Luminescence properties of green emission of SiO2/Zn2SiO4:Mn nanocomposite prepared by sol–gel method

Green light emitting Mn²⁺ doped Zn₂SiO₄ particles embedded in SiO₂ host matrix were synthesized by a sol–gel method. After the incorporation of ZnO:Mn nanoparticles in a silica monolith using sol–gel method with supercritical drying of ethyl alcohol in two steps, it was heat treated in air at 1200 °C for 2 h in order to obtain the SiO₂/α-Zn₂SiO₄:Mn nanocomposites. The microstructure of phosphor crystals was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). XRD results indicate that the pure phase α-Zn₂SiO₄ with rhombohedral structure was obtained after thermal treatment at 1200 °C. The SiO₂/α-Zn₂SiO₄:Mn nanocomposites with a Mn doping concentration of 1.5 at% exhibit two broadband emissions in the visible range: a strong green emission at around 525 nm and a second one in the range between 560 and 608 nm. This nanocomposite with a Mn doping concentration of 0.05 shows the highest relative emission intensity. Upon 255 nm excitation, the luminescence decay time of the green emission of Zn₂SiO₄:Mn around 525 nm is 11 ms. The luminescence spectra at 525 nm (⁴T₁–⁶A₁) and lifetime of the excited state of Mn²⁺ ions-doped Zn₂SiO₄ nanocrystals are investigated.     

Sol–gel synthesis and luminescent properties of SiO2/Zn2SiO4 and SiO2/Zn2SiO4:V composite materials

Undoped and vanadium-doped Zn₂SiO₄ particles embedded in silica host matrix were prepared by a simple solid-phase reaction after the incorporation of ZnO and ZnO:V nanoparticles, respectively, in silica monolith using the sol–gel method with supercritical drying of ethyl alcohol in two steps. After supercritical drying and annealing in the temperature range between 1423 and 1473 K in an air atmosphere, the photoluminescence (PL) measurements show a band centered at about 760 nm in the case of non-doped Zn₂SiO₄ which is attributed to energy transfer from Zn₂SiO₄ particles to NBOHs interface defects. In the case of vanadium doped Zn₂SiO₄, the PL reveals a band centered at about 540 nm attributed to the vanadium in the interfaces between Zn₂SiO₄ particles and SiO₂ host matrix. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. The PLE band (～240–350 nm) may be understood as an energy transfer process from O^2? to V⁵⁺ which occurs intrinsically in the vanadyl group.     

Acceptors related to group I elements in ZnO ceramics

ZnO ceramics doped with Li, Na or K were sintered in air for 4 h at 1000 °C. Electrical conductivity as well as photoluminescence (PL), PL excitation and photoconductivity spectra were measured and compared with those in undoped samples. The influence of both fast and slow cooling of the samples from 1000 °C on measured characteristics was investigated. The yellow–orange PL bands associated with the deep acceptors Li_Zn, Na_Zn and K_Zn were observed and the corresponding PL excitation spectra were determined. These acceptors were found to form some complexes with other lattice defects.     

Preparation and photoluminescence properties of the Sr1.56Ba0.4SiO4:0.04Eu2+ phosphor

The Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ phosphors were prepared via a combustion reaction and following the calcination method at low temperature. The influences of the amount of the uncommonly used SrCl₂ flux, different calcination temperatures and time on the structure and the photoluminescence (PL) properties of the phosphors were investigated. Under the excitation of 450 nm blue light, the phosphor shows the intense broad emission band from 490 nm to 650 nm, and the emission peak is centered at 553 nm. The luminescence intensity of Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ was very sensitive to the crystallinity and morphology characteristics of the phosphor. The phosphor calcined at 950 °C for 3 h in 20%H₂/80%Ar atmosphere exhibits improved PL properties due to its high crystallinity and excellent morphology characteristics. The use of the SrCl₂ flux provides a novel way to improve the crystallinity of the silicates phosphors at low preparation temperature.     

