Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

ZnO-Fe3O4 composite prepared by sol-gel method with H2 deoxidation

Fe doped ZnO powder samples (Fe/Zn=0.05 and 0.1) were prepared by sol-gel method with H₂ deoxidation at 450 ^°C for several hours or just heated in air at the same temperature. It was showed by vibrating sample magnetometer (VSM) that samples heat treated in H₂ could show strong ferromagnetism at room temperature while samples treated in air only show very weak magnetism. XRD using Co kα X-ray revealed that the samples heated in H₂ were not pure phase but like a granular system and the magnetism mainly results from Fe₃O₄ in samples while samples heated in air showed pure ZnO phase. Our work indicated that H₂ deoxidation treatment may be an effective technique to fabricate such magnetic semiconductor-like materials with Curie temperature higher than room temperature.     

Magnetic properties of doped ZnO prepared by different synthetic routes

We have studied the magnetic properties of Zn_0.96M_0.04O (M=Mn, Fe, Co) compounds prepared using several routes. The low temperature ceramic synthesis gave multiphasic samples and show ferromagnetic behavior. Single phases can be obtained by heating at higher temperatures (∼900–1100 °C). The use of very low oxygen pressure also favours the preparation of single-phases. We were also successful in preparing single-phase samples at very low temperature (∼400 °C) by using a sol-gel method. All of the samples without noticeable secondary phases in the X-ray patterns behave as conventional paramagnets. This is true even for the samples with very low grain size. Samples exhibiting secondary phases reveal spontaneous magnetization even at room temperature in some cases. Our results strongly support that ferromagnetism at room temperature is always due to the presence of secondary phases and not to the doping of ZnO.     

Cu掺杂LaMn1－xCuxO3体系的磁转变和导电行为研究

系统研究了LaMn_1-xCu_xO₃(x=0.05，0.10，0.20，0.30，0.40)体系的磁转变和导电行为.结果表明，在LaMnO₃反铁磁母体中掺杂极少量的Cu(x=0.05)使该体系在157K左右出现强的铁磁转变，随着Cu掺杂浓度的增加，居里温度逐渐降低，而铁磁性则是先增强后减弱.与磁特性相对应，样品的电阻率随着Cu掺杂浓度的增加表现出先减小后增大的特征，并且在整个测量温区内始终呈现绝缘体型导电行为——从顺磁绝 关键词： 1-xCu_xO₃')" href="#">LaMn_1-xCu_xO₃ 导电行为 磁特性     

退火氛围对掺杂ZnO薄膜磁性的影响

采用直流磁控反应共溅法制备了非磁性元素Al和磁性元素Co掺杂的ZnO薄膜, 样品原位真空退火后再空气退火处理. 利用X射线衍射仪(XRD) 和物理性能测量仪(PPMS) 对薄膜的结构和磁性进行了表征. XRD和PPMS结果表明, 不同的退火氛围对掺杂薄膜的结构和磁性有着很大的影响. 真空退火的Al掺杂ZnO薄膜没有观察到铁磁性, 而空气退火的样品却显示出明显的室温铁磁性, 铁磁性的来源与空气退火后导致Al和ZnO基体间电荷转移增强有关. 而对于Co掺杂ZnO薄膜, 真空退火后再空气退火, 室温铁磁性明显减弱. 其磁性变化与Co离子和ZnO基体间电荷转移导致磁性增强和间隙Co原子被氧化导致磁性减弱有关.     

Local structures of Mn in dilute magnetic semiconductor ZnMnO

The local structures of Mn atoms in (Zn, Mn)O have been investigated by extended x-ray absorption fine structure (EXAFS). For samples with lower Mn concentrations (<11%), EXAFS results show that the majority of Mn atoms are incorporated at Zn substitutional sites. Ferromagnetic behavior has been observed in those ZnMnO samples. It is the direct evidence to suppose that the ferromagnetism in (Zn, Mn)O is not due to Mn-related secondary phases but is intrinsic. When the Mn concentration is increased to 20% or higher, the EXAFS simulation shows the formation of MnO secondary phases and the films show a change from ferromagnetic (FM) to antiferromagnetic (AFM) state. We suggest that Mn-related secondary phases might be responsible for the transformation from FM to AFM state.     

Magnetic properties of co-doped SnO2 diluted magnetic semiconductors

Polycrystalline samples of Sn_1−xCo_xO₂ are prepared for x=0.02, 0.05 and 0.10. They all exhibit room temperature ferromagnetism with decrease in saturation magnetization with increase in doping. The magnetization data recorded at 85 K, 295 K and 400 K for x ≥ 0.05 could be analyzed in terms of bound magnetic polaron model and the typical polaron concentration at room temperature is found to be in the order of 10²¹ per m⁻³.     

