Simplified hybrid white organic light‐emitting diodes with efficiency/efficiency roll‐off/color rendering index/color‐stability trade‐off

A high‐performance hybrid white organic light‐emitting diode (WOLED) based on a simple structure has been developed. The resulting device exhibits a maximum total current efficiency and power efficiency of 35.7 cd/A and 30.6 lm/W, respectively. Even at a high luminance of 1000 cd/m², a current efficiency of 32.0 cd/A and a power efficiency of 19.4 lm/W are obtained, suggesting that the device exhibits a low efficiency roll‐off. Besides, the device shows excellent color‐stability during a wide range of luminance and a high color rendering index (CRI) of 83 is obtained. Moreover, the origin of the superior properties is explored comprehensively. Such achieved results demonstrate that high efficiency, low efficiency roll‐off, stable color and high CRI can be simultaneously realized in a simplified hybrid WOLEDs. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The study on interactions between 1‐ethyl‐3‐methylimidazolium chloride and benzene/pyridine /pyrrole/thiophene

The density functional theory was used to investigate the interactions between 1‐ethyl‐3‐methylimidazolium chloride ([EMIM]Cl) and benzene/pyridine/pyrrole/thiophene. The complexes formed between [EMIM]Cl and benzene/pyridine/pyrrole/thiophene were optimized at the ωB97XD/6‐31++G** level, and the optimized complexes were further analyzed by natural bond orbital, atoms in molecules, and noncovalent interaction. The calculated results show that the interaction energy between ionic liquid and benzene/pyridine/pyrrole/thiophene is in the order pyrrole > pyridine > thiophene > benzene. The major interactions between ionic liquid and benzene/pyridine/pyrrole/thiophene are hydrogen bonding and π‐π interaction, accompanied by C···H, N···H, H···H, and S···H weak interactions. Both cation and anion of ionic liquid are involved in interactions with aromatic compounds.     

5‐Phenyl‐1,3,4‐oxadiazole‐2‐thiol/polyamide‐montmorillonite microbicides nanocomposites as drug delivery system

The preparation and structural characterization of polymeric microbicides consisting of 5‐phenyl‐1,3,4‐oxadiazole‐2‐thiol covalently bound to polyamide based on diethyl‐2,3‐dihydroxysuccinate and polyoxypropylenetriamine Jeffamine (T₄₀₃) are described. Two different mole ratios of 5‐phenyl‐1,3,4‐oxadiazole‐2‐thiol was reacted with chloroacetylated diethyl‐2,3‐dihydroxysuccinate followed by polycondensation with Jeffamine (T₄₀₃). The nanocomposites were prepared by modification of microbicide polyamides to yield polymers with phosphonium salt or amine hydrochloride salt followed by ion exchange process between the phosphonium salt or amine hydrochloride of the polyamides and the intermellar sodium cation of the clay mineral montmorillonite. The monomers were characterized by mass spectrum, proton nuclear magnetic resonance. The polymers showed good or moderate antimicrobial activities. Nanocomposites were characterized by Fourier transformed infrared spectroscopy, X‐ray diffraction, thermal gravimetric analysis, and transmission electron microscope. The swelling behavior and release of 5‐phenyl‐1,3,4‐oxadiazole‐2‐thiol in different pH values (2.3, 5.8, and 7.4) were studied. A slow release, ranging from 12% to 28% after 50 hours was recorded from nanocomposites. However, the release profile reached almost 70% from polyamides. The antimicrobial activity of the polyamides was studied against gram‐negative bacteria, gram‐positive bacteria, yeast, and the filamentous fungi by well diffusion method. The polyamides showed better antimicrobial activities than 5‐phenyl‐1,3,4‐oxadiazole‐2‐thiol.     

InGaN/GaN dot‐in‐a‐wire: ultimate terahertz nanostructure

The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.

