STM-theory: Image potential, chemistry and surface relaxation

A critical review of the different methods used nowadays for calculating tunneling currents and STM-images is presented with a special emphasis on the role played by the interface image potential and the interaction between the tip and the sample at short distances. After presenting the most commonly used approaches to this problem, we discuss in full detail how the image potential modifies critically the interface tip–sample barrier and how neglecting this effect underestimates the tunneling currents by several orders of magnitude. Although interface non-local image potential effects are difficult to introduce in a plane-wave Density Functional approach, we show how a Green’s function Density Functional formalism based on a local-orbital basis set allows us to introduce those image effects with a good accuracy. The effect of the interaction between the tip and the sample is illustrated for an Al-tip approaching an Al surface; and the role of the electronegative atoms adsorbed on the tip is discussed considering the O/Pd(1 1 1) interface and the effect of having an O-atom adsorbed on the tip apex. Finally, by analyzing the Si(1 1 2)–Ga interface we also show how the Green’s function Density Functional approach based on a local orbital basis can also be reliably used to analyze surface steochiometries.     

Influence of end group and surface structure on the current-voltage characteristics of alkanethiol monolayers on Au(111)

We present density functional theory calculations of the electronic structure and tunneling characteristics of alkanethiolate monolayers on Au(111). We systematically analyze radical3 x radical3 full coverage monolayers of SC6H12X molecules with different terminal groups, X=CH3, NH2, SH, OH, COOH, OCH3, on defect-free ("perfect") Au(111). We also study the influence of the surface-molecule bonding structure by comparing the properties of monolayers of SC6H12CH3 molecules on the perfect surface and on Au(111) surfaces with vacancies or adatoms. The tunneling currents (I) through the adsorbed monolayers with a single chemical contact have been calculated within the Tersoff-Hamann approach for voltages between -1 and +1 V. Computed currents are found to depend linearly on V at low voltage, with typical values of approximately 60 and 150 pA/molecule at 0.2 and 0.5 V, respectively, in good agreement with several experimental data. Computed tunneling currents show also a significant dependence on both the terminal group X and the surface structure. In particular, in order of decreasing intensities, currents for the different end groups are NH2 approximately SH>CH3>OH>OCH3>COOH. The relationships between the tunneling current, the work function of the surface+SAM, and the lineup of the HOMO with respect to the Fermi energy of the metal surface are examined.     

Side-by-side characterization of electron tunneling through monolayers of isomeric molecules: a combined experimental and theoretical study

We report a new experimental method for measuring relatively small differences in electron tunneling through two distinct monolayers. We place them side by side using scanning probe nanolithography and compare the tunneling currents by conductive probe atomic force microscopy under identical force, voltage, and tip contamination conditions. We demonstrate the validity of our approach by applying it to two isomeric molecules with similar length and functional groups, with only the position of two functional groups, one aromatic and the other aliphatic, being inverted with respect to each other. The relative values of the two tunneling currents, calculated using density functional theory and the Tersoff-Hamann approach, compare very well with the experimental data, providing us with an example of theory vs experiment agreement that is rather uncommon in this field.     

铜-真空-铜金属隧道结转变电压的理论研究

利用非平衡格林函数与密度泛函理论相结合方法研究了电极表面具有原子级突起的铜-真空-铜隧道结的转变电压.计算结果表明,铜电极真空隧道结的转变电压主要决定于电极表面尖端铜原子4p轨道的局域态密度,因而对电极取向和表面局域原子构型非常敏感.对于电极取向沿(111)方向的铜电极真空隧道结,当电极表面原子级突起取为铜吸附原子和金字塔型铜纳米粒子两种构型时,转变电压的计算值分别约为1.40和2.40 V.当电极取向沿(100)方向时,电极表面原子级突起分别为铜吸附原子和金字塔型铜纳米粒子两种构型的铜电极真空隧道结,其转变电压的差异更为显著.具体而言,电极表面有一金字塔型铜纳米粒子的铜电极真空隧道结的转变电压值减小至1.70 V,而电极表面原子级突起为铜吸附原子的铜电极真空隧道结却因铜吸附原子4p轨道的局域态密度过于扩展,即使在偏压超过1.80 V时仍然没有出现转变电压.这些结果表明转变电压谱可用作分析金属电极真空隧道结电子输运特性的有力工具.     

