Luminescent properties of red-emitting LiSr4B3O(9−3x/2)Nx:Eu2+ phosphor for white-LEDs

An Eu²⁺-activated oxynitride LiSr_(4?y)B₃O_(9?3x/2)N_x:yEu²⁺ red-emitting phosphor was synthesized by solid-state reactions. The synthesized phosphor crystallized in a cubic system with space group Ia–3d. The LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphors exhibited a broad red emission band with a peak at 610 nm and a full width at half maximum of 106 nm under 410 nm excitation, which is ascribed to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. The optimal doped nitrogen concentration was observed to be x=0.75. The average decay times of two different emission centers were estimated to be 568 and 489 ns in the LiSr_3.99B₃O_8.25N_0.5:0.01Eu²⁺ phosphors, respectively. Concentration quenching of Eu²⁺ ions occurred at y=0.07, and the critical distance was determined as 17.86 Å. The non-radiative transitions via dipole–dipole interactions resulted in the concentration quenching of Eu²⁺-site emission centers in the LiSr₄B₃O₉ host. These results indicate LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphor is promising for application in white near-UV LEDs.     

Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes

The red-emitting phosphor In₂(MoO₄)₃:Eu³⁺ with cubic crystal structure was synthesized by a conventional solid-state reaction technique and its photoluminescence properties were investigated. The prepared phosphor can be efficiently excited by ultraviolet (395 nm) and blue (466 nm) light. The emission spectra of the phosphor manifest intensive red-emitting lines at 612 nm due to the electric dipole ⁵D₀→⁷F₂ transitions of Eu³⁺. The chromaticity coordinates of x=0.63, y=0.35 (λ_ex=395 nm) and x=0.60, y=0.38 (λ_ex=466 nm) are close to the standard of National Television Standard Committee values (NTSC) values. The concentration quenching of In₂(MoO₄)₃:Eu³⁺ is 40 mol% and the concentration self-quenching mechanism under 466 nm excitation was the dd intereaction. As a result of the strong emission intensity and good excitation, the phosphor In₂(MoO₄)₃:Eu³⁺ is regarded as a promising red-emitting conversion material for white LEDs.     

Optical properties,luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ～0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu³⁺ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu³⁺ ion transition (⁵D₀ → ⁷F₂) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu³⁺ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu³⁺ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu³⁺ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr–GaN:Eu³⁺ composite. Fairly good radiation damage resistance was obtained for 1.7 × 10¹² to 5 × 10¹³ cm^?2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.     

Dual color emitting Eu doped strontium orthosilicate phosphors synthesized by bio-template assisted ultrasound for solid state lightning and display applications

A novel Sr₂SiO₄:Eu (1–5 mol %) superstructures (SS) were synthesized using bio-sacrificial A.V. gel assisted ultrasound method. Powder X-ray diffraction patterns confirmed the presence of both α and β phase formation. It was evident that the morphological growth was highly reliant on A.V. gel concentration, sonication time, pH and sonication power. The formation mechanisms for different hierarchical SS were proposed. From diffuse reflectance spectra, the energy band gap was estimated and found to be ∼4.70–5.11 eV. The photoluminescence emission spectra for the excitation at 392 nm, shows characteristic emission peaks at 593, 613, 654 and 702 nm which were attributed to ⁵D₀ → ⁷F₀, ⁷F_1, ⁷F₂ and ⁷F₃ transitions of Eu³⁺ ions respectively. Conversely, when the samples were subjected to the heat treatment at 850 °C for 3 h under argon atmosphere, display an intense broad emission peak with two de-convoluted peaks at 490 and 550 nm due to 4f⁶5d¹→4f¹ (⁸S_7/2) transitions of Eu²⁺ ions. The concentration quenching phenomenon was discussed which attributes to energy transfer, electron–phonon coupling and ion–ion interaction. The Judd–Ofelt intensity parameters and other radiative properties were estimated by using emission spectra. The CIE chromaticity coordinate values of Sr₂SiO₄:Eu²⁺ and Eu³⁺ nanophosphors were located in green and red regions respectively. The calculated CCT and CRI values specify that the present phosphor can be fairly useful for both green and red components of white LED’s. Luminescence decay and quantum yield suggest the suitability of this phosphor as an efficient luminescent medium for light emitting diodes. Overall, the results elucidated a rapid, environmentally benign, cost-effective and convenient method for Sr₂SiO₄:Eu³⁺ synthesis and for the possible applications such as solid state lighting and display devices.     