     

Fully room‐temperature‐fabricated TiN/TaOx/Pt nonvolatile memory devices

The reliable resistive switching properties of TiN/TaO_x/Pt structures fabricated with a fully room‐temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 10⁵ cycles. No data loss was reported upon continuous readout for more than 10⁴ s at 125 °C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial “SET” (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room‐temperature fabrication process make the TiN/TaO_x/Pt memory devices promising for future nonvolatile memory application. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Non‐degenerate second‐order scattering and difference combination bands in infrared‐pump/anti‐Stokes resonance Raman‐probe experiments

Non‐degenerate second‐order scattering due to interaction of infrared and ultraviolet pulses is observed in picosecond infrared‐pump/anti‐Stokes Raman‐probe experiments under electronic resonance conditions. We detected resonance hyper‐Rayleigh scattering at the sum frequency of the pulses as well as the corresponding frequency‐down‐shifted resonance hyper‐Raman lines. Nearly coinciding resonance hyper‐Raman and one‐photon resonance Raman spectra indicate conditions of A‐term resonance Raman scattering. Second‐order scattering is distinguished from transient anti‐Stokes Raman scattering of v = 1 to v = 0 transitions and v = 1 to v′ = 1 combination transitions by taking into account their different spectral and temporal behaviour. Separating these processes is essential for a proper analysis of transient vibrational populations. Copyright © 2007 John Wiley & Sons, Ltd.     

Ultra‐low acoustic‐phonon‐limited mobility and giant phonon‐drag thermopower in MgZnO/ZnO heterostructures

We present numerical simulations of the acoustic‐phonon‐limited mobility, $ \mu _{\rm ac}, $ and phonon‐drag thermopower, S^{\rm g},$ in two‐dimensional electron gases confined in MgZnO/ZnO heterostructures. The calculations are based on the Boltzmann equation and are made for temperatures in the range 0.3–20 K and sheet densities 0.5–30 × 10¹⁵ m^–2. The theoretical estimations of \mu _{\rm ac} $ are in good agreement with the experiment without any adjustable parameters. We find that the magnitude of \mu _{\rm ac} $ is dramatically decreased in relation to GaAs‐based heterostructures. The phonon‐drag thermopower, S^{\rm g},$ which according to Herring's expression is inversely proportional to \mu _{\rm ac} is severely increased exceeding 200 mV/K at T = 5 K depending on sheet density. The giant values of S^{\rm g} $ lead to a strong improvement of the figure of merit ZT at low temperatures. Our findings suggest that MgZnO/ZnO heterostructures can be candidates for good thermoelectric materials at cryogenic temperatures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Two‐photon absorption induced anti‐Stokes emission in single InGaN/GAN quantum‐dot‐like objects

We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti‐Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects

In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.     

Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN

A nanosecond‐pulsed current–voltage technique was applied to study hot‐electron transport along the two‐dimensional electron gas channel confined at a nominally undoped AlInN/AlN/GaN heterointerface. Hot‐electron drift velocity was deduced under the assumptions of uniform longitudinal electric field and field‐independent electron sheet density. At a fixed electric field strength, a resonance‐type non‐monotonous dependence of the velocity on the electron density was found in the investigated range from 1 to When the electric field increased from 20 kV/cm to 80 kV/cm, the peak velocity increased from ～1.1 to cm/s, and the position of the resonance shifted from ～1.1 to ～1.2 respectively. The resonance position correlates with that for the fastest decay of hot phonons known from independent experiment. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Au/TiO2 nanorod‐based Schottky‐type UV photodetectors

TiO₂ nanorods (NRs) were synthesized on fluorine‐doped tin oxide (FTO) pre‐coated glass substrates using hydrothermal growth technique. Scanning electron microscopy studies have revealed the formation of vertically‐aligned TiO₂ NRs with length of ～2 µm and diameter of 110–128 nm, homogenously distributed over the substrate surface. 130 nm thick Au contacts using thermal evaporation were deposited on the n‐type TiO₂ NRs at room temperature for the fabrication of NR‐based Schottky‐type UV photodetectors. The fabricated Schottky devices functioned as highly sensitive UV photodetectors with a peak responsivity of 134.8 A/W (λ = 350 nm) measured under 3 V reverse bias. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Visible light‐induced diastereoselective E/Z‐photoisomerization equilibrium of the C=C benzofuran‐3‐one‐hydantoin dyad

