p型Se的电沉积及其转化为n型CdSe的机理研究

利用线性电位扫描光伏安法等技术研究钛基体上Se半导体薄膜的电化学形成及转化过程.实验结果表明,在H_2SeO_3溶液中进行电沉积可获得p型Se薄膜,它可在酸性CdSO_4溶液中阴极转化为n型CdSe.讨论了Se的电沉积动力学及其转化为CdSe的可能机理.所述原理可望用于p-n异质结的电化学制备.     

CdS和CdSe薄膜的制备及其光电化学性质

本文采用简易的化学水浴沉积法和自牺牲模板法制备CdS、CdSe薄膜,对两种薄膜进行了XRD表征,比较了两种薄膜的紫外吸收光谱并研究了CdS、CdSe薄膜作为太阳能电池中的光阳极时所产生的光电流和光电压,对两种薄膜的电化学性能进行了比较.     

电沉积法制备固态染料敏化太阳能电池

本文采用一步电化学沉积的方法在导电玻璃上先后沉积了ZnO/染料复合薄膜以及CuSCN薄层,实现仅以电沉积法制备结构为ZnO/染料/CuSCN的固态染料敏化太阳能电池,电池的光电转换效率达到0.1%.在电沉积CuSCN前,脱附电沉积制备的ZnO/染料复合薄膜中的染料以形成多孔ZnO薄膜,然后通过染料再吸附得到染料敏化ZnO纳晶多孔薄膜.在电沉积过程中,ZnO和CuSCN的晶体尺寸、晶体取向和膜层形貌都可以进行比较精准的控制.探讨了影响沉积薄膜形貌和光电转换效率的因素,如旋转圆盘电极的旋转速度、电沉积温度以及染料敏化剂的选择.本文报道的低温电沉积制备全固态太阳能电池的方法为制备柔性染料敏化太阳能电池提供了一种新的思路.     

离子液体中电沉积半导体材料的研究

离子液体具有稳定性高、溶解性好和电化学宽窗口等优点,是理想的电解液。在离子液体中,可以得到在水溶液或其他有机电解液无法沉积的半导体材料,并且离子液体电沉积方法简便灵活,可以控制半导体材料的形貌和尺寸,在制备纳米半导体的领域中具有非常重要的现实意义。本文介绍了离子液体的性能特点,并综述了几种离子液体中电沉积半导体材料。其中包括单质半导体薄膜材料(S、iGe、Te、灰Se等),以及在光电子领域具有广阔应用前景的各种直接带隙的半导体化合物(GaAs、InSb、ZnTe等)。最后,提出离子液体电沉积方法与模板法相结合,制备Si、Ge纳米线,并可以辅助胶体晶体模板法制备光子晶体,为获得完全带隙的光子晶体材料提供了新的技术路线。     

模板法制备CdSe纳米材料及其光电性能

采用电化学沉积法,在阳极氧化铝（AAO）模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、X射线衍射分析（XRD）和能量色散X射线光谱仪（EDS）对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明：通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V（vs SCE）电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%,另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。     

强度调制光电流谱研究纳晶薄膜电极过程

用强度调制光电流谱研究半导体纳晶薄膜电极光生电荷的界面转移和输运动力学过程.从测量不同外加电压和不同硫化钠溶液浓度下CdSe纳晶薄膜电极的光电流响应得到了参数:归一化稳态光电流和表面态寿命,分析界面空穴的直接转移和通过表面态的间接转移过程.通过测量不同背景光强下TiO2纳晶薄膜电极的电子扩散系数研究电子输运过程.应用HCl化学处理方法明显增大了电子扩散系数,改善了电子在TiO2纳晶薄膜电极中的输运性能.     