White-light emission from annealed ZnO:Si nanocomposite thin films

As grown ZnO:Si nanocomposites of different compositional ratios were fabricated by thermal evaporation techniques. These films were subjected to post-deposition annealing under high vacuum at a temperature of 250 °C for 90 min. The photoluminescence (PL) spectra of annealed samples have shown marked improvements both in terms of intensity and broadening. Structural and Raman analyses show formation of a Zn–Si–O shell around ZnO nanoclusters wherein on heating Zn₂SiO₄ compound forms resulting in huge UV, orange and red peaks at 310, 570 and 640 nm in PL. The new emissions due to Zn₂SiO₄ completes white light spectrum. The study not only suggests that 1:2 ratio is the best suited for material manipulation but also shows process at the interface of ZnO nanoclusters and silicon matrix leads to new PL emissions.     

Effect of heat treatments on the luminescence properties of Zn2SiO4:Mn2+ phosphors prepared by glycothermal methods

Manganese-doped Zn₂SiO₄ phosphors with different crystal structures and morphologies were synthesized by glycothermal reactions of zinc acetate dihydrate and manganese(II) acetate tetrahydrate with tetraethyl orthosilicate in various glycols at 315 °C. The reactions in 1,3-propanediol and 1,4-butanediol yielded α-Zn₂SiO₄:Mn²⁺, whereas the reactions in ethylene glycol and 1,5-pentanediol yielded β-Zn₂SiO₄:Mn²⁺ and ZnO, respectively. The samples obtained in 1,4-butanediol and 1,3-propanediol emitted green light (522 nm), and the sample prepared in 1,4-butanediol showed a higher emission intensity. The photoluminescence intensity of the Zn_1.96Mn_0.04SiO₄ phosphor prepared by a glycothermal reaction in 1,4-butanediol and subsequently calcined at 1100 °C was twice as high as that of the sample synthesized by a conventional solid-state reaction. The high emission efficiency was obtained because the highly homogeneous distribution of Mn²⁺ in the α-Zn₂SiO₄ host synthesized by the glycothermal reaction was maintained during calcination treatment in air.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

Structural and optical properties of Mn-doped ZnO nanocrystalline thin films with the different dopant concentrations

The transparent nanocrystalline thin films of undoped zinc oxide and Mn-doped (Zn_1−xMn_xO) have been deposited on glass substrates via the sol–gel technique using zinc acetate dehydrate and manganese chloride as precursor. The as-deposited films with the different manganese compositions in the range of 2.5–20 at% were pre-heated at 100 °C for 1 h and 200 °C for 2 h, respectively, and then crystallized in air at 560 °C for 2 h. The structural properties and morphologies of the undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/Vis spectroscopy. The analyzed results indicates that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn related phases. Room temperature photoluminescence is observed for the ZnO and Mn-doped ZnO thin films.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

Effect of Fe doping on the structural and gas sensing properties of ZnO porous microspheres

Fe-doped ZnO porous microspheres composed of nanosheets were prepared by a simple hydrothermal method combined with post-annealing, and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), Brunauer–Emmett–Teller N₂ adsorption–desorption measurements and photoluminescence (PL) spectra. In this paper we report Fe doping induced modifications in the structural, photoluminescence and gas sensing behavior of ZnO porous microspheres. Our results show that the crystallite size decreases and specific surface area increases with the increase of Fe doping concentration. The PL spectra indicate that the 4 mol% Fe-doped ZnO has higher ratio of donor (V_O and Zn_i) to acceptor (V_Zn) than undoped ZnO. The 4 mol% Fe-doped ZnO sample shows the highest response value to ppb-level n-butanol at 300 °C, and the detected limit of n-butanol is below 10 ppb. In addition, the 4 mol% Fe -doped ZnO sample exhibits good selectivity to n-butanol. The superior sensing properties of the Fe-doped porous ZnO microspheres are contributed to higher donor defects contents combined with larger specific surface area.     

Growth of SnO2 nanoparticles via thermal evaporation method

Tin oxide (SnO₂) nanoparticles were fabricated by evaporation of Sn powers at 1000 °C in air pressure. The as-deposited SnO₂ particles were single crystal structure, which were mostly spherical shape, the diameter of particles was ranging from 200 to 600 nm. The photoluminescence (PL) spectrum showed that a sharp emission peak at around 393 nm with the excitation wavelength at 325 nm, which suggested possible applications in nanoscaled optoelectronic devices. It was also found that the holding time affects the morphology of the products. The formation mechanism of SnO₂ particles was discussed.     

