Pyroelectric Properties of Potassium and Rubidium Titanyl—Arsenate Single Crystals in the Temperature Range of 4.2–300 K

The temperature dependences of the pyroelectric coefficients of KTiOAsO₄ and RbTiOAsO₄ single crystals grown by flux crystallization have been investigated in the temperature range of 4.2–300 K. With an increase in temperature, superionic conductivity first arises in KTiOAsO4 (at T > 200 K) and then (at T > 270 K) in RbTiOAsO₄. This conductivity is much higher in the samples polarized at T = 4.2 K. An exponential change in the crystal resistivity along the polar direction is simultaneously observed. The results of measurements in the range of 4.2–200 K indicate larger values of pyroelectric coefficients when compared with potassium and rubidium titanyl-phosphate crystals. A correlation between the pyroelectric coefficients and a change in the lattice constants at isomorphic substitutions of K atoms for Rb and P atoms for As has been revealed within the symmetry approach.     

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be obtained by high-temperature plastic deformation were systematically studied. The deformation regions in which well-shaped Si concave wafers can be obtained were studied for (1 0 0), (1 1 1), and polycrystal Si. It was found that Si (1 1 1) crystal wafers can be more easily deformed to a perfect hemispherical shape than (1 0 0) wafers because of the crystallographic symmetry. Si hemispherical wafers with a small radius of 25 mm can be perfectly deformed when 0.5-mm-thick Si (1 1 1) crystal wafers are used. Ge hemispherical wafers with a radius of 100 mm can be perfectly deformed when 0.5-mm-thick Ge crystal wafers are used. Ge hemispherical concave wafers with a perfect shape can be more easily obtained using Ge (1 1 1) wafers than (1 0 0) wafers. According to these results, the deformation behavior of Ge wafers is very similar to that of Si wafers at a normalized pressing temperature. As both the radius and the load on Si and Ge hemispherical wafers increase, thicker Si and Ge wafers can be used to obtain hemispherical wafers with a perfect shape. The dislocation density in the shaped wafers markedly decreases as the pressing temperature and hemisphere radius increase. Thus, it is suggested that Si and Ge shaped wafers are of sufficient quality and have the high potential for use as several types of lens such as those in Si and Ge X-ray monochromators.     

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system

The formation of Ge nanoislands directly on Si(1 1 1) surface before the completion of a wetting layer was studied by scanning tunneling microscopy and Raman scattering spectroscopy. The mechanism of the wetting layer formation in the Ge/Si(1 1 1) system depends on the rate of Ge deposition. Within the temperature range 350–500 °C, with Ge deposition rates of the order of 10⁻³ bilayers/min, the Ge wetting layer is formed by the multilayer growth mechanism. Therefore, the arrays of Ge islands with the densities of 10⁹–10¹² cm⁻², depending on the rate of Ge deposition, appear directly on the Si surface during the evolution of the wetting layer. The height of Ge islands is limited by 3 bilayers. The lateral dimensions depend on the coverage of Ge and on the growth temperature. A series of lines related to the quantization of the phonon spectrum along the growth direction [1 1 1] was observed in the spectra of Raman scattering by optical phonons of Ge nanoislands.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

Synthesis and physico-chemical characterization of metal free, sodium and potassium phthalocyanine complexes

Sodium phthalocyanine (Na₂Pc), potassium phthalocyanine (K₂Pc) and hydrogen phthalocyanine (H₂Pc) are synthesized in pure state. These complexes are characterized using physico-chemical methods like electronic, IR spectral, magnetic susceptibility measurements, thermogravimetric analysis and X-ray powder diffraction studies. Kinetic and thermodynamic parameters associated with the thermal decomposition were calculated using thermogravimetric analytical data. X-ray diffraction studies revealed that these complexes are having monoclinic crystal lattice structure. Electrical conductivity studies are carried out using two-probe technique in the temperature range 298-473 K for each complex. Sodium phthalocyanine showed semiconducting behavior, whereas potassium phthalocyanine showed first metallic behavior in the temperature range 300-378 K and then semiconducting property in the temperature range 383-473 K. But hydrogen phthalocyanine showed semiconducting behavior in the temperature range 300-390 K and metallic conduction behavior in the temperature range 395-473 K.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Structural changes between soda-lime silicate glass and melt

Neutron diffraction has been used to study the structure of a glass and melt of composition 75SiO₂-15Na₂O-10CaO. RMC modeling of the neutron and X-ray diffraction data for the glass allowed the determination of the Na and Ca environment. The structure has been investigated at 300K, just below the glass transition at 823 K and in the melt at 1273 K. The short range order does not present important modifications with temperature while significant reorganization appears at the medium range order. These latter changes can be associated with the Si and O pairs and indicate the relaxation of the silicate network. This indicates that the glass formation involved structural rearrangement during cooling.     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Occurrence of Kondo-like behavior in electrical-conductivity of Al70Pd20+xMn10−x (x = 0, 1 and 2) icosahedral quasicrystals

