信号,去控制所述串联稳流单元前级的开关稳压电源,使它的输出电压随LED灯的工作电压的变化而变化,不增加调整管的功耗。避免了常见的恒压驱动亮度变化大的缺陷,从而大幅度提高LED发光二极管的工作效率,该控制电路结构简单、成本低、损耗小与可靠性高。     

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94×10¹⁶ cm⁻³ is composed of nitrogen-doped ZnO using NH₃ as the doping source with subsequent annealing in N₂O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15×10¹⁸ cm⁻³ is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra.     

Enhanced quantum efficiency in polymer electroluminescence devices by inserting an ultrathin PMMA layer

We report an increase of electroluminescence (EL) efficiency by about two times for poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) based polymer light-emitting diodes (PLED) while employing an ultrathin layer of poly(methyl methacrylate) (PMMA) between a hole injection layer, polyethylenedioxythiophenne:polystyrenesulfonate (PEDOT:PSS) and an emitting layer, MEH-PPV. The peak power efficiency of the control device (ITO/MEH-PPV/LiF/Al) was 0.42 lm/W with a current efficiency of 0.66 cd/A. The device with the optimized thickness of PMMA interface layer shows the highest power efficiency of 1.15 lm/W at a current efficiency exceeding 1.83 cd/A. The significant improvement in the device performance is attributed to the decrease of holes injection and the promotion of electrons injection, which cause the balance of the carriers within the emitting layer.     

Combined host–guest doping and host-free systems for high-efficiency white organic light-emitting devices

Highly efficient white organic light-emitting devices (WOLEDs) with a four-layer structure were realized by utilizing phosphorescent blue and yellow emitters. The key concept of device construction is to combine host–guest doping system of the blue emitting layer (EML) and the host-free system of yellow EML. Two kinds of WOLEDs incorporated with distinct host materials, namely N,N'-dicarbazolyl-3,5-benzene (mCP) and p-bis(triphenylsilyly)benzene (UGH2), were fabricated. Without using light out-coupling technology, a maximum current efficiency (η_C) of 58.8 cd/A and a maximum external quantum efficiency (η_EQE) of 18.77% were obtained for the mCP-based WOLED; while a maximum η_C of 65.3 cd/A and a maximum η_EQE of 19.04% were achieved for the UGH2-based WOLED. Meanwhile, both WOLEDs presented higher performance than that of conventionally full-doping WOLEDs. Furthermore, systematic studies of the high-efficiency WOLEDs were progressed.