Concentration quenching of Eu2+ in a thermal-stable yellow phosphor Ca2BO3Cl:Eu2+ for LED application

A piece-shaped phosphor Ca₂BO₃Cl: Eu²⁺ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T_1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.     

Fluorescent properties of a green- to red-emitting Eu3+, Tb3+ codoped amorphous calcium silicate phosphor

A Eu³⁺, Tb³⁺ codoped amorphous calcium silicate phosphor was prepared by heating a Eu³⁺, Tb³⁺ codoped calcium silicate hydrate phosphor formed by liquid-phase reaction for 30 min at 900 °C. The excitation peak wavelength of the resulting phosphor was 379 nm and the emission peak wavelengths were at 542 nm, attributed to the ⁵D₄→⁷F₅ transition of Tb³⁺, and at 613 mm, attributed to the ⁵D₀→⁷F₁ transition of Eu³⁺. The intensity ratio of the two peaks could be freely controlled by varying the Eu/Tb atomic ratio of the Eu³⁺, Tb³⁺ codoped amorphous calcium silicate phosphor, allowing light to be emitted over a wide range from green to red. It was clarified that electron transfer from Tb³⁺ to Eu³⁺ is occurring.     

Luminescent properties and energy transfer of double-emitting NaSrPO4:Eu2+,Tb3+ phosphor for near-UV white LEDs

Novel blue/green NaSrPO₄ phosphors co-doped with Eu²⁺ and Tb³⁺ were synthesized by a conventional solid-state reaction. Their luminescent properties were characterized by using powder X-ray diffraction, photoluminescence excitation and emission spectra, lifetime, and temperature dependent emission spectra, respectively. The NaSrPO₄:Eu²⁺,Tb³⁺,Na⁺ phosphor showed an intense broad excitation band between 250 and 430 nm, which was in agreement with the near-UV chip (350–420 nm), and it exhibited two dominating emission bands at 445 and 545 nm, corresponding to the allowed 4f⁶5d¹→4f⁷(⁸S_7/2) transition of Eu²⁺ ion and the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, respectively. The emission intensity and lifetime of Eu²⁺ ion decreased with the increasing concentration of Tb³⁺ ion, which strongly indicated that an effective energy transfer occurred from Eu²⁺ to Tb³⁺ in NaSrPO₄ host. The principle of the energy transfer should be the combined effect of the non-radiative resonant energy transfer and the phonon-assisted non-radiative process.     

Synthesis and luminescence properties of green phosphors Ca6Sr4(Si2O7)3Cl2:Eu2+ for white light emitting diodes

Divalent europium-activated chlorosilicate Ca₆Sr₄(Si₂O₇)₃Cl₂:Eu²⁺ phosphors were synthesized by a conventional solid-state reaction under reductive atmosphere. These phosphors can be efficiently excited by UV–visible light from 320 to 420 nm, which matches that of a near UV-emitting InGaN chip. Under the 360 nm excitation, Ca₆Sr_3.97(Si₂O₇)₃Cl₂:0.03Eu²⁺ phosphor shows a strong and broad emission centering at 515 nm, which is attributed to the 5d→4f transition of Eu²⁺ ion. The mechanism of concentration quenching was determined to be the dipole–dipole interaction and the critical energy-transfer distance of Eu²⁺ was calculated as 3.31 nm. The CIE chromaticity coordinates of Ca₆Sr_3.96(Si₂O₇)₃Cl₂:0.03Eu²⁺ phosphor are (0.127, 0.770) according to the emission spectrum. It can be expected that Ca₆Sr₄(Si₂O₇)₃Cl₂:Eu²⁺ phosphor is a promising candidate as the green component for near-ultraviolet InGaN-based white LED.     