模板法制备CdSe纳米材料及其光电性能

采用电化学沉积法,在阳极氧化铝（AAO）模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、X射线衍射分析（XRD）和能量色散X射线光谱仪（EDS）对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明：通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V（vs SCE）电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%。另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。     

TiO2多孔薄膜电极的制备、微结构及光电化学性能研究

近年来,半导体纳晶多孔薄膜作为一类重要的纳米结构材料,其光电化学性质及功能特性的研究受到人们广泛关注。由于量子尺寸效应及介电限域效应,它们的光物理、光电化学性质以及电荷传输机理明显异于多晶及单晶体材料。通过简便快捷的涂敷、浸涂或溅射等方法,半导体纳晶多孔薄膜可以在导电衬底上形成。这些薄膜具有高度多孔性、大比表面,易于用有机功能分子或半导体超微粒进行表面修饰^[1-2],在太阳能转换^[2]、光电子器件或电子变色器件^[3]及光催化治理环境污染^[4]等方面具有潜在的应用前景。因此,在光电化学、半导体物理及材料科学领域里研究十分活跃。本文采用涂敷及浸涂提拉方法制备了四种具有不同多孔率及比表面的TiO₂薄膜电极,并对其晶型、表面形貌微结构及光电化学性能进行了研究。     

模板法制备CdSe纳米材料及其光电性能（英文）

采用电化学沉积法,在阳极氧化铝(AAO)模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射分析(XRD)和能量色散X射线光谱仪(EDS)对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明:通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V(vs SCE)电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%。另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。     

沉积电位对电沉积ZnS薄膜的影响

采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V—1.7 V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60 %降低到20 %,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0 V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.     

Studies on the interfacial charge transfer processes of nanocrystalline CdSe thin film electrodes by intensity modulated photocurrent spectroscopy

Interfacial charge transfer kinetics of the nanocrystalline CdSe thin film electrodes have been studied in sodium polysulfide solutions by intensity modulated photocurrent spectroscopy (IMPS). The interfacial direct and indirect charge transfer and recombination processes were analyzed in terms of the parameters: normalized steady state photocurrents and surface state lifetimes obtained by measuring the IMPS responses under different applied potentials and different solution concentrations. IMPS responses of polycrystalline CdSe thin film electrodes were also presented for comparison.     

An sp2 and sp3 hybrid nanocrystalline carbon film electrode for anodic stripping voltammetry and its application for electrochemical immunoassay

A hybridized nanocrystalline carbon film electrode consisting of sp(2) and sp(3) bonds was investigated to reveal the reduction properties of Cd(2+) and for application as a highly sensitive and reliable electrochemical immunoassay. Conductive nanocrystalline carbon film consisting of about 60% sp(2) and 40% sp(3) bonds was fabricated using electron cyclotron resonance (ECR) sputtering equipment, and then the Cd(2+) concentrations were measured with an ECR sputtered carbon (ECR nano-carbon) electrode by employing an anodic stripping voltammetry (ASV) technique. The preconcentrated Cd was analyzed with Kelvin probe force microscopy and energy dispersive X-ray spectroscopy while observing the morphology change with an atomic force microscope and a scanning electron microscope. The preconcentrated Cd on the ECR nano-carbon electrode was revealed to be a thin sheet structure, which was significantly different from the Cd on a conventional carbon material that grows with a coralloid structure. The background current during an ASV measurement maintains a low level equivalent to that found with boron-doped diamond because the surface of the ECR nano-carbon is robust and angstrom-level flat. The carbon-electrode performance for ASV was improved by controlling its structure at a nanometer scale without any metal doping or coating. Finally, the ECR nano-carbon was used for biomolecular determination by electrochemical immunoassay with a CdSe nanoparticle label. Electrochemical immunoassay results were successfully obtained with the ECR nano-carbon, and they correlated well with fluorescence results obtained for CdSe nanoparticles.     

CdSe/泡沫镍薄膜电极对结晶紫的光电催化降解

采用恒电位电沉积法,以泡沫镍为基底电极,制备了CdSe/泡沫镍薄膜电极,采用扫描电子显微镜、紫外可见漫反射光谱和能谱分析表征了CdSe薄膜的形貌及其组成。应用该电极研究结晶紫溶液在光电催化降解过程中的COD去除率。结果表明,以白炽灯(100 W,2只)为光源,采用电沉积30 min所得的CdSe/泡沫镍薄膜电极为工作电极,外加偏压为0.4 V(vs.SCE),0.01 mol/L NaCl为电解质,光电催化降解浓度为0.001 g/L的结晶紫溶液120 min,COD去除率达到84.3%。     

Interfacial passivation mechanism of sulfide towards quantum dot-sensitized nanocrystalline thin films

Journal of Solid State Electrochemistry - We report on the interfacial passivation mechanism in CdSe quantum dot-sensitized ZnO nanocrystalline thin film, where different sulfide semiconductors...     

