EAST低混杂波功率沉积和电流驱动剖面控制的数值模拟

对原有的低混杂波电流驱动模拟程序进行改进,使之能够研究EAST上如何控制低混杂波功率沉积和电流驱动分布.在EAST非圆截面的平衡位形下,应用改进后的程序详细计算不同低混杂波功率谱、等离子体密度和温度分布对低混杂波功率沉积位置和电流驱动剖面分布的影响.通过计算发现,选取合适的低混杂波功率谱,等离子体温度分布和密度分布可以对功率沉积位置和电流驱动分布的剖面进行控制;调节等离子体温度分布可以很好的控制低混杂波近轴电流驱动分布和离轴电流驱动分布.     

东方超环(EAST)装置中等离子体边界锂杂质的碰撞-辐射模型

在东方超环(EAST)装置中,由于大量锂化壁处理的使用,切向可见光摄像机拍摄到等离子体边界通常存在一条由锂(Li)杂质形成的绿色发光带.本文基于EAST边界等离子体参数条件,基于碰撞-辐射模型给出由已知边界等离子体状态推算Li绿光光强的空间分布的具体方法,并针对简化后的一维径向分布问题,收集、处理OPEN-ADAS数据库的数据,采用软件Mathematica 10.4.1编写相应的数值计算程序,分别输入EAST工作于低约束(L)与高约束(H)模时获得的两组边界电子温度、密度分布数据,给出并分析比较了利用该模型的计算结果.此项工作对于未来建立通过测量及反演边界锂杂质特征谱线强度的空间分布来重构边界等离子体状态的全新技术和研究存在三维磁场扰动条件下的边界等离子体行为均具有重要的理论参考价值.     

低混杂波高N‖分量对EAST等离子体电流驱动的影响

EAST等离子体高约束模运行条件下，在等离子体边缘区域观测到明显的等离子体电流带.在EAST托卡马克装置非圆截面平衡位形下，使用射线追踪方法研究低混杂波高平行折射率N_‖分量对电流驱动的影响.结果表明：当-8≤N_‖≤-6时，平行折射率分量能够在小半径（0.7 < r/a < 1）区域驱动kA量级的等离子体电流.对于具有台基区、等离子体边缘温度更高的电子温度剖面，驱动电流的位置r/a>0.9.低混杂波朗道阻尼的理论分析与数值模拟结果一致.另外，高N_‖低混杂波在等离子体边缘的功率沉积和电流驱动与电子温度分布和发射谱分布相关.     

HT-7装置液态锂限制器实验中锂的腐蚀与沉积特性的研究

在磁约束聚变等离子体装置中, 面对等离子体的第一壁将直接影响高温等离子体性能及第一壁寿命, 具有表面自我修复的、能有效抑制边界粒子再循环的液态金属锂第一壁越来越被重视, 其中液态锂第一壁与等离子体相互作用的研究尤其重要. 本文研究了HT-7装置液态锂限制器实验中锂的表面腐蚀及在装置内沉积特性、及其对等离子体性能影响. 实验表明, 当锂与等离子体相互作用较弱时, 锂以微弱的蒸发及溅射形式从表面腐蚀并进入等离子体, 表现为锂的线辐射有所增强, 等离子体内杂质水平降低, 氢再循环降低, 有利于等离子体约束性能提高; 当锂与等离子体间的相互作用比较强时, 锂主要以锂滴形式直接进入等离子体, 引起锂的辐射爆发, 最终引发等离子体放电破裂. 通过对锂斑及样品的分析发现, 锂主要沉积在限制器周围, 并且在低场侧及沿着等离子体电流方向沉积居多, 表现为极向和环向分布不均匀, 这也导致边界粒子再循环分布的不均匀. 这些实验为研究液态锂第一壁与等离子体相互作用, 分析液态锂第一壁在托卡马克装置上应用具有重要参考意义.     

