Synthesis and field emission of patterned ZnO nanorods

A simple and self-catalytic method has been developed for synthesizing finely patterned ZnO nanorods on ITO-glass substrates under a low temperature of 500 °C. The patterned ZnO nanorod arrays, a unit area is of 400 × 100 μm², are synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized ZnO nanorods are characterized by means of scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The mechanism of formation of ZnO nanorods is also discussed. The measurement of field emission (FE) reveals that the as-synthesized ZnO nanorods arrays have a turn-on field of 3.3 V/μm at the current density of 0.1 μA/cm² and a low threshold field of 6.2 V/μm at the current density of 1 mA/cm². So this approach must have a potential application of fabricating micropatterned oxide thin films used in FE-based flat panel displays.     

Catalyst-free synthesis and luminescence of aligned ZnO nanorods

Quasi-aligned undoped ZnO nanorods with diameter in the range 100–300 nm and length of several micrometers have been grown catalyst-free on Si(1 0 0) wafer in a one-step process by direct heating of Zn powders. All nanowires are single crystals and are aligned vertically to the substrate surface with c-axis preferred orientation. XRD, HRTEM and Raman studies revealed that the ZnO nanorods have wurtzite phase, are highly crystalline and well aligned with the lattice parameters a=0.32 nm and c=0.52 nm. The PL spectra measured at different temperatures are dominated by excitonic emission at 380 nm and less intense below band gap emission band centered at 520 nm.     

From Zn microspheres to hollow ZnO microspheres: A simple route to the growth of large scale metallic Zn microspheres and hollow ZnO microspheres

Large scale metallic Zn microspheres and hollow ZnO microspheres are synthesized by thermal evaporation and vapor transport by heating a ZnO/graphite mixture at 1000 °C. Firstly, metallic Zn microspheres are fabricated with diameters in the range of 1–10 μm. The Zn microspheres are then annealed at 600 °C in air, which form hollow semiconducting ZnO microspheres. EDX and XRD spectra reveal that the oxidized material is indeed ZnO. Room temperature photoluminescence spectra of the oxidized material show a sharp peak at 380 nm and a wider broad peak centered at 490 nm. This growth mechanism is discussed and further investigated for other metallic and metal oxide microstructures.     

Structure and properties of the one-dimensional cobalt oxide CaCo2O4

We have studied crystal structure and transport properties of the quasi one-dimensional cobalt oxide CaCo₂O₄. The CaCo₂O₄ phase crystallizes in calcium-ferrite type structure, which consists of a corner- and edge-shared CoO₆ octahedron network including one-dimensional double chains. Large thermoelectric power (S  150 μV/K at 390 K) with metallic temperature dependence of S, moderate resistivity (ρ  2.9 × 10⁻¹ Ω cm at 390 K) with carrier localization at low temperature, and normal thermal conductivity (κ  6.3 W/Km at 390 K) were observed. The phonon mean-free path was calculated from the observed data, as a function of temperature. The long phonon mean-free path (l  24 Å at 300 K) implies that the thermal conductivity could be suppressed by impurity scattering of phonons with partial element substitution.     

Nucleation, growth and morphology of Co thin films on Ag(1 1 0)

Scanning tunneling microscopy (STM) experiments reveal that Co growth on Ag(1 1 0), at coverages of Co < 1 ML and low substrate temperatures (150 K), involves a concomitant insertion of Co into the top Ag layer and exchange of Ag out onto the surface. At 300 K, coverages of Co > 1 ML gives rise to a 3D nanocluster growth on the surface, with the clusters covered by Ag. Depending slightly on coverage, the clusters have a typical diameter of 3 nm and a height of 0.4 nm. Upon annealing to 500 K, major changes are observed in the morphology of the surface. STM and AES show that there is a reduction of the number of Co islands on the surface, partly due to subsurface Co cluster migration and partly due to sintering into larger clusters.     

