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1.
Heteroepitaxial growth of kesterite Cu2ZnSnS4 (CZTS) thin film on cubic ZnS(100) single crystal substrate was achieved by radio frequency magnetron sputtering from a single CZTS target. An optimal substrate temperature in the range of 470–500 °C is found suitable for this epitaxial growth. The growth of CZTS was confirmed to be along a‐axis. The sputtered CZTS thin film is homogeneous throughout the whole film. The band gap of the film is found to be approximately 1.51 eV, i.e., promising for high efficiency thin film solar cells.

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2.
Polymer nanocomposites containing different concentrations of Au nanoparticles have been investigated by small angle X‐ray scattering and electronic absorption spectroscopy. The variation in the surface plasmon resonance (SPR) band of Au nanoparticles with concentration is described by a scaling law. The variation in the plasmon band of ReO3 nanoparticles embedded in polymers also follows a similar scaling law.

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3.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.

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4.
In this Letter we demonstrate that hydrogen‐terminated porous silicon (PSi) layers and powders can serve as highly efficient reductive templates for noble metal salts. The reduction results in metal nanoparticle (NP) formation in the pores of PSi. Gold NP formation has been monitored in‐situ by measuring the plasmon resonance response. Pt NPs, formed in the PSi matrix, were investigated by transmission electron microscopy and energy‐dispersive X‐ray analysis. Furthermore, hybrid Pt/PSi nanocomposites exhibit a high catalytic activity for CO oxidation.

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5.
Dip‐coating of a colloidal suspension is investigated in situ with microbeam grazing incidence small‐angle X‐ray scattering. We focus on the real‐time monitoring of a vertical dip‐coating process yielding insights into structural changes during pattern formation of the thin film. With the selected configuration a fixed spot on the sample surface is probed and the structural information at the time the contact line passes this spot is obtained, hence revealing the structure at the vicinity of the flowing meniscus owing to the microfocused beam. After dip‐coating the morphology is analyzed with atomic force microscopy, yielding real space information about the arrangement of individual nanoparticles at the film surface.

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6.
We study graphene growth on hafnia (HfO2) nanoparticles by chemical vapour deposition using optical microscopy, high resolution transmission electron microscopy and Raman spectroscopy. We find that monoclinic HfO2 nanoparticles neither reduce to a metal nor form a carbide while nucleating nanometer domain‐sized few layer graphene. Hence we regard this as an interesting non‐metallic catalyst model system with the potential to explore graphene growth directly on a (high‐k) dielectric.

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7.
Thin amorphous tantalum films are prepared on Si(111) substrates in a metallic glassy state. The amorphous monoatomic state of the film is characterized by X‐ray diffraction studies. The glassy state leads to a negative t emperature c oefficient of the r esistivity (TCR) for low sample temperatures <200 K which is attributed to incipient localization. Above 200 K a positive TCR is observed as expected for a normal Boltzmann transport regime. Upon heating the Si substrate to 1200 K TaSi2 is formed out of the amorphous tantalum film and the silicon substrate. The TaSi2 layer is crystalline as evident from X‐ray diffraction data.

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8.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.

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9.
A new method for fabricating carbon nanotube‐conducting polymer (CNT‐CP) composite single nanowires is reported. The method developed is highly efficient, reliable, and economical because it obviates the time consuming process of template fabrication and the post‐synthesis task of positioning nanowires. Single nanowires with diameters of 50‐500 nm are fabricated between electrodes, self‐templated by dielectrophoresis and electropolymerization. Fabrication of an individually addressed nanowire array with cantilever electrodes on a microchip is demonstrated.

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10.
InGaN/GaN light‐emitting diodes (LEDs) are known to exhibit a strongly non‐uniform vertical carrier distribution within the multi‐quantum well (MQW) active region. We propose to eliminate “dark” quantum wells by insertion of multiple tunnel junctions into the MQW which allow for the repeated use of electrons and holes for photon generation. In good agreement with available measurements, we demonstrate by self‐consistent numerical simulation that such tunnel junction LED design promises quantum efficiencies as high as 250% as well as a strongly enhanced output power at high input power, compared to conventional LED concepts.