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利用EAST装置单道远红外HCN激光干涉仪测量了等离子体中心道(R=1.82m)线平均电子密度。通过充气加料连续提升主等离子体密度,首次在EAST装置上观察到偏滤器等离子体的三种不同状态：低再循环(偏滤器靶板处等离子体温度较高,密度较低),高再循环(偏滤器靶板处等离子体温度较低,密度较高)和脱靶(偏滤器靶板处等离子体温度和密度都很低)等离子体状态。分析了EAST偏滤器在这三种不同状态下的物理现象。     

EAST 装置等离子体逃逸电子同步辐射行为的实验研究

通过红外可见内窥镜诊断系统对EAST 等离子体芯部逃逸电子的同步辐射功率谱进行了分析,得出低能段逃逸电子同步辐射主要在红外波段,随着逃逸电子能量的增加,同步辐射向短波方向移动进入可见光波段。在欧姆放电条件下,对逃逸电子同步辐射所产生的的红外可见光进行了成像分析,同时研究了EAST 等离子体在低杂波和中性束注入加热条件下的逃逸电子行为。实验结果显示,低杂波和NBI 的投入总体抑制电子的逃逸,但低杂波投入初期产生的快电子对逃逸电子的产生具有促进作用。     

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通过红外可见内窥镜诊断系统对EAST等离子体芯部逃逸电子的同步辐射功率谱进行了分析,得出低能段逃逸电子同步辐射主要在红外波段,随着逃逸电子能量的增加,同步辐射向短波方向移动进入可见光波段。在欧姆放电条件下,对逃逸电子同步辐射所产生的的红外可见光进行了成像分析,同时研究了EAST等离子体在低杂波和中性束注入加热条件下的逃逸电子行为。实验结果显示,低杂波和 NBI 的投入总体抑制电子的逃逸,但低杂波投入初期产生的快电子对逃逸电子的产生具有促进作用。     

EAST远红外激光干涉仪与密度爬升实验研究

利用EAST装置单道远红外HCN激光干涉仪测量了等离子体中心道(R=1.82m)线平均电子密度。通过充气加料连续提升主等离子体密度,首次在EAST装置上观察到偏滤器等离子体的三种不同状态：低再循环(偏滤器靶板处等离子体温度较高,密度较低),高再循环(偏滤器靶板处等离子体温度较低,密度较高)和脱靶(偏滤器靶板处等离子体温度和密度都很低)等离子体状态。分析了EAST偏滤器在这三种不同状态下的物理现象。     

VUV信号强度与等离子体宏观参数相关性分析

东方超环(EAST)上高速真空紫外(VUV)成像系统是一套选择性测量中心波长为13.5 nm的等离子体线辐射的光学成像系统。此系统具有高时空分辨能力,主要用于边界(包括台基区)等离子体行为研究。该系统已经投入EAST等离子体物理实验并获得了大量的实验数据。基于这些数据,分析了VUV诊断系统的信号强度与等离子体宏观参数之间的相关性,着重研究了EAST上中性束注入(NBI)加热功率、杂质(碳和锂)水平、电子密度等因素对VUV信号强度的影响。结果与预期基本一致:随着NBI功率的增加,VUV信号强度随之增强;VUV信号强度与电子密度、杂质水平呈现线性关系。此外,本文还评估了由于NBI注入引起的电荷交换复合产生的C5+离子对VUV信号的贡献,结果表明这部分贡献可以忽略不计。     

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用TSC程序模拟了EAST装置等离子体放电的全过程。模拟中考虑了自举电流，并加入了离子回旋共振加热ICRH和快波电流驱动FWCD，得到了中心电子温度4.5keV、中心离子温度3.8keV、中心电子密度1.2×1020m–3的D形截面的等离子体。根据模拟结果对EAST装置进行了伏秒数分析，并研究了不同等离子体电流上升时间、有效电荷数Zeff对放电的影响。     

Heat flow through a plasma sheath in the presence of secondary electron emission from plasma‐wall interaction