Relativistic ring currents in metallabenzenes: an analysis in terms of contributions of localised orbitals

Ring currents calculated in the ipsocentric CTOCD-DZ formalism are presented for four representative metallabenzenes, compounds in which a benzene CH group is formally replaced by a transition metal atom with ligands. Aromaticity is probed using ring currents computed using non-relativistic and relativistic orbitals (derived with relativistic effective core potentials or ZORA). Maps computed at different levels of relativistic theory turn out to be similar, showing that orbital nodal character is the main determinant of ring current. Diatropic/paratropic global ring currents in these compounds, and also circulations localised on the metal centre, are interpreted in terms of contributions of localised π-type orbitals and metal d-orbitals, respectively. All four considered metallabenzenes should be regarded as 6π electron species, despite the fact that three support diatropic ('aromatic') ring currents and one a paratropic ('anti-aromatic') current. The current-density maps determine the correct way to count electrons in these species: differential occupation of d-orbitals of formal π-symmetry contributes to circulation on the metal centre, but not around the benzenoid ring. The overall trend from strongly diatropic to weakly paratropic ring currents along the series 1 to 4 is explained by the increasing strength of interaction between formally non-bonding orbitals on the metal centre and C(5)H(5) moiety, which together make up the six-membered ring.     

Josephson effect in superfluid atomic Fermi gases at finite temperature

By using Green's function method and linear response theory the Josephson effect of neutral fermions at finite temperature is investigated. Four different hyperfine states of the atoms are assumed to be trapped and to form two superfluids via the BCS-type of pairing. The Josephson effect can be realized by coupling the superfluids with two laser fields. The laser interaction is assumed to be a small perturbation and its effect is calculated using linear response theory. Both, single particle tunneling and the Josephson current, at finite temperature are calculated in Matsubara formalism.     

Maleic anhydride adsorption on silicon (001)

The adsorption of maleic anhydride on the Si(001) surface has been investigated using the first-principles pseudopotential formalism. Our total-energy calculations suggest that maleic anhydride (C2H2-C2O3) adsorbs preferentially through a [2+2] cycloaddition of the C=C bond ([2+2]) with an adsorption energy of around 42 kcal/mol. Besides the [2+2] configuration we have also considered other possible coverages and adsorption models, including the adsorption on inter-row and intrarow dimer sites. Based on the analysis of the relative stability of different adsorption models, we propose the formation of mixed domains, containing the [2+2] unit and an interdimer unit. The comparison of our calculated electronic band structure, vibrational modes, and scanning tunneling microscopy images for the [2+2] and the favored interdimer adsorbed structures corroborate our proposed mixed domain model.     

Asymptotics of many-electron wavefunctions and calculation of tunnel transitions

A new method for defining the wavefunction asymptotics for many-electron systems in the far-subbarrier region is suggested. The method is based on the Lippman-Schwinger formalism and can provide an accuracy in defining the asymptotics similar to that in the main region of the electron localization (MREL). The wavefunctions in MREL are the basis for obtaining the asymptotics. Molecular, cluster and surface systems are considered. A new approach to the calculation of tunneling transitions is formulated. A general expression for the tunneling current in scanning tunneling microscopy (STM) is obtained which strictly takes into account the penetration factor, the correlation between the tunneling current from individual atoms, and the angular dependence of asymptotics of basic atomic functions. This permits us to state and correctly solve the problem of defining the electron wavefunctions of the surface using the data of the tunneling current measurement at various biases and the positions of the tip.     