Structural and magnetic studies on transition metal (Mn, Co) doped ZnO nanoparticles

We report on the structural and magnetic properties of the nanocrystalline samples of Zn_1−x(TM)_xO (TM=Mn, Co and x=0.02, 0.05, 0.10) synthesized by chemical vapor deposition (CVD) method using different carrier gases i.e., Argon (Ar), Oxygen (O₂) and Nitrogen (N₂). X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies reveal wurtzite structure of pure ZnO in all the samples and particle sizes in the range of 15-40 nm. No evidence of any secondary phases having room temperature ferromagnetic behavior has been observed through XRD and TEM studies. Magnetic measurements reveal presence of mixed magnetic phases in the samples, which may be the reason for the low saturation magnetization in the nanoparticles.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Co+离子注入单晶TiO2铁磁性来源与微结构研究

在室温下,将能量为80 keV, 注量分别为1×1016和1×1017ions/cm2的Co+离子注入到10 mm×10 mm×0.5 mm的单晶TiO₂样品。在氮气保护下, Co+离子注量为1×1017 ions/cm2时样品在温度为900 ℃的条件下退火30 min。 利用超导量子干涉仪 （SQUID）测量样品磁性, 并应用X射线衍射（XRD）和扩展边X射线吸收精细结构谱（EXAFS）研究Co+离子注入后样品的微观结构。 样品磁性测量结果表明:Co+离子注入后的样品具有室温铁磁性, 并且其饱和磁化强度的大小与Co+离子注量及样品是否经退火处理有关。 EXAFS研究表明: Co元素在Co+离子注量为1×1017ions/cm2的样品中主要以团簇形式存在;样品经退火处理后, Co团簇消失, 并发现Co部分替代TiO₂单晶中的Ti。Co+离子注入后, 在样品中形成Co团簇与否受离子注量的影响。 阐述了样品微观结构与铁磁性来源之间的关系。 At room temperature, monocrystalline plates of rutile (TiO₂) were implanted with cobalt ions of an energy of 80 keV to fluences of 1×1016 and 1×1017 ions/cm2 respectively . The 1×1017 ions/cm2 Co implanted samples were annealed in nitrogen at 900 ℃ for 30 min. The magnetic properties of Co implanted samples were measured with a superconducting quantum interference device magnetometer (SQUID) at room temperature. Furthermore, the X ray diffraction (XRD) and Extended X ray Absorption Fine Structure (EXAFS) were applied to investigate the structural and compositional properties of Co implanted samples. The magnetic measurements of samples showed that the size of the saturation magnetization of the Co implanted samples were related to the fluence of ions, and the saturation magnetization of the sample after annealed decreased significantly. The EXAFS measurements showed the presence of cobalt metallic clusters in the sample implanted to ion fluence of 1×1017 ions/cm2. The Co metallic clusters disappeared in the sample after annealed, and resulted in the oxidized Co, which is presumed to substitute into the Ti site. The formation of Co clusters or not was determined by the ion fluence. The relation between ferromagnetic behavior and microscopic structure of the Co implanted samples is discussed.     

Influence of the Magnetic Moment on the Atomic Distance in Amorphous Ce_xRu_(100-x)

We perform the extended x-ray absorption fine structure(EXAFS) measurement to investigate the local structure of amorphous alloys Ce_xRu__(100-x)(x = 9,43 and 80).The interatomic distances of the nearest Ru-Ce and Ru-Ru pairs derived from EXAFS are fully independent of Ce concentration.On the other hand the distance between neighboring Ce atoms increases sharply with the Ce content,which is exactly proportional to the Ce effective magnetic moment.We discuss the relation between the atomic distance and the effective magnetic moment from the point of view of the magneto-volume effect.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Magnetic characterization of ZnO doped with vanadium

The magnetic properties of vanadium doped ZnO nanorods formed by different growth methods were examined. The samples under investigation were either grown by metallorganic vapour-phase epitaxy (MOVPE) with in situ incorporation of the V atoms or by aqueous chemical growth (ACG) in combination with an ion-implantation process. The V concentration for all samples was less than 2 at.%.Field-cooled SQUID measurements only reveal a weak ferromagnetic signal still in a very sensitive measuring range. However, the MFM micrographs obtained at room temperature show a clear magnetic contrast and complex structures, the images are in good agreement with the phase images expected for vertically aligned magnetic dipoles. This is a strong indication for a ferromagnetic behaviour at room temperature.     

Local structure investigation of (Co,Cu) co-doped ZnO nanocrystals and its correlation with magnetic properties

Pure, Co doped and (Co, Cu) co-doped ZnO nanocrystals have been prepared by wet chemical route at room temperature to investigate the effect of Cu doping in Co doped ZnO nanocrystals . The nanocrystals have initially been characterized by X-ray diffraction, FTIR, Raman, optical absorption and EPR spectroscopy and the results were corroborated with DFT based electronic structure calculations. Magnetic properties of the samples have been investigated by studying their magnetic hysteresis behavior and temperature dependence of susceptibilities. Finally the local structure at the host and dopant sites of the nanocrystals have been investigated by Zn, Co and Cu K edges EXAFS measurements with synchrotron radiation to explain their experimentally observed magnetic properties.     