The formation of a plasma sheath in front of a negative wall emitting secondary electron is studied by a one‐dimensional fluid model. The model takes into account the effect of the ion temperature. With the secondary electron emission (SEE ) coefficient obtained by integrating over the Maxwellian electron velocity distribution for various materials such as Be, C, Mo, and W, it is found that the wall potential depends strongly on the ion temperature and the wall material. Before the occurrence of the space‐charge‐limited (SCL ) emission, the wall potential decreases with increasing ion temperature. The variation of the sheath potential caused by SEE affects the sheath energy transmission and impurity sputtering yield. If SEE is below SCL emission , the energy transmission coefficient always varies with the wall materials as a result of the effect of SEE , and it increases as the ion temperature is increased. By comparison of with and without SEE , it is found that sputtering yields have pronounced differences for low ion temperatures but are almost the same for high ion temperatures.     

Siliconization for Wall Conditioning in the HL-2A Tokamak

The sputtering of impurities is caused by the interactions between plasma and the first wall, and the recycling of the gas affects the particle and energy transport of plasmas with a complicated mechanism in plasma operation. It is important for present tokarnaks to achieve a good confinement and high performance plasmas by means of controls of the vacuum condition, usage of low Z materials, control of the recycling of neutral particles and suppressions of the appearances and yield of impurities. For higher plasma parameters, some of the first wall of HL-2A is covered with graphite materials and carbon fiber tiles. Hence the studies on the in-situ coating application and development, and the interactions between the coating film and plasma are needed to effectively control the impurity, improve plasma confinement and achieve high performance plasma.     

Rotational stabilization of resistive wall modes by the shear alfvén resonance

It is found that resistive wall modes with a toroidal number n = 1 in tokamaks can be stabilized by plasma rotation at a low Mach number, with the rotation frequency being lower than the ion bounce frequency but larger than the ion and electron precession drift frequencies. The stabilization is the result of the shear-Alfvén resonance, since the thermal resonance effect is negligible in this rotation frequency range. This indicates that tokamaks can operate at normalized pressure values beyond the no-wall stability limit even for low values of plasma rotation, such as those expected in fusion reactor scale devices.     

杂质离子对等离子体边界参量的影响

采用一维流体模型研究了含有杂质离子的等离子体与器壁材料相互作用给边界等离子体参量带来的影响.通过数值模拟,研究了分别选用碳和钨作为器壁材料时,器壁温度不同情形下热发射产生的电子对等离子体器壁电势、电场强度、热发射电子流以及沉积器壁离子动能流的影响.研究结果发现,当面向等离子体材料表面温度升高时,器壁电势和热发射产生的电流将增加,器壁电场强度和离子沉积器壁动能流则会减小,并且钨作为器壁材料要比碳作为器壁材料对于等离子体边界参量影响更明显.此外,研究了钨作为器壁材料时,碳杂质离子（浓度和电荷数）对等离子体器壁参量的影响.     

Continuous improvement of H-mode discharge performance with progressively increasing lithium coatings in the National Spherical Torus Experiment

Lithium wall coatings have been shown to reduce recycling, improve energy confinement, and suppress edge localized modes in the National Spherical Torus Experiment. Here, we show that these effects depend continuously on the amount of predischarge lithium evaporation. We observed a nearly monotonic reduction in recycling, decrease in electron transport, and modification of the edge profiles and stability with increasing lithium. These correlations challenge basic expectations, given that even the smallest coatings exceeded that needed for a nominal thickness of the order of the implantation range.     

Results of vacuum cleaning techniques on the performance of LiFfield-threshold ion sources on extraction applied-B ion diodes at 1-10TW