Zero-field and in-field (at 8 T) conductivity vs temperature (σ-T), magneto-resistance (Δρ/ρ), magnetization vs temperature (M-T) and magnetization vs field (M-H) of unannealed Al₇₀Pd₂₀Mn₁₀ and annealed Al₇₀Pd₂₀Mn₁₀, Al₇₀Pd₂₁Mn₉ and Al₇₀Pd₂₂Mn₈ quasicrystalline alloys have been studied in the temperature range of 1.4-300 K. Room temperature resistivity and the low-temperature magneto-resistance show a correlation with the corresponding magnetization. The σ-T for all the studied samples shows a pair of minima and maxima. The σ-T maxima show a correlation with the total magnetization. The analysis shows that σ-T is dominated by weak-localization effects. The minima are arising due to competing inelastic scattering times τ_i (e-ph scattering in the dirty metallic limit, τ_i ∝ T⁻²) and the Kondo-type spin-flip scattering time τ_sf whereas the maxima has been attributed to ‘Kondo-maxima’, occurring due to maxima in the spin-flip rate . The magneto-resistance of these samples shows a changeover from negative to positive where the negative component shows a correlation with the magnetization of the sample. The values of parameters derived from refinement give spin-flip scattering fields, which are found to be correlated with the total sample magnetization.     

Substrate temperature effect on the optical properties of amorphous Sb2S3 thin films

Sb₂S₃ amorphous thin films were prepared by thermal evaporation of corresponding powder on thoroughly cleaned glass substrates held at temperature in the range 300‐473 K. X‐ray diffraction and atomic force microscopy have been used to order to identify the structure and morphology of surface thin films. The optical constants of the deposition films were obtained from the analysis of the experimental recorded transmission data over the wavelength range 400‐1400 nm. An analysis of the absorption coefficient values revealed an optical indirect transition with the estimation of the corresponding band gap values. It was found that the optical band gap energy decrease with substrate temperature from 1.67 eV at 300 K to 1.48 eV at 473K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

Epitaxial GaAs layers have been deposited on polished Ge film grown on exactly (0 0 1) oriented Si substrate by metal-organic chemical vapor deposition (MOCVD) via aspect ratio trapping (ART) method. Double-crystal X-ray diffraction shows that the full-width at half-maximum (FWHM) of the (4 0 0) reflection obtained from 1 μm GaAs is 140 arcsec. Scanning electron microscopy (SEM) of the GaAs layer surface shows that the amount of antiphase domain defects (APD) raised from GaAs/Ge interface using Ge ART on Si is dramatically reduced compared to GaAs layers grown on exact (0 0 1) Ge substrate. Defect reduction and Ge diffusion at vicinal GaAs/Ge interface were investigated via cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectrometry (SIMS). Film morphology and optical properties were evaluated via SEM and room temperature photoluminescence (PL).     

Study of sodium tellurite glass using the thermally stimulated depolarization current technique (TSDC)

In order to have a better understanding of the role of the structure and the defects involved in the polarization processes in an 85TeO₂-15Na₂O mol% glass, we used the thermally stimulated depolarization currents (TSDC technique). The TSDC of the non-irradiated sample presented a strong negative peak of current at the temperature of 340 K, preceded by a relatively weak positive peak at about 300 K, after different d.c. voltages of 1200, 1500 and 2000 V were applied. No response was obtained with 1000 V, but the peak intensity increased considerably for voltages above 1200 V. After γ-irradiation of 25 and 50 KGy doses, a depolarization of the negative peak was observed in the sample submitted to25 KGy, whereas for the sample irradiated with 50 KGy, six TSDC peaks appeared at regular intervals of 5 KGy, in the temperature range of 100 and 300 K.     

Growth of large-sized Ce:Y3Al5O12 (Ce:YAG) scintillation crystal by the temperature gradient technique (TGT)

In this work, Ce:YAG crystal with the size of ?4 in was successfully grown by the TGT method. The optical and scintillation properties of as-grown Ce:YAG crystals were investigated. Three obvious absorption bands at 223, 340 and 460 nm and two weak color-center absorption bands at 296 and 370 nm are observed in as-grown Ce:YAG crystal. Fluorescence with an emission peak at 398 nm is observed due to the color centers, and absorption bands of the color centers can be eliminated by annealing in O₂ or H₂ atmosphere at 1673 K for 24 h. Yellow-green fluorescence centered at 530 nm is found when the crystal was excited at 460 nm and the 530 nm excitation spectrum shows two peaks at 340 and 460 nm. X-ray fluorescence spectrum of as-grown crystal shows three emission peaks at 300, 360 and 530 nm. An average light output of 1360 phe/MeV and a single exponential decay with the decay time constant of 62.97 ns are found in as-grown Ce:YAG crystal.     

