Red,green and infrared three-wavelength lasers generated from LD side-pumped Nd3+:YAG crystal

To obtain 1064 nm/532 nm/660 nm three wavelength lasers operating simultaneously or singly, a novel LD side-pumped Nd³⁺:YAG laser system with acousto-optic Q-switched and nonlinear frequency conversion technologies was investigated. When the three wavelength lasers output singly and the Pumping power was 103 W, 1064 nm laser was 14.5 W and the green and red lasers reached 4.7 W and 1.6 W, respectively, at the repetition rate of 10.5 kHz and 11.5 kHz. When they worked simultaneously, the red, green and infrared lasers were obtained with the output power distribution of 1.0 W at 660 nm, 4.3 W at 532 nm and 10.1 W at 1064 nm, and the instability was less than 2% within 3 h.     

Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry–Perot laser diode

We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry–Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.     

Investigation of Q-switched InP-based 1550 nm semiconductor lasers

High energy picosecond pulse generation from a two contact tapered 5 quantum well (QW) InGaAlAs/InP diode laser (1550 nm) is investigated using a passive Q-switching technique. Single peak pulses with pulse energies as high as 500 pJ and durations of typically hundreds of picoseconds are obtained from the device by applying reverse bias voltages in the range of 0 V to ?18 V to the absorber section of the device. It is also demonstrated that more symmetrical Q-switched pulses are obtained by reducing the duration of electrical pulses applied to the gain section of the laser. Such an improvement is attributed to the reduced time of the population inversion in the gain section due to shorter electrical pulse. We also show comparatively the dependence of optical spectra on the reverse bias voltage for diode lasers emitting at 1550 nm and 1350 nm, and demonstrate that better spectral output is obtained from AlGaInAs lasers emitting at a wavelength of 1550 nm.     

Influence of the ZnO nanoparticle sizes and morphology on the photoinduced light reflectivity

We have established a principal possibility of changes of the light reflectivity at the wavelength of 633 nm (He–Ne laser) under influence of the external laser light. The changes are very sensitive to the wavelength of the photoinduced laser. We have chosen two types of the photoinduced lasers: UV nitrogen 7 ns laser at wavelength 371 nm heating near the absorption edge and the 10 ns 1064 nm Nd:YAG laser with wavelength 1064 nm. The power dependences of the reflectivity were studied. Possible explanation of the observed effects is presented following the conception of the nano-trapping levels. These results have been obtained from two ZnO thin films prepared from principally different deposition parameters leading to different particle features and morphologies.     

A neodymium fluid laser: Laser emission in circulating state

Differing from conventional liquid lasers, a novel concept of fluid laser was provided, which has attractively potential using in high average power lasers. The laser medium was prepared by dispersing Nd³⁺: phosphate glass micro-balls in organic match liquid. Its optical properties were investigated and the radiative transition rate was calculated by Judd–Ofelt theory. The experiment of laser oscillation in static state indicates that the heat exchanging has limited effect on refractive index of the fluid laser medium in a short time. In circulating state, a laser oscillation occurred at 1058.1 nm when pumped by two 808 nm diode lasers. The maximum output energy is 2.58 mJ with the absorbed pumping energy of 460 mJ. This study offers a new way in the exploration of high average power laser.     

Efficient cw violet-light generation in a ring cavity with a periodically poled KTP

In this work, we experimentally demonstrate an efficient cw second harmonic generation (SHG) at 780 nm wavelength with a first-order type-I phase matching periodically poled KTP (PPKTP) crystal in a ring cavity, the wavelength corresponds to the D₂ line of Rb atom transition. The fundamental laser used is a grating-stabilized external cavity diode laser and its frequency is precisely locked to Rb atom transition frequency using the saturated absorption technique. About maximal 6.9 mW UV radiation of 390 nm with a net conversion of 9.5% at an input mode-matched power of 73 mW is generated with one crystal, and about maximal 8.8 mW with the net conversion of 12% is obtained with another crystal; the powers in stable operation are about 1.7 mW and 3.4 mW, respectively. This is, to our best knowledge, the first SHG experiment at 780 nm wavelength with the PPKTP in a ring cavity.     