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11.
The Raman spectra of surface regions of bulk Cu2ZnSnS4 (CZTS) samples with different Cu and Zn cation content were obtained and the differences in the spectra are attributed to statistical disorder effects in the cation sublattice. This disorder in the Cu and Zn sublattices may initiate a change of the crystal symmetry from kesterite‐type $({I\bar 4})$ to $({I\bar 42m})$ space group. The investigated CZTS crystals grown at high temperature are characterised by the co‐existence of regions with different composition ratio of Cu/(Zn + Sn) which results in kesterite and disordered kesterite phases. The presence of a disordered phase with ${I\bar 42m}$ symmetry is reflected in the appearance of a dominant broadened A‐symmetry peak at lower frequency than the peak of the main A‐symmetry kesterite mode at 337 cm–1. We suppose that due to a small energy barrier between these phases the transition from one phase to the other can be stimulated by optical excitation of Cu2ZnSnS4. The analysis of the Raman spectra measured under different excitation conditions has allowed obtaining first (to our knowledge) experimental evidence of the existence of such optically induced structural transition in CZTS. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

12.
We demonstrate the monolithic integration of a microstructured organic photodiode with a planar optical stripe waveguide. The manufacturing of this waveguide‐integrated organic photodiode is based on an UV photolithography process. The integration of photodiodes with optical waveguides represents an essential building block in the field of optoelectronic‐photonic integrated circuits.

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13.
A high‐efficiency bulk heterojunction organic photovoltaic cell (OPV) was achieved by the electrospray deposition method. The surface roughness of the P3HT:PCBM thin film can be reduced using the mixed solvent consisting of o‐dichlorobenzene (o‐DCB) and acetone. The effect of acetone concentration is related to its dielectric constant. Under an optimized concentration of acetone in o‐DCB (20 vol%), the P3HT/PCBM active layer with a smooth surface can be formed, and the power conversion efficiency of the OPV was 1.9%.

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14.
We have shown that nitrophenyl groups may be added to the surface of few‐layer epitaxial graphene (EG) by the formation of covalent carbon–carbon bonds thereby changing the electronic structure and transport properties of EG from near‐metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning.

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15.
We demonstrate the self‐catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non‐tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano‐wires are defined by the indium droplets. This technique unravels a controllable, cost‐effective and time‐efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.

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16.
ZnO thin films with a rippled surface structure were used as electron‐collecting layers of inverted organic photovoltaics (OPVs). Using additional ultrathin layers of ZnO and TiO2 fabricated using atomic layer deposition (ALD), not only the power‐conversion efficiency of the OPVs could be increased (up to 3.5%), but also the photovoltaic performance became nearly constant within 100 days without any additional encapsulations of the solar cells under ambient conditions.

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17.
By means of first‐principles calculations we predict the stability of silicene as buckled honeycomb lattice on passivated substrates of group‐IV(111)1 × 1 surfaces. The weak van‐der‐Waals interaction between silicene and substrates does not destroy its linear bands forming Dirac cones at the Brillouin zone corners. Only very small fundamental gaps are opened around the Fermi level.

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18.
A resonance splitting effect is investigated in a system composed of two cavities coupled by two unidirectional waveguides. Both theoretical analysis and numerical calculations demonstrate that the resonance splitting (indicating a coupling between the cavities) is independent of the phase shift between the cavities, which is in contrast to previous research where reciprocal waveguides are used. Moreover, this splitting can be tunable by an external magnetic field. Our findings offer a possibility to realize effective coupling between remote on‐chip resonators, which is highly demanded in the next‐generation photonic circuits.

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19.
The properties of transition‐metal (V, Cr, Mn, Fe, Co, Ni) δ‐doped ZnO are reported based on ab‐initio electronic structure calculations where the on‐site electronic correlations are included using the Hubbard parameters. The calculated electronic and magnetic properties are considerably altered with respect to usual band‐structure calculations. Most of the studied systems are found to be either half‐metals or ferromagnetic/antiferromagnetic semiconductors and thus can be employed in a variety of spintronic applications as spin‐filter materials.

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20.
The metastability of the bixbyite‐ and corundum‐type In2O3 polymorphs up to 33 GPa (at room temperature) is shown. While compressed (in diamond anvil cells) and laser‐heated, both polymorphs undergo a phase transition to the Rh2O3‐II‐type structure (space group Pbcn, No. 60). The direct transition from bixbyite to Rh2O3‐II structure has not yet been observed for any other oxide.

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