Synthesis of nanocrystalline ZnO nanobelts via pyrolytic decomposition of zinc acetate nanobelts and their gas sensing behavior

The pyrolytic decomposition of layered basic zinc acetate (LBZA) nanobelts (NBs) into nanocrystalline ZnO NBs is investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). We also report on the gas sensing response of the resulting ZnO nanomaterial to CO. The LBZA NBs are grown at 65 °C in an aqueous solution of zinc acetate dihydrate. AFM and SEM results show as-grown products possess the characteristic layered structure of the LBZA crystals. XRD and XPS results show that annealing as-grown products at 210 °C in air causes a transformation from zinc acetate to nanocrystalline ZnO NBs via thermal decomposition. The ZnO crystalline domain size increases with temperature from 9.2 nm at 200 °C to 94 nm at 1000 °C, as measured from XRD. SEM shows evidence of sintering at 600 °C. The thickness of the NBs, determined via AFM, ranges from 10 to 50 nm and remains approximately constant with annealing temperature. XPS confirmed the chemical transformation from zinc acetate to ZnO and showed a significant remaining zinc hydroxide component for the ZnO NBs consistent with published results. PL measurements at room temperature show a blue shift in peak emission as the nanobelts change from LBZA to ZnO at 200 °C. Above this transition temperature, the ZnO nanobelts possess strong band edge emission at 390 nm and little broad band emission in the visible region. The AFM and SEM images reveal that the crystallites within the nanobelts orientate in rows along the long axis during annealing. This structure provides a high surface area to volume ratio of aligned nanoparticles which is beneficial for gas sensing applications. Gas sensors fabricated from 400 °C annealed nanobelts showed a response of 1.62 when exposed to 200 ppm of CO in dry air at 400 °C, as defined by the ratio of resistance before and during exposure. This indicates that ZnO nanostructures obtained by thermal decomposition of LBZA NBs could provide a cost effective route to high sensitivity gas sensors.     

Photoluminescence characterization of beryllium-implanted 6H–silicon carbide

Beryllium has been implanted into both n- and p-type 6H–SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect D_II-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.     

Optical properties,luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ～0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu³⁺ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu³⁺ ion transition (⁵D₀ → ⁷F₂) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu³⁺ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu³⁺ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu³⁺ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr–GaN:Eu³⁺ composite. Fairly good radiation damage resistance was obtained for 1.7 × 10¹² to 5 × 10¹³ cm^?2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.     

New synthesis of high-quality storage phosphors

We present a single step synthesis method for the photostimulable X-ray storage phosphor BaFBr:Eu²⁺ which results in a highly sensitive powder with a relatively small average grain size of 5.4 μm. The starting chemical reagents are BaCO₃, NH₄F, NH₄Br and EuF₃. The reaction initiated by the decomposition of the ammonium materials leads to highly volatile hydrogen halide gases which react with the BaCO₃ to form BaFBr at temperatures up to 300 °C. Further heating results in the incorporation of Eu²⁺ and the formation of halide vacancies at temperatures in between 390 and 580 °C. The resulting photostimulated luminescence (PSL) efficiency is optimized after sintering at 800 °C. The reaction process is monitored by differential thermal analysis (DTA) and the reaction products are detected by mass-spectroscopy which confirms the proposed chemical reactions. Intermediate and final products are identified using X-ray diffraction. Photoluminescence (PL) and PSL spectra show the incorporation of Eu²⁺ into the lattice, as well as a PL peak at 470 nm which is not present in the PSL spectrum. This peak is shown to originate from O^2? in the lattice and directly affects the PSL sensitivity.     