Integrated wavelength monitoring in a photonic-crystal tunable laser diode

A photonic-crystal tunable 1.55 μm laser diode is fitted with a wavelength monitor on its rear side. The 250-μm long laser based on a coupled-cavity design has approximately 15 nm tunability. The wavelength monitor collects and differentially feeds two-photodetecting areas, thanks to a mode conversion to a higher-order mode (a mini-stopband), followed by tunneling through a thin clad. The layout is numerically optimized to minimize unwanted reflections. Electrical cross-talk was prevented through guard rings and trenches. The correlation between wavelength and the monitor photocurrent ratio demonstrates a 10–20 GHz stabilization capability, or a 15 nm monitoring range.     

Dual-wavelength investigation of laser-induced damage in multilayer mirrors at 532 and 1064 nm

Thin film beam splitters with high reflectivity at 532 nm and high transmittance at 1064 nm were deposited via reactive electron-beam evaporation with optimized parameters. The damage performance of the samples was investigated under irradiations of 532 nm laser only, 1064 nm laser only, and various combined laser fluences. The damages induced by the 1064 nm laser were primarily attributed to the initiators at the interface between the coatings and substrate. Under 532 nm laser irradiation only, two distinctive damage pits initiated by the submicron absorptive defects located at different coating depths and correlated to interfaces were observed. The damage effect under simultaneous irradiation in multilayer films was also investigated. The respective sensitive defects of the two lasers remained the precursors for causing damage. However, the dominant damage factors in simultaneous irradiation changed with the 1064 nm laser fluence, which also determined the coupling effect between the two lasers in terms of causing damage. Finally, correlative analysis methods were used to discuss the different coupling effects.     

Compact sensor for methane detection in the mid infrared region based on Quartz Enhanced Photoacoustic Spectroscopy

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10⁻⁶ cm⁻¹ W/Hz^1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time.     

Continuous-wave 560 nm light generated by intracavity SrWO4 Raman and KTP sum-frequency mixing

An LD end-pumped Nd:YAG/SrWO₄ continuous-wave 560 nm laser is presented based on intracavity sum-frequency mixing of the fundamental and first-Strokes light. The maximum output power of 330 mW at 559.6 nm was obtained for the diode pump power of 13.7 W and the conversion efficiency was about 2.5%. The intense blue emission was also observed in the SrWO₄ crystal when the Raman laser was operating above threshold. This blue emission is centered at 473 nm, which also happened to YVO₄.     

Generation of tunable and narrow linewidth continuous-wave yellow laser by sum–frequency mixing of diode-pumped solid-state Nd:YAG ring lasers

We report a tunable, narrow linewidth and high beam quality continuous-wave (CW) yellow laser system at 589 nm. The system is an all solid-state design employing single-pass sum–frequency generation in a KTP crystal by mixing the 1064 nm with 1319 nm lines of two side-pumped Nd:YAG enforcing unidirectional ring lasers. With this method, a CW yellow laser at 589.159 nm with an output power of 0.8 W, a linewidth less than 1.5 GHz and a beam quality M² = 1.29 is obtained. The wavelength of the laser also can be precisely tuned from 589.112 to 589.181 nm in step-length of about 0.22 pm.     

Synchronous tunable wavelength spacing dual-wavelength SOA fiber ring laser using Fiber Bragg grating pair in a hybrid tuning package

A Dual-Wavelength Semiconductor Optical Amplifier (DW-SOA) based fiber ring laser with synchronous wavelength tunability is proposed and experimentally demonstrated. The SOA gain medium strongly suppresses mode competition, thus allowing stable dual-wavelength laser oscillation. The wavelength spacing of the two lasers can be tuned synchronously using a modified hybrid-tuning package incorporating a pair of Fiber Bragg Gratings (FBGs). The DW-SOA demonstrates a laser output with a wavelength spacing of between 0.10 and 8.30 nm (wavelength shift inequality of 0.08 to 0.75 nm). The relationship between the applied strain and wavelength shift of the two tuning modes is also analyzed.     

Efficient femtosecond Yb:YAG laser pumped by a single-mode laser diode

Single-mode diodes enable a particularly simple, compact and effective pumping of solid-state laser devices for many specialized applications. We investigated a single-mode, 300-mW laser diode for pumping at 935 nm a Yb:YAG laser passively mode-locked by a semiconductor saturable absorber. Relatively short pulse generation (156 fs), tunable across 1033–1059 nm has been demonstrated. An optical-to-optical efficiency of about 28% has been obtained with 320 fs long pulses. Therefore, contrarily to what previously believed, compact diode-pumped ultrafast Yb:YAG oscillators can reliably and efficiently deliver pulses in the range of ≈ 100–200 fs with few tens of mW, which are very appealing for bio-diagnostics and amplifier seeding applications.     