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Early efforts to grow GaN layers on germanium substrates by plasma assisted molecular beam epitaxy led to GaN domains, rotated by 8° relative to each other. Increased insight in the growth of GaN on germanium resulted in the suppression of these domain and consequently high quality layers. In this study the interface of these improved layers is investigated with transmission electron microscopy. The GaN layers show high crystal quality and an atomically abrupt interface with the Ge substrate. A thin, single crystalline Ge₃N₄ layer is observed in between the GaN layer and Ge substrate. This Ge₃N₄ layer remains present even at growth temperatures (850 °C) far above the decomposition temperature of Ge₃N₄ in vacuum (600 °C). Triangular voids in the Ge substrate are observed after growth. Reducing the Ga flux at the onset of GaN growth helps to reduce the triangular defect size. This indicates that the formation of voids in the Ge substrate strongly depends on the presence of Ga atoms at the onset of growth. However complete elimination was not achieved. The formation of voids in the germanium substrate leads to diffusion of Ge into the GaN layer. Therefore we examined the diffusion of Ge atoms into the GaN layer and Ga atoms into the Ge substrate. It was found that the diffusion of Ge into the GaN layer and Ga into the Ge substrate can be influenced by the growth temperature but cannot be completely suppressed. Our results suggest that Ga atoms diffuse through small imperfections in the Ge₃N₄ interlayer and locally etch the Ge substrate, leading to the diffusion of Ga and Ge atoms.     

Debye type dielectric relaxation in carbon nano-balls’ and 4-DMAABCA acid doped E7 coded nematic liquid crystal

The electrical properties of carbon nano-balls’ and 4-dimethylaminoazobenzene-2′-carboxylic acid doped dispersed nematic liquid crystal composite were investigated by impedance spectroscopy technique. The conductivity and capacitance were measured in the frequency range 100 kHz-1 MHz and temperature range 300-380 K. The loss peak was observed in the dielectric loss spectra and was identified as nearly-Debye type relaxation. Cole-Cole plots have been used to describe the characteristic changes of electrical properties in mentioned temperature interval. The sample presents monodispersive relaxation behavior with a relaxation time of ∼10⁻⁷ s. The relaxation process is attributed to the dipolar rotation of the long molecular axis and the activation energy is found to be 0.097 eV.     

Characterization of chemosynthetic Al2O3-2SiO2 geopolymers

Pure chemosynthetic Al₂O₃-2SiO₂ geoploymers displaying positive alkali-activated polymerization properties and high compressive strength at room temperature were effectively fabricated utilizing a sol-gel method. The molecular structure of the precursor powder and resulting geopolymers were investigated by X-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analysis. In addition, the mechanical and alkali-activated polymerization properties of these materials were also studied. NMR data revealed that the chemosynthetic powders began to contain 5-coordinated Al atoms when the calcination temperatures exceeded 200 °C. These calcined powders were capable of reacting with sodium silicate solutions at calcination temperatures exceeding 300 °C, which is, however, much lower than the temperature required to convert kaolin to Metakaolin.     

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E₂ (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.     

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

The polycrystalline CdTe films were deposited by the close-spaced vacuum evaporation at the different substrate temperatures (150–550 °C). The X-ray diffraction measurements of structural and substructural properties of these films were carried out to study their phase composition and texture. The films’ parameters such as the coherent scattering domain size, microdeformation level and mean density of dislocations were determined based on the broadening of diffraction peaks. In this case the Hall and three-fold convolution approximations were used. Surface morphology, grain size and growth mechanism of the films were determined by the scanning electron microscopy. The low temperature photoluminescence measurements allowed us to establish the correlation between the point and extended defect structure on the one hand and the growth conditions on the other. As a result, the growth conditions of CdTe polycrystalline films with fairly good crystal and optical quality were determined.     

Structural investigations of tungsten silver phosphate glasses by solid state NMR, vibrational and X-ray absorption near edge spectroscopies

Glasses were prepared in the pseudo-binary system (1 − x)AgPO₃-xWO₃ (0≤ × ≤ 0.6 mol%). The structural evolution of the vitreous network was studied as a function of composition by thermal analysis, Fourier Transform Infrared spectroscopy (FTIR), Raman scattering, high resolution ³¹P solid state NMR and XANES at the W-L₁ absorption edge. For compositions with x ranging from 0 to 0.5 a pronounced increase in the glass transition temperature is observed, suggesting a significant increase in the glass network connectivity. At the same time Raman spectra indicate that tungsten atoms are linked to non-bridging oxygen atoms (W-O- or W=O bonded species) whereas the ³¹P MAS-NMR spectra indicate the successive formation of new P-O-W linkages. The formation of some anionic tungsten sites (if these are revealed by the presence of W-O terminal bonds) implies an increase in the average degree of polymerization of the phosphate network, which is consistent with the compositional evolution of the ³¹P MAS-NMR spectra at low x values. For higher x-values, the Raman spectra indicate the presence of W-O-W linkages. W-L₁ XANES data indicate that at least 90% of tungsten atoms are octahedrally coordinated.