Novel red phosphor of double perovskite compound La2MgTiO6:xEu3+

A novel red phosphor La₂MgTiO₆:xEu³⁺ was successfully synthesized by the conventional solid state method. Excited by ultraviolet (395 nm) and blue (465 nm) light, La₂MgTiO₆:xEu³⁺ exhibits intense red emission. Due to the lack of inversion symmetry at the doping sites, the dominant emission peak is from the transition ⁵D₀→⁷F₂. Non-radiative transitions were demonstrated to be from dipole–dipole interactions and the critical distance was estimated to be ～9.19 Å. When Eu³⁺ ions' concentration reaches 15%, the emission intensity is about three times higher than that of the conventional phosphor Y₂O₃:Eu³⁺. The Commission International de L'Eclairage chromaticity coordinate was calculated to be x=0.657 and y=0.343. All the results indicate that La₂MgTiO₆:xEu³⁺ has superior luminescence properties.     

Effect of Sr2+-doping on structure and luminescence properties of BaAl2Si2O8:Eu2+ phosphors

Sr²⁺ doped BaAl₂Si₂O₈:Eu²⁺ phosphor was synthesized by chemical co-precipitation method. With the increase of Sr²⁺ concentration, the phase structure of (Ba_0.965 ? xSr_xEu_0.035)Al₂Si₂O₈ changes from hexagonal phase to monoclinic phase owing to large activation energy in SrAl₂Si₂O₈ system. (Ba_0.965 ? xSr_xEu_0.035)Al₂Si₂O₈ phosphor exhibits a broad blue band peaking at 425 nm due to the 4f⁶5d–4f⁷(⁸S_7/2) transition of Eu²⁺ ions. The emission intensity increases, accompanied by the blue shift of emission maximum from 459 to 417 nm with the Sr²⁺ doping concentration increasing. The optimal concentration of Sr²⁺ ion is 40%, and the phosphor shows high color stability in CIE chromaticity diagram. The result indicates that Sr²⁺ doped phosphor not only can enhance the relative intensity but also can adjust the chromaticity coordinate.     

Photoluminescence properties of Eu2+–Mn2+ codoped Ca-α-SiAlON phosphors

Eu²⁺–Mn²⁺ codoped Ca-α-SiAlON phosphors, Ca_0.736?ySi_9.6Al_2.4O_0.8N_15.2:0.064 Eu²⁺, yMn²⁺, were firstly synthesized by the high temperature solid state reaction method. The effects of doped Eu²⁺ and Eu²⁺–Mn²⁺ concentrations on the photoluminescence properties of the as-prepared phosphors were investigated systematically. Powder X-ray diffraction shows that pure Ca-α-SiAlON phase is synthesized after sintering at 1700 °C for 2 h under 0.5 MPa N₂ atmosphere. The excitation spectra of Eu²⁺-doped Ca-α-SiAlON phosphors are characterized by two dominant bands centered at 286 nm and 395 nm, respectively. The photoluminescent spectrum of Eu²⁺-doped Ca-α-SiAlON phosphor exhibits an intense emission band centered at 580 nm due to the allowed 4f ⁶5d→4f ⁷ transition of Eu²⁺, showing that the phosphor is a good candidate for creating white light when coupled to a blue LED chip. The intensities of both excitation and emission spectra monotonously decrease with the increment of codoped Mn²⁺ content (i.e. y value), indicating that energy transfer between Eu²⁺ and Mn²⁺ is inefficient in the case of Eu²⁺–Mn²⁺ codoped Ca-α-SiAlON phosphors.     

Phase dependent photoluminescence and energy transfer in Ca2P2O7: Eu2+, Mn2+ phosphors for white LEDs

α- and β-Ca₂P₂O₇: Eu²⁺, Mn²⁺ phosphors were prepared by solid-state reaction. Phase transition from tetragonal (β-phase) to monoclinic (α-phase) is performed. A strong orange emission of Mn²⁺ is observed in both α-and β-Ca₂P₂O₇: Eu²⁺, Mn²⁺ upon near ultraviolet (UV) excitation through energy transfer from Eu²⁺ to Mn²⁺. The transfer efficiencies for various Mn²⁺ concentrations are estimated based on lifetime measurements of the fluorescence of Eu²⁺ in the two phases. The photoluminescence excitation spectra of α-Ca₂P₂O₇: Eu²⁺, Mn²⁺ can cover 400 nm of the near-UV range, denoting its potential use as a phosphor with intense orange component for white light emitting diodes (LEDs).     