Efficient diode pumped cesium vapor amplifier

An efficient diode laser pumped Cs vapor amplifier has been demonstrated. Using a 2 cm long Cs vapor cell pumped by an 18 W laser diode array, an amplification factor of 145 for low power Cs laser radiation was achieved. Such an amplifier or chain of amplifiers can significantly simplify the use of multiple pump sources for scaling the output power of alkali lasers.     

An energy-efficient tie-type architecture for stable and wavelength-tunable SOA-based fiber laser

A new and energy-efficient tie-type architecture for stable and wavelength-tunable semiconductor optical amplifier (SOA)-based fiber ring laser is proposed and experimentally investigated. Here, the tie-type laser configuration is constructed by two Sagnac fiber loops. The proposed laser also can extend the lasing wavelength to longer wavelength (L-band) even only the C-band SOA is used. The proposed tie-type architecture has >5 dB higher output optical power at bias current of 80 mA when compared with the single ring SOA-based fiber laser. In this measurement, the output power, wavelength tuning range, side-mode suppression ratio (SMSR) and output stability of proposed fiber laser have also been analyzed and discussed.     

Efficient high-power UV laser generated by an optimized flat–flat actively Q-switched laser with extra-cavity harmonic generations

We investigate the parasitic lasing effect in the high-power actively Q-switched laser with a flat–flat resonator. The parasitic lasing effect in the low-Q stage is found to lead to long tails in the output pulses, corresponding to the peak-power reduction. We experimentally determine the shortest cavity length without the parasitic lasing effect to optimize the performance of the high-power actively Q-switched laser with a flat–flat cavity. We further use the optimized fundamental laser to generate green and UV lasers by extra-cavity harmonic generations. At a pump power of 44 W, the output powers at 355 nm and 532 nm as high as 6.65 W and 8.38 W are obtained at a pulse repetition rate of 40 kHz.     

Low-threshold all-fiber 1000 nm supercontinuum source based on highly non-linear fiber

We present an highly efficient all-fiber compact supercontinuum source that exhibits a nearly flat spectrum from 1.1 μm to 2.1 μm. This broadband infrared optical source is made-up of a highly non-linear fiber pumped by a 1.55 μm self-Q-switched Er-Brillouin nanosecond pulsed fiber laser, which in turn is pumped by a low-power 1480 nm laser diode. In this work we highlight the great potential of highly non-linear fiber for supercontinuum generation with respect to conventional dispersion-shifted fiber by demonstrating a significant 10 dB power enhancement in the short wavelength side of the supercontinuum.     

Dual-wavelength narrow-linewidth fiber laser based on F-P fiber ring filter

A dual-wavelength fiber laser with a narrow-linewidth, based on a P-F fiber filter has been proposed. Polarization-maintaining fiber Bragg grating (PM-FBG) and a F-P fiber filter are introduced based on the traditional fiber laser. PM-FBG is used as the wavelength selection device. The fiber F-P filter consists of two optical couplers and a section of un-pumped erbium-doped fiber (EDF). Due to the delay of cavity and the loss generated by the EDF, the filter has comb spectral response. The incorporation of the fiber F-P filter leads to the suppression of undesirable modes. At the room temperature, under 980 nm LD pumped, the maximum output of the two wavelengths is respectively ?2.259 dBm and 0.568 dBm, with the 3-dB bandwidth separately 0.1 nm and 0.14 nm, realizing the narrow linewidth and dual-wavelength output.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Femtosecond single-mode diode-pumped Cr:LiSAF laser mode-locked with single-walled carbon nanotubes

A low threshold Cr:LiSAF laser pumped with an inexpensive single-mode laser diode emitting 120 mW was passively mode-locked with a novel ultrafast saturable absorber mirror based on single-walled carbon nanotubes (SWCNT-SAM). Pulses as short as 122 fs were achieved, tunable across 14 nm. A second pump diode coupled in polarization allowed to shorten the pulse duration to 106 fs, with up to 24-mW output power.