The diastereoselective photodependent isomerization equilibrium of E/Z‐1,3‐ditolyl‐5‐[3‐oxobenzofuran‐2(3H)‐ylidene]imidazolidine‐2,4‐dione ( 5 ) is reported. Both diastereomers E-5 and Z-5 are stereochemically stable in solid state but show significant photosensibility in solutions of halogenated solvent. The photoisomerization equilibrium of E/Z‐ 5 is therefore deduced from the ¹H NMR profile after visible‐light irradiation of both E-5 and Z-5 samples. The results of the kinetic study, monitored by UV‐HPLC, reveal that the E/Z equilibrium is diastereoselective and photodependent, being the transformation E ? Z proceeding faster than that of Z ? E, and the E/Z ratio at the equilibrium depends on the used solvent, light source, and temperature. Both diastereomers are visible‐light photosensitive tending to coexist together in equilibrium solutions at a determined ratio, which is always in favor of the Z‐product assuming a minimum thermodynamic energy and an increased entropy of the system. Time‐dependent density functional theory calculations suggest that the photoisomerization mechanism proceeds via a conical intersection involving the first‐excited state: Upon irradiation, the E-5 isomer is excited to the S1 potential energy surface, where it relaxes through rotation of the C=C bond and reaches a conical intersection with the ground‐state potential energy surface, thus yielding the Z-5 isomer. Copyright © 2014 John Wiley & Sons, Ltd.     

Wintersweet Branch‐Like C/C@SnO2/MoS2 Nanofibers as High‐Performance Li and Na‐Ion Battery Anodes

Structure and morphology of molybdenum disulfide (MoS₂) play an important role in improving its reversible lithium storage and sodium storage as anodes. In this study, a facile method is developed to prepare C/C@SnO₂/MoS₂ nanofibers with MoS₂ nanoflakes anchoring on the core–shell C/C@SnO₂ nanofibers through hydrothermal reaction. By adjusting the concentration of MoS₂ precursors, the synthesized MoS₂ with different slabs dimensions, size, and morphologies are obtained, constituting budding and blooming wintersweet branch‐like composite structure, respectively. Owing to scattered MoS₂ nanoparticles and sporadic MoS₂ nanoflakes, the budding wintersweet branch‐like composite nanofibers processes less slabs of staking in number and large specific surface area. Benefiting from the exposed C@SnO₂ shell layer, the synergistic effect among SnO₂, carbon, and MoS₂ is strengthened, which maximizes the advantage of each material to exhibit stable specific capacities of 650 and 230 mAh g^?1 for Li‐ion batteries and Na‐ion batteries after 200 cycles.     

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Picosecond time‐resolved laser pump/X‐ray probe experiments using a gated single‐photon‐counting area detector

The recent developments in X‐ray detectors have opened new possibilities in the area of time‐resolved pump/probe X‐ray experiments; this article presents the novel use of a PILATUS detector to achieve X‐ray pulse duration limited time‐resolution at the Advanced Photon Source (APS), USA. The capability of the gated PILATUS detector to selectively detect the signal from a given X‐ray pulse in 24 bunch mode at the APS storage ring is demonstrated. A test experiment performed on polycrystalline organic thin films of α‐perylene illustrates the possibility of reaching an X‐ray pulse duration limited time‐resolution of 60 ps using the gated PILATUS detector. This is the first demonstration of X‐ray pulse duration limited data recorded using an area detector without the use of a mechanical chopper array at the beamline.     

High‐temperature stability of Au/p‐type diamond Schottky diode

Rectification properties of Au Schottky diodes were investigated in high‐temperature operation. These diodes were fabricated on a p‐type diamond single crystal using the vacuum‐ultraviolet light/ozone treatment. The ideality factor n of the Schottky diodes decreased monotonically with increasing measurement temperature whereas the Schottky barrier height ?_b increased, and ?_b reached 2.6 eV at 550 K with n of 1.1. Through high temperature heating at 870 K, the mean value of ?_b at 300 K changed permanently from 2.2 eV to 1.1 eV. Decrease of ?_b might originate from a dissolution of oxygen termination at the Au/diamond interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)