Quasi-distributed displacement sensor for structural monitoring using a commercial OTDR

A quasi-distributed displacement sensor for structural monitoring using an optical time domain reflectometer is demonstrated. Four displacement sensing heads are placed along a standard single mode optical fibre in several locations with different intervals. Their configurations introduce power loss through the decrease of their fibre loop radius when displacement is applied. The decrease of the light intensity with displacement variation is reported. Losses of 9 dB for a 120 mm displacement with a sensitivity of 0.027 dB/mm are reported. The quasi-distributed configuration is able to address sensors with 1 m distance resolution between them.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

The electrodeposition of copper onto UHV-prepared GaAs(0 0 1) surfaces

Synchrotron surface X-ray diffraction has been used to investigate in situ the morphology and epitaxy of monolayer amounts of copper electrodeposited from aqueous electrolyte onto ultra-high vacuum prepared, smooth, Ga- or As-terminated GaAs(0 0 1) surfaces. The fcc lattice of the epitaxial Cu islands is rotated by 5° and tilted by about 9° with respect to the GaAs substrate lattice, leading to eight symmetry equivalent domains of Cu islands terminated by {1 1 1} facets.     

Neutron polarization analysis on the multiferroic TbMn2O5

Polycrystalline TbMn₂O₅ was prepared by the standard solid-state reaction method and characterized by powder X-ray diffraction and magnetization to assure it is of single phase. Heat capacity measurements on the compound reveal an antiferromagnetic phase transition at 45 K. A broad peak below 6 K in the heat capacity measurements corresponds to the crossover transition of Tb³⁺ ordering. To confirm these magnetic orderings, neutron powder diffractions on TbMn₂O₅ with XYZ neutron polarization analysis were performed at the diffuse neutron scattering (DNS) spectrometer, FRJ-II, by using neutron wavelength of 4.8 Å in the temperature range of 1.8–250 K. Magnetic scattering was separated from nuclear coherent and spin incoherent scattering contributions. Long-range ordered magnetic peaks were observed below 39 K which is consistent with the heat capacity results. The drastic increasing intensities below 6 K indicate the ferromagnetic transition in Tb³⁺ orderings.     

Optical properties of ZnO nanorods realised by aqueous chemical growth

Photoluminescence investigations of ZnO nanorods realised by an advanced two-step aqueous chemical growth process have been carried out revealing well-resolved near-band-edge emission accompanied by phonon replicas. The optical properties of nanorods with different lengths and diameters are quite similar indicating a good control of the growth process without influencing the optical properties even on plastic substrate. The near-band-edge emission has a very broad line-width of 10 meV. Annealing in Ar atmosphere reduces the deep-level emission with a corresponding increase of the near-band-edge emission.     

Arsenic-related recombination in MOVPE-grown ZnO/GaAs films

In this paper, ZnO films grown by metalorganic vapour phase epitaxy on various substrates (GaAs, silicon, sapphire) and using different VI /II ratios, are investigated by photoluminescence (PL) spectroscopy. The PL spectra of layers grown on GaAs show significant recombination at 3.320 eV, 3.305 eV and 3.270 eV. These energies are remarkably similar to what have been reported for hybrid beam deposited ZnO:As [Y.R. Ryu, T.S. Lee, H.W. White, Appl. Phys. Lett. 83 (2003) 87] and arsenic-implanted ZnO crystals [T.S. Jeong, M.S. Han, C.J. Youn, Y.S. Park, J. Appl. Phys. 96 (2004) 175], and the lines are ascribed to the incorporation of arsenic, which diffuses from the substrate into the films. Two acceptor levels are deduced at 120 meV and at 140–150 meV.     

Spectroscopic investigation of arsenate and selenate incorporation into hydroxylapatite

The mechanism(s) of arsenate and selenate incorporation into hydroxylapatite (HAP) using extended X-ray absorption fine structure (EXAFS) spectroscopy was investigated for As- and Se-doped HAP samples with concentrations between 200 and 2500 ppm. EXAFS data on As and Se K-edges have shown similar local coordination environments and are similar to that of P in HAP, suggesting the substitution of arsenate or selenate tetrahedra on the phosphate sites. EXAFS best-fitting for As-doped samples shows that the first shell is fitted with approximately 4 O atoms at 1.68 Å, showing As(V) in tetrahedral coordination, and Se K-edge EXAFS data are characterized by the backscattering contributions an oxygen shell at 1.2 Å in the Fourier transform, which can be fit with 4 O atoms at 1.65 ± 0.01 Å. This is characteristic of Se–O distances in SeO₄ tetrahedron. These findings suggest that arsenate and selenate substitute for phosphate groups with local distortions during the incorporation of these metals into the structure of HAP.     