Development of zeolite-derived novel aluminosilicate phosphors

In this research, zeolite-derived aluminosilicate phosphors were synthesized through the ion exchange route. Red light-emitting property of Eu³⁺-doped aluminosilicate phosphors were discussed from a view point of the Eu content, heat-treatment condition and the oxidation state of Eu ions. The crystalline phase of the host aluminosilicates could be successfully controlled as designed based on the published NaAlO₂–SiO₂ binary phase diagram. Orange-red emission peaks derived from the ⁵D₀→⁷F_j (j=0, 1, 2, 3, 4) transition of Eu³⁺ were observed around 590–700 nm, and 4f⁶5d→4f⁷ transition of Eu²⁺ was observed at around 400–500 nm. The relative intensity I(⁵D₀→⁷F₂) of the dominant emission peak at 612 nm increased consistently with the Eu content. The results of the XANES spectroscopy analysis revealed that Eu²⁺ ion in the 1400 °C as heat-treated host aluminosilicate were successfully converted to Eu³⁺ by the additional annealing at 1100 °C. The Eu contents and heat-treatment conditions were determined to exhibit the best performance as a red phosphor, which were 10 wt% and 1500 °C, respectively     

Spectral structure of barium–phosphate–silicate phosphor Ba10(PO4)4(SiO4)2:EuM+

The new apatite–silicate phosphor doped with Eu ions in Ba₁₀(PO₄)₄(SiO₄)₂ matrix was synthesized through solid-state reaction. It was found that the as-synthesized phosphor displayed apparent mixture of band and line emission peaks giving rise to pseudo white light. The narrow emission bands peaking at 410 nm can be assigned to the 4f⁶5d→4f⁷(⁸S_7/2) transition of Eu²⁺ ions, and the other band at 507 nm is ascribed to anomalous fluorescent emission. One group of line emission peaking at 595 nm and 613 m were due to the ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ions. The occurrence of photostimulated luminescence and discrete emission lines in violet (410 nm), green (507 nm) and red (595 nm and 613 nm) colors indicate that this material has potential application in fields of white-light-emitting.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

Synthesis,characterization and studies of radiative properties on Eu3+-doped ZnAl2O4

Eu³⁺-doped ZnAl₂O₄ phosphors were successfully synthesized in air atmosphere at 900 °C. The phosphors were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), thermally stimulated luminescence (TSL) and photoluminescence (PL) techniques. The average particle size of the system as determined from SEM was found to be 100–150 nm (for samples annealed at 900 °C). PL spectra of the doped phosphors showed emission peaks corresponding to Eu³⁺ ions. Lifetime studies revealed Eu³⁺ ions to be in two different sites. The asymmetric ratio (I₆₁₆/I₅₉₂) was observed to be about 3.75. This suggested that Eu³⁺ ion entered the host mainly substituting Al³⁺ site distorting the local environment and is partly located on surface of the phosphors. A prominent glow peak at 430 K was observed in the TSL of γ-irradiated Eu³⁺-doped ZnAl₂O₄ phosphors. Trap parameters for this peak have been determined and the probable mechanism for the glow peak is proposed. CIE chromaticity coordinates for the system were evaluated. It was observed that, the system could be employed as a potential red emitting phosphor. Commercial utility of the phosphor was investigated by comparing it with commercial red phosphor. The PL intensity of the as prepared phosphors was 63% of that of the commercial phosphor. Apart from this, various radiative properties such as the Judd–Ofelt intensity parameters, spontaneous emission probabilities, luminescence branching ratios, radiative lifetimes and quantum efficiency were evaluated for the system.     