Photoluminescence properties of Eu2+–Mn2+ codoped Ca-α-SiAlON phosphors

Eu²⁺–Mn²⁺ codoped Ca-α-SiAlON phosphors, Ca_0.736?ySi_9.6Al_2.4O_0.8N_15.2:0.064 Eu²⁺, yMn²⁺, were firstly synthesized by the high temperature solid state reaction method. The effects of doped Eu²⁺ and Eu²⁺–Mn²⁺ concentrations on the photoluminescence properties of the as-prepared phosphors were investigated systematically. Powder X-ray diffraction shows that pure Ca-α-SiAlON phase is synthesized after sintering at 1700 °C for 2 h under 0.5 MPa N₂ atmosphere. The excitation spectra of Eu²⁺-doped Ca-α-SiAlON phosphors are characterized by two dominant bands centered at 286 nm and 395 nm, respectively. The photoluminescent spectrum of Eu²⁺-doped Ca-α-SiAlON phosphor exhibits an intense emission band centered at 580 nm due to the allowed 4f ⁶5d→4f ⁷ transition of Eu²⁺, showing that the phosphor is a good candidate for creating white light when coupled to a blue LED chip. The intensities of both excitation and emission spectra monotonously decrease with the increment of codoped Mn²⁺ content (i.e. y value), indicating that energy transfer between Eu²⁺ and Mn²⁺ is inefficient in the case of Eu²⁺–Mn²⁺ codoped Ca-α-SiAlON phosphors.     

Structure dependent luminescence characterization of green–yellow emitting Sr2SiO4:Eu2+ phosphors for near UV LEDs

This paper reports on the luminescence properties of mixtures of α- and β-(Sr_0.97Eu_0.03)₂SiO₄ phosphors. These phosphors were prepared by 3 different synthesis techniques: a modified sol–gel/Pechini method, a co-precipitation method and a combustion method. The structural and optical properties of these phosphors were compared to those of solid state synthesized powders. The emission spectra consist of a weak broad blue band centered near 460 nm and a strong broad green–yellow band centered between 543 and 573 nm depending on the crystal structure. The green–yellow emission peak blue-shifts as the amount of β phase increases and the photoluminescence emission intensity and quantum efficiency of the mixed phase powders is greater than those of predominant α-phase powders when excited between 370 and 410 nm. Thus, (Sr_1?xEu_x)₂SiO₄ with larger proportion of the β phase are more promising candidates than single α-phase powders for use as a green–yellow emitting phosphor for near UV LED applications. Finally the phosphors prepared by the sol–gel/Pechini method, which have larger amount of β phase, have a higher emission intensity and quantum efficiency than those prepared by co-precipitation or combustion synthesis.     

Luminescence enhancement by the reduction–oxidation synthesis in monoclinic RE2O3 (RE=Eu,Gd) phosphors containing Eu3+ activator

A novel synthesis was developed for enhanced luminescence in sesquioxide phosphors containing Eu³⁺ activator. It consisted of two annealing steps: reduction under vacuum with gaseous H₂ at 10 Torr and 1300 °C and re-oxidation at 300–1500 °C in air. The integrated luminescence intensity of the monoclinic Eu₂O₃ phosphor was enhanced ca. 21 times by this method compared with conventional processing. The photoluminescence (PL) intensity was maximized at re-oxidation temperatures of 500–1100 °C. The PL characteristics of monoclinic Eu₂O₃ and Gd₂O₃:0.06Eu samples were compared with a commercial cubic Y₂O₃:Eu phosphor. The evolution of physical characteristics during the two-step annealing was studied by Raman spectroscopy, XPS, XRD, PL decay analysis, and SEM. PL decay lifetime increased proportionally to the PL intensity over the range 0.5–100 μs. Additional vibrational modes appeared at 490, 497, and 512 cm^?1 after the two-step annealing. The increase in PL intensity was ascribed to the formation of excess oxygen vacancies and their redistribution during annealing. Resonance crossovers between the charge transfer state and the emitting ⁵D_J states are discussed in relation to reported luminescence saturation mechanisms for oxysulfides Ln₂O₂S:Eu³⁺ (Ln=Y, La).     

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition

Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300 K, the samples annealed at 600 °C for 30 min showed clear red-emission lines due to the intra-4f shell transition of ⁵D₀→⁷F_J (J=0–4) in Eu³⁺. In photoluminescence excitation (PLE) spectra, the PL was observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of ⁷F₀–⁵D₃ and ⁷F₀–⁵D₂ transitions in Eu³⁺ (direct excitation). The PL lifetime under the indirect excitation was shorter than that under the direct excitations. These PL properties revealed that the energy transfer from ZnO host to Eu³⁺ was accompanied under indirect excitation.     

Concentration quenching of Eu2+ in a thermal-stable yellow phosphor Ca2BO3Cl:Eu2+ for LED application

A piece-shaped phosphor Ca₂BO₃Cl: Eu²⁺ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T_1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.