R相C_(60)聚合物的磁性研究

在高温高压条件下利用高压合成装置合成了二维R相C60聚合物,并利用X射线衍射(XRD)和超量子干涉(SQUID)对合成的样品进行了研究.X射线衍射(XRD)数据表明,在6 Gpa压力和700℃-725℃的温度条件下合成的聚合物为纯度较高的二维R相C60聚合物,当温度升高至800℃时,富勒烯的笼状结构塌陷,样品全部变为无定形碳结构.超量子干涉(SQUID))数据表明,在富勒烯笼状结构出现破缺或共价键结构出现断裂的边界条件下制备的二维R相C60聚合物具有铁磁性,样品的磁性来源于破缺的C60分子笼和断裂的共价键.     

R相C60聚合物的磁性研究

在高温高压条件下利用高压合成装置合成了二维R相C60聚合物,并利用X射线衍射(XRD)和超量子干涉(SQUID)对合成的样品进行了研究.X射线衍射(XRD)数据表明,在6 Gpa压力和7000C-7250C的温度条件下合成的聚合物为纯度较高的二维R相C60聚合物,当温度升高至8000C时,富勒烯的笼状结构塌陷,样品全部变为无定形碳结构.超量子干涉(SQUID))数据表明,在富勒烯笼状结构出现破缺或共价键结构出现断裂的边界条件下制备的二维R相C60聚合物具有铁磁性,样品的磁性来源于破缺的C60分子笼和断裂的共价键.     

Magnetic Properties and Spin State Transition of Gallium Doped Perovskite Cobaltite Oxide

A series of Ga doping perovskite cobaltite La2/3Sr1/3 （Co1-y Gay）03 （y = 0, 0.1, 0.2, 0.3 and 0.4） are prepared by the standard solid-state reaction method. Their magnetic properties and Co ions spin state transitions are studied. Upon doping, no appreciable structure changes can be found. However, the corresponding Curie temperature sharply decreases and the magnetization is greatly reduced, indicating that Ga doping destroys the ferromagnetic interaction in the system. In addition, the high temperature magnetization data follow the Curie-Weiss law. At least one kind of Co ions （Co^3＋ or Co^4＋） favours the mixed spin state, and most Co ions are at the lower spin state （low and intermediate state）. With increasing Ga content, more Co ions transit to the higher spin state.     

Magnetic resonance study of nanocrystalline 0.10MnO/0.90ZnO

Magnetic properties of nanosize ZnO powders doped with MnO magnetic dopand have been studied. Sample designated as 0.10MnO/0.90ZnO was characterized by XRD that revealed the presence of ZnO and ZnMnO₃ phases. An average size of magnetic ZnMnO₃ nanocrystallites was 9 nm. Magnetic resonance study has been carried out in the 4-290 K temperature range. The spectrum at each temperature was analyzed in terms of three components. The temperature dependences of resonance field, linewidth and integrated intensity of these components have been determined. Magnetic centers responsible for producing the observed spectra have been proposed.     

Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment

The single-phase diluted magnetic Fe-ion (5%) doped ZnO powders were prepared by solid-state reaction method. The powders were annealed in Ar or Ar/H₂(5%) atmosphere at 1200 °C. The crystal structure, electric and magnetic properties for the Zn_0.95Fe_0.05O powders have been studied with X-ray diffraction (XRD) vibrating sample magnetometer, resistance and Hall measurement. All the peaks for the XRD pattern of samples belong to the hexagonal (P6₃mc) lattice of ZnO, and no indication of a secondary phase. The lattice parameters for the Zn_0.95Fe_0.05O with an annealing in Ar/H₂(5%) atmosphere were a₀=3.256 Å and c₀=5.206 Å at room temperature. The hysteresis curve for the Zn_0.95Fe_0.05O at room temperature was enhanced ferromagnetic behaviour with an annealing in Ar/H₂(5%) atmosphere. We give an explanation for enhanced ferromagnetic behaviour with H₂ treatment by electric properties.     

Evidence for replacing zinc with cobalt and iron atoms in epitaxial ZnO:CoFe-diluted magnetic semiconductors

The structure and local environment of ZnO:CoFe were investigated. An epitaxial structure of ZnO thin film doped with CoFe on Al₂O₃ substrate was confirmed by XRD. By fitting the Zn EXAFS spectra, the bond distances and coordination numbers of Zn atoms in the ZnO:CoFe show that Co and Fe ions replace some positions of zinc atoms. The XANES study of Zn and O also show that CoFe cluster formation in this system can be excluded.