The influence of Eu3+ doping on photoluminescent properties of red emitting phosphor YInGe2O7:Eu3+ by microwave assisted and conventional sintering method

This paper describes an investigation of the crystalline morphology and photoluminescent properties of YInGe₂O₇ powders doped with different Eu³⁺ concentrations using microwave assisted sintering and conventional sintering. X-ray powder diffraction analysis confirmed the formation of monoclinic YInGe₂O₇ structure as YInGe₂O₇:Eu³⁺ powders were sintered at 1200 °C in microwave furnace for 1 h, and the raw material phase of Y₂O₃ was observed when Eu³⁺ concentration was below 30 mol%. Scanning electron microscopy showed microwave assisted sintering results in smaller particle size and more uniform grain size distribution. In the photoluminescent (PL) studies, the concentration quenching effect was observed under the excitation at 393 nm, but not under the excitation at CTS band. The ⁵D₀→⁷F₂ transition (620 nm), exhibits a non-exponential decay behavior as YInGe₂O₇:Eu³⁺ powders were sintered by microwave with the Eu³⁺ concentration higher than 50 mol%.     

White-light generation through Ce3+/Mn2+-codoped and Eu2+-doped Ba1.2Ca0.8SiO4 T-phase phosphors

Hexagonal Ba_1.20Ca_0.8?2x?ySiO₄:xCe³⁺,xLi⁺,yMn²⁺ phosphors exhibit two emission bands peaking near 400 and 600 nm from the allowed f–d transition of Ce³⁺ ions and the forbidden ⁴T₁–⁶A₁ transition of Mn²⁺ ions, respectively. The strong interaction between Ce³⁺/Mn²⁺ ions is investigated in terms of energy transfer, crystal field effect, and microstructure by varying their concentrations. They show a higher quenching temperature of 250 °C than that of a commercially used (Ba,Sr)₂SiO₄:Eu²⁺ phosphor (150 °C). Finally, mixtures of these phosphors with green-emissive Ba_1.20Ca_0.70SiO₄:0.10Eu²⁺ are tested and yielded correlated color temperatures from 3500 to 7000 K, and color rendering indices up to 95%.     

Scintillation kinetics and thermoluminescence of SrI2:Eu2+ single crystals

Single crystal of strontium iodide doped with 1% europium (SrI₂:1% Eu²⁺) was grown by Vertical Gradient Freeze technique. UV excited emission spectra were studied as a function of temperature. Results indicate the thermal quenching of Eu²⁺ emission starts from ～400 K with a thermal activation energy of 0.39 eV. Gamma and UV excited decay measurements indicate that the scintillation decay time of SrI₂:Eu²⁺ is longer than the lifetime of Eu²⁺ luminescence center in the SrI₂ host. The thermoluminescence glow curve revealed a highly concentrated charge carrier trap at 50 K. Elimination of this trap is expected to enhance the energy migration of charge carriers and result in faster scintillation decay.     

Luminescence enhancement by the reduction–oxidation synthesis in monoclinic RE2O3 (RE=Eu,Gd) phosphors containing Eu3+ activator

A novel synthesis was developed for enhanced luminescence in sesquioxide phosphors containing Eu³⁺ activator. It consisted of two annealing steps: reduction under vacuum with gaseous H₂ at 10 Torr and 1300 °C and re-oxidation at 300–1500 °C in air. The integrated luminescence intensity of the monoclinic Eu₂O₃ phosphor was enhanced ca. 21 times by this method compared with conventional processing. The photoluminescence (PL) intensity was maximized at re-oxidation temperatures of 500–1100 °C. The PL characteristics of monoclinic Eu₂O₃ and Gd₂O₃:0.06Eu samples were compared with a commercial cubic Y₂O₃:Eu phosphor. The evolution of physical characteristics during the two-step annealing was studied by Raman spectroscopy, XPS, XRD, PL decay analysis, and SEM. PL decay lifetime increased proportionally to the PL intensity over the range 0.5–100 μs. Additional vibrational modes appeared at 490, 497, and 512 cm^?1 after the two-step annealing. The increase in PL intensity was ascribed to the formation of excess oxygen vacancies and their redistribution during annealing. Resonance crossovers between the charge transfer state and the emitting ⁵D_J states are discussed in relation to reported luminescence saturation mechanisms for oxysulfides Ln₂O₂S:Eu³⁺ (Ln=Y, La).