Uncontrolled plasma formation on electrode surfaces limits performance in a wide variety of pulsed power devices such as electron and ion diodes, transmission lines, radio frequency (RF) cavities, and microwave devices. Surface and bulk contaminants on the electrodes in vacuum dominate the composition of these plasmas, formed through processes such as stimulated and thermal desorption followed by ionization. We are applying RF discharge cleaning, anode heating, cathode cooling, and substrate surface coatings to the control of the effects of these plasmas in the particular case of applied-B ion diodes on the SABRE (1 TW) and PBFA-X (30 TW) accelerators. Evidence shows that our LiF ion source provides a 200-700 A/cm² lithium beam for 10-20 ns which is then replaced by a contaminant beam of protons and carbon. Other ion sources show similar behavior. Our electrode surface and substrate cleaning techniques reduce beam contamination, anode and cathode plasma formation, delay impedance collapse, and increase lithium energy, power, and production efficiency. Theoretical and simulation models of electron-stimulated and thermal-contaminant desorption leading to anode plasma formation show agreement with many features from experiment. Decrease of the diode electron loss by changing the shape and magnitude of the insulating magnetic field profiles increases the lithium output and changes the diode response to cleaning. We also show that the LiF films are permeable, allowing substrate contaminants to affect diode behavior. Substrate coatings of Ta and Au underneath the LiF film allow some measure of control of substrate contaminants, and provide direct evidence for thermal desorption. We have increased lithium current density by a factor of four and lithium energy by a factor of five through a combination of in situ surface and substrate cleaning, substrate coatings, and field profile modifications     

Comparative measurements on thermal plasma jet characteristics inatmospheric and low pressure plasma sprayings

The ion and electron temperatures and plasma flow velocities are measured and compared between atmospheric and low pressure plasma spraying systems. The measurements of ion temperature for two systems are carried out by an optical emission spectroscopy which uses the relative emissivities of isolated Ar I emission lines. The electron density and temperature are measured by a Langmuir probe rotating across the plasma jets. The ion saturation currents collected by a Mach probe at two orientations, perpendicular and parallel to the plasma jet, determine the flow velocity. The spatial distributions of electron density, plasma flow velocity, and the associated shock activity in thermal plasma jets are discussed in conjunction with their direct dependency upon the ambient pressures as well as the torch powers. Measurements on temperatures and velocity profiles of thermal plasma jets reveal the general features of the LPPS jet characteristics, i.e., higher velocity flow with lower temperature, longer heating zone of expanded flame, and more extended accelerating zone compared with those of the APS jets. The shock activity clearly exists in the form of standing shock waves in the plasma jet of LPPS in view of flow compression and abrupt velocity drop which are appeared in the results of measurements on the variations of electron density and flow velocity along the plasma jet. In the center of the plasma jet of APS, the electron density is high enough to reach the LTE criterion, and the difference between ion and electron temperatures becomes insignificant as the torch input power increases     

两种温度电子对稳态等离子体鞘层的影响

建立包含冷热电子的无碰撞等离子体鞘层的流体模型,利用数值模拟研究含有两种温度电子时等离子体鞘层的产生.结果表明:对于含有两种不同温度电子的稳态等离子体,冷电子的温度越低或者冷电子的含量越多,鞘边离子的马赫数临界值就越小,鞘层的宽度就变得越窄,沉积器壁的离子动能流也就越少.此外,研究不同种类的等离子体(Ar、Ke、Xe),鞘层厚度和离子沉积器壁动能流受冷电子的影响.     

L–H power threshold studies with tungsten/carbon divertor on the EAST tokamak

The power threshold for low (L) to high (H) confinement mode transition achieved by radio-frequency heating and molybdenum first wall with lithium coating has been experimentally investigated on the EAST tokamak for two sets of divertor geometries and materials: tungsten/carbon divertor and full carbon divertor. For both sets of divertors, the power threshold was found to decrease with gradual accumulation of the lithium wall coating, suggesting the important role played by the low Z impurities and/or the edge neutral density on the L–H power threshold. When operating in the upper single null configuration, with the ion grad-B drift direction away from the primary X-point, a lower normalized power threshold is observed in EAST with the tungsten/carbon divertor, compared to the carbon divertor after intensive lithium wall coating. A newly installed cryopump increasing the pumping efficiency also plays an important part in the observed lower threshold. In addition, the H-mode in the Quasi-Snowflake divertor configuration has been obtained on EAST, exhibiting higher L–H power threshold compared to the lower single null configuration with similar I_P/B_T pairs.