Photonic generation of microwave signal using a dual-wavelength single-longitudinal-mode distributed Bragg reflector fiber laser

In this paper, a novel all-optical microwave generation technique based on a dual-wavelength single-longitudinal-mode (SLM) distributed Bragg reflector (DBR) fiber laser is proposed and demonstrated. By exploiting spatial hole burning (SHB) effect, this laser could provide stable dual-wavelength SLM operation with a wavelength separation of 0.088 nm corresponding to the microwave signal at 10.484 GHz with a 3 dB bandwidth of 28 kHz. By appropriately adjusting the pump power, dual-wavelength oscillation could be maintained at different temperatures. We have theoretically analyzed the mechanism for microwave generation of the proposed DBR laser, and the calculated microwave frequency is in good agreement with our experimental results. Furthermore, experimental observation shows both of the laser wavelengths and generated microwave signals have good stability at room temperature.     

Carbon nanotube–polymer composites for photonic devices

We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at 1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving 700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.     

Generation of laser-polarized xenon using fiber-coupled laser-diode arrays narrowed with integrated volume holographic gratings

Volume holographic gratings (VHGs) can be exploited to narrow the spectral output of high-power laser-diode arrays (LDAs) by nearly an order of magnitude, permitting more efficient generation of laser-polarized noble gases for various applications. A 3-fold improvement in ¹²⁹Xe nuclear spin polarization, P_Xe, (compared to a conventional LDA) was achieved with the VHG-LDA’s center wavelength tuned to a wing of the Rb D₁ line. Additionally, an anomalous dependence of P_Xe on the xenon density within the OP cell is reported—including high P_Xe values (>10%) at high xenon partial pressures (1000 torr).     

Photoluminescence of ZnO nanostructures grown by the aqueous chemical growth technique

Zinc oxide nanostructured films were grown by the aqueous chemical growth technique using equimolar aqueous solutions of zinc nitrate and hexamethylenetetramine as precursors. Silicon(100) and glass substrates were placed in Pyrex glass bottles with polypropylene autoclavable screw caps containing the precursors described above, and heated at 95 C for several hours. X-ray diffraction 2θ/θ scans showed that the only crystallographic phase present was the hexagonal wurtzite structure. Scanning electron microscopy showed the formation of flowerlike ZnO nanostructures, consisting of hexagonal nanorods with a diameter of a few hundred nanometers. The photoluminescence spectra of the ZnO nanostructures were recorded at 18–295 K using a cw He–Cd laser (325 nm) and a pulsed laser (266 nm). The ZnO nanostructures exhibit an ultraviolet emission band centered at 3.192 eV in the vicinity of the band edge, which is attributed to the well-known excitonic transition in ZnO.     

Compact 120 TW Ti:sapphire laser system with a high gain final amplifier

A 120 TW/36 fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG—Nd:glass laser was designed and optimized. With 24 J/8 ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of 20 was achieved. The focused intensity of compressed beam could reach to 10²⁰ W/cm² with the M² of 2.0.     

Superconductivity as a Kosterlitz–Thouless transition in the two-dimensional Hubbard model

We investigate a superconducting Kosterlitz–Thouless transition in the two-dimensional (2D) Hubbard model using auxiliary quantum Monte Carlo method for the ground state. The pair susceptibility is computed for both the attractive and repulsive Hubbard model. The numerical results show that the s-wave pair susceptibility scales as χ  L² for the attractive case, in agreement with previous quantum Monte Carlo studies. The scaling χ  L² also holds for the d-wave pair susceptibility for the repulsive Hubbard model if we adjust the band parameter t′.     

What can we learn about the spectrum of high-energy stray neutron fields from Bonner sphere measurements?

Extended-Range Bonner sphere spectrometers (ERBSSs) are well suited for measurements in high-energy stray neutron fields, where neutron energies extend from thermal to a few hundred MeV. These fields typically have a thermal peak, a fairly flat intermediate region, a medium energy peak at 1 MeV and a high-energy peak at a few 100 MeV. The data analysis is not straightforward: it requires unfolding with response functions that have a substantial amount of overlap, and the responses of the modified spheres (which provide information about the fluence at high energies) increase dramatically above 100 MeV. In this paper, I try to determine which of the main features of the spectrum are well determined by the data given optimal methods of analysis, and which features are subject to ambiguity. To do this, I analyse ERBSS measurements using two methods of analysis that are particularly useful for this purpose, Bayesian parameter estimation and maximum entropy unfolding.     

Laser scribing of polycrystalline thin films

We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe₂ (CIGS), ZnO, SnO₂, Mo, Al, and Au. The lasers included four different neodymium–yttrium–aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from 0.1 to 250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.