Interface and molecular electronic structure vs tunneling characteristics of CH3- and CF3-terminated thiol monolayers on Au(111)

By means of density functional theory calculations, we investigate work functions, energy level alignments, charge transfers, and tunneling characteristics of CH3- and CF3-terminated alkane- and diphenylthiol monolayers on Au(111). While the alignments of the energy levels and the charge transfers at the metal-molecule interface are found to be determined by the value of the clean Au surface work function relative to the HOMO ionization potential (IP) at the thiolate end of the monolayer, the change of work function for the modified Au(111) surface is dominated by the properties of the thiolate monolayer, including the character, saturated or conjugated, of the molecule and the chemical nature and orientation of the terminal group. The tunneling currents through the adsorbed molecular monolayers are calculated using the Tersoff-Hamann approach. The computed difference between the I-V characteristics for the CH3- and CF3-terminated alkanethiol monolayers agree well with available experimental data. The energy barrier at the metal-molecule interface, the molecular electronic structure, and the IP of the terminal group are the key parameters which determine the tunneling properties.     

Characterization of metal oxide surfaces and thin semiconductor films by inelastic electron tunneling spectroscopy.

Inelastic electron tunneling spectroscopy (IETS) is a unique surface and interface analytical technique using electron tunneling through a metal/insulator/metal tunneling junction at cryogenic temperatures. It gives the vibrational spectrum of a very thin (nm) insulator film and the adsorbed species on it. The high sensitivity, good resolution, and wide spectral range inherent in IETS enable us to analyze the surface and interface of the insulator in detail. The tunneling junction is a good model system for oxide catalysts, electronic devises, and solid state sensors. Information about the surfaces of alumina and magnesia, the adsorption states and chemical reactions of adsorbed species occurring on these oxides can be obtained through an analysis of the tunneling spectra. The structures and properties of evaporated thin semiconductor films can also be studied. In this review, the surface characterization of alumina and magnesia, the adsorption and surface reactions of organic acids, esters, amides, and nitryls on these oxides, and the characterization of thin evaporated films of Si, Ge, and the oxides are summarized.     

Scanning tunneling microscopy and spectroscopy for cluster and small particle research

Scanning tunneling microscopy (STM) and spectroscopy (STS) are new methods to investigate atomic arrangements and electronic structures of clusters and small particles of atoms. In this paper we review recent developments in this field, in particular the work from our laboratory. We show studies of single adatoms, small clusters and larger particles of platinum and a trimer of aluminum imaged with atomic resolution on highly-orient ed pyrolytic graphite. We find different isomeric structures for clusters of a specific size. Taking the substrate lattice as reference we determine bond lengths and angles for the clusters. We find that adsorbed Pt-particles have a strong influence on the substrate. Periodic charge density modulations on the graphite lattice surrounding the particles are observed. We also discuss recent STS experiments which showed Coulomb blockade in electron tunneling. A silicon-oxide-graphite tip-junction is used where a mesoscopic insulating area containing trap levels for temporary electron storage is responsible for the blockade of single electron transport. Such an ultra-small insulator capacitor shows large voltage steps in current-voltage characteristics and quantization of the tunneling current.     

The UBI-QEP method: Basic formalism and applications to chemisorption phenomena on transition metal surfaces. Chemisorption energetics

The paper reviews the state of the art in the unity bond index-quadratic exponential potential (UBI-QEP) method. Assumptions made in the framework of the method, as well as their validity and generality, are discussed. The method is based only on well-defined observable energetic and structural parameters. UBI-QEP formulas for calculating reaction energetics (the binding energies of atomic and molecular adsorbates, the reaction enthalpies, and the intrinsic activation barriers) at different surface coverages are discussed. The UBI-QEP formalism is best suited for calculations of the adsorption of atoms and diatomic molecules but also allows one to consider polyatomic molecules in the quasi-diatomic approximation. A new formalism is discussed for determining the binding energies of various polyatomic molecules without resorting to hypothetical (and largely ambiguous) bond energy partitioning schemes. Instead, this new formalism considers the total bond energy of gas-phase species, which is an observable value. This formalism is the recent advance in the method. Various examples of calculating the energetics of atomic and molecular adsorption are presented. In most cases, the agreement of calculated and experimental values is good. The UBI-QEP method makes it possible to consider uniformly various processes on metal surfaces: adsorption, dissociation, diffusion, recombination, disproportionation, and desorption. Examples of complicated UBI-QEP calculations of molecular adsorption are presented.     