Chemical surface deposition and growth rate of thin CdSe films

Chemical surface deposition of thin CdSe films was studied. The conditions for preparing thin films were examined, the degrees of Cd conversion in the starting compounds were determined, and the film thicknesses were measured.     

拉氏变换阻抗分析测量CdSe薄膜电极的表面态

在光电化学光能转换的研究中,由于多种因素在半导体/溶液界面形成了各种性质和作用不同的表面态,在界面的电荷和能量转移中起着重要作用,对光电转换性能产生较大的影响。对于多晶半导体——作为具有实用前景和目前深受重视的光电转换材料,由于存在较多的晶格缺陷和晶粒界面,在表面形成了浓度较高的表面态,这些表面态可作为光生电子空穴的复合中心,是造成多晶材料光电转换效率低于单晶材料的主要原因。因此测量和研究半导体/溶液界面的表面态能量分布,性质及作用对研究光电转换过程的机理,特别是对改善多晶半导体的性能都具有直接的重要意义。     

Influence of highly efficient PbS counter electrode on photovoltaic performance of CdSe quantum dots-sensitized solar cells

PbS electrode with high catalytic activity to S_n ^2? reduction certificated by the measurements of electrochemical impedance spectroscopy and cyclic voltammetry was prepared by a simple method. The high catalytic activity makes it be a low-cost alternative counter electrode to platinum (Pt) to be used in quantum dots-sensitized solar cells (QDSSCs) based on polysulfide electrolyte. The photovoltaic performance enhancement of the quantum dots (QDs)-sensitized semiconductor thin films due to the PbS counter electrode was evaluated by fabricating QDSSCs based on CdSe QDs-sensitized ZnO (SnO₂) thin film. CdSe QDs-sensitized ZnO thin film has the lower internal total series resistance and electron transmission time, the higher electron lifetime and electron collection efficiency than the CdSe QDs-sensitized SnO₂ thin film. Replacing the Pt counter electrode with the PbS counter electrode leads to more improvement on the short circuit photocurrent density for QDSSC based on the ZnO thin film than the SnO₂ thin film. Therefore, the process to limit the photovoltaic performance of CdSe QDs-sensitized solar cell and the possible way to improve the photovoltaic performance were analyzed.     

Cadmium selenide microspheres as an electrochemical supercapacitor

This paper reports the synthesis of cadmium selenide electrodes by simple and cost effective chemical bath deposition method for the electrochemical supercapacitors. In order to study the effect of deposition time onto the morphological and electrochemical performance of CdSe electrodes, the reaction time was varied from 2 h to 10 h. As the reaction time goes on increasing the voide-less uniform growth of the thin films with increased size and density of CdSe microspheres is observed from field emission microscopy study. The supercapacitive behavior of the prepared electrodes were analysed with the help of electrochemical impedance, cyclic voltammetry and charge/discharge measurements. The areal capacitance is found to increase from 0.30 mFcm^?2 to 1.285 mFcm^?2 with respect to the deposition time, this indicates the positive effect towards the electrochemical performance.     

脉冲激光沉积纳米NiO薄膜

Na Cl型 Ni O是一种 p型半导体 ,广泛用于传感器、催化剂、涂料、磁性材料及电极材料等领域[1～ 5] .最近 ,Poizot等 [6] 又报道了 Ni O可作为锂离子电池的阳极材料 ,使 Ni O成为又一新的研究热点 .纳米 Ni O粉末的制备方法有多种 ,主要包括化学沉淀法和沉淀转换法 ,Ni O薄膜的制备主要采用磁控溅射、化学气相沉积和电沉积等方法 [7～ 12 ] .脉冲激光沉积法具有操作简单和成膜纯净等优点 ,因此是制备薄膜的重要方法之一 .本文采用脉冲激光沉积 (PLD)法在氧气氛中使用金属镍作为靶材料 ,不锈钢作为基片 ,对 Ni O薄膜的制备进行了研究…