探讨电化学界面的原子－分子世界（厦门大学电化学研究工作简介之一）

探讨电化学界面的原子－分子世界（厦门大学电化学研究工作简介之一）田昭武（固体表面物理化学国家重点实验室,厦门大学化学系,厦门３６１００５）厦门大学电化学研究工作内容包括：基础研究、新研究方法与仪器的研制以及应用研究。拟在本刊陆续予以介绍。作为厦门大学...     

Dynamics and spectroscopy of hydrogen atoms on Pd{111}

Chemisorption of hydrogen on Pd{111} is a relatively simple, yet important surface chemical process. By using low-temperature scanning tunneling microscopy, tip-induced motion of adsorbed atomic hydrogen at 4 K has been observed at low coverage. The motion has been ascribed to excitation of vibrational modes that decay into translational modes; vibrational spectroscopy via inelastic electron tunneling corroborates this assignment, and the barrier to hydrogen atom motion has been determined. At higher coverages, tip-induced motion of vacancies in the hydrogen overlayer is observed, and the associated barrier has also been determined.     

Simulation of single molecule inelastic electron tunneling signals in paraphenylene-vinylene oligomers and distyrylbenzene[2.2]paracyclophanes

Inelastic resonances in the electron tunneling spectra of several conjugated molecules are simulated using the nonequilibrium Greens function formalism. The vibrational modes that strongly couple to the electronic current are different from the infrared and Raman active modes. Spatially resolved inelastic electron tunneling (IET) intensities are predicted. The simulated IET intensities for a large distyrylbenzene paracyclophane molecule are in qualitative agreement with recent experimental results.     

Fabrication of surface-supported low-dimensional polyimide networks

Interest in thermal and chemical stability of surface-supported organic networks has stimulated recent attempts to covalently interlink adsorbed molecular species into extended nanostructures. We show, using low-temperature scanning tunneling microscopy, that imidization of anhydrides and amines adsorbed on Au(111) can be thermally initiated under controlled ultrahigh vacuum conditions. Using two types of amine-functionalized polyphenyl molecules together with the organic semiconductor PTCDA, monolayer thick linear polymeric strands and a porous polymeric network with nanoscale dimensions are obtained.     

Imaging water on Ag(111): field induced reorientation and contrast inversion

Water adsorbed on Ag(111) at 70 K forms circular clusters that consist of six molecules. In scanning tunneling microscopy, this cyclic hexamer is imaged as a protrusion for voltages below V(SS)=-93 meV and as a depression for voltages above V(SS). The electronic density of states, however, increases around V(SS). We explain this counterintuitive result with the aid of calculated images by a change from constructive to destructive interference between different tunneling channels due to a field induced reorientation of the molecule under the tunneling tip.     

Chemical imaging of single 4,7,12,15-tetrakis[2.2]paracyclophane by spatially resolved vibrational spectroscopy

Single 4,7,12,15-tetrakis[2.2]paracyclophane were deposited on NiAl(110) surface at 11 K. Two adsorbed species with large and small conductivities were detected by the scanning tunneling microscope (STM). Their vibrational properties were investigated by inelastic electron tunneling spectroscopy (IETS) with the STM. Five vibrational modes were observed for the species with the larger conductivity. The spatially resolved vibrational images for the modes show striking differences, depending on the coupling of the vibrations localized on different functional groups within the molecule to the electronic states of the molecule. The vibrational modes are assigned on the basis of ab initio calculations. No IETS signal is resolved from the species with the small conductivity.